المؤلفون: Hong Wang, Xiaobing Yan, Xinlei Jia, Zichang Zhang, Chi-Hsiang Ho, Chao Lu, Yuanyuan Zhang, Tao Yang, Jianhui Zhao, Zhenyu Zhou, Mengliu Zhao, Deliang Ren

المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 464-467 (2018)

مصطلحات موضوعية: Graphene oxide quantum dots, charge trapping memory, data retention property, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8327580/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/2851be050d0c47979f0640f0e85427f2

المؤلفون: Wang, H., Yan, X., Jia, X., Zhang, Z., Ho, C.-H., Lu, C., Zhang, Y., Yang, T., Zhao, J., Zhou, Z., Zhao, M., Ren, D.

المساهمون: MATERIALS SCIENCE AND ENGINEERING

المصدر: Scopus OA2018

مصطلحات موضوعية: charge trapping memory, data retention property, Graphene oxide quantum dots

Relation: Wang, H., Yan, X., Jia, X., Zhang, Z., Ho, C.-H., Lu, C., Zhang, Y., Yang, T., Zhao, J., Zhou, Z., Zhao, M., Ren, D. (2018). A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory with Enhanced Memory Window and Data Retention. IEEE Journal of the Electron Devices Society 6 : 464-467. ScholarBank@NUS Repository. https://doi.org/10.1109/JEDS.2018.2820125; https://scholarbank.nus.edu.sg/handle/10635/210110

الاتاحة: https://scholarbank.nus.edu.sg/handle/10635/210110

المؤلفون: Xiaobing Yan, Mengliu Zhao, Deliang Ren, Zhenyu Zhou, Chao Lu, Hong Wang, Zichang Zhang, Chi-Hsiang Ho, Xinlei Jia, Jianhui Zhao, Yuanyuan Zhang, Tao Yang

المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 464-467 (2018)

مصطلحات موضوعية: Materials science, Graphene oxide quantum dots, Oxide, 02 engineering and technology, Trapping, 01 natural sciences, Capacitance, law.invention, chemistry.chemical_compound, law, 0103 physical sciences, Electrical and Electronic Engineering, 010302 applied physics, charge trapping memory, business.industry, Graphene, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Non-volatile memory, chemistry, Quantum dot, Logic gate, Optoelectronics, lcsh:Electrical engineering. Electronics. Nuclear engineering, data retention property, 0210 nano-technology, business, lcsh:TK1-9971, Biotechnology, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7772cdabfbeb54a7e962b354cf38744
https://doi.org/10.1109/jeds.2018.2820125