المؤلفون: Behzad Jazizadeh, Maksym Myronov

المصدر: Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)

مصطلحات موضوعية: 3C–SiC, MEMS, CVD, Strain, Heteroepitaxy, Medicine, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2045-2322

URL الوصول: https://doaj.org/article/8bc2af9f0d434125b227d7e4b9cf1cd5

المؤلفون: Trevor R. Smith, Spencer McDermott, Vatsalkumar Patel, Ross Anthony, Manu Hedge, Sophie E. Bierer, Sunzhuoran Wang, Andrew P. Knights, Ryan B. Lewis

المصدر: Advanced Materials Interfaces, Vol 12, Iss 3, Pp n/a-n/a (2025)

مصطلحات موضوعية: defect‐mediated diffusion, GaAs‐on‐Si, heteroepitaxy, MOVPE, solid‐phase epitaxy, Physics, QC1-999, Technology

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2196-7350

URL الوصول: https://doaj.org/article/d63908d72a7b4eb4a37e019621b5626a

المؤلفون: Jian Li, Chen Jiang, Hao Liu, Yang Zhang, Hao Zhai, Xin Wei, Qi Wang, Gang Wu, Chuanchuan Li, Xiaomin Ren

المصدر: Advanced Photonics Research, Vol 5, Iss 7, Pp n/a-n/a (2024)

مصطلحات موضوعية: III–V heteroepitaxy on Si, dislocation filtering, quantum well lasers, reliability, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2699-9293

URL الوصول: https://doaj.org/article/ac4d4a89d57548d1bdc63b6cefe4512e

المؤلفون: Benamra, Yamina, Auvray, Laurent, Andrieux, Jérôme, Cauwet, François, Alegre Salguero, María de la Paz, Lloret, Laurent, Araújo Gay, Daniel, Gutiérrez Peinado, Marina, Ferro, Gabriel

المساهمون: Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica, Didáctica

المصدر: Solid State Phenomena - 2023, Vol. 343 pp. 3-8

مصطلحات موضوعية: 4H-SiC, Boron carbide, Heteroepitaxy, CVD

وصف الملف: application/pdf

Relation: http://hdl.handle.net/10498/32569

الاتاحة: http://hdl.handle.net/10498/32569
https://doi.org/10.4028/P-6T47NZ

المؤلفون: Yujie Yan, Jun Huang, Lei Pan, Biao Meng, Qiangmin Wei, Bing Yang

المصدر: Inorganics, Vol 12, Iss 8, p 207 (2024)

مصطلحات موضوعية: metal–organic chemical vapor deposition, GaN on Si, heteroepitaxy, dislocation annihilation, material characterization, Inorganic chemistry, QD146-197

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2304-6740/12/8/207; https://doaj.org/toc/2304-6740

URL الوصول: https://doaj.org/article/e125d273ffd04c34aebbc764d17b98f3

المؤلفون: Lebedev, Vadim, Engels, Jan, Luo, Tingpeng, Kustermann, Jan, Weippert, Jürgen, Giese, Christian, Kirste, Lutz, Quellmalz, Patricia, Jeske, Jan, Cimalla, Volker, Knittel, Peter

مصطلحات موضوعية: defects, diamond, epitaxial lateral overgrowth, heteroepitaxy, NV, optically detected magnetic resonance, quantum

وصف الملف: application/pdf

Relation: Physica status solidi. A; https://publica.fraunhofer.de/handle/publica/459589; https://doi.org/10.24406/publica-2544

الاتاحة: https://publica.fraunhofer.de/handle/publica/459589
https://doi.org/10.1002/pssa.202300325
https://doi.org/10.24406/publica-2544

المؤلفون: Christoph E. Nebel

المصدر: Functional Diamond, Vol 3, Iss 1 (2023)

مصطلحات موضوعية: cvd diamond, properties, heteroepitaxy, applications, green diamond, deposition energy demand, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2694-1120

URL الوصول: https://doaj.org/article/dbafadcf70914cd9b2147f27961cbb33

المؤلفون: V.A. Lapin, I.V. Kasyanov

المصدر: Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, Iss 14, Pp 168-175 (2022)

مصطلحات موضوعية: heteroepitaxy, inaln, ion-beam deposition, elemental analysis, scanning electron microscopy, heterostructures, Physical and theoretical chemistry, QD450-801

وصف الملف: electronic resource

Relation: https://physchemaspects.ru/2022/doi-10-26456-pcascnn-2022-14-168/?lang=en; https://doaj.org/toc/2226-4442; https://doaj.org/toc/2658-4360

URL الوصول: https://doaj.org/article/24cc54f546a5446d84c15e67f00c69a3

المؤلفون: Weihua Wang, Benjian Liu, Leining Zhang, Jiecai Han, Kang Liu, Bing Dai, Jiaqi Zhu

المصدر: Functional Diamond, Vol 2, Iss 1, Pp 215-235 (2022)

مصطلحات موضوعية: diamond wafer, heteroepitaxy, large size, bias enhanced nucleation, textured growth, electronic applications, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2694-1120

URL الوصول: https://doaj.org/article/04b2207e42e64549a5fa6cccbdc17853

المؤلفون: Ghosh, Saptarsi, Frentrup, Martin, Hinz, Alexander, Pomeroy, James, Field, Daniel, Wallis, David, Kuball, Martin, Oliver, Rachel

مصطلحات موضوعية: AlGaN/GaN HEMTs, GaN-on-Si, Heteroepitaxy, magneto-transport, thermal resistance

وصف الملف: Excel; application/zip

Relation: https://www.repository.cam.ac.uk/handle/1810/378590; https://doi.org/10.17863/CAM.114906

الاتاحة: https://www.repository.cam.ac.uk/handle/1810/378590
https://doi.org/10.17863/CAM.114906

المؤلفون: Jongbeom Kim, Hee-Suk Chung, Kyu Hwan Oh, Heung Nam Han, Taehwan Lim, Hyo-Jong Lee, Jung Han Kim

مصطلحات موضوعية: Biochemistry, Microbiology, Biotechnology, Ecology, Developmental Biology, Science Policy, Environmental Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, show little deformation, semiconductor material due, integrated visualization demonstrated, robust heteroepitaxial growth, porous structure enables, gan crystal growth, free gan heteroepitaxy, porous tin layer, heteroepitaxial growth, tin layer, porous structure, heteroepitaxial structure, gan heteroepitaxy, porous area, buffer layer, gan source, gan infiltration, gan formulated, widely studied, various benefits

Relation: https://figshare.com/articles/journal_contribution/Robust_Heteroepitaxial_Growth_of_GaN_Formulated_on_Porous_TiN_Buffer_Layers/24871584

الاتاحة: https://doi.org/10.1021/acs.cgd.3c00883.s004
https://figshare.com/articles/journal_contribution/Robust_Heteroepitaxial_Growth_of_GaN_Formulated_on_Porous_TiN_Buffer_Layers/24871584

المؤلفون: Cong Zeng, Donghui Fu, Yunjiang Jin, Yu Han

المصدر: Photonics; Volume 10; Issue 5; Pages: 573

مصطلحات موضوعية: Si photonics, III–V photodetector, blanket heteroepitaxy, selective heteroepitaxy

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/photonics10050573

الاتاحة: https://doi.org/10.3390/photonics10050573

المؤلفون: Cauwet, François, Benamra, Yamina, Auvray, Laurent, Andrieux, J., Ferro, Gabriel

المساهمون: Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)

المصدر: Solid State Phenomena ; International conference on silicon carbide and related materials 2023 ; https://hal.science/hal-04726099 ; International conference on silicon carbide and related materials 2023, Sep 2023, Sorrento (Italie), Italy. pp.1-6, ⟨10.4028/p-uFrJ54⟩

مصطلحات موضوعية: Boron carbide, Heteroepitaxy, 4H-SiC, polarity, CVD, [CHIM.MATE]Chemical Sciences/Material chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

جغرافية الموضوع: Sorrento (Italie), Italy

Time: Sorrento (Italie), Italy

Relation: info:eu-repo/semantics/altIdentifier/arxiv/2410.07684; ARXIV: 2410.07684

الاتاحة: https://hal.science/hal-04726099
https://hal.science/hal-04726099v1/document
https://hal.science/hal-04726099v1/file/Cauwet%20et%20al%20corrected.pdf
https://doi.org/10.4028/p-uFrJ54

المؤلفون: Liu Zhetong, Liu Bingyao, Chen Zhaolong, Yang Shenyuan, Liu Zhiqiang, Wei Tongbo, Gao Peng, Liu Zhongfan

المصدر: National Science Open, Vol 2 (2023)

مصطلحات موضوعية: graphene, 2D materials, heteroepitaxy, remote epitaxy, pinhole epitaxy, van der Waals epitaxy, Science, Engineering (General). Civil engineering (General), TA1-2040

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2097-1168

URL الوصول: https://doaj.org/article/8a7eca1c0f814603b67c0aa90e3dee0f

المساهمون: Wang, G. [Rensselaer Polytechnic Inst., Troy, NY (United States). Department of Physics, Applied Physics and Astronomy, and Center for Materials, Devices, and Integrated Systems]

المصدر: Applied Surface Science; 413; C

وصف الملف: Medium: ED; Size: p. 219-232

URL الوصول: http://www.osti.gov/scitech/servlets/purl/1376144

المؤلفون: Vasileiadis Isaak, Scheuer Laura, Karfaridis Dimitrios, Dimitrakopulos George, Papaioannou Evangelos, Kehagias Thomas

المصدر: BIO Web of Conferences, Vol 129, p 22015 (2024)

مصطلحات موضوعية: fe-pt heteroepitaxy, tem-stem-edxs, l1o-ordering, thz-emission, Microbiology, QR1-502, Physiology, QP1-981, Zoology, QL1-991

وصف الملف: electronic resource

Relation: https://www.bio-conferences.org/articles/bioconf/pdf/2024/48/bioconf_emc2024_22015.pdf; https://doaj.org/toc/2117-4458

URL الوصول: https://doaj.org/article/808bab072f3c46839a394b4bdeec0970

المؤلفون: Tung B. T. To, Fábio D. A. Aarão Reis

المصدر: Surfaces, Vol 5, Iss 2, Pp 251-264 (2022)

مصطلحات موضوعية: thin films, heteroepitaxy, temperature, roughness, islands, kinetic Monte Carlo, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2571-9637/5/2/18; https://doaj.org/toc/2571-9637

URL الوصول: https://doaj.org/article/8f0003b935e84b67b755aac600444550

المؤلفون: V.A. Lapin, A.A. Kravtsov, D.S. Kuleshov, F.F. Malyavin

المصدر: Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, Iss 13, Pp 263-271 (2021)

مصطلحات موضوعية: heteroepitaxy, molecular beam epitaxy, misfit dislocations, buffer layer, defect annihilation, Physical and theoretical chemistry, QD450-801

وصف الملف: electronic resource

Relation: https://physchemaspects.ru/2021/doi-10-26456-pcascnn-2021-13-263/?lang=en; https://doaj.org/toc/2226-4442; https://doaj.org/toc/2658-4360

URL الوصول: https://doaj.org/article/307fa57b17ac4d9999b700d09f52b1a5

المؤلفون: Lovergine N., Miccoli I., Tapfer L., Prete P.

المساهمون: Lovergine, N., Miccoli, I., Tapfer, L., Prete, P.

مصطلحات موضوعية: GaAs heteroepitaxy, High resolution X-ray diffraction, Metalorganic vapor phase epitaxy, Mosaicity, Reciprocal space mapping, Rotational twins, Silicon substrate, X-ray polar figures

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:001013836000001; volume:634; firstpage:1; lastpage:9; numberofpages:9; journal:APPLIED SURFACE SCIENCE; https://hdl.handle.net/11587/503007; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85161325369; https://www.sciencedirect.com/science/article/pii/S0169433223013065?via=ihub

الاتاحة: https://hdl.handle.net/11587/503007
https://doi.org/10.1016/j.apsusc.2023.157627
https://www.sciencedirect.com/science/article/pii/S0169433223013065?via=ihub

المؤلفون: Ranger, Nicolas, Constantinescu, Catalin-Daniel, Lucas-Roper, Romain, Boulle, Alexandre, Glandut, Nicolas

المساهمون: Institut de Recherche sur les CERamiques (IRCER), Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut Matériaux Procédés Environnement Ouvrages (IMPEO), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)

المصدر: ISSN: 0040-6090 ; Thin Solid Films ; https://hal.science/hal-04286785 ; Thin Solid Films, 2023, 782, pp.140007. ⟨10.1016/j.tsf.2023.140007⟩.

مصطلحات موضوعية: titanium carbide, laser ablation, thin films, electrochemistry, heteroepitaxy, stoichiometry, [CHIM.MATE]Chemical Sciences/Material chemistry

Relation: hal-04286785; https://hal.science/hal-04286785; https://hal.science/hal-04286785/document; https://hal.science/hal-04286785/file/submitted_article.pdf

الاتاحة: https://hal.science/hal-04286785
https://hal.science/hal-04286785/document
https://hal.science/hal-04286785/file/submitted_article.pdf
https://doi.org/10.1016/j.tsf.2023.140007