المؤلفون: Shin-Ichiro Hayashi, Keiji Wada

المصدر: IEEE Open Journal of Power Electronics, Vol 5, Pp 709-717 (2024)

مصطلحات موضوعية: Condition monitoring, gate drive circuit, gate oxide, long-term reliability, SiC MOSFET, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10520910/; https://doaj.org/toc/2644-1314

URL الوصول: https://doaj.org/article/92b2b972cf7c4562a26e606ad6b3be03

المؤلفون: Hyojin Park, Gyuhyun Kil, Wonju Sung, Junghoon Han, Jungwoo Song, Byoungdeog Choi

المصدر: IEEE Access, Vol 12, Pp 139427-139434 (2024)

مصطلحات موضوعية: ALD, DRAM, dielectric, gate first high-k/metal gate, gate oxide reliability, HKMG, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10680011/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/e56a0bc5646e40389047d36e9136ccd7

المؤلفون: Vakkalakula Bharath Sreenivasulu, M. Prasad, Epuri Deepthi, Aruru Sai Kumar, S. Sudheer Mangalampalli

المصدر: IEEE Access, Vol 12, Pp 144479-144488 (2024)

مصطلحات موضوعية: Junctionless, stacked quad gate, gate oxide stack, RCS architecture, inverters, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10700748/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/7d3851116b084c9b970f63b7f0c1bca7

المؤلفون: Yulim An, Hanbin Lee, Jeonghee Ko, Hyo-In Yang, Gyeongsu Min, Dong Myong Kim, Dae Hwan Kim, Jong-Ho Bae, Min-Ho Kang, Sung-Jin Choi

مصطلحات موضوعية: Biophysics, Biochemistry, Medicine, Sociology, Space Science, Environmental Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, four different configurations, accurate electrical modeling, thinner gate oxide, thicker gate oxide, gate capacitance coupling, effective gate capacitance, purity cnt solution, electrical characteristics measured, capacitive coupling effects, 2 , cnt network transistors, tg oxide materials, network channel, film transistors, accurate evaluation, top gate, bottom gate, cnt thin, cnt materials, cnt density, unexpected effects, temperature process

Relation: https://figshare.com/articles/journal_contribution/Gate_Capacitance_Coupling_of_Double-Gate_Carbon_Nanotube_Network_Transistors/25062442

الاتاحة: https://doi.org/10.1021/acsami.3c14382.s001
https://figshare.com/articles/journal_contribution/Gate_Capacitance_Coupling_of_Double-Gate_Carbon_Nanotube_Network_Transistors/25062442

المؤلفون: Picot-Digoix, Mathis, Le, T-L, Azzopardi, S., Vinnac, Sébastien, Richardeau, Frédéric, Blaquiere, Jean‐marc

المساهمون: Convertisseurs Statiques (LAPLACE-CS), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT), Safran Tech, SAFRAN Group

المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
https://hal.science/hal-04647322
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2024, Bremen, Germany. pp.84-87, ⟨10.1109/ISPSD59661.2024.10579698⟩

مصطلحات موضوعية: SiC MOSFET, health monitoring, gate driver, Gate oxide degradation, Short-Circuit, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Bremen, Germany

Relation: hal-04647322; https://hal.science/hal-04647322; https://hal.science/hal-04647322v2/document; https://hal.science/hal-04647322v2/file/Full%20paper%20ISPSD-Mathis-Picot-Digoix-2024-HAL-V3.pdf

الاتاحة: https://hal.science/hal-04647322
https://hal.science/hal-04647322v2/document
https://hal.science/hal-04647322v2/file/Full%20paper%20ISPSD-Mathis-Picot-Digoix-2024-HAL-V3.pdf
https://doi.org/10.1109/ISPSD59661.2024.10579698

المؤلفون: Shubhangi Bhadoria, Qianwen Xu, Xiongfei Wang, Hans-Peter Nee

المصدر: Energies, Vol 17, Iss 17, p 4319 (2024)

مصطلحات موضوعية: conduction losses, gate driver, gate oxide, HVDC, on-state resistance, over-current, Technology

وصف الملف: electronic resource

Relation: https://www.mdpi.com/1996-1073/17/17/4319; https://doaj.org/toc/1996-1073

URL الوصول: https://doaj.org/article/5f703c3f9390462ca614c52ef0896d20

المؤلفون: Shilie He, Meiling Yu, Yiqiang Chen, Zhenwei Zhou, Lubin Yu, Chao Zhang, Yuanhua Ni

المصدر: Micromachines, Vol 15, Iss 8, p 985 (2024)

مصطلحات موضوعية: IGBT, gate oxide layer degradation, feature fusion, performance prediction, MultiScaleFormer network, Mechanical engineering and machinery, TJ1-1570

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2072-666X/15/8/985; https://doaj.org/toc/2072-666X

URL الوصول: https://doaj.org/article/1ae20028c91f4b578bc8f55dde72451e

المؤلفون: Limeng Shi, Jiashu Qian, Michael Jin, Monikuntala Bhattacharya, Shiva Houshmand, Hengyu Yu, Atsushi Shimbori, Marvin H. White, Anant K. Agarwal

المصدر: Electronics ; Volume 13 ; Issue 22 ; Pages: 4516

مصطلحات موضوعية: threshold voltage, gate leakage current, gate oxide lifetime, charge trapping, planar and trench

وصف الملف: application/pdf

Relation: Power Electronics; https://dx.doi.org/10.3390/electronics13224516

الاتاحة: https://doi.org/10.3390/electronics13224516

المؤلفون: Shailendra Singh, Suneet Kumar Agnihotri, Navjeet Bagga, Dip Prakash Samajdar

مصطلحات موضوعية: Biophysics, Biochemistry, Medicine, Microbiology, Genetics, Neuroscience, Biotechnology, Cancer, Infectious Diseases, Plant Biology, Space Science, Environmental Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, vertical tunnel field, various electrical properties, source channel junction, ferroelectric gate oxide, electric field (<, decreased subthreshold slope, channel voltage increases, charge density (<, narrow band gap, drain current (<, band tunneling based, free biosensing applications, sige heterojunction pocket, band tunneling, biosensing applications, pocket doping, charge carriers

Relation: https://figshare.com/articles/journal_contribution/Assessment_of_the_Biosensing_Capabilities_of_SiGe_Heterojunction_Negative_Capacitance-Vertical_Tunnel_Field-Effect_Transistor/25012592

الاتاحة: https://doi.org/10.1021/acsabm.3c00738.s001
https://figshare.com/articles/journal_contribution/Assessment_of_the_Biosensing_Capabilities_of_SiGe_Heterojunction_Negative_Capacitance-Vertical_Tunnel_Field-Effect_Transistor/25012592

المؤلفون: Jiashu Qian, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Atsushi Shimbori, Hengyu Yu, Shiva Houshmand, Marvin H. White, Anant K. Agarwal

المصدر: Materials, Vol 17, Iss 7, p 1455 (2024)

مصطلحات موضوعية: thermal gate oxide, SiC, MOSFET, charge-driven breakdown, Q BD, CCS, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85

Relation: https://www.mdpi.com/1996-1944/17/7/1455; https://doaj.org/toc/1996-1944; https://doaj.org/article/bcb659463d6f43b7af0bb37f4331bbb1

الاتاحة: https://doi.org/10.3390/ma17071455
https://doaj.org/article/bcb659463d6f43b7af0bb37f4331bbb1

المؤلفون: Meng Zhang, Yamin Zhang, Baikui Li, Shiwei Feng, Mengyuan Hua, Xi Tang, Jin Wei, Kevin J. Chen

المصدر: IEEE Journal of the Electron Devices Society, Vol 11, Pp 198-203 (2023)

مصطلحات موضوعية: SiC IGBT, oxide shield, on-state voltage drop, maximum gate oxide electric field, turn-off energy loss, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10077731/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/1e76b83108aa442a80222ed664a1898d

المؤلفون: Sidhu, Ramneek, Rai, Mayank Kumar

المصدر: Circuit World, 2021, Vol. 48, Issue 4, pp. 451-463.

URL الوصول: http://www.emeraldinsight.com/doi/10.1108/CW-09-2020-0233

المؤلفون: Andrew T. Binder, James A. Cooper, Jeffrey Steinfeldt, Andrew A. Allerman, Richard Floyd, Luke Yates, Robert J. Kaplar

المصدر: e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 5, Iss , Pp 100218- (2023)

مصطلحات موضوعية: Gallium nitride, Vertical GaN, Trench MOSFET, Gate oxide protection, Buried field shield, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2772671123001134; https://doaj.org/toc/2772-6711

URL الوصول: https://doaj.org/article/b7c8e9011ad2440cbab5a3681ba9f291

المؤلفون: Tomasz Bieniek, Romuald B. Beck, Andrzej Jakubowski, Grzegorz Głuszko, Piotr Konarski, Michał Ćwil

المصدر: Journal of Telecommunications and Information Technology, Iss 3 (2023)

مصطلحات موضوعية: CMOS, dual gate oxide, gate stack, oxynitride, plasma implantation, Telecommunication, TK5101-6720, Information technology, T58.5-58.64

وصف الملف: electronic resource

Relation: https://jtit.pl/jtit/article/view/819; https://doaj.org/toc/1509-4553; https://doaj.org/toc/1899-8852

URL الوصول: https://doaj.org/article/2848ffbfd9ec43f4ae7e5115d8f77103

المؤلفون: Ziyang Zhang, Lin Liang, Haoyang Fei

المصدر: Power Electronic Devices and Components, Vol 4, Iss , Pp 100026- (2023)

مصطلحات موضوعية: Failure mode, Safe operating area, Degradation, SiC MOSFET, Gate oxide damage, Thermal runaway, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2772370422000232; https://doaj.org/toc/2772-3704

URL الوصول: https://doaj.org/article/daa127b9eddc4fbe8def79f4342bb97b

المؤلفون: Dongyoung Kim, Nick Yun, Seung Yup Jang, Adam J. Morgan, Woongje Sung

المصدر: IEEE Journal of the Electron Devices Society, Vol 10, Pp 495-503 (2022)

مصطلحات موضوعية: SiC, MOSFETs, channel length, channel diode, channel doping, gate oxide, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9803024/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/859cb6448bc44aa1ba441aa4e7d8c9ea

المؤلفون: Mohammed Adamu Sule, Denis Jonathan D., Bashir I. Njodi, K.A Saidu, Maryam Abdulkadir

المصدر: Engineering and Technology Journal, 8(07), 2458-2461, (2023-07-29)

مصطلحات موضوعية: Silicon Nitrate, Gate oxide, Leakage current, Junctionless transistor, Silicon dioxide,Dielectric constant

Relation: https://doi.org/10.5281/zenodo.8195486; https://doi.org/10.5281/zenodo.8195487; oai:zenodo.org:8195487

الاتاحة: https://doi.org/10.5281/zenodo.8195487

المؤلفون: Ofelia Durante, Kimberly Intonti, Loredana Viscardi, Sebastiano De Stefano, Enver Faella, Arun Kumar, Aniello Pelella, Francesco Romeo, Filippo Giubileo, Manal Safar G. Alghamdi, Mohammed Ali S. Alshehri, Monica F Craciun, Saverio Russo, Antonio Di Bartolomeo

مصطلحات موضوعية: Biophysics, Molecular Biology, Physiology, Mental Health, Environmental Sciences not elsewhere classified, Astronomical and Space Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Mathematical Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, reduces power consumption, metal dichalcogenide family, dimensional rhenium disulfide, sweeping gate voltage, subthreshold region coincides, gate oxide traps, fets ), photodetectors, operational temperature range, high temperatures two, 2 , subthreshold current suppression, high temperatures, subthreshold current, gate current, based fets, drain current, current within, transfer characteristics, specific temperature

Relation: https://figshare.com/articles/journal_contribution/Subthreshold_Current_Suppression_in_ReS_sub_2_sub_Nanosheet-Based_Field-Effect_Transistors_at_High_Temperatures/24573812

الاتاحة: https://doi.org/10.1021/acsanm.3c03685.s001
https://figshare.com/articles/journal_contribution/Subthreshold_Current_Suppression_in_ReS_sub_2_sub_Nanosheet-Based_Field-Effect_Transistors_at_High_Temperatures/24573812

المؤلفون: Tianzhi Gao, Jianye Yang, Hongxia Liu, Yong Lu, Changjun Liu

المصدر: Micromachines; Volume 14; Issue 8; Pages: 1504

مصطلحات موضوعية: time-dependent dielectric breakdown, critical parameters, threshold voltage shift, gate oxide, partially depleted silicon-on-insulator

وصف الملف: application/pdf

Relation: D：Materials and Processing; https://dx.doi.org/10.3390/mi14081504

الاتاحة: https://doi.org/10.3390/mi14081504

المؤلفون: Jaechang Kim, Minh-Hoang Nguyen, Sangshin Kwak, Seungdeog Choi

المصدر: Machines; Volume 11; Issue 6; Pages: 612

مصطلحات موضوعية: lifetime extension, SiC MOSFET, gate oxide degradation, switching frequency, space vector PWM, discontinuous PWM, three-phase voltage source inverter, junction temperature

وصف الملف: application/pdf

Relation: Electrical Machines and Drives; https://dx.doi.org/10.3390/machines11060612

الاتاحة: https://doi.org/10.3390/machines11060612