المؤلفون: Yuehong Yang, Boyang Zong, Qikun Xu, Qiuju Li, Zhuo Li, Shun Mao

مصطلحات موضوعية: Microbiology, Biotechnology, Inorganic Chemistry, Plant Biology, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, unique electrical properties, new sensing method, new sensing material, mechanism study shows, extraordinary sensing performance, different sensing behaviors, air quality control, achieve excellent sensitivity, chemiresistor gas sensors, various mixed gases, low detection limit, dimensional violet phosphorus, vp gas sensors, effect transistors two, based analysis method, 2 , gas molecule, x <, effect transistor, based field, ∼ 50, vp surface, vp nanosheet

Relation: https://figshare.com/articles/journal_contribution/Discriminative_Analysis_of_NO_sub_i_x_i_sub_Gases_by_Two-Dimensional_Violet_Phosphorus_Field-Effect_Transistors/24662907

الاتاحة: https://doi.org/10.1021/acs.analchem.3c02894.s001
https://figshare.com/articles/journal_contribution/Discriminative_Analysis_of_NO_sub_i_x_i_sub_Gases_by_Two-Dimensional_Violet_Phosphorus_Field-Effect_Transistors/24662907

المؤلفون: Jong-Hwan Lee (1866739), Jaekwang Song (3195243), Dong Heon Shin (2393062), Seoungwoong Park (5215127), Hwa Rang Kim (11642495), Sung-Pyo Cho (1824226), Byung Hee Hong (1276986)

مصطلحات موضوعية: Medicine, Physiology, Biotechnology, Sociology, Cancer, Plant Biology, Information Systems not elsewhere classified, tunable direct bandgap, physical vapor deposition, outstanding electronic properties, generation semiconductor due, attracted great attention, gas treatment masked, gradual edge contact, effect transistors two, 2 , mo channel area, effect transistors, masked sulfurization, top contact, contact resistance, situ sulfurization, molybdenum disulfide, extraordinary stability, dimensional materials, channel provides

Relation: https://figshare.com/articles/journal_contribution/Gradual_Edge_Contact_between_Mo_and_MoS_sub_2_sub_Formed_by_Graphene-Masked_Sulfurization_for_High-Performance_Field-Effect_Transistors/16924469

الاتاحة: https://doi.org/10.1021/acsami.1c15648.s001