المؤلفون: Arya Lekshmi Jagath, Chee Hock Leong, T. Nandha Kumar, HaiderA.F. Almurib

المصدر: The Journal of Engineering (2019)

مصطلحات موضوعية: resistive RAM, electrical resistivity, electrical conductivity transitions, integrated circuit modelling, oxidation, reduction (chemical), physics-based RRAM models, compact models, oxide-based RRAM devices, electrical parameters, thermal parameters, drift diffusion, redox, electric field, conductive filament, current conduction mechanisms, resistive switching, filament radius, generalised hopping mechanisms, Schottky hopping mechanisms, conductive filament geometry, 3D models, 2D models, resistive switching behaviour, Engineering (General). Civil engineering (General), TA1-2040

وصف الملف: electronic resource

Relation: https://digital-library.theiet.org/content/journals/10.1049/joe.2018.5234; https://doaj.org/toc/2051-3305

URL الوصول: https://doaj.org/article/848f6f444b8e48c68d40e03e91806881