المؤلفون: Chen Li, Hongxiao Lin, Junjie Li, Xiaogen Yin, Yongkui Zhang, Zhenzhen Kong, Guilei Wang, Huilong Zhu, Henry H. Radamson

المصدر: Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-12 (2020)

مصطلحات موضوعية: Phosphorus-doped silicon, SiGe, RPCVD, Dopant segregation, Auto-doping, Selective etch, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1556-276X

URL الوصول: https://doaj.org/article/8b11493489934fcb81ee73ac7e1d9d85

المؤلفون: Yixiao Jiang (2850233), Hongping Li (1601143), Tingting Yao (2554606), Yujia Wang (388097), Deqiang Yin (1603540), Chunlin Chen (1511164), Xiuliang Ma (1701187), Hengqiang Ye (2343046), Yuichi Ikuhara (1477939)

مصطلحات موضوعية: Biophysics, Biochemistry, Cell Biology, Biotechnology, Cancer, Computational Biology, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, fully coherent terraces, never expected previously, 4 , 3 , 2 , free boundaries due, low interfacial energies, 111 )/ fe, large magnetic moments, coherent phase boundaries, local spin polarization, assisted dopant segregation, pristine phase boundary, magnetic moments, phase boundaries, widely expected, spin polarization, phase boundary, dopant segregation, magnetic materials, unusual spin, trapping sites

Relation: https://figshare.com/articles/journal_contribution/Spin_Polarization-Assisted_Dopant_Segregation_at_a_Coherent_Phase_Boundary/17148087

الاتاحة: https://doi.org/10.1021/acsnano.1c07449.s001

المؤلفون: Shengyang Li (5064350), Haoyue Zhang (3372770), Guangwei She (1794061), Jing Xu (15337), Shaoyang Zhang (5612201), Yuwang Deng (10306129), Lixuan Mu (1794064), Qingli Zhou (9137773), Yun Liu (84346), Jun Luo (120285), Wensheng Shi (1794058)

مصطلحات موضوعية: Biophysics, Medicine, Neuroscience, Biotechnology, Sociology, Space Science, Environmental Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, Information Systems not elsewhere classified, schottky barrier height, introduce electrical dipoles, dopant segregation strategy, disordered native sio, shown promising potential, low defect density, interface defect density, excellent pec performance, overall water splitting, 2 , quality epitaxial interface, epitaxial interface, water splitting, quality metal, promising route, low bias, 2 %, si interface, thereby increasing

Relation: https://figshare.com/articles/journal_contribution/NiSi_sub_2_sub_p-Si_Schottky_Junction_Photocathode_with_a_High-Quality_Epitaxial_Interface_for_Efficient_Hydrogen_Evolution/16699035

الاتاحة: https://doi.org/10.1021/acsaem.1c02318.s001

المؤلفون: Soumitra Sulekar, Mehrad Mehr, Ji Hyun Kim, Juan Claudio Nino

المصدر: Inorganics; Volume 9; Issue 8; Pages: 63

مصطلحات موضوعية: ceria, dopant segregation, conductivity

وصف الملف: application/pdf

Relation: Inorganic Solid-State Chemistry; https://dx.doi.org/10.3390/inorganics9080063

الاتاحة: https://doi.org/10.3390/inorganics9080063

المؤلفون: Francis Amalraj Susai, Daniela Kovacheva, Tatyana Kravchuk, Yaron Kauffmann, Sandipan Maiti, Arup Chakraborty, Sooraj Kunnikuruvan, Michael Talianker, Hadar Sclar, Yafit Fleger, Boris Markovsky, Doron Aurbach

المصدر: Materials; Volume 14; Issue 8; Pages: 2070

مصطلحات موضوعية: lithium-ion batteries, LiNi 0.85 Co 0.10 Mn 0.05 O 2 cathode materials, Mo-doping, cycling behavior, dopant segregation at the surface

وصف الملف: application/pdf

Relation: Energy Materials; https://dx.doi.org/10.3390/ma14082070

الاتاحة: https://doi.org/10.3390/ma14082070

المؤلفون: Malm, Gunnar, 1972, Olyaei, Maryam, Östling, Mikael

المصدر: Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011. :135-138

مصطلحات موضوعية: assymetric FET, dopant segregation, FinFET, low-frequency noise, Schottky barrier source/drain, trigate, ultra-thin body

وصف الملف: electronic

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-61194
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5994282
https://kth.diva-portal.org/smash/get/diva2:478730/FULLTEXT01.pdf

المؤلفون: Min Gee KIM, Rengie Mark D. MAILIG, Shun-ichiro OHMI

المصدر: IEICE Transactions on Electronics. 2020, E103.C(6):286

المؤلفون: Tomotaroh Granzier-Nakajima, Kazunori Fujisawa, Vivek Anil, Mauricio Terrones, Yin-Ting Yeh

المصدر: Nanomaterials; Volume 9; Issue 3; Pages: 425

مصطلحات موضوعية: nitrogen doping, graphene, bonding configuration, sublattice segregation, dopant segregation

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/nano9030425

الاتاحة: https://doi.org/10.3390/nano9030425

المؤلفون: Feng Sun, Chen Li, Chaochao Fu, Xiangbiao Zhou, Jun Luo, Wei Zou, Zhi-Jun Qiu, Dongping Wu

المصدر: Materials; Volume 11; Issue 4; Pages: 471

مصطلحات موضوعية: Schottky barrier height, SB-MOSFET, dopant segregation, microwave annealing, dual implantation

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/ma11040471

الاتاحة: https://doi.org/10.3390/ma11040471

المؤلفون: Rengie Mark D. MAILIG, Shun-ichiro OHMI, Yuya TSUKAMOTO

المصدر: IEICE Transactions on Electronics. 2019, E102.C(6):453

المؤلفون: Rengie Mark D. MAILIG, Shun-ichiro OHMI

المصدر: IEICE Transactions on Electronics. 2019, E102.C(6):447

المؤلفون: Luo, Jun, Gao, Xindong, Qiu, Zhi-Jun, Lu, Jun, Wu, Dongping, Zhao, Chao, Li, Junfeng, Chen, Dapeng, Hultman, Lars, Zhang, Shi-Li

المصدر: IEEE Electron Device Letters. 32(8):1029-1031

مصطلحات موضوعية: Dopant segregation (DS), epitaxy, morphological stability, NiSi(2), Schottky barrier height (SBH), ultrathin, TECHNOLOGY, TEKNIKVETENSKAP

وصف الملف: electronic

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-70223
https://liu.diva-portal.org/smash/get/diva2:436997/FULLTEXT01.pdf

المؤلفون: Fu, Chaochao, Zhou, Xiangbiao, Wang, Yan, Xu, Peng, Xu, Ming, Wu, Dongping, Luo, Jun, Zhao, Chao, Zhang, Shi-Li

المصدر: Materials. 9(5)

مصطلحات موضوعية: microwave annealing, Schottky barrier height, MOSFETs, dopant segregation, low temperature, diode

وصف الملف: electronic

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-294771
https://uu.diva-portal.org/smash/get/diva2:931300/FULLTEXT01.pdf

المؤلفون: Min Gee Kim, RengieMark Domincel Mailig, Shun-ichiro Ohmi

المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :2758

المساهمون: Browning, Nigel

المصدر: Materials Research Letters, 2(1):16-22

وصف الملف: Medium: X

URL الوصول: http://www.osti.gov/scitech/biblio/1177320

المؤلفون: Henry H. Radamson, Huilong Zhu, Chen Li, Zhenzhen Kong, Yongkui Zhang, Xiaogen Yin, Guilei Wang, Hongxiao Lin, Junjie Li

المصدر: Nanoscale Research Letters
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-12 (2020)

مصطلحات موضوعية: Materials science, Hydrogen, SiGe, Nanochemistry, chemistry.chemical_element, Germanium, Selective etch, Epitaxy, law.invention, Phosphorus-doped silicon, law, Lattice (order), lcsh:TA401-492, General Materials Science, RPCVD, Dopant segregation, Nano Express, business.industry, Transistor, Condensed Matter Physics, chemistry, Optoelectronics, Auto-doping, lcsh:Materials of engineering and construction. Mechanics of materials, Dry etching, business, Selectivity

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b55689ea0c8146b2d7e0de7146c62207
http://europepmc.org/articles/PMC7726092

المؤلفون: Vega, Reinaldo

مصطلحات موضوعية: Engineering, Electronics and Electrical, Solid State physics, dopant segregation, high-k dielectrics, metallic source/drain, schottky, silicide, silicon germanium

وصف الملف: application/pdf

URL الوصول: https://escholarship.org/uc/item/1707173c

المؤلفون: Suvar, Erdal, 1972

المصدر: Trita-EKT.

مصطلحات موضوعية: Silicon-Germanium-Carbon (SiGeC), Heterojunction bipolar transistor (HBT), chemical vapor deposition (CVD), selective epitaxy, non-selective epitaxy, collector design, high-frequency measurement, dopant segregation, thermal stability

وصف الملف: electronic

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3674
https://kth.diva-portal.org/smash/get/diva2:9510/FULLTEXT01.pdf

المؤلفون: Mauricio Terrones, Kazunori Fujisawa, Vivek Anil, Tomotaroh Granzier-Nakajima, Yin Ting Yeh

المصدر: Nanomaterials, Vol 9, Iss 3, p 425 (2019)

مصطلحات موضوعية: Materials science, Dopant, Graphene, Economies of agglomeration, General Chemical Engineering, Doping, graphene, nitrogen doping, sublattice segregation, chemistry.chemical_element, Nitrogen, Catalysis, law.invention, lcsh:Chemistry, chemistry, bonding configuration, lcsh:QD1-999, law, Chemical physics, Lattice (order), General Materials Science, dopant segregation, Single crystal

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c387bb39fcc3dc08aea01fd890d28181
http://www.mdpi.com/2079-4991/9/3/425

المؤلفون: Duan, Ningyuan, Luo, Jun, Wang, Guilei, Liu, Jinbiao, Simoen, Eddy, Mao, Shujuan, Radamson, Henry, Wang, Xiaolei, Li, Junfeng, Wang, Wenwu, Zhao, Chao, Ye, Tianchun

المصدر: IEEE Transactions on Electron Devices. 63(11):4546-4549

مصطلحات موضوعية: Carbon implant, dopant segregation (DS), NiGe, specific contact resistivity

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-199550