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1Academic Journal
المؤلفون: Gideon Alexander
المساهمون: The Pennsylvania State University CiteSeerX Archives
مصطلحات موضوعية: e + e − annihilation, Bose-Einstein correlation, Emitter size, Hadron sources 1
وصف الملف: application/pdf
Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.346.4954; http://arxiv.org/pdf/hep-ph/0402182v2.pdf
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2
المصدر: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015. :958-961
مصطلحات موضوعية: Bipolar junction transistor (BJT), Current density, Current gain, Implantation free, On-resistance, Silicon carbide (SiC), Bipolar transistors, Semiconductor junctions, Silicon, Silicon carbide, State estimation, Current gains, Emitter edges, Emitter-size effect, Geometrical effect, On currents, Silicon carbides (SiC), Surface recombinations, Power bipolar transistors
وصف الملف: print
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3
المؤلفون: Buono, Benedetto, Ghandi, Reza, Domeij, Martin, Malm, B. Gunnar, Zetterling, Carl-Mikael, Östling, Mikael
المصدر: Materials Science Forum. 645-648:1061-1064
مصطلحات موضوعية: simulations, current gain, interface traps, temperature modeling, emitter size effect, TECHNOLOGY, Electrical engineering, electronics and photonics, TEKNIKVETENSKAP, Elektroteknik, elektronik och fotonik
وصف الملف: print
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4
المؤلفون: Lee, Hyung-Seok, Domeij, Martin, Zetterling, Carl-Mikael, Ghandi, Reza, Östling, Mikael, Allerstam, Fredrik, 1978, Sveinbjörnsson, Einar, 1964
المصدر: Materials Science Forum. 600-603:1151-1154
مصطلحات موضوعية: Emitter size effect, Bipolar Junction Transistor, Surface recombination, Junction Termination
URL الوصول: https://research.chalmers.se/publication/79848
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5
المصدر: Materials Science Forum. 527-529:1425-1428
مصطلحات موضوعية: bipolar junction transistor, surface recombination, emitter-size effect, current gain, device simulation
وصف الملف: print
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6Conference
المؤلفون: BIANCHI, MICHELE, MELINO, FRANCESCO, PERETTO, ANTONIO, C. Ferrari
المساهمون: M. Bianchi, C. Ferrari, F. Melino, A. Peretto
مصطلحات موضوعية: THERMO-PHOTO-VOLTAIC GENERATOR, MICRO-COGENERATION, emitter size
وصف الملف: ELETTRONICO
Relation: info:eu-repo/semantics/altIdentifier/isbn/9788890848902; ispartofbook:Proceedings of Microgen III; Microgen III; firstpage:1; lastpage:10; numberofpages:10; http://hdl.handle.net/11585/148266
الاتاحة: http://hdl.handle.net/11585/148266
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7Conference
المؤلفون: Ferrari C., Pinelli M., MELINO, FRANCESCO, PERETTO, ANTONIO
المساهمون: Ferrari C., Melino F., Peretto A., Pinelli M.
مصطلحات موضوعية: Thermo–Photo–Voltaic generator, emitter size optimization
وصف الملف: ELETTRONICO
Relation: ispartofbook:Proceedings of the Fifth International Conference on Applied Energy; Fifth International Conference on Applied Energy; firstpage:1; lastpage:10; numberofpages:10; http://hdl.handle.net/11585/172870
الاتاحة: http://hdl.handle.net/11585/172870
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8Academic Journal
المؤلفون: Attolini G., Bosi M., Ferrari C., MELINO, FRANCESCO
المساهمون: Attolini G., Bosi M., Ferrari C., Melino F.
مصطلحات موضوعية: THERMOPHOTOVOLTAIC (TPV), emitter size
وصف الملف: ELETTRONICO
Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000314669500058; volume:103; firstpage:618; lastpage:626; numberofpages:9; journal:APPLIED ENERGY; http://hdl.handle.net/11585/172868; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-84871717829
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9
المؤلفون: Lee, Hyung-Seok, Domeij, Martin, Zetterling, Carl-Mikael, Östling, Mikael, Allerstam, Fredrik, Sveinbjörnsson, Einar Ö.
المصدر: IEEE Electron Device Letters. 28(11):1007-1009
مصطلحات موضوعية: bipolar junction transistors (BJTs), current gain, emitter-size effect, high voltage, surface recombination, 4H-silicon carbide, inversion channel mobility, mosfets, TECHNOLOGY, Electrical engineering, electronics and photonics, TEKNIKVETENSKAP, Elektroteknik, elektronik och fotonik
وصف الملف: print
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10
المؤلفون: Domeij, Martin, Lee, Hyung-Seok, Danielsson, Erik, Zetterling, Carl-Mikael, Östling, Mikael, Schöner, Adolf
المصدر: IEEE Electron Device Letters. 26(10):743-745
مصطلحات موضوعية: 4H-SiC, bipolar junction transistor (BJT), breakdown voltage, current gain, emitter-size effect, bipolar junction transistors, 1800 v, TECHNOLOGY, Electrical engineering, electronics and photonics, TEKNIKVETENSKAP, Elektroteknik, elektronik och fotonik
وصف الملف: print
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11Academic Journal
المؤلفون: Low On-resistance, H. -s. Lee, M. Domeij, C. -m. Zetterling, R. Gh, M. Östling, F. Allerstam, E. Ö. Sveinbjörnsson
المساهمون: The Pennsylvania State University CiteSeerX Archives
مصطلحات موضوعية: Bipolar Junction Transistor, Emitter size effect, Surface recombination, Junction Termination
وصف الملف: application/pdf
Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.698.4331; http://www.scientific.net/MSF.600-603.1151.pdf
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12Academic Journal
المؤلفون: Type-ii Gaassb Dhbts, Huiming Xu, Eric W. Iverson, Ardy Winoto, Milton Feng
المساهمون: The Pennsylvania State University CiteSeerX Archives
مصطلحات موضوعية: Emitter Size Effect, Scaling, DHBT, GaAsSb, Ledge
وصف الملف: application/pdf
Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.673.7303; http://gaasmantech.org/Digests/2014/papers/059.pdf