المؤلفون: Katsuro Sae, Lu Weifang, Ito Kazuma, Nakayama Nanami, Sone Naoki, Okuno Koji, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi, Akasaki Isamu

المصدر: Nanophotonics, Vol 10, Iss 13, Pp 3441-3450 (2021)

مصطلحات موضوعية: current injection, gainn/gan multiple-quantum-shells, nanowires, nw-leds, p-gan shell, teg flow rate, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2192-8614

URL الوصول: https://doaj.org/article/9ab4afbd776a4a9082a9ee5b732604c9

المؤلفون: Zhang, Chaoqiang, Gao, Ke, Wang, Fei, Chen, Zhiming, Shields, Philip, Lee, Sean, Wang, Yanqin, Zhang, Dongyan, Liu, Hongwei, Niu, Pingjuan

المصدر: Zhang , C , Gao , K , Wang , F , Chen , Z , Shields , P , Lee , S , Wang , Y , Zhang , D , Liu , H & Niu , P 2022 , ' Strain Relaxation Effect on the Peak Wavelength of Blue InGaN/GaN Multi-Quantum Well Micro-LEDs ' , Applied Sciences , vol. 12 , no. 15 , 7431 . https://doi.org/10.3390/app12157431

مصطلحات موضوعية: InGaN/GaN multiple quantum well (MQW), Raman shift, micro-LED arrays, photoluminescence (PL), strain relaxation, /dk/atira/pure/subjectarea/asjc/2500, name=Materials Science(all), /dk/atira/pure/subjectarea/asjc/3100/3105, name=Instrumentation, /dk/atira/pure/subjectarea/asjc/2200, name=Engineering(all), /dk/atira/pure/subjectarea/asjc/1500/1508, name=Process Chemistry and Technology, /dk/atira/pure/subjectarea/asjc/1700/1706, name=Computer Science Applications, /dk/atira/pure/subjectarea/asjc/1500/1507, name=Fluid Flow and Transfer Processes

Relation: https://researchportal.bath.ac.uk/en/publications/a9272903-03bf-4695-a0e7-bf46f5191229

الاتاحة: https://researchportal.bath.ac.uk/en/publications/a9272903-03bf-4695-a0e7-bf46f5191229
https://doi.org/10.3390/app12157431
http://www.scopus.com/inward/record.url?scp=85137001878&partnerID=8YFLogxK

المؤلفون: Wei Liu, Feng Liang, Degang Zhao, Jing Yang, Ping Chen, Zongshun Liu

المصدر: Crystals; Volume 12; Issue 3; Pages: 339

مصطلحات موضوعية: InGaN/GaN multiple quantum wells, photoluminescence, barrier thickness, carrier recombination, semiconductor crystal quality

وصف الملف: application/pdf

Relation: Inorganic Crystalline Materials; https://dx.doi.org/10.3390/cryst12030339

الاتاحة: https://doi.org/10.3390/cryst12030339

المؤلفون: Yuhao Ben, Feng Liang, Degang Zhao, Jing Yang, Ping Chen, Zongshun Liu

المصدر: Crystals; Volume 12; Issue 2; Pages: 171

مصطلحات موضوعية: GaN multiple quantum well, internal quantum efficiency, carrier leakage

وصف الملف: application/pdf

Relation: Inorganic Crystalline Materials; https://dx.doi.org/10.3390/cryst12020171

الاتاحة: https://doi.org/10.3390/cryst12020171

المؤلفون: Huan Xu, Xin Hou, Lan Chen, Yang Mei, Baoping Zhang

المصدر: Crystals; Volume 12; Issue 1; Pages: 114

مصطلحات موضوعية: InGaN/GaN multiple quantum wells, localization states well thickness, barrier thickness, photoluminescence

وصف الملف: application/pdf

Relation: Inorganic Crystalline Materials; https://dx.doi.org/10.3390/cryst12010114

الاتاحة: https://doi.org/10.3390/cryst12010114

المؤلفون: Cairong Ding, Zesheng Lv, Xueran Zeng, Baijun Zhang

المصدر: Nanomaterials, Vol 12, Iss 327, p 327 (2022)

مصطلحات موضوعية: InGaN/GaN multiple-quantum wells, superfluorescence, time-resolved photoluminescence, photoluminescence, collective emissions, Chemistry, QD1-999

Relation: https://www.mdpi.com/2079-4991/12/3/327; https://doaj.org/toc/2079-4991; https://doaj.org/article/8678acd3bbfb476687fab5a99b1deb80

الاتاحة: https://doi.org/10.3390/nano12030327
https://doaj.org/article/8678acd3bbfb476687fab5a99b1deb80

المؤلفون: Yufei Hou, Feng Liang, Degang Zhao, Zongshun Liu, Ping Chen, Jing Yang

المصدر: Results in Physics, Vol 31, Iss , Pp 105057- (2021)

مصطلحات موضوعية: InGaN/GaN multiple quantum wells, Luminescence properties, Thermal annealing, Interface quality, Physics, QC1-999

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2211379721010457; https://doaj.org/toc/2211-3797

URL الوصول: https://doaj.org/article/3a4b33131b054ff98088c2472ca4152d

المؤلفون: Yao Xing, Degang Zhao, Desheng Jiang, Zongshun Liu, Jianjun Zhu, Ping Chen, Jing Yang, Feng Liang, Shuangtao Liu, Liqun Zhang

المصدر: Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)

مصطلحات موضوعية: Semiconductor materials, InGaN/GaN multiple quantum wells, Photoluminescence, Carrier localization, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://link.springer.com/article/10.1186/s11671-019-2919-9; https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X

URL الوصول: https://doaj.org/article/4538ab7760084de1af741b6bd63c5a0d

المؤلفون: Jaime Segura-Ruiz (1740010), Damien Salomon (2149687), Andrei Rogalev (2000671), Joël Eymery (1367019), Benito Alén (11682214), Gema Martínez-Criado (1740001)

مصطلحات موضوعية: Biophysics, Medicine, Cell Biology, Evolutionary Biology, Sociology, Inorganic Chemistry, Science Policy, Infectious Diseases, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, optical spectroscopic information, hexagon wire apex, great potential becomes, ray microscopy technique, ray absorption spectroscopy, phenomenon called x, resolved carrier dynamics, gan wire time, carrier dynamics, ray nanoprobe, resolved x, resolved cathodoluminescence, gan wires, gan multiple, underlying mechanisms, spatiotemporal domain, spatial resolution, recombination rates, quantum wells

Relation: https://figshare.com/articles/journal_contribution/Spatially_and_Time-Resolved_Carrier_Dynamics_in_Core_Shell_InGaN_GaN_Multiple-Quantum_Wells_on_GaN_Wire/16992037

الاتاحة: https://doi.org/10.1021/acs.nanolett.1c02760.s001

المؤلفون: Jianfei Li, Duo Chen, Kuilong Li, Qiang Wang, Mengyao Shi, Dejie Diao, Chen Cheng, Changfu Li, Jiancai Leng

المصدر: Nanomaterials; Volume 11; Issue 11; Pages: 3134

مصطلحات موضوعية: InGaN/GaN multiple quantum well, low-temperature p-GaN layer, photoluminescence, electroluminescence, localization effect

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/nano11113134

الاتاحة: https://doi.org/10.3390/nano11113134

المؤلفون: Jianfei Li, Duo Chen, Kuilong Li, Qiang Wang, Mengyao Shi, Chen Cheng, Jiancai Leng

المصدر: Crystals; Volume 11; Issue 9; Pages: 1061

مصطلحات موضوعية: green InGaN/GaN Multiple-Quantum-Well, photoluminescence, electroluminescence, carrier dynamics

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/cryst11091061

الاتاحة: https://doi.org/10.3390/cryst11091061

المؤلفون: Heng-Sheng Shan, Xiao-Ya Li, Bin Chen, Shu-Fang Ma, Lu Li, Bing-She Xu

المصدر: IEEE Access, Vol 7, Pp 182573-182579 (2019)

مصطلحات موضوعية: Indium composition, microstructure and performance, InGaN/GaN multiple quantum wells (MQWs), solar cells, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8933145/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/259b25e99b7b43b5a93d6c5f76898798

المؤلفون: Tao Lin, Zhi Yan Zhou, Yao Min Huang, Kun Yang, Bai Jun Zhang, Zhe Chuan Feng

المصدر: Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-7 (2018)

مصطلحات موضوعية: InGaN/GaN multiple quantum well, Luminescence, Time-resolved photoluminescence, Silicon substrate, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://link.springer.com/article/10.1186/s11671-018-2663-6; https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X

URL الوصول: https://doaj.org/article/db2e20d53eb44c0fa55aa33d6e969722

المؤلفون: Isamu Akasaki, Kazuma Ito, Lu Weifang, Motoaki Iwaya, Nanami Nakayama, Naoki Sone, Renji Okuda, Sae Katsuro, Satoshi Kamiyama, Shiori Yamamura, Tetsuya Takeuchi, Weifang Lu, Yoshiya Miyamoto, Yukimi Jinno, 上山 智, 中山 奈々美, 伊藤 和真, 勝呂 紗衣, 奥田 廉士, 宮本 義也, 山村 志織, 岩谷 素顕, 曽根 直樹, 神野 幸美, 竹内 哲也, 赤崎 勇

المصدر: JSAP Annual Meetings Extended Abstracts. 2021, :2378

المؤلفون: Isamu Akasaki, Kazuma Ito, Lu Weifang, Motoaki Iwaya, Nanami Nakayama, Naoki Sone, Renji Okuda, Sae Katsuro, Satoshi Kamiyama, Shiori Yamamura, Tetsuya Takeuchi, Yoshiya Miyamoto, Yukimi Jinno, ウェイファン ルー, 上山 智, 中山 奈々美, 伊藤 和真, 勝呂 紗衣, 奥田 廉士, 宮本 義也, 山村 志織, 岩谷 素顕, 曽根 直樹, 神野 幸美, 竹内 哲也, 赤崎 勇

المصدر: JSAP Annual Meetings Extended Abstracts. 2021, :2377

المؤلفون: Sheremet, V., Genç, M., Elçi, M., Sheremet, Nina, Altuntaş, İsmail, Ding, Kai, Avrutin, Vitaliy, Özgür, Ümit, Morkoç, Hadis

المساهمون: Uludağ Üniversitesi/Mühendislik Fakültesi/Elektrik ve Elektronik Mühendisliği Bölümü., Aydınlı, Atilla, ABI-7535-2020, 7005432613

مصطلحات موضوعية: Physics, Current spreading, Indium tin oxide, InGaN/GaN multiple quantum well, LED, Transparent conductive electrodes, Efficiency droop, Semiconductors, Contacts, Gallium alloys, Indium alloys, Semiconducting indium compounds, Semiconductor junctions, Semiconductor quantum wells, Tin oxides, Finite conductivity, Current transfer, InGaN/GaN, Ingan/gan lightemitting diodes (LEDs), Inter-digitated electrodes, Light output power, Light emitting diodes, condensed matter, Flip Chip, Extraction Efficiency

وصف الملف: application/pdf

Relation: 113G042; Makale - Uluslararası Hakemli Dergi; Superlattices and Microstructures; Yurt içi; Sanayi; Yurt dışı; Sheremet, V. vd. (2017). ''The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes''. Superlattices and Microstructures, 111, 1177-1194.; https://doi.org/10.1016/j.spmi.2017.08.026; https://www.sciencedirect.com/science/article/pii/S0749603617314416; http://hdl.handle.net/11452/30256; 000415768800128; 2-s2.0-85029516809; 1177; 1194; 111

الاتاحة: http://hdl.handle.net/11452/30256
https://doi.org/10.1016/j.spmi.2017.08.026
https://www.sciencedirect.com/science/article/pii/S0749603617314416

المؤلفون: Qiang Wang, Duo Chen, Chen Cheng, Jiancai Leng, Jianfei Li, Kuilong Li, Mengyao Shi

المصدر: Crystals, Vol 11, Iss 1061, p 1061 (2021)
Crystals
Volume 11
Issue 9

مصطلحات موضوعية: Photoluminescence, Materials science, Crystallography, business.industry, General Chemical Engineering, Multiple quantum, green InGaN/GaN Multiple-Quantum-Well, Electroluminescence, Condensed Matter Physics, Spectral line, electroluminescence, Inorganic Chemistry, QD901-999, Green led, Optoelectronics, General Materials Science, photoluminescence, carrier dynamics, Carrier dynamics, business, Excitation, Diode

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7491194d9aa0c4f864e84cc3aebf2c80
https://www.mdpi.com/2073-4352/11/9/1061

المؤلفون: Li-Hong Zhu, Wei Liu, Fan-Ming Zeng, Yu-Lin Gao, Bao-Lin Liu, Yi-Jun Lu, Zhong Chen

المصدر: IEEE Photonics Journal, Vol 5, Iss 2, Pp 8200208-8200208 (2013)

مصطلحات موضوعية: Metal–organic chemical vapor deposition (MOCVD), InGaN/GaN multiple quantum well (MQW), electron leakage, efficiency droop, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467

Relation: https://ieeexplore.ieee.org/document/6472041/; https://doaj.org/toc/1943-0655; https://doaj.org/article/c07fd839450f4ecfb7f1e98919e04257

الاتاحة: https://doi.org/10.1109/JPHOT.2013.2245881
https://doaj.org/article/c07fd839450f4ecfb7f1e98919e04257

المؤلفون: Bing-She Xu, Xiaoya Li, Shu-Fang Ma, Lu Li, Bin Chen, Heng-Sheng Shan

المصدر: IEEE Access, Vol 7, Pp 182573-182579 (2019)

مصطلحات موضوعية: InGaN/GaN multiple quantum wells (MQWs), Materials science, General Computer Science, business.industry, Multiple quantum, microstructure and performance, General Engineering, chemistry.chemical_element, Microstructure, law.invention, Indium composition, chemistry, law, Solar cell, solar cells, Optoelectronics, Degradation (geology), General Materials Science, Composition (visual arts), lcsh:Electrical engineering. Electronics. Nuclear engineering, business, Photoelectric conversion efficiency, Current density, lcsh:TK1-9971, Indium

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6776cc2a1bd8ab0531ff569273f3411d
https://ieeexplore.ieee.org/document/8933145/

المؤلفون: Gao, HY, Yan, FW, Zhang, Y, Li, JM, Zeng, YP, Wang, GH, Gao, HY, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. 电子邮箱地址: hygao@semi.ac.cn

مصطلحات موضوعية: Ingan/gan Multiple Quantum Wells, Light-emitting Diode, Wet Etching, Inductively Coupled Plasma Etching, 半导体材料, light emitting diodes, leds (light emitting diodes), led, organic light emitting diodes, oled, polymer led, superluminescent diodes, led (diodes), light-emitting diodes, leds, organic led, light emitting diode

Relation: SOLID-STATE ELECTRONICS; Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP; Wang, GH .Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching ,SOLID-STATE ELECTRONICS,2008 ,52(6): 962-967; http://ir.semi.ac.cn/handle/172111/6610

الاتاحة: http://ir.semi.ac.cn/handle/172111/6610