المؤلفون: Shigehisa Shibayama, Shuto Ishimoto, Yoshiki Kato, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka

المصدر: IEEE Journal of the Electron Devices Society, Vol 13, Pp 79-85 (2025)

مصطلحات موضوعية: Germanium (Ge), germanium-tin (GeSn), germanium-silicon-tin (GeSiSn), heterostructure, double barrier structure, epitaxial growth, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10839296/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/f62ae4f0580447199938bbdbb22cde03

المؤلفون: N.A. Klychkov, V.V. Simakov, I.V. Sinev

المصدر: Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, Vol 16, Pp 906-921 (2024)

مصطلحات موضوعية: zinc oxide, semiconductor gas sensor, gas sensitivity at room temperature, temperature dependence of conductivity, oxygen dissociation, surface acceptor, schottky double barrier model, Physical and theoretical chemistry, QD450-801

وصف الملف: electronic resource

Relation: https://physchemaspects.ru/2024/doi-10-26456-pcascnn-2024-16-906/?lang=en; https://doaj.org/toc/2226-4442; https://doaj.org/toc/2658-4360

URL الوصول: https://doaj.org/article/3bf65262b443482eab496a5b4cd7f501

المؤلفون: Ru Xu, Peng Chen, Xiancheng Liu, Jianguo Zhao, Tinggang Zhu, Dunjun Chen, Zili Xie, Jiandong Ye, Xiangqian Xiu, Fayu Wan, Jianhua Chang, Rong Zhang, Youdou Zheng

المصدر: Chip, Vol 3, Iss 1, Pp 100079- (2024)

مصطلحات موضوعية: AlGaN/GaN Schottky barrier diode, Double-barrier anode, Turn-on voltage, Ultra-high-voltage, Information technology, T58.5-58.64

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2709472323000424; https://doaj.org/toc/2709-4723

URL الوصول: https://doaj.org/article/184b0a5faca8417593d4349b32f97d1e

المؤلفون: Guillaume Leduc

المصدر: Mathematics, Vol 12, Iss 7, p 964 (2024)

مصطلحات موضوعية: double barrier options, tree method, repeated Richardson extrapolation, Mathematics, QA1-939

Relation: https://www.mdpi.com/2227-7390/12/7/964; https://doaj.org/toc/2227-7390; https://doaj.org/article/a0448cdd6a2e4b3ca5eefea994a2a1a1

الاتاحة: https://doi.org/10.3390/math12070964
https://doaj.org/article/a0448cdd6a2e4b3ca5eefea994a2a1a1

المؤلفون: Amina Noual, Messai Zitouni, Zine-eddine Touati, Okba Saidani, Abderrahim Yousfi

المصدر: East European Journal of Physics, Iss 4 (2023)

مصطلحات موضوعية: TiO2-MOSHEMT, T-gate, Double barrier, AlInGaN Quaternary material, Maximum THz frequency, TCAD-Silvaco, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://periodicals.karazin.ua/eejp/article/view/22409; https://doaj.org/toc/2312-4334; https://doaj.org/toc/2312-4539

URL الوصول: https://doaj.org/article/47e320f505104c7f93810fc76e78b4e4

المؤلفون: Chen, Yi-Ling, Luo, Hong-Yu, Tsai, Wei-Che, Zhang, Hang

المصدر: Advances in Pacific Basin Business, Economics and Finance

URL الوصول: http://www.emeraldinsight.com/doi/10.1108/S2514-465020220000010002

المؤلفون: Esteban Garzon, Leonid Yavits, Giovanni Finocchio, Mario Carpentieri, Adam Teman, Marco Lanuzza

المصدر: IEEE Access, Vol 11, Pp 16812-16819 (2023)

مصطلحات موضوعية: Double-barrier MTJ, non-volatile TCAM (NV-TCAM), energy-efficiency, low-power, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10045679/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/0b8c07d74019444da96994f8508cc6e0

المؤلفون: Abhishree Shaw, Vinod Kumar Joshi

المصدر: Journal of Physics Communications, Vol 8, Iss 12, p 125001 (2024)

مصطلحات موضوعية: Spin Transfer Torque (STT), Tunnel Magnetoresistance (TMR), Perpendicular single barrier MTJ (SMTJ), Perpendicular double barrier MTJ (DBMTJ), OOMMF, Exchange Stiffness constant (Aex), Science, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2399-6528

URL الوصول: https://doaj.org/article/cbf7ecb22c8e46d7bd77df6f2f400ff0

المؤلفون: O.V. Osadchuk, V.S. Osadchuk, I.A. Osadchuk

المصدر: Фізика і хімія твердого тіла, Vol 23, Iss 2, Pp 277-284 (2022)

مصطلحات موضوعية: resonant tunnel diode, pressure, negative differential resistance, frequency, quantum double-barrier heterostructure, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://journals.pnu.edu.ua/index.php/pcss/article/view/5670; https://doaj.org/toc/1729-4428; https://doaj.org/toc/2309-8589

URL الوصول: https://doaj.org/article/4ed01e0bbead414f9e960f8f258876c1

المؤلفون: Rim Amami, Monique Pontier, Hani Abidi

المصدر: Arab Journal of Mathematical Sciences, Vol 28, Iss 1, Pp 2-36 (2022)

مصطلحات موضوعية: Impulse control, Infinite horizon, Jumps, Reflected backward stochastic differential equations, Double barrier, Constructive method of the solution, Mathematics, QA1-939

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1319-5166; https://doaj.org/toc/2588-9214

URL الوصول: https://doaj.org/article/98c8d3606ad84aef8691b306191bd45e

المؤلفون: Divyanshu Divyanshu, Rajat Kumar, Danial Khan, Selma Amara, Yehia Massoud

المصدر: Electronics; Volume 12; Issue 3; Pages: 479

مصطلحات موضوعية: double barrier/layer magnetic tunnel junction (DMTJ), hardware security, logic locking (LL), shape anisotropy, perpendicular-magnetic-anisotropy (PMA)

وصف الملف: application/pdf

Relation: Semiconductor Devices; https://dx.doi.org/10.3390/electronics12030479

الاتاحة: https://doi.org/10.3390/electronics12030479

المؤلفون: Moposita, Tatiana, Garzón, Esteban, Vladimirescu, Andrei, Lanuzza, Marco, Crupi, Felice, Trojman, Lionel

المساهمون: Institut Supérieur d'Electronique de Paris (ISEP), Università della Calabria Arcavacata di Rende (Unical), University of California Berkeley (UC Berkeley), University of California (UC), Laboratoire d'Informatique, Signal et Image, Electronique et Télécommunication (LISITE)

المصدر: ISSN: 1549-7747 ; EISSN: 1558-3791.

مصطلحات موضوعية: STT-MRAM, Double-barrier magnetic tunnel junction (DMTJ), multilayer perceptron (MPL), online classification, MNIST dataset, energy-efficiency, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

Relation: hal-04186109; https://hal.science/hal-04186109; https://hal.science/hal-04186109/document; https://hal.science/hal-04186109/file/Efficiency_MTJ_devices%20%281%29.pdf

الاتاحة: https://hal.science/hal-04186109
https://hal.science/hal-04186109/document
https://hal.science/hal-04186109/file/Efficiency_MTJ_devices%20%281%29.pdf
https://doi.org/10.1109/TCSII.2023.3240474

المؤلفون: Garzon, Esteban, Taco, Ramiro, Procel, Luis Miguel, Trojman, Lionel, Lanuzza, Marco

المساهمون: Università della Calabria Arcavacata di Rende (Unical), Universidad San Francisco de Quito (USFQ), Laboratoire d'Informatique, Signal et Image, Electronique et Télécommunication (LISITE), Institut Supérieur d'Electronique de Paris (ISEP)

المصدر: IEEE 13th Latin America Symposium on Circuits and System (LASCAS) 2022 ; https://hal.science/hal-03812303 ; IEEE 13th Latin America Symposium on Circuits and System (LASCAS) 2022, Mar 2022, Puerto Varas, France. pp.01-04, ⟨10.1109/LASCAS53948.2022.9789054⟩

مصطلحات موضوعية: Double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAM, embedded memory, energyefficient, low-voltage, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Puerto Varas, France

Time: Puerto Varas, France

Relation: hal-03812303; https://hal.science/hal-03812303; https://hal.science/hal-03812303/document; https://hal.science/hal-03812303/file/MTJ_LASCAS_2022_paper_12.pdf

الاتاحة: https://hal.science/hal-03812303
https://hal.science/hal-03812303/document
https://hal.science/hal-03812303/file/MTJ_LASCAS_2022_paper_12.pdf
https://doi.org/10.1109/LASCAS53948.2022.9789054

المؤلفون: Vicuna, Kevin, Procel, Luis-Miguel, Trojman, Lionel, Taco, Ramiro

المساهمون: Universidad San Francisco de Quito (USFQ), Laboratoire d'Informatique, Signal et Image, Electronique et Télécommunication (LISITE), Institut Supérieur d'Electronique de Paris (ISEP)

المصدر: 2022 IEEE 13th Latin America Symposium on Circuits and System (LASCAS)
https://hal.science/hal-03812290
2022 IEEE 13th Latin America Symposium on Circuits and System (LASCAS), Mar 2022, Puerto Varas, Chile. pp.1-4, ⟨10.1109/LASCAS53948.2022.9789065⟩

مصطلحات موضوعية: Double-barrier magnetic tunnel junction, Ternary content-addressable memories, energy-efficiency, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Puerto Varas, Chile

Time: Puerto Varas, Chile

Relation: hal-03812290; https://hal.science/hal-03812290; https://hal.science/hal-03812290/document; https://hal.science/hal-03812290/file/LASCAS2021_NV_TCAM_2DMTJ%20%281%29.pdf

الاتاحة: https://hal.science/hal-03812290
https://hal.science/hal-03812290/document
https://hal.science/hal-03812290/file/LASCAS2021_NV_TCAM_2DMTJ%20%281%29.pdf
https://doi.org/10.1109/LASCAS53948.2022.9789065

المؤلفون: Musello, Ariana, Perez, Santiago, Villegas, Marco, Procel, Luis Miguel, Taco, Ramiro, Trojman, Lionel

المساهمون: Universidad San Francisco de Quito (USFQ), Telefonica Investigación y Desarrollo (Telefonica I+D), Telefonica Group, Laboratoire d'Informatique, Signal et Image, Electronique et Télécommunication (LISITE), Institut Supérieur d'Electronique de Paris (ISEP)

المصدر: IEEE 13th Latin America Symposium on Circuits and System (LASCAS) 2022 ; https://hal.science/hal-03812310 ; IEEE 13th Latin America Symposium on Circuits and System (LASCAS) 2022, Mar 2022, Puerto Varas, Chile. pp.1-4, ⟨10.1109/LASCAS53948.2022.9789086⟩

مصطلحات موضوعية: STT-MRAM, double-barrier magnetic tunnel junction (DMTJ), tunnel FET (TFET), FinFET, ultralow voltage, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Puerto Varas, Chile

Time: Puerto Varas, Chile

Relation: hal-03812310; https://hal.science/hal-03812310; https://hal.science/hal-03812310/document; https://hal.science/hal-03812310/file/TFET_LASCAS_2022_paper_85.pdf

الاتاحة: https://hal.science/hal-03812310
https://hal.science/hal-03812310/document
https://hal.science/hal-03812310/file/TFET_LASCAS_2022_paper_85.pdf
https://doi.org/10.1109/LASCAS53948.2022.9789086

المؤلفون: Kazem Nouri, Milad Fahimi, Leila Torkzadeh, Dumitru Baleanu

المصدر: AIMS Mathematics, Vol 6, Iss 6, Pp 5750-5761 (2021)

مصطلحات موضوعية: double barrier option, orthogonal projection, chebyshev polynomial, black-scholes model, Mathematics, QA1-939

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2473-6988

URL الوصول: https://doaj.org/article/5059c1ed73784794b6329de33ff8b716

المؤلفون: Tadashi Hayashi, 林 匡史

المصدر: 応用数理 / Bulletin of the Japan Society for Industrial and Applied Mathematics. 2022, 32(4):198

المؤلفون: Khudaverdyan, S.K., Vaseashta, A., Ayvazyan, G.Y., Matevosyan, L., Khudaverdyan, A., Khachatryan, M., Makaryan, E.

المصدر: Photonics 9 (8) 1-10

مصطلحات موضوعية: longitudinal illumination, oppositely placed double-barrier structure, Photodetector, spectral dependence

وصف الملف: application/pdf

Relation: https://ibn.idsi.md/vizualizare_articol/163901; urn:issn:23046732

الاتاحة: https://ibn.idsi.md/vizualizare_articol/163901
https://doi.org/10.3390/photonics9080558

المؤلفون: Romeira, Bruno, Pessoa, Luis M., Salgado, Henrique M., Ironside, Charles N., Figueiredo, José M. L.

مصطلحات موضوعية: Double barrier quantum well structure, Clock recovery, Microwave-photonics, Optical injection locking, Optoelectronic circuits, Oscillators, Photo-detectors, Radio-over-fiber, Resonant tunneling diodes

Relation: info:eu-repo/grantAgreement/FCT/3599-PPCDT/PTDC%2FEEA-TEL%2F100755%2F2008/PT; info:eu-repo/grantAgreement/FCT/OE/SFRH%2FBPD%2F84466%2F2012/PT; Sensors 13 (7): 9464-9482 (2013); http://hdl.handle.net/10400.1/18406

الاتاحة: http://hdl.handle.net/10400.1/18406
https://doi.org/10.3390/s130709464

المؤلفون: David Lee (3605)

مصطلحات موضوعية: Neuroscience, Biotechnology, Ecology, Inorganic Chemistry, Mental Health, Hematology, Infectious Diseases, Plant Biology, Mathematical Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, Information Systems not elsewhere classified, single barrier option, double barrier option, average barrier option, barrier option valuation

Relation: https://figshare.com/articles/presentation/Valuing_Barrier_Option/14229013

الاتاحة: https://doi.org/10.5281/zenodo.4608506