المؤلفون: Jyi-Tsong Lin, Wei-Heng Tai

المصدر: Discover Nano, Vol 19, Iss 1, Pp 1-20 (2024)

مصطلحات موضوعية: Forkshape, Nanosheet, Schottky barrier, Tunnel field-effect transistor (TFET), Gate ALL around (GAA), Heterojunction, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2731-9229

URL الوصول: https://doaj.org/article/cba3c7112606408cbc1aad648e6e763a

المؤلفون: Hima Bindu Valiveti, Indr Jeet Rajput, N. Udaya Kumar, Harsh Lohiya, R. Sri Uma Suseela, Atul Singla, Saurabh Rajvanshi

المصدر: Cogent Engineering, Vol 11, Iss 1 (2024)

مصطلحات موضوعية: NanoSheet FinFET (NS-FinFET), gate all around (GAA), silicon on insulator (SOI), low K and high K dielectric material, doping concentration, short channel effect (SCE), Engineering (General). Civil engineering (General), TA1-2040

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2331-1916

URL الوصول: https://doaj.org/article/e98e4e1ce6294f4790a7303cc1deee49

المؤلفون: Hakkee Jung

المصدر: AIMS Electronics and Electrical Engineering, Vol 8, Iss 2, Pp 211-226 (2024)

مصطلحات موضوعية: elliptic, gate-all-around (gaa), subthreshold swing, eccentricity, aspect ratio, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2578-1588

URL الوصول: https://doaj.org/article/02a2c1cdc1994aadb8f3cb3d2ac66172

المؤلفون: Rinku Rani Das, T. R. Rajalekshmi, Alex James

المصدر: IEEE Access, Vol 12, Pp 50556-50577 (2024)

مصطلحات موضوعية: Gate-all-around (GAA), multi-bridge channel (MBC), silicon on insulator (SOI), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10488424/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/c26182ad111e4b378d8db939625a10a1

المؤلفون: Chi-Cheng Tien, Yu-Hsien Lin

المصدر: IEEE Access, Vol 12, Pp 83629-83637 (2024)

مصطلحات موضوعية: Band-to-band tunneling (BTBT), CMOS, TFET, inverter, gate-all-around (GAA), low temperature, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10550940/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/bd1558ce295b4c2aab846b3190832d35

المؤلفون: Minji Bang, Jonghyeon Ha, Minki Suh, Dabok Lee, Minsang Ryu, Jin-Woo Han, Hyunchul Sagong, Hojoon Lee, Jungsik Kim

المصدر: IEEE Access, Vol 12, Pp 130347-130355 (2024)

مصطلحات موضوعية: Gate-all-around (GAA), nanosheet field-effect transistor (NSFET), static random-access memory (SRAM), single event upset (SEU), technology computer-aided design (TCAD) simulation, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10676981/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/c729c86dcf4b40dd8aafed6967dcc577

المؤلفون: Hyeong-Chan Son, Hyunwoo Kim

المصدر: IEEE Access, Vol 12, Pp 145393-145399 (2024)

مصطلحات موضوعية: Soft error, single-event transient (SET), gate-all-around (GAA), band-to-band tunneling (BTBT), ternary CMOS, heavy-ion effect, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10701305/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/11fb6963d4c64a0a989683d2ae32b1e7

المؤلفون: Zhanhang Chen, Haoliang Shan, Ziyi Ding, Xia Wu, Xiaolin Cen, Xiaoyu Ma, Wanling Deng, Junkai Huang

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 948-955 (2024)

مصطلحات موضوعية: Gate-all-around (GAA), band-to-band tunneling (BTBT), depletion region, tunnel field-effect transistor (TFET), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10713252/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/1d9adcd9dfc04d16848f5e967acd1d2d

المؤلفون: Changlim Woo, Abdelkader Abderrahmane, Pangum Jung, Pilju Ko

المصدر: Crystals, Vol 14, Iss 11, p 984 (2024)

مصطلحات موضوعية: transition metal dichalcogenides (TMDCs), molybdenum diselenide (MoSe2), tungsten diselenide (WSe2), junction field effect (JFET), gate all around (GAA), Crystallography, QD901-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2073-4352/14/11/984; https://doaj.org/toc/2073-4352

URL الوصول: https://doaj.org/article/be9f1620d7544064959f8cf61b73c882

المؤلفون: Hakkee Jung

المصدر: AIMS Electronics and Electrical Engineering, Vol 7, Iss 4, Pp 322-336 (2023)

مصطلحات موضوعية: subthreshold swing, junctionless, gate-all-around (gaa), ferroelectric, remanent polarization, coercive field, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2578-1588

URL الوصول: https://doaj.org/article/76267f4ff2e54087b2a0c1782f196062

المؤلفون: Yage Zhao, Zhongshan Xu, Huawei Tang, Yusi Zhao, Peishun Tang, Rongzheng Ding, Xiaona Zhu, David Wei Zhang, Shaofeng Yu

المصدر: Micromachines, Vol 15, Iss 2, p 218 (2024)

مصطلحات موضوعية: gate-all-around (GAA) Nanosheet FETs (NSFETs), compact model, artificial neural network (ANN), TCAD simulation, Mechanical engineering and machinery, TJ1-1570

Relation: https://www.mdpi.com/2072-666X/15/2/218; https://doaj.org/toc/2072-666X; https://doaj.org/article/7ba72594ae51493fbd7777ba25fbedcc

الاتاحة: https://doi.org/10.3390/mi15020218
https://doaj.org/article/7ba72594ae51493fbd7777ba25fbedcc

المؤلفون: Cong Li, Yali Shao, Fengyu Kuang, Fang Liu, Yunqi Wang, Xiaoming Li, Yiqi Zhuang

المصدر: Micromachines, Vol 15, Iss 4, p 424 (2024)

مصطلحات موضوعية: gate-all-around (GAA), band-to-band tunneling (BTBT), reliability, self-heating effect (SHE), nanosheet field-effect transistor (NSFET), Mechanical engineering and machinery, TJ1-1570

Relation: https://www.mdpi.com/2072-666X/15/4/424; https://doaj.org/toc/2072-666X; https://doaj.org/article/979f7537c9b04e0584b7ec01e978b396

الاتاحة: https://doi.org/10.3390/mi15040424
https://doaj.org/article/979f7537c9b04e0584b7ec01e978b396

المؤلفون: Kun Chen, Jingwen Yang, Chunlei Wu, Chen Wang, Min Xu, David Wei Zhang

المصدر: IEEE Access, Vol 11, Pp 65491-65495 (2023)

مصطلحات موضوعية: Gate-all-around (GAA), nanosheet (NS-FET), S/D stressor, stress enhancement, strain relaxed buffer, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10154003/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/cf404c6a3c16411b81156c4ba6e4a3dd

المؤلفون: Jie Gu, Qingzhu Zhang, Zhenhua Wu, Yanna Luo, Lei Cao, Yuwei Cai, Jiaxin Yao, Zhaohao Zhang, Gaobo Xu, Huaxiang Yin, Jun Luo, Wenwu Wang

المصدر: IEEE Journal of the Electron Devices Society, Vol 10, Pp 35-39 (2022)

مصطلحات موضوعية: Nanosheet FET, gate-all-around (GAA), sub-fin, parasitic channel, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9624781/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/73ee45be99644d4d9707828aa66e46c7

المؤلفون: Fengyu Kuang, Cong Li, Haokun Li, Hailong You, M. Jamal Deen

المصدر: Electronics; Volume 12; Issue 16; Pages: 3419

مصطلحات موضوعية: gate-all-around (GAA), inner spacer (IS), nanosheet (NS), inter-bridge (IB), cross-sectional shape, TCAD

وصف الملف: application/pdf

Relation: Semiconductor Devices; https://dx.doi.org/10.3390/electronics12163419

الاتاحة: https://doi.org/10.3390/electronics12163419

المؤلفون: Weijing Liu, Xinfu Pan, Jiangnan Liu, Qinghua Li

المصدر: Electronics; Volume 12; Issue 7; Pages: 1529

مصطلحات موضوعية: gate-all-around (GAA), TreeFET, interbridge, nanosheet, geometry parameters, electro-thermal, self-heating effects

وصف الملف: application/pdf

Relation: Semiconductor Devices; https://dx.doi.org/10.3390/electronics12071529

الاتاحة: https://doi.org/10.3390/electronics12071529

المؤلفون: Jingwen Yang, Kun Chen, Dawei Wang, Tao Liu, Xin Sun, Qiang Wang, Ziqiang Huang, Zhecheng Pan, Saisheng Xu, Chen Wang, Chunlei Wu, Min Xu, David Wei Zhang

المصدر: Micromachines; Volume 14; Issue 3; Pages: 611

مصطلحات موضوعية: Gate-All-Around (GAA), stress, nanosheet length, channel release, nanosheet deformation

وصف الملف: application/pdf

Relation: D：Materials and Processing; https://dx.doi.org/10.3390/mi14030611

الاتاحة: https://doi.org/10.3390/mi14030611

المؤلفون: Dawei Wang, Xin Sun, Tao Liu, Kun Chen, Jingwen Yang, Chunlei Wu, Min Xu, Wei (David) Zhang

المصدر: Electronics; Volume 12; Issue 3; Pages: 770

مصطلحات موضوعية: 5 nm node technology, gate-all-around (GAA), nanosheet (NS) FET, FinFET, source/drain recess

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/electronics12030770

الاتاحة: https://doi.org/10.3390/electronics12030770

المؤلفون: Huang Ziqiang, Liu Tao, Yang Jingwen, Sun Xin, Chen Kun, Wang Dawei, Hu Hailong, Xu Min, Wang Chen, Xu Saisheng, Zhang David Wei

المصدر: National Science Open, Vol 2 (2022)

مصطلحات موضوعية: non-destructive characterization, channel stress, gate all around (GAA), confocal Raman, Science, Engineering (General). Civil engineering (General), TA1-2040

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2097-1168

URL الوصول: https://doaj.org/article/695eeb28d6104fa3981118683a0c6b80

المؤلفون: E. Mohapatra, T. P. Dash, J. Jena, S. Das, C. K. Maiti

المصدر: SN Applied Sciences, Vol 3, Iss 5, Pp 1-13 (2021)

مصطلحات موضوعية: Stacked nanosheet FETs, Gate-all-around (GAA), Random discrete dopants (RDD), Source/drain extension, Metal gate granularity (MGG), Variability, Science, Technology

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2523-3963; https://doaj.org/toc/2523-3971

URL الوصول: https://doaj.org/article/66453b516d4546acadafa6a88beec25d