المؤلفون: Refilwe Edwin Mapasha, Sentserere Phodisho Kgalema, Hezekia Mapingire, Emmanuel Igumbor

المصدر: Nanoenergy Advances, Vol 4, Iss 1, Pp 122-132 (2024)

مصطلحات موضوعية: graphane, divacancy, lithiation, density functional theory, charge doping, conductivity, Physics, QC1-999, Chemical technology, TP1-1185

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2673-706X/4/1/7; https://doaj.org/toc/2673-706X

URL الوصول: https://doaj.org/article/175c8bcd5c1b461dbc170b650c0ff4b8

المؤلفون: Van Chinh Ngo, Nguyen Huu Hanh Pham, Thi Kim Quyen Nguyen, Thi Kim Loan Phan, Thanh Tra Vu

المصدر: Tạp chí Khoa học Đại học Đà Lạt, Vol 14, Iss 3S (2024)

مصطلحات موضوعية: Buckled silicene nanoribbons, Divacancy, Electric field, Electronic structure, Tight binding., Science, Social Sciences

وصف الملف: electronic resource

Relation: https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1232; https://doaj.org/toc/0866-787X

URL الوصول: https://doaj.org/article/8c346c5bcaa841bfabdefc376791dd02

المؤلفون: Yurov V., Zhangozin K.

المصدر: Norwegian Journal of development of the International Science, 124, (2024-01-12)

مصطلحات موضوعية: graphene, monolayer, monovacancy, divacancy, defect, carbon, barrier, dislocation

Relation: https://zenodo.org/communities/njd-iscience; https://doi.org/10.5281/zenodo.10515012; https://doi.org/10.5281/zenodo.10515013; oai:zenodo.org:10515013

الاتاحة: https://doi.org/10.5281/zenodo.10515013

المؤلفون: Susumu Minami, Yoshitaka Ikeda, Takahiro Shimada

مصطلحات موضوعية: Biophysics, Medicine, Evolutionary Biology, Immunology, Infectious Diseases, Virology, Space Science, Astronomical and Space Sciences not elsewhere classified, Mathematical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, ultimately small scale, scale polar skyrmions, promising technological applications, novel functional nanodevices, extremely challenging due, also discuss accumulating, polar topological order, novel topological transition, nontrivial topological order, emerging topological orders, oxygen divacancy model, scale polar skyrmion, 3 , engineering oxygen vacancies, oxygen vacancies, topological numbers, defect engineering, ultimate atomic, spontaneous atomic, recent discovery

Relation: https://figshare.com/articles/journal_contribution/Spontaneous_Atomic-Scale_Polar_Skyrmions_and_Merons_on_a_SrTiO_sub_3_sub_001_Surface_Defect_Engineering_for_Emerging_Topological_Orders/25360521

الاتاحة: https://doi.org/10.1021/acs.nanolett.3c05112.s001

المؤلفون: Ngo, Van Chinh, Pham, Nguyen Huu Hanh, Nguyen, Thi Kim Quyen, Phan, Thi Kim Loan, Vu, Thanh Tra

المصدر: Dalat University Journal of Science; Volume 14, Issue 3S (2024): Natural Sciences and Technology; 17-29 ; Tạp chí Khoa học Đại học Đà Lạt; Tập 14, Số 3S (2024): Chuyên san Khoa học Tự nhiên và Công nghệ; 17-29 ; 0866-787X

مصطلحات موضوعية: Buckled silicene nanoribbons, Divacancy, Electric field, Electronic structure, Tight binding

وصف الملف: application/pdf

Relation: https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1232/537; https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1232

الاتاحة: https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1232

المؤلفون: Vuillermet, Enora, Marion, Bercu, Nicolas, Etienne, Florence, Lazar, Mihai

المساهمون: Lumière, nanomatériaux et nanotechnologies (L2n), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Recherche en Nanosciences - EA 4682 (LRN), Université de Reims Champagne-Ardenne (URCA)-SFR CAP Santé (Champagne-Ardenne Picardie Santé), Université de Reims Champagne-Ardenne (URCA)-Université de Reims Champagne-Ardenne (URCA)-SFR Condorcet, Université de Reims Champagne-Ardenne (URCA)-Centre National de la Recherche Scientifique (CNRS)-Université de Reims Champagne-Ardenne (URCA)-Centre National de la Recherche Scientifique (CNRS), Nanomat platform, part of the Renatech platform, supported by the Ministère de l’Enseignement Supérieur et de la Recherche, the Région Grand Est, and FEDER funds from the European Community., European Project: 508 2699-33931

المصدر: ISSN: 2079-6412 ; Coatings ; https://hal.science/hal-04170818 ; Coatings, 2023, 13 (6), pp.992. ⟨10.3390/coatings13060992⟩ ; https://www.mdpi.com/.

مصطلحات موضوعية: silicon vacancy, divacancy, 4H-SiC, cathodoluminescence, ion implantation, annealing, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic

Relation: info:eu-repo/grantAgreement//508 2699-33931/EU/European FEDER funds/; hal-04170818; https://hal.science/hal-04170818; https://hal.science/hal-04170818/document; https://hal.science/hal-04170818/file/coatings-13-00992.pdf

الاتاحة: https://hal.science/hal-04170818
https://hal.science/hal-04170818/document
https://hal.science/hal-04170818/file/coatings-13-00992.pdf
https://doi.org/10.3390/coatings13060992

المؤلفون: Yu Jin, Victor Wen-zhe Yu, Marco Govoni, Andrew C. Xu, Giulia Galli

مصطلحات موضوعية: Biophysics, Medicine, Inorganic Chemistry, Science Policy, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, tddft ), including, several acceleration techniques, predict optical absorption, negatively charged nitrogen, based architectures along, account structural relaxations, 4h silicon carbide, flip hybrid time, excited state properties, several point defects, neutral divacancy center, point defects, neutral silicon, state systems, excited states, neutral oxygen, vacancy center, results highlight, magnesium oxide, emission mechanisms, efficient calculations

Relation: https://figshare.com/articles/journal_contribution/Excited_State_Properties_of_Point_Defects_in_Semiconductors_and_Insulators_Investigated_with_Time-Dependent_Density_Functional_Theory/24712923

الاتاحة: https://doi.org/10.1021/acs.jctc.3c00986.s001
https://figshare.com/articles/journal_contribution/Excited_State_Properties_of_Point_Defects_in_Semiconductors_and_Insulators_Investigated_with_Time-Dependent_Density_Functional_Theory/24712923

المؤلفون: Lin Liu (74495), Jun-Feng Wang (552750), Xiao-Di Liu (9205406), Hai-An Xu (14247412), Jin-Ming Cui (6824729), Qiang Li (8118), Ji-Yang Zhou (11219132), Wu-Xi Lin (11219135), Zhen-Xuan He (13322097), Wan Xu (1490116), Yu Wei (365236), Zheng-Hao Liu (8197890), Pu Wang (171923), Zhi-He Hao (13322103), Jun-Feng Ding (14247415), Hai-Ou Li (304769), Wen Liu (39804), Hao Li (31608), Lixing You (11219138), Jin-Shi Xu (5181443), Eugene Gregoryanz (8726121), Chuan-Feng Li (3961034), Guang-Can Guo (1511335)

مصطلحات موضوعية: Biophysics, Medicine, Cell Biology, Molecular Biology, Neuroscience, Space Science, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, coherence time decreases, sup >– 1, 2 , 14 , divacancy defects created, silicon carbide appear, diamond anvil cell, various quantum technologies, silicon carbide, quantum technologies, 1 mhz, quantum sensing, use divacancy, divacancy spins, divacancy demonstrates, vacancy centers, times larger, systematically study, spin properties, promising tool, magnetic detection

Relation: https://figshare.com/articles/journal_contribution/Coherent_Control_and_Magnetic_Detection_of_Divacancy_Spins_in_Silicon_Carbide_at_High_Pressures/21711289

الاتاحة: https://doi.org/10.1021/acs.nanolett.2c03378.s001

المساهمون: Awschalom, David [Argonne National Lab. (ANL), Argonne, IL (United States)]

المصدر: Proceedings of the IEEE; 104; 10

وصف الملف: Medium: ED; Size: p. 2009-2023

URL الوصول: http://www.osti.gov/scitech/servlets/purl/1339658

المؤلفون: Sebastian Calderon V (11992861), Rafael V. Ferreira (11772405), Deepyanti Taneja (11772408), RT Jayanth (10010948), Langyan Zhou (11772414), Ricardo M. Ribeiro (11772417), Deji Akinwande (1424785), Paulo J. Ferreira (1282860)

مصطلحات موضوعية: Biophysics, Medicine, Cell Biology, Science Policy, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, total charge distribution, atomic electrostatic maps, atomic electrostatic fields, sulfur atoms leads, sulfur atom removed, projected electric field, atomic electric field, sulfur monovacancy sites, 2 , electric field strength, regions containing defects, electric field, sulfur monovacancies, divacancy sites, significant redistribution, progressive decrease, point defects, original value, nearly vanishes, computer simulations, around 15, approximately 50

Relation: https://figshare.com/articles/journal_contribution/Atomic_Electrostatic_Maps_of_Point_Defects_in_MoS_sub_2_sub_/17100228

الاتاحة: https://doi.org/10.1021/acs.nanolett.1c02334.s001

المؤلفون: B.D. Shanina,, V.Ya. Bratus’

المصدر: Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 21, Iss 3, Pp 225-230 (2018)

مصطلحات موضوعية: electron paramagnetic resonance, 3C-SiC, electron density, divacancy, zero-field-splitting constant, dipole-dipole and spin-orbit interactions, Physics, QC1-999

وصف الملف: electronic resource

Relation: http://journal-spqeo.org.ua/n3_2018/P225-230abstr.html; https://doaj.org/toc/1560-8034; https://doaj.org/toc/1605-6582

URL الوصول: https://doaj.org/article/a6db6bc44b5040af8f315af30d38dc04

المؤلفون: Miao, Kevin C., Blanton, Joseph P., Anderson, Christopher P., Bourassa, Alexandre, Crook, Alexander L., Wolfowicz, Gary, Abe, Hiroshi, Ohshima, Takeshi, Awschalom, David D.

مصطلحات موضوعية: Quantum information, Quantum coherence, Silicon carbide, Divacancy, Qubit, Solid-state, Spintronics, Spin

Relation: https://doi.org/10.5281/zenodo.3975268; https://doi.org/10.5281/zenodo.3975269; oai:zenodo.org:3975269

الاتاحة: https://doi.org/10.5281/zenodo.3975269

المؤلفون: Min Luo, Bo-Lin Li, Dengfeng Li

المصدر: Nanomaterials; Volume 9; Issue 11; Pages: 1609

مصطلحات موضوعية: thermal transport, graphene, divacancy, extended line defect, nonequilibrium Green’s function

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/nano9111609

الاتاحة: https://doi.org/10.3390/nano9111609

المؤلفون: Quanguo Jiang, Jianfeng Zhang, Zhimin Ao, Huajie Huang, Haiyan He, Yuping Wu

المصدر: Frontiers in Chemistry, Vol 6 (2018)

مصطلحات موضوعية: graphene, divacancy, Mn-embedded, CO oxidation, first principles calculations, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.frontiersin.org/article/10.3389/fchem.2018.00187/full; https://doaj.org/toc/2296-2646

URL الوصول: https://doaj.org/article/dd64f4334b0f44fc93e6ef8c9a166599

المؤلفون: Ali, Jouni, Victor, Malherbe, Bastien, Mamdy, Thomas, Thery, Mathieu, Sicre, Dimitri, Soussan, Vincent, Lorquet, Paoli Serge, De, Jean-Marc, Belloir, Valerian, Lalucaa, Cédric, Virmontois, Gilles, Gasiot, Vincent, Goiffon

المساهمون: Centre National d'Études Spatiales Toulouse (CNES), STMicroelectronics Crolles (ST-CROLLES), Institut Supérieur de l'Aéronautique et de l'Espace (ISAE-SUPAERO), IEEE Transactions on Nuclear Science

المصدر: ISSN: 0018-9499.

مصطلحات موضوعية: phonon-assisted tunneling (PAT), Poole–Frenkel (PF), proton, single-photon avalanche diode (SPAD), Band-to-band tunneling (BTBT), CMOS, dark count rate (DCR), defect clusters, displacement damage dose (DDD), divacancy, irradiation, isochronal annealing, P-V center, [SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processing

Relation: hal-04280432; https://hal.science/hal-04280432; https://hal.science/hal-04280432/document; https://hal.science/hal-04280432/file/Jouni_14408.pdf

الاتاحة: https://hal.science/hal-04280432
https://hal.science/hal-04280432/document
https://hal.science/hal-04280432/file/Jouni_14408.pdf

المؤلفون: Kras’ko, M. M., Kolosiuk, A. G., Voitovych, V. V., Povarchuk, V. Yu., Roguts’kyi, I. S.

المصدر: Ukrainian Journal of Physics; Vol. 63 No. 12 (2018); 1095 ; Український фізичний журнал; Том 63 № 12 (2018); 1095 ; 2071-0194 ; 2071-0186 ; 10.15407/ujpe63.12

مصطلحات موضوعية: гамма-опромiнення, дефект дивакансiя-кисень, час життя носiїв заряду, кремнiй, gamma irradiation, divacancy-oxygen defect, charge carrier lifetime, silicon

وصف الملف: application/pdf

Relation: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018178/682; https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018178/683; https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018178

الاتاحة: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018178
https://doi.org/10.15407/ujpe63.12.1095

المؤلفون: A. P. Dolgolenko

المصدر: Âderna Fìzika ta Energetika, Vol 15, Iss 2, Pp 148-153 (2014)

مصطلحات موضوعية: silicon, fast neutrons, divacancy, carrier mobility., Atomic physics. Constitution and properties of matter, QC170-197

وصف الملف: electronic resource

Relation: http://jnpae.kinr.kiev.ua/15.2/Articles_PDF/jnpae-2014-15-0148-Dolgolenko.pdf; https://doaj.org/toc/1818-331X; https://doaj.org/toc/2074-0565

URL الوصول: https://doaj.org/article/8404854f050e442b95298c31d6014e27

المؤلفون: A. P. Dolgolenko

المصدر: Âderna Fìzika ta Energetika, Vol 14, Iss 4, Pp 377-383 (2013)

مصطلحات موضوعية: silicon, germanium, fast neutron, divacancy, Atomic physics. Constitution and properties of matter, QC170-197

وصف الملف: electronic resource

Relation: http://jnpae.kinr.kiev.ua/14.4/Articles_Pdf/jnpae-2013-14-0377-Dolgolenko.pdf; https://doaj.org/toc/1818-331X; https://doaj.org/toc/2074-0565

URL الوصول: https://doaj.org/article/99ba3815ad55473cab79a6cdaebaee00

المؤلفون: O. P. Dolgolenko

المصدر: Âderna Fìzika ta Energetika, Vol 14, Iss 2, Pp 163-171 (2013)

مصطلحات موضوعية: silicon, germanium, fast neutron, divacancy, Atomic physics. Constitution and properties of matter, QC170-197

وصف الملف: electronic resource

Relation: http://jnpae.kinr.kiev.ua/14.2/Articles_PDF/jnpae-2013-14-0163-Dolgolenko.pdf; https://doaj.org/toc/1818-331X; https://doaj.org/toc/2074-0565

URL الوصول: https://doaj.org/article/b923a474e9f149beba51b6c91da3db31

المؤلفون: Wood, D, Hall, DJ, Gow, J, Skottfelt, J, Murray, NJ, Stefanov, K, Holland, AD

المصدر: IEEE Transactions on Nuclear Science , 64 (11) pp. 2814-2821. (2017)

مصطلحات موضوعية: Divacancy, CCD, p-channel, defect, pocket pumping, radiation damage, Carbon, trap pumping

وصف الملف: text

Relation: https://discovery.ucl.ac.uk/id/eprint/10038977/1/DW_TNS_final.pdf; https://discovery.ucl.ac.uk/id/eprint/10038977/

الاتاحة: https://discovery.ucl.ac.uk/id/eprint/10038977/1/DW_TNS_final.pdf
https://discovery.ucl.ac.uk/id/eprint/10038977/