المؤلفون: Roopesh Singh, Shivam Verma

المصدر: IEEE Open Journal of Nanotechnology, Vol 6, Pp 27-34 (2025)

مصطلحات موضوعية: Fin field effect transistor (FinFET), ferroelectric field effect transistor (FeFET), magnetic tunnel junction (MTJ), junctionless-accumulation-mode (JAM), ferroelectric random-access memory (FeRAM), spin transfer torque (STT), Chemical technology, TP1-1185, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10845186/; https://doaj.org/toc/2644-1292

URL الوصول: https://doaj.org/article/d1addcab1886427f9660354310aeeb09

المؤلفون: Shivendra Singh Parihar, Girish Pahwa, Baker Mohammad, Yogesh Singh Chauhan, Hussam Amrouch

المصدر: IEEE Transactions on Quantum Engineering, Vol 6, Pp 1-15 (2025)

مصطلحات موضوعية: 5 nm fin field-effect transistor (FinFET), cryogenic complementary metal–oxide–semiconductor (CMOS), low-power design, memory optimization, static random access memory (SRAM), Atomic physics. Constitution and properties of matter, QC170-197, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10778409/; https://doaj.org/toc/2689-1808

URL الوصول: https://doaj.org/article/1bc90249ebf9453b998eeb974d52f761

المؤلفون: Bhau, Parthiv, Savani, Vijay

المصدر: Nirma University Journal of Engineering and Technology; Vol. 2 No. 2 (2024): Nirma University Journal of Engineering and Technology; 1-11 ; 2231-2870 ; 10.5281/

مصطلحات موضوعية: Fin Field Effect Transistor (FinFET), Multiply and Accumulate Unit (MAC), Ripple Carry Adder (RCA), Vedic Signed Multiplier (VSM), Transmission Gate (TG), Transmission Gate Adder (TGA), Power-Delay-Product (PDP)

وصف الملف: application/pdf

Relation: https://journals.nirmauni.ac.in/index.php/technology/article/view/205/93; https://journals.nirmauni.ac.in/index.php/technology/article/view/205

الاتاحة: https://journals.nirmauni.ac.in/index.php/technology/article/view/205

المؤلفون: Arsen Ahmed Mohammed, Zaidoon Khalaf Mahmood, Hüseyin Demirel

المصدر: Global Journal of Engineering and Technology Advances, 18(2), 001–005, (2024-02-28)

مصطلحات موضوعية: ZC-CDTA, Locust beans, FinFET (Fin Field-Effect Transistor), Cadence tools, Low-power

Relation: https://zenodo.org/communities/gjeta; https://doi.org/10.5281/zenodo.10947231; https://doi.org/10.5281/zenodo.10947232; oai:zenodo.org:10947232; https://doi.org/10.30574/gjeta.2024.18.2.0019

الاتاحة: https://doi.org/10.5281/zenodo.10947232
https://doi.org/10.30574/gjeta.2024.18.2.0019

المؤلفون: Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang

المصدر: Advanced Intelligent Systems, Vol 5, Iss 11, Pp n/a-n/a (2023)

مصطلحات موضوعية: charge trapping, compact artificial synapse, ferroelectric fin field-effect transistor (FinFET), long-term plasticity, polarization switching, reservoir computing, Computer engineering. Computer hardware, TK7885-7895, Control engineering systems. Automatic machinery (General), TJ212-225

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2640-4567

URL الوصول: https://doaj.org/article/49aba2ff74004ff7a5634dd3fc913dcf

المؤلفون: Lida Kouhalvandi, Eva Catoggio, Simona Donati Guerrieri

المساهمون: Kouhalvandi, Lida, Catoggio, Eva, DONATI GUERRIERI, Simona

مصطلحات موضوعية: Deep neural network (DNN), fin field-effect transistor (FinFET), long short-term memory (LSTM), large-signal modeling, predict, X-parameter

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/isbn/978-1-6654-6397-3; ispartofbook:IEEE International Conference on Smart Technologies; IEEE EUROCON 2023 - 20th International Conference on Smart Technologies; firstpage:542; lastpage:546; numberofpages:5; https://hdl.handle.net/11583/2981381; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85168698093; https://ieeexplore-ieee-org.ezproxy.biblio.polito.it/document/10198982

الاتاحة: https://hdl.handle.net/11583/2981381
https://doi.org/10.1109/EUROCON56442.2023.10198982
https://ieeexplore-ieee-org.ezproxy.biblio.polito.it/document/10198982

المؤلفون: Autran, Jean-Luc, Munteanu, Daniela

المساهمون: Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

المصدر: ISSN: 0018-9499.

مصطلحات موضوعية: CMOS technologies, collection–diffusion, criti- cal charge, fin field-effect transistor (FinFET), numerical simula- tion, planar transistor, radiation effects, single event effects, soft error rate (SER), static random access memory (SRAM), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

Relation: hal-04059844; https://amu.hal.science/hal-04059844; https://amu.hal.science/hal-04059844/document; https://amu.hal.science/hal-04059844/file/TNS_Autran_Munteanu_2023_HAL.pdf

الاتاحة: https://amu.hal.science/hal-04059844
https://amu.hal.science/hal-04059844/document
https://amu.hal.science/hal-04059844/file/TNS_Autran_Munteanu_2023_HAL.pdf
https://doi.org/10.1109/TNS.2023.3263106

المؤلفون: Chavez, Fredo, Tung, Chien-Ting, Kao, Ming-Yen, Hu, Chenming, Chen, Jen-Hao, Khandelwal, Sourabh

المصدر: Chavez , F , Tung , C-T , Kao , M-Y , Hu , C , Chen , J-H & Khandelwal , S 2023 , ' Deep learning-based I-V global parameter extraction for BSIM-CMG ' , Solid-State Electronics , vol. 209 , 108766 , pp. 1-5 . https://doi.org/10.1016/j.sse.2023.108766

مصطلحات موضوعية: Parameter extraction, Berkeley Short-channel IGFET Model–Common Multi-Gate (BSIM-CMG), Fin field-effect transistor (FinFET), Deep learning

وصف الملف: application/pdf

الاتاحة: https://researchers.mq.edu.au/en/publications/6de8b220-0f8f-464f-851e-9774ff7cd40b
https://doi.org/10.1016/j.sse.2023.108766
https://research-management.mq.edu.au/ws/files/299387158/297638313.pdf
http://www.scopus.com/inward/record.url?scp=85171325943&partnerID=8YFLogxK

المؤلفون: Minji Bang, Jonghyeon Ha, Gyeongyeop Lee, Minki Suh, Jungsik Kim

المصدر: Micromachines; Volume 14; Issue 5; Pages: 1090

مصطلحات موضوعية: displacement defect, fin field-effect-transistor, cosmic rays, terrestrial radiation, technology computer-aided design (TCAD)

وصف الملف: application/pdf

Relation: A：Physics; https://dx.doi.org/10.3390/mi14051090

الاتاحة: https://doi.org/10.3390/mi14051090

المؤلفون: Katikala Hima Bindu, Kumar Kommuri Manoj, Malapati Loshalika Reddy, Bodduluri Venkata Greeshmanth, Krishna Gopal, Ramesh G., Kaur Namita, Kumar L. Raghu

المصدر: E3S Web of Conferences, Vol 430, p 01189 (2023)

مصطلحات موضوعية: cochlear implant (ci), fin field effect transistor (finfet), electrode array, back telemetry, Environmental sciences, GE1-350

Relation: https://www.e3s-conferences.org/articles/e3sconf/pdf/2023/67/e3sconf_icmpc2023_01189.pdf; https://doaj.org/toc/2267-1242; https://doaj.org/article/304732e818ef4f81a0805a571bdf9ed0

الاتاحة: https://doi.org/10.1051/e3sconf/202343001189
https://doaj.org/article/304732e818ef4f81a0805a571bdf9ed0

المؤلفون: Vasudeva Gowdagere, Uma Bidikinamane Venkataramanaiah

المصدر: International Journal of Electrical and Computer Engineering (IJECE), 12(2), 2158-2168, (2022-04-01)

مصطلحات موضوعية: Comparator, Fin field-effect transistor, High frequency, Layout design, Operational transconductance amplifier, Rail-to-rail

Relation: oai:zenodo.org:6775578

الاتاحة: https://doi.org/10.11591/ijece.v12i2.pp2158-2168

المؤلفون: Haoji Wan, Xianyun Liu, Xin Su, Xincheng Ren, Shengting Luo, Qi Zhou

المصدر: Applied Sciences; Volume 12; Issue 21; Pages: 11279

مصطلحات موضوعية: multi-enhanced operation gate fin field-effect transistor (MEOG FinFET), silicon-on-insulator (SOI), operation in various states, independent gates

جغرافية الموضوع: agris

وصف الملف: application/pdf

Relation: Electrical, Electronics and Communications Engineering; https://dx.doi.org/10.3390/app122111279

الاتاحة: https://doi.org/10.3390/app122111279

المؤلفون: Gribisch, Philipp, Carrascon, Rosalia Delgado, Darakchieva, Vanya, Lind, Erik

المصدر: IEEE Transactions on Electron Devices NanoLund: Centre for Nanoscience. 70(5):2408-2414

مصطلحات موضوعية: Fin field effect transistor (FinFET), gallium nitride (GaN), quasi-vertical, silicon carbide (SiC), Teknik, Elektroteknik och elektronik, Annan elektroteknik och elektronik, Engineering and Technology, Electrical Engineering, Electronic Engineering, Information Engineering, Other Electrical Engineering

URL الوصول: https://lup.lub.lu.se/record/07b76331-f659-45cb-8e65-af7cfc784e82
http://dx.doi.org/10.1109/TED.2023.3263154

المؤلفون: Chen, Jen-Hao, Chavez, Fredo, Tung, Chien-Ting, Khandelwal, Sourabh, Hu, Chenming

المصدر: Chen , J-H , Chavez , F , Tung , C-T , Khandelwal , S & Hu , C 2024 , ' A single neural network global I-V and C-V parameter extractor for BSIM-CMG compact model ' , Solid-State Electronics , vol. 216 , 108898 , pp. 1-7 . https://doi.org/10.1016/j.sse.2024.108898

مصطلحات موضوعية: Berkeley Short-channel IGFET Model – Common Multi-Gate (BSIM-CMG), Deep learning, Fin field effect transistor (FinFET), Compact model, Parameter extraction

الاتاحة: https://researchers.mq.edu.au/en/publications/863bdd87-f9d2-420b-b8cb-723ff0115ecb
https://doi.org/10.1016/j.sse.2024.108898
http://www.scopus.com/inward/record.url?scp=85188613531&partnerID=8YFLogxK

المؤلفون: Jean-Luc Autran, Daniela Munteanu

المساهمون: Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

المصدر: IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, 2023, 70 (5), pp.782-791. ⟨10.1109/TNS.2023.3263106⟩

مصطلحات موضوعية: static random access memory (SRAM), Nuclear and High Energy Physics, soft error rate (SER), fin field-effect transistor (FinFET), collection–diffusion, criti- cal charge, single event effects, CMOS technologies, planar transistor, numerical simula- tion, Nuclear Energy and Engineering, radiation effects, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9cbeb2a1c2a2533a82552028a61729e2
https://doi.org/10.1109/tns.2023.3263106

المؤلفون: Sang-Kon Kim

المصدر: Micromachines; Volume 12; Issue 12; Pages: 1493

مصطلحات موضوعية: lithography, lithography simulation, extreme ultraviolet, EUV, line-edge roughness, LER, stochastic simulation, fin-field-effect-transistor, FinFET

وصف الملف: application/pdf

Relation: B：Biology and Biomedicine; https://dx.doi.org/10.3390/mi12121493

الاتاحة: https://doi.org/10.3390/mi12121493

المؤلفون: Youngbae Kim, Shreyash Patel, Heekyung Kim, Nandakishor Yadav, Kyuwon Ken Choi

المصدر: Electronics; Volume 10; Issue 3; Pages: 256

مصطلحات موضوعية: CNFET (Carbon Nanotube Filed Effect Transistor), FinFET (Fin Field Effect Transistor), read SNM free, low power SRAM, 8-T SRAM, CNFET SRAM, FinFET SRAM

وصف الملف: application/pdf

Relation: Electrical and Autonomous Vehicles; https://dx.doi.org/10.3390/electronics10030256

الاتاحة: https://doi.org/10.3390/electronics10030256

المؤلفون: Jinsu Park, Jaemin Kim, Sanchari Showdhury, Changhwan Shin, Hwasung Rhee, Myung Soo Yeo, Eun-Chel Cho, Junsin Yi

المصدر: Electronics; Volume 9; Issue 8; Pages: 1283

مصطلحات موضوعية: metal-oxide-semiconductor field-effect transistor, fin field-effect transistor, short-channel effects, drain-induced barrier lowering, self-heating effect

وصف الملف: application/pdf

Relation: Semiconductor Devices; https://dx.doi.org/10.3390/electronics9081283

الاتاحة: https://doi.org/10.3390/electronics9081283

المؤلفون: Shaik, Dilshad, Gollapudi, Sai Krishna Santhosh

المصدر: International Journal of Intelligent Systems and Applications in Engineering; Vol. 11 No. 2s (2023); 76-80

مصطلحات موضوعية: Full Adder, Power, CMOS, Performance analysis, Fin-Field Effect Transistor, Gate-Diffusion input

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=issn21476799::37a93348aa09fbbbe92f8b1721c3025c
https://www.ijisae.org/index.php/IJISAE/article/view/2510

المؤلفون: Xaver Klemenschits, Siegfried Selberherr, Lado Filipovic

المصدر: Micromachines; Volume 9; Issue 12; Pages: 631

مصطلحات موضوعية: technology computer-aided design (TCAD), metal oxide semiconductor field effect transistor (MOSFET), topography simulation, metal gate stack, level set, high-k, fin field effect transistor (FinFET)

وصف الملف: application/pdf

Relation: A：Physics; https://dx.doi.org/10.3390/mi9120631

الاتاحة: https://doi.org/10.3390/mi9120631