المؤلفون: Marzegalli, Anna, Montalenti, Francesco, Scalise, Emilio

المساهمون: Marzegalli, A, Montalenti, F, Scalise, E

مصطلحات موضوعية: Extended Defects in Si and Ge, Density functional theory, hexagonal diamond SiGe, electronic band structure, SiGe quantum wells

وصف الملف: STAMPA

Relation: info:eu-repo/semantics/altIdentifier/pmid/39311395; info:eu-repo/semantics/altIdentifier/wos/WOS:001317796800001; journal:NANOSCALE HORIZONS; https://hdl.handle.net/10281/517399

الاتاحة: https://hdl.handle.net/10281/517399
https://doi.org/10.1039/d4nh00355a

المؤلفون: Emilio Scalise, Fabrizio Rovaris, Anna Marzegalli

المساهمون: Scalise, E, Rovaris, F, Marzegalli, A

مصطلحات موضوعية: Hexagonal SiGe, Nanoindentation, DFT, Defects in Si and Ge

Relation: 15th International Conference on Physics of Advanced Materials (ICPAM-15); https://hdl.handle.net/10281/452118

الاتاحة: https://hdl.handle.net/10281/452118

المؤلفون: Koun Shirai, Takao Abe, Toru Takahashi, 白井 光雲, 阿部 孝夫, 高橋 徹

المصدر: JSAP Annual Meetings Extended Abstracts. 2018, :3452

المؤلفون: Koun Shirai, Takao Abe, Toru Takahashi, 白井 光雲, 阿部 孝夫, 高橋 徹

المصدر: JSAP Annual Meetings Extended Abstracts. 2018, :3733

المؤلفون: Koun Shirai, Takao Abe, Toru Takahashi, 白井 光雲, 阿部 孝夫, 高橋 徹

المصدر: JSAP Annual Meetings Extended Abstracts. 2018, :3734

المؤلفون: Janavičius, Arvydas Juozas, Balakauskas, Saulius, Purlys, Romaldas

المصدر: Advanced materials and technologies : book of abstracts of the 13-th international conference-school, Palanga, Lithuania, 27-31 August 2011, Kaunas : Technologija, 2011, p. 129 ; ISSN 1822-7759

مصطلحات موضوعية: Point defects in Si, Metastable vacancies, Superdiffusion of impurities

Relation: http://vu.lvb.lt/VU:ELABAPDB4400014&prefLang=en_US

الاتاحة: http://vu.lvb.lt/VU:ELABAPDB4400014&prefLang=en_US

المؤلفون: Wilking, Svenja, Engelhardt, Josh, Ebert, Sebastian, Beckh, Cornelius, Herguth, Axel, Hahn, Giso

مصطلحات موضوعية: WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY, Defects, Silicon (Si), Regeneration, Hydrogen, Boron-Oxygen, ddc:530, Silicon Solar Cell Improvements

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8742c894f7dbb024b0907b19997d22ab

المؤلفون: Brusa RS, Karwasz GP, Tiengo N, Zecca A, CORNI, Federico, NOBILI, Carlo Emanuele, OTTAVIANI, Giampiero, TONINI, Rita

المساهمون: Jean, YC, Eldrup, M, Schrader, DM, West, RN, Brusa, R, Karwasz, Gp, Tiengo, N, Zecca, A, Corni, Federico, Nobili, Carlo Emanuele, Ottaviani, Giampiero, Tonini, Rita

مصطلحات موضوعية: helium implantation, bubble precursor, defects in Si

وصف الملف: STAMPA

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000071768100182; ispartofbook:N/A; N/A; volume:255-2; firstpage:665; lastpage:667; numberofpages:3; http://hdl.handle.net/11380/8616; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-5244340187

الاتاحة: http://hdl.handle.net/11380/8616
https://doi.org/10.4028/www.scientific.net/MSF.255-257.665

المؤلفون: Meyer, W.E. (Walter Ernst)

Thesis Advisors: Goodman, S.A. (Stewart Alexander), Auret, F.D. (Francois Danie), wmeyer@up.ac.za

مصطلحات موضوعية: Radiation, Defects in si, Induced, Gaas, Gan, Digital dlts studies, UCTD

الاتاحة: http://hdl.handle.net/2263/25602
http://upetd.up.ac.za/thesis/available/etd-06182007-143820/

المؤلفون: Antonio Zecca, G. P. Karwasz, N Tiengo, Carlo Emanuele Nobili, Giampiero Ottaviani, Federico Corni, Rita Tonini, R. S. Brusa

المصدر: Scopus-Elsevier

مصطلحات موضوعية: helium implantation, bubble precursors, defects in Si, Materials science, Silicon, business.industry, Mechanical Engineering, Radiochemistry, chemistry.chemical_element, Condensed Matter Physics, Positron, chemistry, Mechanics of Materials, Optoelectronics, General Materials Science, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02e8e33c9ebceb9ea102f0e4e7d95aa7
https://doi.org/10.4028/www.scientific.net/msf.255-257.665

المؤلفون: Brusa RS, Karwasz GP, Zecca A, CORNI, Federico, TONINI, Rita, OTTAVIANI, Giampiero

المساهمون: Brusa, R, Karwasz, Gp, Zecca, A, Corni, Federico, Tonini, Rita, Ottaviani, Giampiero

مصطلحات موضوعية: He, bubble, cavitie, positron, defects in Si

وصف الملف: STAMPA

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000082816400055; volume:70; firstpage:385; lastpage:389; numberofpages:5; journal:DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA; http://hdl.handle.net/11380/7605; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-0032661208

الاتاحة: http://hdl.handle.net/11380/7605
https://doi.org/10.4028/www.scientific.net/SSP.69-70.385

المؤلفون: Teimuraz Mchedlidze

المساهمون: The Pennsylvania State University CiteSeerX Archives

المصدر: http://www.scientific.net/SSP.108-109.379.pdf.

مصطلحات موضوعية: Defects in Si, iron-containing defects, iron-donor complexes, hydrogen-related defects

وصف الملف: application/pdf

Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.429.2679; http://www.scientific.net/SSP.108-109.379.pdf

الاتاحة: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.429.2679
http://www.scientific.net/SSP.108-109.379.pdf

المؤلفون: Deenapanray, Prakash, Nyamhere, Cloud, Auret, Francois D, Farlow, F C

المصدر: Physica B

مصطلحات موضوعية: Keywords: Annealing, Crystal growth from melt, Epitaxial growth, Gallium, Reaction kinetics, Czochralski Si, Gallium doping, Laplace DLTS, Point defects Czochralski Si, Defects

Relation: http://hdl.handle.net/1885/17717; https://openresearch-repository.anu.edu.au/bitstream/1885/17717/5/Deenapanray%2B10.pdf.jpg; https://openresearch-repository.anu.edu.au/bitstream/1885/17717/7/01_Deenapanray_Characterization_of_defects_2006.pdf.jpg

الاتاحة: http://hdl.handle.net/1885/17717
https://doi.org/10.1016/j.physb.2005.12.043
https://openresearch-repository.anu.edu.au/bitstream/1885/17717/5/Deenapanray%2B10.pdf.jpg
https://openresearch-repository.anu.edu.au/bitstream/1885/17717/7/01_Deenapanray_Characterization_of_defects_2006.pdf.jpg

المؤلفون: James Williams, C.E. Ascheron, Mladen Petravic, Jennifer Wong-Leung

المساهمون: J.S.Williams, R.G.Elliman and M.C.Ridgway

المصدر: ResearcherID

مصطلحات موضوعية: inorganic chemicals, Materials science, Silicon, Hydrogen, Annealing (metallurgy), Scanning electron microscope, Analytical chemistry, technology, industry, and agriculture, chemistry.chemical_element, equipment and supplies, complex mixtures, law.invention, Secondary Ion Mass Spectroscopy, Crystallography, stomatognathic diseases, chemistry, law, Electron microscope, defects in Si, ion bombardment

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5b8792884d893058888eb9197f78c01
https://www.bib.irb.hr/463184

المساهمون: Sargent, G

المصدر: Other Information: From 4. annual conference on effects of lithium doping on silicon solar cells; Pasadena, Calif. (29 Apr 1971). In Proceedings of the fourth annual conference on effects of lithium doping on silicon solar cells. UNCL. Orig. Receipt Date: 31-DEC-72

وصف الملف: Medium: X

URL الوصول: http://www.osti.gov/scitech/biblio/4661156

المساهمون: Goodman, Stewart Alexander, Auret, Francois Danie, Meyer, Walter Ernst

مصطلحات موضوعية: Radiation, Defects in si, Induced, Gaas, Gan, Digital dlts studies, UCTD

وصف الملف: application/pdf

Relation: Meyer, W 2007, Digital DLTS studies on radiation induced defects in Si, GaAs and GaN, PhD thesis, University of Pretoria, Pretoria, viewed yymmdd < http://hdl.handle.net/2263/25602 >; http://hdl.handle.net/2263/25602; http://upetd.up.ac.za/thesis/available/etd-06182007-143820/

الاتاحة: http://hdl.handle.net/2263/25602
http://upetd.up.ac.za/thesis/available/etd-06182007-143820/

المساهمون: Wilking, Svenja, Ebert, Sebastian, Beckh, Cornelius, Engelhardt, Josh, Herguth, Axel, Hahn, Giso

الاتاحة: http://data.europeana.eu/aggregation/europeana/2048441/item_SONYEZBL76FGAYEYXPWNKMYBVOMNJGYO

المؤلفون: Antonio Zecca, Federico Corni, Rita Tonini, Grzegorz P. Karwasz, Roberto S. Brusa, Giampiero Ottaviani

المصدر: Scopus-Elsevier

مصطلحات موضوعية: Materials science, Distribution (number theory), Silicon, He, Bubble, Positron beam, Radiochemistry, cavities, chemistry.chemical_element, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, bubbles, Positron, chemistry, defects in Si, positron, General Materials Science, Atomic physics

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d103b40f0eff8c00c8fb856b0361a7f6
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032661208&partnerID=MN8TOARS

المؤلفون: Scalise, E, Rovaris, F, Marzegalli, A, Emilio Scalise, Fabrizio Rovaris, Anna Marzegalli

مصطلحات الفهرس: Hexagonal SiGe, Nanoindentation, DFT, Defects in Si and Ge, info:eu-repo/semantics/conferenceObject

URL: https://hdl.handle.net/10281/452118
15th International Conference on Physics of Advanced Materials (ICPAM-15)

المؤلفون: Deenapanray, Prakash, Nyamhere, Cloud, Auret, Francois D, Farlow, F C

المصدر: Physica B

مصطلحات الفهرس: Keywords: Annealing; Crystal growth from melt; Epitaxial growth; Gallium; Reaction kinetics; Czochralski Si; Gallium doping; Laplace DLTS; Point defects Czochralski Si; Defects; Gallium doping; Laplace DLTS, Journal article

URL: http://hdl.handle.net/1885/17717