المؤلفون: Seung Kyu Kim, Johyeon Kim, Gunhee Choi, Kee-Won Kwon, Jongwook Jeon

المصدر: IEEE Access, Vol 13, Pp 5396-5405 (2025)

مصطلحات موضوعية: Complementary FET (CFET), design-technology co-optimization (DTCO), metal source-drain, middle-of-line (MOL), middle VIA (MV), wrap around contact (WAC), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10816635/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/97c6e9a2f1f24d91ba9b8fccf11596b0

المؤلفون: Shih-Nung Chen, Shi-Hao Chen

المصدر: IEEE Access, Vol 12, Pp 6532-6545 (2024)

مصطلحات موضوعية: Generative adversarial network (GAN), wafer acceptance test (WAT), chip probe (CP), design-technology co-optimization (DTCO), virtual silicon data, electronic design automation (EDA), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10385041/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/ab26c186a55e4b3588a1a5193f806f8e

المؤلفون: Chanwoo Park, Hyunbo Cho, Jungwoo Lee

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 495-501 (2024)

مصطلحات موضوعية: Neural compact models, interpretability, latent vector interpolation, design-technology co-optimization, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10547540/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/8e362d1f2b75420297ce1ef9640ab19f

المؤلفون: R. Saligram, A. Raychowdhury, Suman Datta

المصدر: Chip, Vol 3, Iss 1, Pp 100082- (2024)

مصطلحات موضوعية: Cryogenic CMOS, Design technology co-optimization, High performance computing, Parameter variation, Threshold voltage engineering, Cryogenic Memories, Information technology, T58.5-58.64

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S270947232300045X; https://doaj.org/toc/2709-4723

URL الوصول: https://doaj.org/article/1dc7919b5ada4629908c4fcdea9bae84

المؤلفون: Shixin Li, Zhenhua Wu

المصدر: Nanomaterials; Volume 13; Issue 11; Pages: 1709

مصطلحات موضوعية: CMOS, FinFET, Silicon-On-Insulator (SOI), technology computer-aided design (TCAD), Design Technology Co-optimization (DTCO)

وصف الملف: application/pdf

Relation: Nanoelectronics, Nanosensors and Devices; https://dx.doi.org/10.3390/nano13111709

الاتاحة: https://doi.org/10.3390/nano13111709

المؤلفون: Sisto, Giuliano, Zografos, Odysseas, Chehab, Bilal, Kakarla, N., Xiang, Yang, Milojevic, Dragomir, Weckx, Pieter, Hellings, Geert, Ryckaert, Julien

المصدر: IEEE transactions on very large scale integration (VLSI) systems, 30 (10

مصطلحات موضوعية: Technologie informatique hardware, Informatique appliquée logiciel, Electronique et électrotechnique, Advanced sub-3-nm nodes design, CMOS scaling, design-technology co-optimization (DTCO), forksheet (FS)

وصف الملف: 1 full-text file(s): application/octet-stream

Relation: uri/info:doi/10.1109/TVLSI.2022.3190080; uri/info:scp/85135218901; https://dipot.ulb.ac.be/dspace/bitstream/2013/351858/3/9834262; http://hdl.handle.net/2013/ULB-DIPOT:oai:dipot.ulb.ac.be:2013/351858

الاتاحة: http://hdl.handle.net/2013/ULB-DIPOT:oai:dipot.ulb.ac.be:2013/351858
https://dipot.ulb.ac.be/dspace/bitstream/2013/351858/3/9834262

المؤلفون: Ho, Chia-Tung

مصطلحات موضوعية: Computer engineering, Complementary-FET (CFET), Design Technology Co-Optimization, Machine Learning, SMT (Satisfiability Modulo theories), Standard Cell Synthesis, System Technology Co-Optimization

وصف الملف: application/pdf

URL الوصول: https://escholarship.org/uc/item/2ts172zd

المؤلفون: Wenzhan Zhou, Hung-Wen Chao, Yu Zhang

المصدر: Journal of Microelectronic Manufacturing, Vol 3, Iss 1 (2020)

مصطلحات موضوعية: design for manufacturing (dfm), design friendly manufacturing, euv lithography, source mask optimization (smo), design technology co-optimization (dtco), process window, process variation, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Production capacity. Manufacturing capacity, T58.7-58.8

وصف الملف: electronic resource

Relation: http://www.jommpublish.org/p/46/; https://doaj.org/toc/2578-3769

URL الوصول: https://doaj.org/article/d1adc96e487945ccabdfee4e2d1cb902

المؤلفون: Jo, Kyeongrok, Ahn, Seyong, Do, Jungho, Song, Taejoong, Kim, Taewhan, Choi, Kyumyung

المساهمون: Kim, Taewhan

مصطلحات موضوعية: Cell architectures, design rules (DRs), design technology co-optimization (DTCO), layout, standard cells

Relation: IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol.27 No.8, pp.1933-1946; https://hdl.handle.net/10371/198185; 000477733400020; 2-s2.0-85069975161; 94405

الاتاحة: https://hdl.handle.net/10371/198185
https://doi.org/10.1109/TVLSI.2019.2910579

المؤلفون: Pan, Chenyun

Thesis Advisors: Naeemi, Azad

مصطلحات موضوعية: Device, Interconnect, Graphene, Tunneling FET, Package, Emerging technology, Process variation, 3D integration, Heterogeneous integration, Design technology co-optimization

وصف الملف: application/pdf

الاتاحة: http://hdl.handle.net/1853/53931

المؤلفون: Abou Ghaida, Rani

مصطلحات موضوعية: Electrical engineering, Computer engineering, Design-Assisted Technology Scaling, Design Enablement, Design for Manufacturability, Design Technology Co-Optimization, Technology Assessment, Technology Development

وصف الملف: application/pdf

URL الوصول: https://escholarship.org/uc/item/3js0916k

المؤلفون: Berthelon, Rémy

Thesis Advisors: Toulouse 3, Claverie, Alain

مصطلحات موضوعية: Déformation, Contrainte, FDSOI, SiGe, Effets géométriques, Co-optimisation dessin/technologie, 3D séquentielle, Strain, Stress, Local layout-effects, Design-technology co-optimization

الاتاحة: http://www.theses.fr/2018TOU30066/document

المؤلفون: Berthelon, Rémy

المساهمون: Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Paul Sabatier - Toulouse III, Alain Claverie, Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)

المصدر: Micro and nanotechnologies/Microelectronics. Université Paul Sabatier-Toulouse III, 2018. English. ⟨NNT : 2018TOU30066⟩

مصطلحات موضوعية: Design-technology co-optimization, SiGe, Contrainte, Effets géométriques, Co-optimisation dessin/technologie, Local layout-effects, Déformation, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Stress, 3D séquentielle, FDSOI, Strain

URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a0b7f4ad036817cde3f7e5fb2db0f5c6
https://theses.hal.science/tel-02132872/document

المؤلفون: Wang, Xingsheng, Reid, Dave, Wang, Liping, Millar, Campbell, Burenkov, Alex, Evanschitzky, Peter, Baer, Eberhard, Lorenz, Juergen, Asenov, Asen

مصطلحات موضوعية: design technology co-optimization, FinFET, process, process variation, SRAM, statistical variability

Relation: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2016; International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016; SUPERTHEME; REMINDER; 318458; 687931; https://publica.fraunhofer.de/handle/publica/393481

الاتاحة: https://publica.fraunhofer.de/handle/publica/393481
https://doi.org/10.1109/SISPAD.2016.7605207

المؤلفون: Berthelon, Rémy

المساهمون: Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Paul Sabatier - Toulouse III, Alain Claverie

المصدر: https://theses.hal.science/tel-02132872 ; Micro and nanotechnologies/Microelectronics. Université Paul Sabatier - Toulouse III, 2018. English. ⟨NNT : 2018TOU30066⟩.

مصطلحات موضوعية: Strain, Stress, FDSOI, SiGe, Local layout-effects, Design-technology co-optimization, Déformation, Contrainte, Effets géométriques, Co-optimisation dessin/technologie, 3D séquentielle, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

Relation: NNT: 2018TOU30066; tel-02132872; https://theses.hal.science/tel-02132872; https://theses.hal.science/tel-02132872/document; https://theses.hal.science/tel-02132872/file/2018TOU30066b.pdf

الاتاحة: https://theses.hal.science/tel-02132872
https://theses.hal.science/tel-02132872/document
https://theses.hal.science/tel-02132872/file/2018TOU30066b.pdf

المؤلفون: Du, Yuelin

المساهمون: Wong, Martin D.F., Rutenbar, Robin A., Chen, Deming, Li, Xiuling, Topaloglu, Rasit O.

مصطلحات موضوعية: Electronic Design Automation (EDA), Design for Manufacturability (DFM), Design-Technology Co-Optimization (DTCO), Fin Field Effect Transisto (FinFET), Hybrid lithography, Self-Aligned Double Patterning (SADP), Directed Self-Assembly (DSA), Extreme Ultraviolet Lithography (EUVL), Electron Beam Lithography (EBL), 1D design

Relation: http://hdl.handle.net/2142/50745

الاتاحة: http://hdl.handle.net/2142/50745

المؤلفون: Yasmine Badra, Ko-wei Mab, Puneet Guptaa

المساهمون: The Pennsylvania State University CiteSeerX Archives

المصدر: http://nanocad.ee.ucla.edu/pub/Main/Publications/C78_paper.pdf.

مصطلحات موضوعية: Design Rules, Manufacturability, Bad Patterns, Hot Spots, Design for Manufacturing, Design Technology Co-optimization (DTCO, Layouts

وصف الملف: application/pdf

Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.689.1656; http://nanocad.ee.ucla.edu/pub/Main/Publications/C78_paper.pdf

الاتاحة: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.689.1656
http://nanocad.ee.ucla.edu/pub/Main/Publications/C78_paper.pdf

المؤلفون: Lars Liebmann, Larry Pileggi, Jason Hibbeler, Vyacheslav Rovner, Tejas Jhaveri, Greg Northrop

المساهمون: The Pennsylvania State University CiteSeerX Archives

المصدر: http://216-207-44-57.dia.static.qwest.net/upload/File/Publications/Simplify_to_Survive,_Prescriptive_Layouts.pdf.

مصطلحات موضوعية: Design for Manufacturability (DfM, template-based design, design-technology co-optimization (DTCO, predictably composable

وصف الملف: application/pdf

Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.469.6945; http://216-207-44-57.dia.static.qwest.net/upload/File/Publications/Simplify_to_Survive,_Prescriptive_Layouts.pdf

الاتاحة: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.469.6945
http://216-207-44-57.dia.static.qwest.net/upload/File/Publications/Simplify_to_Survive,_Prescriptive_Layouts.pdf

المؤلفون: Madapusi Srinivas Prasad, Divya

المساهمون: Naeemi, Azad, Davis, Jeffrey A., Bakir, Muhannad S., Catthoor, Francky, Sinha, Saurabh, School of Electrical and Computer Engineering, College of Engineering, Electrical and Computer Engineering

مصطلحات موضوعية: On-chip interconnect, Design-technology-co-optimization, Physical design, Rent's rule, System-level modeling, Performance model

وصف الملف: application/pdf

Relation: http://hdl.handle.net/1853/61606

الاتاحة: http://hdl.handle.net/1853/61606

المؤلفون: Xiao, Zigang

المساهمون: Wong, Martin D.F., Rutenbar, Rob, Chen, Deming, Li, Xiuling

مصطلحات موضوعية: Electronic Design Automation, Compute-aided Design, Lithography, Self-aligned Double Patterning, Directed Self-Assembly, Machine Learning, Design-Technology Co-optimization

Relation: http://hdl.handle.net/2142/88991

الاتاحة: http://hdl.handle.net/2142/88991