المؤلفون: Paul R. Genssler, Florian Klemme, Shivendra Singh Parihar, Sebastian Brandhofer, Girish Pahwa, Ilia Polian, Yogesh Singh Chauhan, Hussam Amrouch

المصدر: IEEE Transactions on Quantum Engineering, Vol 4, Pp 1-11 (2023)

مصطلحات موضوعية: Cryogenic CMOS, 5-nm fin-shaped field-effect transistor (FinFET), hyperdimensional computing, machine learning classification, quantum computing, system on chip (SoC), Atomic physics. Constitution and properties of matter, QC170-197, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10198843/; https://doaj.org/toc/2689-1808

URL الوصول: https://doaj.org/article/8531733d2f0b4b4894729acba5073515

المؤلفون: Chankeun Yoon, Seungjun Moon, Changhwan Shin

المصدر: Nano Convergence, Vol 7, Iss 1, Pp 1-7 (2020)

مصطلحات موضوعية: Hysteresis, Fully-depleted silicon-on-insulator (FDSOI) device, Fin-shaped field-effect-transistor (FinFET), Ferroelectric capacitor, Technology, Chemical technology, TP1-1185, Biotechnology, TP248.13-248.65, Science, Physics, QC1-999

وصف الملف: electronic resource

Relation: http://link.springer.com/article/10.1186/s40580-020-00230-x; https://doaj.org/toc/2196-5404

URL الوصول: https://doaj.org/article/70fc07b13bef42edbb601fc66dedfd90

المؤلفون: Erdin Ture, Peter Bruckner, Birte-Julia Godejohann, Rolf Aidam, Mohamed Alsharef, Ralf Granzner, Frank Schwierz, Rudiger Quay, Oliver Ambacher

المصدر: IEEE Journal of the Electron Devices Society, Vol 4, Iss 1, Pp 1-6 (2016)

مصطلحات موضوعية: High-electron mobility transistor (HEMT), fin-shaped field-effect transistor (FinFET), Gallium nitride, short channel, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/7337366/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/0bfbf3a76e014c1997607dcc0c39d50d

المؤلفون: Seungjun Moon, Changhwan Shin, Chankeun Yoon

المصدر: Nano Convergence
Nano Convergence, Vol 7, Iss 1, Pp 1-7 (2020)

مصطلحات موضوعية: Materials science, lcsh:Biotechnology, Fin-shaped field-effect-transistor (FinFET), Silicon on insulator, 02 engineering and technology, Fully-depleted silicon-on-insulator (FDSOI) device, lcsh:Chemical technology, lcsh:Technology, 01 natural sciences, Ferroelectric capacitor, law.invention, law, lcsh:TP248.13-248.65, 0103 physical sciences, MOSFET, lcsh:TP1-1185, General Materials Science, lcsh:Science, 010302 applied physics, Full Paper, lcsh:T, business.industry, Hysteresis, Transistor, General Engineering, Window (computing), 021001 nanoscience & nanotechnology, lcsh:QC1-999, Electrode, Optoelectronics, lcsh:Q, 0210 nano-technology, business, lcsh:Physics

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51988385a85530a387b8fa03b39aad8a
https://pubmed.ncbi.nlm.nih.gov/32483648

المؤلفون: Yue Xu, Jung-Hee Lee, Ki-Sik Im, Maryline Bawedin, Sorin Cristoloveanu

المساهمون: Nanjing University of Posts and Telecommunications [Nanjing] (NJUPT), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Kyungpook National University [Daegu]

المصدر: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (3), pp.915-920. ⟨10.1109/TED.2017.2788920⟩

مصطلحات موضوعية: Materials science, Transconductance, subthreshold swing (SS), Gallium nitride, 2-D electron gas (2DEG), 02 engineering and technology, 01 natural sciences, law.invention, chemistry.chemical_compound, law, 0103 physical sciences, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, business.industry, AlGaN/GaN fin-shaped field-effect transistor (FinFET), fully depleted, Transistor, Wide-bandgap semiconductor, Swing, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Threshold voltage, chemistry, Logic gate, Optoelectronics, 0210 nano-technology, business, Fermi gas

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d32e88ae6d6a5062fe24501ef1f5e124
https://hal.archives-ouvertes.fr/hal-02006999

المؤلفون: Oliver Ambacher, Peter Brückner, Ralf Granzner, Mohamed Alsharef, Birte-Julia Godejohann, Rudiger Quay, Rolf Aidam, Erdin Ture, Frank Schwierz

المساهمون: Publica

المصدر: IEEE Journal of the Electron Devices Society, Vol 4, Iss 1, Pp 1-6 (2016)

مصطلحات موضوعية: Materials science, Transconductance, Binary number, Topology (electrical circuits), Gallium nitride, 02 engineering and technology, High-electron mobility transistor (HEMT), 01 natural sciences, law.invention, chemistry.chemical_compound, law, 0103 physical sciences, High current, Electrical and Electronic Engineering, short channel, 010302 applied physics, business.industry, Transistor, Wide-bandgap semiconductor, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, chemistry, Logic gate, high electron mobility transistor (HEMT), Optoelectronics, lcsh:Electrical engineering. Electronics. Nuclear engineering, fin-shaped field-effect transistor (FinFET), 0210 nano-technology, business, lcsh:TK1-9971, Biotechnology

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::24df084764533823a7297bb318b18b9d
https://doi.org/10.1109/jeds.2015.2503701

المؤلفون: Xu, Yue, Cristoloveanu, Sorin, Bawedin, Maryline, Im, Ki-Sik, Lee, Jung-Hee

المساهمون: Nanjing University of Posts and Telecommunications Nanjing (NJUPT), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 ), Kyungpook National University Daegu (KNU)

المصدر: ISSN: 0018-9383 ; IEEE Transactions on Electron Devices ; https://hal.science/hal-02006999 ; IEEE Transactions on Electron Devices, 2018, 65 (3), pp.915-920. ⟨10.1109/TED.2017.2788920⟩.

مصطلحات موضوعية: 2-D electron gas (2DEG), AlGaN/GaN fin-shaped field-effect transistor (FinFET), fully depleted, subthreshold swing (SS), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

الاتاحة: https://hal.science/hal-02006999
https://doi.org/10.1109/TED.2017.2788920

المؤلفون: V. Ramgopal Rao, Mayank Shrivastava, Maryam Shojaei Baghini, Dinesh K. Sharma

المصدر: IEEE Transactions on Electron Devices. 57:1287-1294

مصطلحات موضوعية: Engineering, Design, Spacer, Gate, Silicon on insulator, Short-Channel Performance, Hardware_PERFORMANCEANDRELIABILITY, Integrated circuit, law.invention, law, MOSFET, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Bulk Fin-Shaped Field-Effect Transistor (Finfet), Self-Heating, Electrical and Electronic Engineering, Electronic circuit, Width Quantization, business.industry, Dissipation, Electrothermal, Electronic, Optical and Magnetic Materials, CMOS, Logic gate, Field-effect transistor, Bulk Finfets, business, Fin-Shaped Field-Effect Transistor (Finfet)

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3544c9550e3493cafbfd0c9c8582082
https://doi.org/10.1109/ted.2010.2045686

المؤلفون: Ture, E., Brueckner, P., Quay, Rüdiger, Ambacher, O., Alsharef, M., Granzner, R., Schwierz, F.

مصطلحات موضوعية: Enhancement mode (E-mode), fin-shaped field-effect transistor (FinFET), gallium nitride, high-electron mobility transistor (HEMT)

Relation: European Microwave Integrated Circuits Conference (EuMIC) 2016; European Microwave Week (EuMW) 2016; 11th European Microwave Integrated Circuits Conference, EuMIC 2016. Proceedings; https://publica.fraunhofer.de/handle/publica/393853

الاتاحة: https://publica.fraunhofer.de/handle/publica/393853

المؤلفون: Young-Ho Bae, Sorin Cristoloveanu, Christoforos G. Theodorou, Jung-Hee Lee, Gerard Ghibaudo, Sindhuri Vodapally, Ki-Sik Im

المساهمون: Kyungpook National University [Daegu], Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Uiduk university, Gyeongju

المصدر: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2017, 64 (9), pp.3634-3638. ⟨10.1109/TED.2017.2730919⟩

مصطلحات موضوعية: Materials science, G-R noise, 2-D electron gas (2-DEG), Transconductance, Gallium nitride, 02 engineering and technology, 01 natural sciences, Noise (electronics), law.invention, chemistry.chemical_compound, AlGaN/GaN, law, 0103 physical sciences, Wafer, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, Condensed matter physics, business.industry, Transistor, Wide-bandgap semiconductor, Electrical engineering, Heterojunction, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, chemistry, 1/fnoise, fin-shaped field-effect transistor (FinFET), 0210 nano-technology, Fermi gas, business, metal-insulator-semiconductor heterostructure field-effect-transistor (MISHFET)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6864ab167367a0b75903288d4f677c19
https://hal.archives-ouvertes.fr/hal-02006996

المؤلفون: Vodapally, Sindhuri, Theodorou, Christoforos, Bae, Youngho, Ghibaudo, Gérard, Cristoloveanu, Sorin, Im, Ki-Sik, Lee, Jung-Hee

المساهمون: Kyungpook National University Daegu (KNU), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 ), Uiduk university, Gyeongju

المصدر: ISSN: 0018-9383 ; IEEE Transactions on Electron Devices ; https://hal.science/hal-02006996 ; IEEE Transactions on Electron Devices, 2017, 64 (9), pp.3634-3638. ⟨10.1109/TED.2017.2730919⟩.

مصطلحات موضوعية: 1/fnoise, 2-D electron gas (2-DEG), AlGaN/GaN, fin-shaped field-effect transistor (FinFET), G-R noise, metal-insulator-semiconductor heterostructure field-effect-transistor (MISHFET), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

الاتاحة: https://hal.science/hal-02006996
https://doi.org/10.1109/TED.2017.2730919

المؤلفون: Rodriguez, Raul, Gonzalez, Benito, Garcia, Javier, Nunez, Antonio, Yigletu, Fetene Mulugeta, Iniguez, Benjamin, Tirado, Jose Maria

المساهمون: 7401544516, 56082155300, 8383160900, 7103279517, 55576276800, 55148428400, 8653120400, 9099157, 1092737, 29725521, 2351908, 3058706, 91160, 4353013, WOS:Rodriguez, R, WOS:Gonzalez, B, WOS:Garcia, J, WOS:Nunez, A, WOS:Yigletu, FM, WOS:Iniguez, B, WOS:Tirado, JM, BU-TEL

المصدر: Proceedings Of The 2015 10Th Spanish Conference On Electron Devices (Cde)[ISSN 2163-4971], p. 34-+, (2015)

مصطلحات موضوعية: 330790 Microelectrónica, Fin-shaped field-effect transistor (FinFET), Self-heating effects (SSE), Thermal resistance, Compact modelling

Relation: Spanish Conference on Electron Devices; 10th Spanish Conference on Electron Devices, CDE 2015; WoS; http://hdl.handle.net/10553/46913; 84929340229; 000380443300010; 7087452; events121545; Sí

الاتاحة: http://hdl.handle.net/10553/46913
https://doi.org/10.1109/CDE.2015.7087452

المؤلفون: Dong-Gi Lee, Hee-Sung Kang, Sorin Cristoloveanu, Jung-Hee Lee, V. Sindhuri, Young-Woo Jo, Ki-Sik Im, Jae-Hong Lee, Dong-Hyeok Son, Jae-Hoon Lee

المساهمون: Kyungpook National University [Daegu], Samsung Electronics [Korea], Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

المصدر: Journal of Nanoscience and Nanotechnology
Journal of Nanoscience and Nanotechnology, American Scientific Publishers, 2016, 16 (5), pp.5049-5052. ⟨10.1166/jnn.2016.12259⟩

مصطلحات موضوعية: Fin-Shaped Field-Effect Transistor (FinFET), Materials science, Sidewall, Biomedical Engineering, Nanowire, Bioengineering, Algan gan, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Omega, Fin (extended surface), AlGaN/GaN, 0103 physical sciences, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Drain current, 010302 applied physics, business.industry, Omega-Shaped-Gate, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Improved performance, 2-Dimensional Electron Gas (2DEG), Optoelectronics, Field-effect transistor, Heterojunction, 0210 nano-technology, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9e065a794f4bbfa9b4917ad98a9ea52
https://hal.archives-ouvertes.fr/hal-02006982

المؤلفون: Lee, Dong-Gi, Sindhuri, V., Jo, Young-Woo, Son, Dong-Hyeok, Kang, Hee-Sung, Lee, Jae-Hong, Lee, Jae-Hoon, Cristoloveanu, Sorin, Im, Ki-Sik, Lee, Jung-Hee

المساهمون: Kyungpook National University Daegu (KNU), Samsung Electronics Korea, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 )

المصدر: ISSN: 1533-4880 ; Journal of Nanoscience and Nanotechnology ; https://hal.science/hal-02006982 ; Journal of Nanoscience and Nanotechnology, 2016, 16 (5), pp.5049-5052. ⟨10.1166/jnn.2016.12259⟩.

مصطلحات موضوعية: 2-Dimensional Electron Gas (2DEG), AlGaN/GaN, Fin-Shaped Field-Effect Transistor (FinFET), Heterojunction, Omega-Shaped-Gate, Sidewall, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

الاتاحة: https://hal.science/hal-02006982
https://doi.org/10.1166/jnn.2016.12259

المؤلفون: SHRIVASTAVA, M, BAGHINI, MS, SHARMA, DK, RAO, VR

مصطلحات موضوعية: Bulk Finfets, Gate, Design, Bulk Fin-Shaped Field-Effect Transistor (Finfet), Electrothermal, Fin-Shaped Field-Effect Transistor (Finfet), Self-Heating, Short-Channel Performance, Spacer, Width Quantization

وصف الملف: application/pdf

Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES, 57(6), 1287-1294; http://dx.doi.org/10.1109/TED.2010.2045686; http://dspace.library.iitb.ac.in/xmlui/handle/10054/8193; http://hdl.handle.net/10054/8193

الاتاحة: http://dspace.library.iitb.ac.in/xmlui/handle/10054/8193
https://doi.org/10.1109/TED.2010.2045686
http://hdl.handle.net/10054/8193

المؤلفون: González, B., Roldán, J. B., Iñiguez, B., Lázaro, A., Cerdeira, A.

المساهمون: Gonzalez, Benito, Roldan Aranda, Juan Bautista, 56082155300, 7006608138, 55148428400, 56036357200, 7003780995, 1092737, 294988, 91160, 56325, 137230, WOS:Gonzalez, B, WOS:Roldan, JB, WOS:Iniguez, B, WOS:Lazaro, A, WOS:Cerdeira, A, BU-TEL

المصدر: Microelectronics Journal[ISSN 0026-2692],v. 46, p. 320-326

مصطلحات موضوعية: 3307 Tecnología electrónica, Fin-shaped field-effect transistor (FinFET), Self-heating effects (SSE), Thermal resistance, Compact modelling

Relation: Microelectronics; 46; http://hdl.handle.net/10553/46912; 84924153108; 000353081200007; WOS:000353081200007; H-6803-2015; C-6844-2012; Sí

الاتاحة: http://hdl.handle.net/10553/46912
https://doi.org/10.1016/j.mejo.2015.02.003

المؤلفون: Han, Ming-Hung, Chang, Chun-Yen, Chen, Hung-Bin, Wu, Jia-Jiun, Cheng, Ya-Chi, Wu, Yung-Chun

المساهمون: 電子工程學系及電子研究所, Department of Electronics Engineering and Institute of Electronics

مصطلحات موضوعية: Fin-shaped field-effect transistor (FinFET), junctionless (JL), 3-D simulation

Relation: http://dx.doi.org/10.1109/LED.2012.2231395; http://hdl.handle.net/11536/21020; IEEE ELECTRON DEVICE LETTERS

الاتاحة: http://hdl.handle.net/11536/21020
https://doi.org/10.1109/LED.2012.2231395

المؤلفون: Fan, Ming-Long, Wu, Yu-Sheng, Hu, Vita Pi-Ho, Hsieh, Chien-Yu, Su, Pin, Chuang, Ching-Te

المساهمون: 電子工程學系及電子研究所, Department of Electronics Engineering and Institute of Electronics

مصطلحات موضوعية: Fin-shaped field-effect transistor (FinFET), static noise margin (SNM), subthreshold static random access memory (SRAM), variability

Relation: http://dx.doi.org/10.1109/TED.2010.2096225; http://hdl.handle.net/11536/9242; IEEE TRANSACTIONS ON ELECTRON DEVICES

الاتاحة: http://hdl.handle.net/11536/9242
https://doi.org/10.1109/TED.2010.2096225

المؤلفون: Wu, Yu-Sheng, Su, Pin

المساهمون: 電子工程學系及電子研究所, Department of Electronics Engineering and Institute of Electronics

مصطلحات موضوعية: Fin-shaped field-effect transistor (FinFET), quantum effects, surface orientation, variation

Relation: http://dx.doi.org/10.1109/TED.2010.2080682; http://hdl.handle.net/11536/26298; IEEE TRANSACTIONS ON ELECTRON DEVICES

الاتاحة: http://hdl.handle.net/11536/26298
https://doi.org/10.1109/TED.2010.2080682

المؤلفون: BARAVELLI, EMANUELE, DE MARCHI, LUCA, SPECIALE, NICOLO'ATTILIO

المساهمون: E. Baravelli, L. De Marchi, N. Speciale

مصطلحات موضوعية: FIN-SHAPED FIELD EFFECT TRANSISTOR (FINFET), LINE-EDGE ROUGHNESS, DEVICE SIMULATION, ENSEMBLE MONTE CARLO, SENSITIVITY ANALYSIS

وصف الملف: STAMPA

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000272910200015; volume:53; firstpage:1303; lastpage:1312; numberofpages:10; journal:SOLID-STATE ELECTRONICS; http://hdl.handle.net/11585/86429; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-71649100836

الاتاحة: http://hdl.handle.net/11585/86429
https://doi.org/10.1016/j.sse.2009.09.015