المؤلفون: Manuel Fregolent, Mirco Boito, Michele Disaro, Carlo De Santi, Matteo Buffolo, Eleonora Canato, Michele Gallo, Cristina Miccoli, Isabella Rossetto, Giansalvo Pizzo, Alfio Russo, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 703-709 (2024)

مصطلحات موضوعية: p-GaN HEMT, gate Leakage current, reliability, electroluminescence, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10664574/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/15a4697f89804f29a689c0c64e591d90

المؤلفون: N.M.S. Tawfik, A. Shaker, I. Sayed, H. Kamel, M.S. Salem, M. Dessouky, M. Fedawy

المصدر: Alexandria Engineering Journal, Vol 72, Iss , Pp 169-180 (2023)

مصطلحات موضوعية: TFET, Gate Leakage Current, Transmission Line Method (TLM), Pseudo-2D, Image Force, Engineering (General). Civil engineering (General), TA1-2040

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S1110016823002624; https://doaj.org/toc/1110-0168

URL الوصول: https://doaj.org/article/f025cac206c042df9eb3d562f8b621b7

المؤلفون: D. Favero, C. De Santi, A. Nardo, A. Dixit, P. Vanmeerbeek, A. Stockman, M. Tack, G. Meneghesso, E. Zanoni, M. Meneghini

المصدر: Applied Physics Express, Vol 17, Iss 10, p 104001 (2024)

مصطلحات موضوعية: p-GaN gate HEMTs, threshold voltage instabilities, gate leakage current, Schottky barrier height, hole injection, Physics, QC1-999

Relation: https://doi.org/10.35848/1882-0786/ad7f20; https://doaj.org/toc/1882-0786; https://doaj.org/article/5a5f50e47a10457bb368574ebbdf76c4

الاتاحة: https://doi.org/10.35848/1882-0786/ad7f20
https://doaj.org/article/5a5f50e47a10457bb368574ebbdf76c4

المؤلفون: Limeng Shi, Jiashu Qian, Michael Jin, Monikuntala Bhattacharya, Shiva Houshmand, Hengyu Yu, Atsushi Shimbori, Marvin H. White, Anant K. Agarwal

المصدر: Electronics ; Volume 13 ; Issue 22 ; Pages: 4516

مصطلحات موضوعية: threshold voltage, gate leakage current, gate oxide lifetime, charge trapping, planar and trench

وصف الملف: application/pdf

Relation: Power Electronics; https://dx.doi.org/10.3390/electronics13224516

الاتاحة: https://doi.org/10.3390/electronics13224516

المؤلفون: Alaei, Mojtaba, Borga, Matteo, Fabris, Elena, Decoutere, Stefaan, Lauwaert, Johan, Bakeroot, Benoit

المصدر: IEEE TRANSACTIONS ON ELECTRON DEVICES ; ISSN: 0018-9383 ; ISSN: 1557-9646

مصطلحات موضوعية: Technology and Engineering, Logic gates, HEMTs, MODFETs, Semiconductor process modeling, Wide band gap semiconductors, Aluminum gallium nitride, Leakage currents, Breakdown voltage, engineered gradient p-GaN doping, forward bias gate leakage current, gate leakage, junction voltage, p-GaN gate high-electron-mobility transistors (HEMTs), uniform p-GaN doping, THRESHOLD VOLTAGE, DENSITY

وصف الملف: application/pdf

Relation: info:eu-repo/grantAgreement/EC/H2020/871130; https://biblio.ugent.be/publication/01J0W3WQB5XP8AQ3MJKZ98A8HG; http://doi.org/10.1109/TED.2024.3418292; https://biblio.ugent.be/publication/01J0W3WQB5XP8AQ3MJKZ98A8HG/file/01J1YJ1QAS0S9QYYDFXM339RNQ

الاتاحة: https://biblio.ugent.be/publication/01J0W3WQB5XP8AQ3MJKZ98A8HG
http://hdl.handle.net/1854/LU-01J0W3WQB5XP8AQ3MJKZ98A8HG
https://doi.org/10.1109/TED.2024.3418292
https://biblio.ugent.be/publication/01J0W3WQB5XP8AQ3MJKZ98A8HG/file/01J1YJ1QAS0S9QYYDFXM339RNQ

المؤلفون: An-Chen Liu, Yu-Wen Huang, Hsin-Chu Chen, Hao-Chung Kuo

المصدر: Micromachines, Vol 15, Iss 4, p 517 (2024)

مصطلحات موضوعية: p-GaN gate, HEMT, epitaxy, threshold voltage, gate leakage current, Mechanical engineering and machinery, TJ1-1570

Relation: https://www.mdpi.com/2072-666X/15/4/517; https://doaj.org/toc/2072-666X; https://doaj.org/article/41359acb07fa461a8455ab71c1169c8a

الاتاحة: https://doi.org/10.3390/mi15040517
https://doaj.org/article/41359acb07fa461a8455ab71c1169c8a

المؤلفون: Alaei, Mojtaba, Borga, Matteo, Fabris, Elena, Decoutere, Stefaan, Lauwaert, Johan, Bakeroot, Benoit

المصدر: IEEE TRANSACTIONS ON ELECTRON DEVICES ; ISSN: 0018-9383 ; ISSN: 1557-9646

مصطلحات موضوعية: Technology and Engineering, MODFETs, HEMTs, Logic gates, Mathematical models, Wide band gap semiconductors, Aluminum gallium nitride, Semiconductor process modeling, Barrier voltage, breakdown, forward bias gate leakage current, junction voltage, p-GaN doping engineering, p-GaN gate HEMTs, uniform p-GaN doping, AVALANCHE BREAKDOWN VOLTAGE, THRESHOLD VOLTAGE, DENSITY

وصف الملف: application/pdf

Relation: info:eu-repo/grantAgreement/EC/H2020/871130; https://biblio.ugent.be/publication/01J6CVCNQKTVB6FVC8F2H0TZ0D; http://doi.org/10.1109/TED.2024.3446488; https://biblio.ugent.be/publication/01J6CVCNQKTVB6FVC8F2H0TZ0D/file/01JDRYNEWH3JAKXK25B10FF0TS

الاتاحة: https://biblio.ugent.be/publication/01J6CVCNQKTVB6FVC8F2H0TZ0D
http://hdl.handle.net/1854/LU-01J6CVCNQKTVB6FVC8F2H0TZ0D
https://doi.org/10.1109/TED.2024.3446488
https://biblio.ugent.be/publication/01J6CVCNQKTVB6FVC8F2H0TZ0D/file/01JDRYNEWH3JAKXK25B10FF0TS

المؤلفون: Ling-Feng Mao

المصدر: ETRI Journal, Vol 44, Iss 3, Pp 504-511 (2022)

مصطلحات موضوعية: gan, gate leakage current, hot carrier, monte carlo, quantum coupling, Telecommunication, TK5101-6720, Electronics, TK7800-8360

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1225-6463

URL الوصول: https://doaj.org/article/d3cf6ce203834e97874ed05bc116ac77

المؤلفون: Thinh Dang Cong, Phuc Ton That Bao, Trang Hoang

المصدر: Ain Shams Engineering Journal, Vol 14, Iss 4, Pp 101917- (2023)

مصطلحات موضوعية: Floating-gate MOS, Flash memory cell, Tunneling effects, CMOS technology, Gate leakage current, TCAD tool, Engineering (General). Civil engineering (General), TA1-2040

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2090447922002283; https://doaj.org/toc/2090-4479

URL الوصول: https://doaj.org/article/5023e4eeaebc412c8eb35bddc6faf8e3

المؤلفون: Censong Liu, Jie Wang, Zhanfei Chen, Jun Liu, Jiangtao Su

المصدر: Micromachines; Volume 14; Issue 2; Pages: 305

مصطلحات موضوعية: AlGaN/GaN HEMTs, threading dislocations, current collapse, gate leakage current, modeling

وصف الملف: application/pdf

Relation: D1: Semiconductor Devices; https://dx.doi.org/10.3390/mi14020305

الاتاحة: https://doi.org/10.3390/mi14020305

المؤلفون: Sean F. Romanuik, Bishakh Rout, Pierre-Luc Girard-Lauriault, Sharmistha Bhadra

المصدر: Electronics; Volume 11; Issue 22; Pages: 3719

مصطلحات موضوعية: gate leakage current, printed electrodes, printed electronics, single-walled carbon nanotubes, solution processes, thin-film transistor

وصف الملف: application/pdf

Relation: Artificial Intelligence Circuits and Systems (AICAS); https://dx.doi.org/10.3390/electronics11223719

الاتاحة: https://doi.org/10.3390/electronics11223719

المؤلفون: A. Manikandan

المصدر: Journal of Electronics,Computer Networking and Applied Mathematics(JECNAM) ISSN : 2799-1156; Vol. 2 No. 02 (2022): Feb-Mar 2022; 29-39 ; 2799-1156

مصطلحات موضوعية: Low Scale, Gate Leakage Current, Sub Threshold Current

وصف الملف: application/pdf

Relation: http://journal.hmjournals.com/index.php/JECNAM/article/view/1700/1999; http://journal.hmjournals.com/index.php/JECNAM/article/view/1700

الاتاحة: http://journal.hmjournals.com/index.php/JECNAM/article/view/1700

المؤلفون: E., Papanasam, Kailath, Binsu J.

المصدر: Microelectronics International, 2018, Vol. 35, Issue 2, pp. 65-73.

URL الوصول: http://www.emeraldinsight.com/doi/10.1108/MI-10-2016-0070

المؤلفون: Arun Kumar, P. S. T. N. Srinivas, Pramod Kumar Tiwari

المصدر: IEEE Journal of the Electron Devices Society, Vol 7, Pp 1100-1108 (2019)

مصطلحات موضوعية: DGAA MOSFETs, silicon-nanotube, HCI, SHE, gate leakage current, negative-differential-conductance (NDC), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8869879/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/bae845e55fa74d5a98be872722acdd12

المؤلفون: Koji Hidaka, Masaaki Koganemaru, Nobuyuki Shishido, Shizuo Tokito, Shoji Kamiya, Takeo Minari, Tomohito Sekine, Toru Ikeda, 三成 剛生, 宍戸 信之, 小金丸 正明, 日髙 功二, 時任 静士, 池田 徹, 神谷 庄司, 関根 智仁

المصدر: エレクトロニクス実装学会誌 / Journal of The Japan Institute of Electronics Packaging. 2021, 24(6):586

المؤلفون: Hossin, Mohamad Abdalla

مصطلحات موضوعية: 621.319, Semiconductors, MESFETs, Gate leakage current

URL الوصول: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.263129

المؤلفون: Pradeep, Krishna, Karatsori, T., Poiroux, T., Juge, A., Scheer, P., Gouget, G., Josse, E., Ghibaudo, Gérard

المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 ), STMicroelectronics Crolles (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), European Project: 662175,H2020,ECSEL-2014-2,WAYTOGO FAST(2015)

المصدر: 2018 ESSDERC Proceedings
2018 ESSDERC - 48th European Solid-State Device Research Conference (ESSDERC)
https://hal.science/hal-02065295
2018 ESSDERC - 48th European Solid-State Device Research Conference (ESSDERC), Sep 2018, Dresden, Germany. pp.242-245, ⟨10.1109/ESSDERC.2018.8486847⟩

مصطلحات موضوعية: WKB approximation, global variability, MOSFET, compact model, direct tunneling, gate leakage current, FD-SOI, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Dresden, Germany

Relation: info:eu-repo/grantAgreement//662175/EU/Which Architecture Yields Two Other Generations Of Fully depleted Advanced Substrate and Technologies/WAYTOGO FAST

الاتاحة: https://hal.science/hal-02065295
https://doi.org/10.1109/ESSDERC.2018.8486847

المؤلفون: Medina Bailón, Cristina, Padilla De la Torre, José Luis, Sadi, Toufik, Sampedro Matarín, Carlos, Godoy Medina, Andrés, Donetti, Luca, Georgiev, Vihar, Gámiz Pérez, Francisco Jesús, Asenov, Asen

مصطلحات موضوعية: direct Source-to-Drain tunneling, gate leakage current, band-to-band tunneling, Multi-Subband Ensemble Monte Carlo, FDSOI, DGSOI, FinFET

Relation: Print ISSN;0018-9383; C. Medina-Bailon et al., "Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices," in IEEE Transactions on Electron Devices, vol. 66, no. 3, pp. 1145-1152, March 2019, doi:10.1109/TED.2019.2890985.; http://hdl.handle.net/10481/69443

الاتاحة: http://hdl.handle.net/10481/69443
https://doi.org/10.1109/TED.2019.2890985

المؤلفون: In-Tae Hwang, Kyu-Won Jang, Hyun-Jung Kim, Sang-Heung Lee, Jong-Won Lim, Jin-Mo Yang, Ho-Sang Kwon, Hyun-Seok Kim

المصدر: Applied Sciences; Volume 9; Issue 17; Pages: 3610

مصطلحات موضوعية: GaN, metal-insulator-semiconductor high electron mobility transistor, gate leakage current, two-dimensional electron gas, breakdown voltage

جغرافية الموضوع: agris

وصف الملف: application/pdf

Relation: Nanotechnology and Applied Nanosciences; https://dx.doi.org/10.3390/app9173610

الاتاحة: https://doi.org/10.3390/app9173610

المؤلفون: Rodriguez, Raul, Perez, González, Benito, Garcia, Javier, Toulon, Gaëtan, Morancho, Frédéric, Núñez, Antonio

المساهمون: Instituto Universitario de Microelectrónica Aplicada, University of Las Palmas de Gran Canaria (ULPGC), Équipe Intégration de Systèmes de Gestion de l'Énergie (LAAS-ISGE), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)

المصدر: ISSN: 2079-9292 ; Electronics ; https://laas.hal.science/hal-01955666 ; Electronics, 2018, 7 (10), pp.210. ⟨10.3390/electronics7100210⟩.

مصطلحات موضوعية: AlGaN/GaN HEMT, gate leakage current, traps, numerical simulation, modeling, [SPI.TRON]Engineering Sciences [physics]/Electronics

Relation: hal-01955666; https://laas.hal.science/hal-01955666; https://laas.hal.science/hal-01955666/document; https://laas.hal.science/hal-01955666/file/electronics-07-00210.pdf

الاتاحة: https://laas.hal.science/hal-01955666
https://laas.hal.science/hal-01955666/document
https://laas.hal.science/hal-01955666/file/electronics-07-00210.pdf
https://doi.org/10.3390/electronics7100210