المؤلفون: Boseong Son, Huijin Kim, Young-Woong Lee, Purusottam Reddy Bommireddy, Si-Hyun Park

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 905-911 (2024)

مصطلحات موضوعية: Wafer-scale monolithic integration, p-GaN-depletion MOSFET, GaN LED, micro-LED displays, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10668404/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/44f7e96cd5e84144b47ace29ba1494a8

المؤلفون: Md Jahid Faruki, Krishnendu Bera, Nemai Karmakar

المصدر: Photonics, Vol 11, Iss 6, p 542 (2024)

مصطلحات موضوعية: GaN LED, modulation bandwidth, visible light communications, crystal orientation, Applied optics. Photonics, TA1501-1820

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2304-6732/11/6/542; https://doaj.org/toc/2304-6732

URL الوصول: https://doaj.org/article/947edc26a47d49ad886e9911ca184f8b

المؤلفون: Alias, Ezzah Azimah, Samsudin, Muhammad Esmed Alif, DenBaars, Steven, Speck, James, Nakamura, Shuji, Zainal, Norzaini

المصدر: Microelectronics International, 2021, Vol. 38, Issue 3, pp. 93-98.

URL الوصول: http://www.emeraldinsight.com/doi/10.1108/MI-02-2021-0011

المؤلفون: Feifei Qin, Yue Cao, Meng Li, Shun Lu, Mufei Tian, Ying Yang, Junfeng Lu, Xu Wang, Binghui Li, Yongjin Wang, Gangyi Zhu

مصطلحات موضوعية: Biophysics, Cell Biology, Neuroscience, Physiology, Biotechnology, Ecology, Inorganic Chemistry, Plant Biology, Environmental Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, uniform emission pattern, study offers insights, spectrum filtering effect, interference effect influence, chip light sources, based gan light, lower surface temperature, 2 , light sources, surface temperature, gan led, waveguide ’, underlying mechanism, spectral modulation, size manufacturing, potential realization, layer ’, higher turn

Relation: https://figshare.com/articles/journal_contribution/Si-Based_GaN_Light-Emitting_Diodes_with_MoS_sub_2_sub_Nanosheet-Decorated_Fabry_Perot_Waveguide_Structure/24894217

الاتاحة: https://doi.org/10.1021/acsanm.3c05500.s001
https://figshare.com/articles/journal_contribution/Si-Based_GaN_Light-Emitting_Diodes_with_MoS_sub_2_sub_Nanosheet-Decorated_Fabry_Perot_Waveguide_Structure/24894217

المؤلفون: Dohyun Kim, UiJin Jung, Wonjun Heo, Navneet Kumar, Jinsub Park

المصدر: Applied Sciences; Volume 13; Issue 5; Pages: 3042

مصطلحات موضوعية: TiO 2 nanosphere monolayer, transfer method, GaN LED, light extraction, compound semiconductor

جغرافية الموضوع: agris

وصف الملف: application/pdf

Relation: Materials Science and Engineering; https://dx.doi.org/10.3390/app13053042

الاتاحة: https://doi.org/10.3390/app13053042

المؤلفون: Xiu Zhang, Baoxing Wang, Kai Fu, Rui Yue, Haojie Guo, Shuqi Li, Yong Cai

المصدر: Electronics; Volume 12; Issue 3; Pages: 764

مصطلحات موضوعية: GaN LED, linear circuit, three-phase AC power

وصف الملف: application/pdf

Relation: Semiconductor Devices; https://dx.doi.org/10.3390/electronics12030764

الاتاحة: https://doi.org/10.3390/electronics12030764

المؤلفون: Guangheng Xiao, Wujun Du, Zhiyun Wang, Guolong Chen, Lihong Zhu, Yulin Gao, Zhong Chen, Ziquan Guo, Yijun Lu

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 663-666 (2021)

مصطلحات موضوعية: GaN LED, reflective light, transient temperature, high speed camera, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9477419/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/2471d66ca92b4bb9b6c61279effbc123

المؤلفون: Nursidik Yulianto (8947373), Grandprix T. M. Kadja (10012221), Steffen Bornemann (10012224), Soniya Gahlawat (9461504), Nurhalis Majid (8947376), Kuwat Triyana (8947385), Fatwa F. Abdi (1299093), Hutomo Suryo Wasisto (8947382), Andreas Waag (1841707)

مصطلحات موضوعية: Biotechnology, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, LLO, laser scanning speed, Ultrashort Pulse Laser Lift-Off Pro., 520 nm femtosecond laser pulses, Q-switched laser sources, laser energy, GaN LED chips, GaN light-emitting diodes

Relation: https://figshare.com/articles/journal_contribution/Ultrashort_Pulse_Laser_Lift-Off_Processing_of_InGaN_GaN_Light-Emitting_Diode_Chips/13619076

الاتاحة: https://doi.org/10.1021/acsaelm.0c00913.s001

المؤلفون: Liliental-Weber, Zuzanna, Jasinski, Jacek, Zakharov, Dmitri, O'Keefe, Michael A.

مصطلحات موضوعية: GaN LED dislocation

وصف الملف: application/pdf

URL الوصول: https://escholarship.org/uc/item/6jb9p63r

المؤلفون: Fann-Wei Yang, Yu-Siang You, Shih-Wei Feng

المصدر: Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)

مصطلحات موضوعية: Time-resolved electroluminescence (TR EL), Carrier transport, Polarization effect, Nonpolar m-plane InGaN/GaN LED, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://link.springer.com/article/10.1186/s11671-017-2087-8; https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X

URL الوصول: https://doaj.org/article/10d3020652b043ccb4c100635c044a83

المؤلفون: Polyakov A. Y., Haller C., Butte R., Smirnov N. B., Alexanyan L. A., Shikoh A. S., Shchemerov I. V., Chernykh S. V., Lagov P. B., Pavlov Yu. S., Kochkova A. I., Carlin J. F., Mosca M., Grandjean N., Pearton S. J.

المساهمون: Polyakov A.Y., Haller C., Butte R., Smirnov N.B., Alexanyan L.A., Shikoh A.S., Shchemerov I.V., Chernykh S.V., Lagov P.B., Pavlov Yu.S., Kochkova A.I., Carlin J.F., Mosca M., Grandjean N., Pearton S.J.

مصطلحات موضوعية: Electroluminescence, GaN LED, radiation tolerance, superlattice, Settore FIS/03 - Fisica Della Materia, Settore ING-INF/01 - Elettronica

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000561529700001; volume:53; issue:44; firstpage:445111-1; lastpage:445111-11; numberofpages:11; journal:JOURNAL OF PHYSICS D. APPLIED PHYSICS; http://hdl.handle.net/10447/432438

الاتاحة: http://hdl.handle.net/10447/432438
https://doi.org/10.1088/1361-6463/aba6b7

المؤلفون: Bornemann, Steffen, Yulianto, Nursidik, Waag, Andreas, Wasisto, Hutomo Suryo

المصدر: Deutsche Physikalische Gesellschaft (DPG)-Frühjahrstagung 2018, Berlin, Germany, 11 – 16 March 2018

مصطلحات موضوعية: laser lift-off, GaN LED, LED, femtosecond laser

Relation: https://zenodo.org/communities/eu; https://doi.org/10.5281/zenodo.2491308; https://doi.org/10.5281/zenodo.2491309; oai:zenodo.org:2491309

الاتاحة: https://doi.org/10.5281/zenodo.2491309

المؤلفون: Gülink, Jan, Bornemann, Steffen, Strempel, Klaas, Spende, Hendrik, Fatahilah, Muhammad Fahlesa, Wasisto, Hutomo Suryo, Waag, Andreas

المصدر: IWN 2018, International Workshop on Nitride Semiconductors 2018 (),, Kanazawa, Japan, 11-16 November 2018

مصطلحات موضوعية: nanoLED, GaN LED, surface effect, nanoscale LED

Relation: https://zenodo.org/communities/eu; https://doi.org/10.5281/zenodo.2492630; https://doi.org/10.5281/zenodo.2492631; oai:zenodo.org:2492631

الاتاحة: https://doi.org/10.5281/zenodo.2492631

المؤلفون: Bornemann, Steffen, Yulianto, Nursidik, Meyer, Tobias, Gülink, Jan, Margenfeld, Christoph, Seibt, Michael, Wasisto, Hutomo Suryo, Waag, Andreas

المصدر: IWN 2018, International Workshop on Nitride Semiconductors 2018, Kanazawa, Japan, 11-16 November 2018

مصطلحات موضوعية: laser lift-off, femtosecond laser, TEM, GaN LED, InGaN

Relation: https://zenodo.org/communities/eu; https://doi.org/10.5281/zenodo.2493288; https://doi.org/10.5281/zenodo.2493289; oai:zenodo.org:2493289

الاتاحة: https://doi.org/10.5281/zenodo.2493289

المؤلفون: Wasisto, Hutomo Suryo, Gülink, Jan, Mariana, Shinta, Bornemann, Steffen, Yulianto, Nursidik, Yu, Feng, Strempel, Klaas, Fatahilah, Muhammad Fahlesa, Granz, Tony, Markiewicz, Nicolai, Bezshlyakh, Daria, Scholz, Gregor, Syamsu, Iqbal, Boht, Heidi, Hartmann, Jana, Fündling, Sönke, Witzigmann, Bernd, Prades, Joan Daniel, Strassburg, Martin, Lugauer, Hans-Jürgen, Waag, Andreas

المصدر: SPIE Photonics West 2018, Conference OE126 "Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII", San Francisco, CA, USA, 27 January - 1 February 2018

مصطلحات موضوعية: GaN LED, nanostructures, high aspect ratio, nanoLED

Relation: https://zenodo.org/communities/eu; https://doi.org/10.5281/zenodo.2493714; https://doi.org/10.5281/zenodo.2493715; oai:zenodo.org:2493715

الاتاحة: https://doi.org/10.5281/zenodo.2493715

المؤلفون: Yulianto, Nursidik, Bornemann, Steffen, Gülink, Jan, Daul, Lars, Koenders, Ludger, Waag, Andreas, Wasisto, Hutomo Suryo

المصدر: IWN 2018, International Workshop on Nitride Semiconductors 2018, Kanazawa, Japan, 11-16 November 2018

مصطلحات موضوعية: LLO, laser lift-off, femtosecond laser, GaN LED

Relation: https://zenodo.org/communities/eu; https://doi.org/10.5281/zenodo.2493032; https://doi.org/10.5281/zenodo.2493033; oai:zenodo.org:2493033

الاتاحة: https://doi.org/10.5281/zenodo.2493033

المؤلفون: Moonsang Lee, Hyunkyu Lee, Keun Man Song, Jaekyun Kim

المصدر: Nanomaterials; Volume 8; Issue 7; Pages: 543

مصطلحات موضوعية: InGaN/GaN LED, freestanding GaN, forward leakage current, conduction mechanism, tunneling

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/nano8070543

الاتاحة: https://doi.org/10.3390/nano8070543

المؤلفون: Akihiro Wakahara, Keisuke Yamane, Taisuke Suzaki, Tetsuro Kosaka, 寿崎 泰佑, 小坂 哲朗, 山根 啓輔, 若原 昭浩

المصدر: JSAP Annual Meetings Extended Abstracts. 2020, :1184

المؤلفون: Lihong Zhu, Ziquan Guo, Wujun Du, Zhong Chen, Yijun Lu, Guangheng Xiao, Zhiyun Wang, Chen Guolong, Yulin Gao

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 663-666 (2021)

مصطلحات موضوعية: high speed camera, Materials science, High-speed camera, business.industry, reflective light, Ray, Temperature measurement, Electronic, Optical and Magnetic Materials, law.invention, TK1-9971, transient temperature, Light intensity, Optics, law, Transient (oscillation), Electrical engineering. Electronics. Nuclear engineering, Electrical and Electronic Engineering, GaN LED, business, Image resolution, Order of magnitude, Biotechnology, Light-emitting diode

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38c9e1ce20f1635c44ff5336e6a4c423
https://ieeexplore.ieee.org/document/9477419/

المؤلفون: Nicola Renso, Enrico Zanoni, Andrea Neviani, Matteo Buffolo, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini

مصطلحات موضوعية: Materials science, business.industry, InGaN/GaN LED, electroluminescence, trap-assisted tunneling, Shockley–Read–Hall recombination, General Engineering, General Physics and Astronomy, InGaN/GaN LED, Gallium nitride, Electroluminescence, law.invention, electroluminescence, chemistry.chemical_compound, chemistry, law, Optoelectronics, Current (fluid), business, Recombination, Quantum tunnelling, trap-assisted tunneling, Light-emitting diode, Shockley–Read–Hall recombination

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e09706d75b41153cecb1c90fe47ac76f
http://hdl.handle.net/11577/3297174