المؤلفون: Aroop K. Behera (11403389), Charles Thomas Harris (6594371), Douglas V. Pete (3915605), Collin J. Delker (3694765), Per Erik Vullum (1452517), Marta B. Muniz (11403392), Ozhan Koybasi (11403395), Takashi Taniguchi (331592), Kenji Watanabe (75040), Branson D. Belle (9515100), Suprem R. Das (1477630)

مصطلحات موضوعية: Medicine, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Information Systems not elsewhere classified, reduced contact resistance, hexagonal boron nitride, dimensional heterostructure field, atomically thin channels, enhanced carrier mobility, dimensional electrical contacts, dependent transport behavior, dimensional edge contacts, demonstrate ultralow noise, electrical transport, surface contacts, mobility hfet, edge contacts, dependent study, ballistic transport, noise two, noise graphene, noise characteristics, frequency noise, ≈ 10, study provides, single atomic, modeling based, hooge parameter, extremely limited

Relation: https://figshare.com/articles/journal_contribution/High-Performance_and_Ultralow-Noise_Two-Dimensional_Heterostructure_Field-Effect_Transistors_with_One-Dimensional_Electrical_Contacts/16583672

الاتاحة: https://doi.org/10.1021/acsaelm.1c00595.s001