المؤلفون: Taehoon Kim, Yeonbae Chung

المصدر: Applied Sciences, Vol 14, Iss 21, p 9749 (2024)

مصطلحات موضوعية: configurable embedded DRAM, logic operation, arithmetic operation, binary convolution, compute-in-memory, Technology, Engineering (General). Civil engineering (General), TA1-2040, Biology (General), QH301-705.5, Physics, QC1-999, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2076-3417/14/21/9749; https://doaj.org/toc/2076-3417

URL الوصول: https://doaj.org/article/cbadb4776b9b458fb13453a6acf37d57

المؤلفون: Siddhartha Raman Sundara Raman, Shanshan Xie, Jaydeep P. Kulkarni

المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 8, Iss 1, Pp 35-43 (2022)

مصطلحات موضوعية: Compute-in-memory (CIM), embedded DRAM (eDRAM), indium–gallium–zinc–oxide (IGZO), leakage, multilevel cell, read, Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9815041/; https://doaj.org/toc/2329-9231

URL الوصول: https://doaj.org/article/5450d2647f7c4ba6a393b1a076f8b885

المؤلفون: Subin Kim, Ingu Jeong, Jun-Eun Park

المصدر: Sensors, Vol 23, Iss 23, p 9329 (2023)

مصطلحات موضوعية: artificial intelligence (AI), processing-in-memory (PIM), gain-cell embedded DRAM (eDRAM), pseudo-static leakage compensation (PSLC), retention time, sensor hub, Chemical technology, TP1-1185

Relation: https://www.mdpi.com/1424-8220/23/23/9329; https://doaj.org/toc/1424-8220; https://doaj.org/article/1843d1e9a0504db08436733a529d591f

الاتاحة: https://doi.org/10.3390/s23239329
https://doaj.org/article/1843d1e9a0504db08436733a529d591f

المساهمون: Mittal, Sparsh [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)] (ORCID:000000022908993X)

المصدر: IEEE Transactions on Parallel and Distributed Systems; 27; 6

وصف الملف: Medium: ED; Size: 14 p.

URL الوصول: http://www.osti.gov/scitech/servlets/purl/1332070

المؤلفون: Subin Kim, Jun-Eun Park

المصدر: Sensors; Volume 22; Issue 11; Pages: 4284

مصطلحات موضوعية: processing-in-memory (PIM), gain-cell embedded DRAM (eDRAM), pseudo-static leakage compensation (PSLC)

وصف الملف: application/pdf

Relation: Electronic Sensors; https://dx.doi.org/10.3390/s22114284

الاتاحة: https://doi.org/10.3390/s22114284

المؤلفون: Esteban Garzón, Adam Teman, Marco Lanuzza

المصدر: Electronics; Volume 11; Issue 1; Pages: 61

مصطلحات موضوعية: cryogenic, 77 K, cold electronics, low-power, embedded memory, SRAM, Gain-Cell embedded DRAM (GC-eDRAM), STT-MRAM, magnetic tunnel junction (MTJ)

وصف الملف: application/pdf

Relation: Circuit and Signal Processing; https://dx.doi.org/10.3390/electronics11010061

الاتاحة: https://doi.org/10.3390/electronics11010061

المؤلفون: Esteban J. Garzón C., Adam Teman, Marco Lanuzza

المصدر: Electronics, Vol 11, Iss 61, p 61 (2022)
Electronics; Volume 11; Issue 1; Pages: 61

مصطلحات موضوعية: low-power, TK7800-8360, Computer Networks and Communications, cryogenic, 77 K, cold electronics, embedded memory, SRAM, Gain-Cell embedded DRAM (GC-eDRAM), STT-MRAM, magnetic tunnel junction (MTJ), Hardware and Architecture, Control and Systems Engineering, Signal Processing, Electrical and Electronic Engineering, Electronics

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cf6ef5ac388bc694f651a242e18b9b1
https://www.mdpi.com/2079-9292/11/1/61

المؤلفون: Anteneh Gebregiorgis, Hoang Anh Du Nguyen, Jintao Yu, Rajendra Bishnoi, Mottaqiallah Taouil, Francky Catthoor, Said Hamdioui

مصطلحات موضوعية: Technology, Science & Technology, RANDOM-ACCESS MEMORY, CHIP, Engineering, Electrical & Electronic, BENCHMARK, Computation-in-memory, OPERATIONS, Engineering, classification, DESIGN, Hardware and Architecture, MEMRISTOR, Computer Science, resistive computing, computer architectures, LOGIC, IMPLEMENTATION, Science & Technology - Other Topics, Electrical and Electronic Engineering, Nanoscience & Nanotechnology, Computer Science, Hardware & Architecture, Software, EMBEDDED DRAM DEVELOPMENT

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d6ea2609588ba99e966c72de735f2a1
https://lirias.kuleuven.be/handle/20.500.12942/710823

المؤلفون: Xuelian Liu, Aamir Zia

المصدر: Radioengineering, Vol 22, Iss 4, Pp 975-984 (2013)

مصطلحات موضوعية: Capacitor-less 1T DRAM, embedded DRAM, FD-SOI, floating body cell, memory stack, 3-D integration, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1210-2512

URL الوصول: https://doaj.org/article/36177e8c458a4183902ff3191a293073

المساهمون: Li, Dong [ORNL]

المصدر: Conference: 23rd International ACM Symposium on High Performance Parallel and Distributing Computing (HPDC), Vancouver, Canada, 20140623, 20140627

وصف الملف: Medium: X

URL الوصول: http://www.osti.gov/scitech/biblio/1143558

المؤلفون: Liu, Xuelian, Zia, Aamir

مصطلحات موضوعية: Capacitor-less 1T DRAM, embedded DRAM, FD-SOI, floating body cell, memory stack, 3-D integration

وصف الملف: text; 975-984; application/pdf

Relation: Radioengineering; http://www.radioeng.cz/fulltexts/2013/13_04_0975_0984.pdf; Radioengineering. 2013, vol. 22, č. 4, s. 975-984. issn 1210-2512; http://hdl.handle.net/11012/36950

الاتاحة: http://hdl.handle.net/11012/36950

المساهمون: Li, Dong [ORNL]

المصدر: IEEE Transactions on Parallel and Distributed Systems

وصف الملف: Medium: X; Size: 1

URL الوصول: http://www.osti.gov/scitech/biblio/1133585

المؤلفون: Andreas Burg, Robert Giterman, Andrea Bonetti, Adam Teman

المصدر: ISCAS
Scopus-Elsevier

مصطلحات موضوعية: clocks, Computer science, Silicon on insulator, 02 engineering and technology, Integrated circuit, eDRAM, law.invention, body-biasing, embedded dram, circuits and systems, law, 0202 electrical engineering, electronic engineering, information engineering, timing, Electronic engineering, edram, Static random-access memory, Electrical and Electronic Engineering, Data retention, inverters, sram, data retention time, gain-cell edram, Hardware_MEMORYSTRUCTURES, 020208 electrical & electronic engineering, gain-cells, Sense (electronics), 020202 computer hardware & architecture, switches, discharges (electric), random access memory, Inverter, Error detection and correction, memory circuits, Dram, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f51b222808608e4a35d7c70d0d654845
https://doi.org/10.1109/iscas45731.2020.9180997

المؤلفون: Roman Golman, Robert Giterman, Adam Teman

المصدر: IEEE Access, Vol 7, Pp 27641-27649 (2019)

مصطلحات موضوعية: General Computer Science, Computer science, gain cells, 02 engineering and technology, Reduction (complexity), embedded dram, error correcting codes, 0202 electrical engineering, electronic engineering, information engineering, Redundancy (engineering), General Materials Science, Static random-access memory, Latency (engineering), sram, gain-cell, time, Leakage (electronics), Hardware_MEMORYSTRUCTURES, low power, 020208 electrical & electronic engineering, General Engineering, area, gc-edram, Reliability engineering, error detection and correction, lcsh:Electrical engineering. Electronics. Nuclear engineering, Error detection and correction, lcsh:TK1-9971, logic-compatible edram, Dram, Efficient energy use

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0387865eb9a2c2687a1fd52254098621
https://doi.org/10.1109/access.2019.2901738

المؤلفون: Jintao Yu, Muath Abu Lebdeh, Said Hamdioui, Francky Catthoor, Mottaqiallah Taouil, Hoang Anh Du Nguyen

مصطلحات موضوعية: Technology, RANDOM-ACCESS MEMORY, PROCESSOR, Computer science, Emerging technologies, Computation, Reliability (computer networking), Computation-in-memory, Field (computer science), GeneralLiterature_MISCELLANEOUS, memory-centric computer architectures, Terminology, Engineering, DESIGN, MEMRISTOR, LOGIC, Electrical and Electronic Engineering, Architecture, Nanoscience & Nanotechnology, Computer Science, Hardware & Architecture, GeneralLiterature_REFERENCE(e.g.,dictionaries,encyclopedias,glossaries), EMBEDDED DRAM DEVELOPMENT, ARCHITECTURE, Science & Technology, CHALLENGES, CHIP, Engineering, Electrical & Electronic, CMOS, Computer architecture, Hardware and Architecture, Computer Science, resistive computing, Parallelism (grammar), Science & Technology - Other Topics, Software

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::491d3e62f536491b3888001980cd3546
https://lirias.kuleuven.be/handle/123456789/663710

المؤلفون: Jonathan Narinx, Cosimo Aprile, Andrea Bonetti, Nicolas Frigerio, Yusuf Leblebici, Andreas Burg, Robert Giterman

المصدر: A-SSCC

مصطلحات موضوعية: Hardware_MEMORYSTRUCTURES, business.industry, Computer science, 020208 electrical & electronic engineering, Silicon on insulator, 02 engineering and technology, eDRAM, 020202 computer hardware & architecture, embedded dram, Computer data storage, 0202 electrical engineering, electronic engineering, information engineering, Static random-access memory, Data retention, business, Digital signal processing, Dram, Computer hardware, Leakage (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9104262e9b9fbfa895f37fd5c99c531
https://doi.org/10.1109/a-sscc47793.2019.9056985

المؤلفون: Tu, Fengbin, Wu, Weiwei, Yin, Shouyi, Liu, Leibo, Wei, Shaojun

مصطلحات موضوعية: Embedded DRAM (eDRAM), Neural network, Refresh optimization, Retention time

Relation: https://repository.hkust.edu.hk/ir/Record/1783.1-127252; Proceedings - International Symposium on Computer Architecture, v. 2018, July 2018, article number 8416839, p. 340-352; https://doi.org/10.1109/ISCA.2018.00037; http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1063-6897&rft.volume=&rft.issue=&rft.date=2018&rft.spage=340&rft.aulast=Tu&rft.aufirst=&rft.atitle=RANA%3A+Towards+efficient+neural+acceleration+with+refresh-Optimized+embedded+DRAM&rft.title=Proceedings+-+International+Symposium+on+Computer+Architecture; http://www.scopus.com/record/display.url?eid=2-s2.0-85055873008&origin=inward; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000458810500026

الاتاحة: https://repository.hkust.edu.hk/ir/Record/1783.1-127252
https://doi.org/10.1109/ISCA.2018.00037
http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=1063-6897&rft.volume=&rft.issue=&rft.date=2018&rft.spage=340&rft.aulast=Tu&rft.aufirst=&rft.atitle=RANA%3A+Towards+efficient+neural+acceleration+with+refresh-Optimized+embedded+DRAM&rft.title=Proceedings+-+International+Symposium+on+Computer+Architecture
http://www.scopus.com/record/display.url?eid=2-s2.0-85055873008&origin=inward
http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000458810500026

المؤلفون: Tadaaki Yamauchi, Lance Hammond, Kunle Olukotun

المساهمون: The Pennsylvania State University CiteSeerX Archives

المصدر: http://www.mavam.com/lance/publications/dramcmp_TechReport97.pdf.

مصطلحات موضوعية: on-chip DRAM, embedded DRAM, L2 caches, on-chip L2 caches, SRAM caches, mul- tiprocessors, multiprocessor-on-a-chip 1

وصف الملف: application/pdf

Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.89.2996; http://www.mavam.com/lance/publications/dramcmp_TechReport97.pdf

الاتاحة: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.89.2996
http://www.mavam.com/lance/publications/dramcmp_TechReport97.pdf

المؤلفون: Narinx, Jonathan Emmanuel D

المساهمون: Leblebici, Yusuf, Burg, Andreas Peter

مصطلحات موضوعية: data retention time, 2K resolution, ASIC, real-time, FPGA. Gain-cell embedded DRAM (GC-eDRAM), Depth estimation, stereo matching, logic-compatible eDRAM, trinocular disparity estimation, 3T

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::277c1bb6bd556944bbb01f27bda80b1d

المؤلفون: Cheol Ha Lee, Jun Dong Cho, Jung Han Kim, Kyong Jun Noh

المصدر: IEICE Electronics Express. 2013, 10(18):20130647