المؤلفون: Hyojin Park, Gyuhyun Kil, Wonju Sung, Junghoon Han, Jungwoo Song, Byoungdeog Choi

المصدر: IEEE Access, Vol 12, Pp 139427-139434 (2024)

مصطلحات موضوعية: ALD, DRAM, dielectric, gate first high-k/metal gate, gate oxide reliability, HKMG, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10680011/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/e56a0bc5646e40389047d36e9136ccd7

المؤلفون: Sidhu, Ramneek, Rai, Mayank Kumar

المصدر: Circuit World, 2021, Vol. 48, Issue 4, pp. 451-463.

URL الوصول: http://www.emeraldinsight.com/doi/10.1108/CW-09-2020-0233

المؤلفون: Tianshi Liu, Shengnan Zhu, Marvin H. White, Arash Salemi, David Sheridan, Anant K. Agarwal

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 633-639 (2021)

مصطلحات موضوعية: Electron and hole trapping, impact ionization, gate oxide reliability, lifetime, silicon carbide (SiC) power MOSFETs, time-dependent dielectric breakdown (TDDB), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9463426/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/876b714310a14a6bb666889dc309fd55

المؤلفون: Spejo LB, Rehm S, Novak V, Ammann B, Würsch P, Stark R, Knoll L, Schulz N, Minamisawa RA

مصطلحات موضوعية: neutron irradiation, proton irradiation, cosmic ray reliability, gate oxide reliability, trench Si JGBT

Relation: Science and Technology Facilities Council (2007- ); ISIS (1984- ); ISIS - CHIPIR; http://purl.org/net/epubs/work/58471607

الاتاحة: http://purl.org/net/epubs/work/58471607

المؤلفون: Marvin H. White, Shengnan Zhu, Tianshi Liu, David C. Sheridan, Anant K. Agarwal, Arash Salemi

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 633-639 (2021)

مصطلحات موضوعية: lifetime, time-dependent dielectric breakdown (TDDB), gate oxide reliability, Materials science, Dielectric strength, Electron and hole trapping, silicon carbide (SiC) power MOSFETs, Oxide, Time-dependent gate oxide breakdown, TK1-9971, Electronic, Optical and Magnetic Materials, Threshold voltage, Impact ionization, chemistry.chemical_compound, chemistry, Electric field, MOSFET, impact ionization, Electrical engineering. Electronics. Nuclear engineering, Electrical and Electronic Engineering, Atomic physics, Biotechnology, Leakage (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70ab98a5894679e62c2f619beb98b4e6
https://doi.org/10.1109/jeds.2021.3091898

المؤلفون: Fayyaz, A., Castellazzi, A.

مصطلحات موضوعية: SiC, Power MOSFETs, Gate-oxide reliability, Robustness, Wide bandgap, SiC/SiO2 interface

Relation: https://nottingham-repository.worktribe.com/output/756093; Microelectronics Reliability; Volume 55; Issue 9-10; Pagination 1724-1728; https://nottingham-repository.worktribe.com/file/756093/1/High%20temperature%20pulsed-gate%20robustness%20testing%20of%20SiC%20power%20MOSFETs.pdf

الاتاحة: https://doi.org/10.1016/j.microrel.2015.06.141
https://nottingham-repository.worktribe.com/file/756093/1/High%20temperature%20pulsed-gate%20robustness%20testing%20of%20SiC%20power%20MOSFETs.pdf
https://nottingham-repository.worktribe.com/output/756093

المؤلفون: Malandruccolo, Vezio, Ciappa, Mauro, Rothleitner, Hubert, Fichtner, Wolfgang

المصدر: Journal of electronic testing, 27 (1)

مصطلحات موضوعية: Gate stress test, Gate oxide reliability, Crystal defects, Burn-in, Low side switch

وصف الملف: application/application/pdf

Relation: info:eu-repo/semantics/altIdentifier/wos/000288768900003; http://hdl.handle.net/20.500.11850/29462

الاتاحة: https://hdl.handle.net/20.500.11850/29462
https://doi.org/10.3929/ethz-b-000029462

المؤلفون: Jung-Sheng CHEN, Ming-Dou KER

المصدر: IEICE Transactions on Electronics. 2008, E91.C(3):378

المؤلفون: Bai-Sun KONG, Chilgee LEE, Joung-Yeal KIM, Sang-Keun HAN, Su-Jin PARK, Tae Hee HAN, Yong-Ki KIM, Young-Hyun JUN

المصدر: IEICE Transactions on Electronics. 2010, E93.C(5):709

المؤلفون: Sadik, Diane-Perle, Lim, Jang-Kwon, Ranstad, P., Nee, Hans-Peter

المصدر: StandUp Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on. :1-10

مصطلحات موضوعية: circuit reliability, elemental semiconductors, logic gates, power MOSFET, bipolar degradation, body-diode conduction test, body-diode reliability, gate-oxide reliability, long-term parameter variations, negative bias, potential drift detection, potential drift quantification, silicon carbide power MOSFET, Logic gates, MOSFET, Reliability, Silicon carbide, Stress, Temperature measurement, Threshold voltage, Device characterization, Power semiconductor device, Robustness, Silicon Carbide (SiC), Wide bandgap devices

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-182756

المؤلفون: Wolfgang Fichtner, Mauro Ciappa, Hubert Rothleitner, Vezio Malandruccolo

المصدر: Journal of electronic testing, 27 (1)

مصطلحات موضوعية: Engineering, Low side switch, business.industry, Crystal defects, Transistor, Automotive industry, High voltage, Hardware_PERFORMANCEANDRELIABILITY, Gate stress test, Gate oxide reliability, Burn-in, law.invention, Reliability (semiconductor), Gate oxide, law, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Electrical and Electronic Engineering, Control logic, business, Screening procedures, Hardware_LOGICDESIGN

وصف الملف: application/application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8dda87201719a9a319f803d81456f092
https://doi.org/10.1007/s10836-010-5178-3

المؤلفون: Gay, Roméric

المساهمون: Aix-Marseille, Aziza, Hassen, Della Marca, Vincenzo, Marzaki, Abderrezak

مصطلحات موضوعية: Nvm, Transistor MOSFET, Transistor en tranchée, Transistor triple grille, Transistor multigrille, Fiabilité d’oxyde de grille, Simulation électrique, MOSFET transistor, Trench transistor, Triple gate transistor, Multigate transistor, Gate oxide reliability, Electrical simulation

Relation: http://www.theses.fr/2022AIXM0218

الاتاحة: http://www.theses.fr/2022AIXM0218

المؤلفون: Alberto Castellazzi, Asad Fayyaz

مصطلحات موضوعية: SiC, Materials science, Gate-oxide reliability, Robustness testing, Hardware_PERFORMANCEANDRELIABILITY, Power MOSFETs, chemistry.chemical_compound, Robustness (computer science), Gate oxide, Electric field, Electronic engineering, Silicon carbide, Hardware_INTEGRATEDCIRCUITS, Electrical and Electronic Engineering, Power MOSFET, Safety, Risk, Reliability and Quality, Robustness, Wide bandgap, Condensed Matter Physics, Engineering physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Threshold voltage, SiC/SiO2 interface, chemistry, AND gate, Hardware_LOGICDESIGN

وصف الملف: PDF; application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e7a62a69cb0b4ca99591e657f6cceeb

المؤلفون: Bai, P., Chang, K., Kajen, R.S., Li, E., Samudra, G.

المساهمون: ELECTRICAL & COMPUTER ENGINEERING

المصدر: Scopus

مصطلحات موضوعية: Breakdown onset voltages, Double-gate MOSFET, Gate oxide reliability, Impact ionization, Monte carlo method

Relation: Bai, P.,Chang, K.,Kajen, R.S.,Li, E.,Samudra, G. (2008). On the impact ionization in double-gate MOSFET using full band monte carlo method. 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO : 335-338. ScholarBank@NUS Repository. https://doi.org/10.1109/NANO.2008.105; http://scholarbank.nus.edu.sg/handle/10635/71229; NOT_IN_WOS

الاتاحة: http://scholarbank.nus.edu.sg/handle/10635/71229

المؤلفون: Jin, Hao, Dong, Shurong, Miao, Meng, Liou, Juin Jei, Yang, Cary Y.

المصدر: Faculty Bibliography 2010s

مصطلحات موضوعية: GATE OXIDE RELIABILITY, DEPENDENCE, Physics, Applied

وصف الملف: application/pdf

Relation: https://stars.library.ucf.edu/facultybib2010/1437; https://stars.library.ucf.edu/cgi/viewcontent.cgi?article=2436&context=facultybib2010

الاتاحة: https://stars.library.ucf.edu/facultybib2010/1437
https://stars.library.ucf.edu/cgi/viewcontent.cgi?article=2436&context=facultybib2010

المؤلفون: Zhu, Shengnan

Advisors: Agarwal, Anant

URL: http://rave.ohiolink.edu/etdc/view?acc_num=osu1682030106046766

المؤلفون: Wang, Tzu-Ming, Ker, Ming-Dou, Liao, Hung-Tai

المساهمون: 電子工程學系及電子研究所, Department of Electronics Engineering and Institute of Electronics

مصطلحات موضوعية: Crystal oscillator, gate-oxide reliability, mixed-voltage I/O

Relation: http://dx.doi.org/10.1109/TCSI.2009.2016172; http://hdl.handle.net/11536/27654; IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS; WOS:000266409000012

الاتاحة: http://hdl.handle.net/11536/27654
https://doi.org/10.1109/TCSI.2009.2016172

المؤلفون: 吳幼麟, Wu, YL

المساهمون: 科技學院:電機工程學系, Wu, YL (Wu, You-Lin), Lin, ST (Lin, Shi-Tin)

مصطلحات موضوعية: GATE OXIDE RELIABILITY, DIELECTRIC-BREAKDOWN, SILICON-OXIDE

وصف الملف: 108 bytes; text/html

Relation: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 69 (2-3): 470-474 FEB-MAR 2008; http://ir.ncnu.edu.tw:8080/handle/310010000/13098; http://ir.ncnu.edu.tw:8080/bitstream/310010000/13098/1/index.html

الاتاحة: http://ir.ncnu.edu.tw:8080/handle/310010000/13098
http://ir.ncnu.edu.tw:8080/bitstream/310010000/13098/1/index.html

المؤلفون: 林式庭, Lin, ST

المساهمون: 科技學院:電機工程學系, Wu, YL (Wu, You-Lin), Lin, ST (Lin, Shi-Tin)

مصطلحات موضوعية: GATE OXIDE RELIABILITY, DIELECTRIC-BREAKDOWN, SILICON-OXIDE

وصف الملف: 108 bytes; text/html

Relation: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 69 (2-3): 470-474 FEB-MAR 2008; http://ir.ncnu.edu.tw:8080/handle/310010000/12707; http://ir.ncnu.edu.tw:8080/bitstream/310010000/12707/1/index.html

الاتاحة: http://ir.ncnu.edu.tw:8080/handle/310010000/12707
http://ir.ncnu.edu.tw:8080/bitstream/310010000/12707/1/index.html

المؤلفون: Ker, Ming-Dou, Chen, Jung-Sheng

المساهمون: 電機學院, 電子工程學系及電子研究所, College of Electrical and Computer Engineering, Department of Electronics Engineering and Institute of Electronics

مصطلحات موضوعية: analog circuit, dielectric breakdown, gate-oxide reliability, MOSFETs, operational amplifier

Relation: http://dx.doi.org/10.1109/TDMR.2008.922016; http://hdl.handle.net/11536/8742; IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY; WOS:000256886300021

الاتاحة: http://hdl.handle.net/11536/8742
https://doi.org/10.1109/TDMR.2008.922016