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1Academic Journal
المؤلفون: Jaewook Yoo, Hyeonjun Song, Hongseung Lee, Seongbin Lim, Soyeon Kim, Keun Heo, Hagyoul Bae
المصدر: Electronics; Volume 12; Issue 10; Pages: 2297
مصطلحات موضوعية: HZO, ferroelectric memory device, NVM, in-memory computing, neuromorphic, FTJ, Fe-diode, FeFET, FeRAM
وصف الملف: application/pdf
Relation: Semiconductor Devices; https://dx.doi.org/10.3390/electronics12102297
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2Academic Journal
المؤلفون: Jaewook Yoo, Hyeonjun Song, Hongseung Lee, Seongbin Lim, Soyeon Kim, Keun Heo, Hagyoul Bae
المصدر: Electronics, Vol 12, Iss 10, p 2297 (2023)
مصطلحات موضوعية: HZO, ferroelectric memory device, NVM, in-memory computing, neuromorphic, FTJ, Electronics, TK7800-8360
Relation: https://www.mdpi.com/2079-9292/12/10/2297; https://doaj.org/toc/2079-9292; https://doaj.org/article/7980623f931c4a948ec88dc9a9020e52
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3Academic Journal
المؤلفون: Yanchang Zhou, Ruiqing Cheng, Hao Wang, Baoxing Zhai, Lei Yin, Yao Wen, Yawei Lv, Jun He
مصطلحات موضوعية: Biophysics, Medicine, Microbiology, Cell Biology, Biotechnology, Immunology, Infectious Diseases, Virology, Space Science, Biological Sciences not elsewhere classified, Physical Sciences not elsewhere classified, transmission electron microscopy, showing great promise, range polar order, piezoresponse force microscopy, high transition temperature, switchable ferroelectric domains, ferroelectric memory device, generation memory electronics, thick ferroelectric cucrs, nanosheets ferroelectric two, synthesized 2d cucrs, 2 sup, 2 sub, ferroelectric switching, harmonic generation, generation devices, r <, 2d cucrs, ∼ 10
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4Academic Journal
المؤلفون: Yanchang Zhou, Ruiqing Cheng, Hao Wang, Baoxing Zhai, Lei Yin, Yao Wen, Yawei Lv, Jun He
مصطلحات موضوعية: Biophysics, Medicine, Microbiology, Cell Biology, Biotechnology, Immunology, Infectious Diseases, Virology, Space Science, Biological Sciences not elsewhere classified, Physical Sciences not elsewhere classified, transmission electron microscopy, showing great promise, range polar order, piezoresponse force microscopy, high transition temperature, switchable ferroelectric domains, ferroelectric memory device, generation memory electronics, thick ferroelectric cucrs, nanosheets ferroelectric two, synthesized 2d cucrs, 2 sup, 2 sub, ferroelectric switching, harmonic generation, generation devices, r <, 2d cucrs, ∼ 10
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5Report
المؤلفون: 孫澄源
مصطلحات موضوعية: 鐵電記憶元件, 製造, 記憶元件, Ferroelectric memory device, Fabrication, Memory device
وصف الملف: application/pdf; 6823080 bytes
Relation: http://ir.lib.ntust.edu.tw/handle/987654321/2670; http://ir.lib.ntust.edu.tw/bitstream/987654321/2670/1/NSC88-CPC-E011-015.pdf