المؤلفون: Qiang Wang, Maolin Pan, Penghao Zhang, Luyu Wang, Yannan Yang, Xinling Xie, Hai Huang, Xin Hu, Min Xu

المصدر: IEEE Access, Vol 12, Pp 16089-16094 (2024)

مصطلحات موضوعية: AlGaN/GaN MIS-HEMTs, border traps, current collapse, plasma alternately treated gate dielectric, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10375390/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/04e1f1e0df6d4795934cd79e7a46f822

المؤلفون: Ye Liang, Jiachen Duan, Ping Zhang, Kain Lu Low, Jie Zhang, Wen Liu

المصدر: Nanomaterials, Vol 14, Iss 18, p 1529 (2024)

مصطلحات موضوعية: AlGaN/GaN MIS-HEMT, current collapse, trap states, energy level, trap density, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2079-4991/14/18/1529; https://doaj.org/toc/2079-4991

URL الوصول: https://doaj.org/article/d4346325ddf846e1a5a0cc9c223ab5d6

المؤلفون: A Arunraja, K Suresh, S Senthilnathan

المصدر: Materials Research Express, Vol 11, Iss 11, p 115901 (2024)

مصطلحات موضوعية: AlGaN/GaN interface, Johnson figure of merit, surface passivation, current collapse, Materials of engineering and construction. Mechanics of materials, TA401-492, Chemical technology, TP1-1185

Relation: https://doi.org/10.1088/2053-1591/ad8861; https://doaj.org/toc/2053-1591; https://doaj.org/article/5b92f638d85b48cfb9012a5ecee56890

الاتاحة: https://doi.org/10.1088/2053-1591/ad8861
https://doaj.org/article/5b92f638d85b48cfb9012a5ecee56890

المؤلفون: Lopes, Inês Cristina Pereira

مصطلحات موضوعية: RF power amplifier, Characterization, RF transistor, GaN HEMT, Current collapse, Pulsed I/V measurements, Pulsed measurement systems, Double pulse technique, Time constants

وصف الملف: application/pdf

الاتاحة: http://hdl.handle.net/10773/34983

المؤلفون: Ran Ye, Xiaolong Cai, Chenglin Du, Haijun Liu, Yu Zhang, Xiangyang Duan, Jiejie Zhu

المصدر: IEEE Access, Vol 10, Pp 21759-21773 (2022)

مصطلحات موضوعية: GaN HEMT, trapping effects, current collapse, suppression methods, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9665813/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/e0fbe01cf4444cae942651d84453b8ed

المؤلفون: Dai-Jie Lin, Jhih-Yuan Yang, Chih-Kang Chang, Jian-Jang Huang

المصدر: IEEE Journal of the Electron Devices Society, Vol 10, Pp 59-64 (2022)

مصطلحات موضوعية: GaN, high-electron mobility transistors (HEMTs), dual-gate structure, current collapse, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9634172/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/b6f9aa28ceb54898907200cd5ee12d2d

المؤلفون: Qiang Ma, Shiyo Urano, Atsushi Tanaka, Yuji Ando, Akio Wakejima

المصدر: IEEE Journal of the Electron Devices Society, Vol 10, Pp 297-300 (2022)

مصطلحات موضوعية: GaN, HEMT, electroluminescence, electron trap, current collapse, electric field, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9745144/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/4204a559c40145aa9509b775883f1dc1

المؤلفون: Jingxiong Chen, Jian Qin, Wenxuan Xiao, Hong Wang

المصدر: IEEE Journal of the Electron Devices Society, Vol 10, Pp 356-360 (2022)

مصطلحات موضوعية: AlGaN/GaN HEMT, N₂O plasma treatment, current collapse, high temperature annealing, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9762333/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/329c47f2326549d481c83b1474aa03c6

المؤلفون: Yu Zhang, Lihua Xu, Yitian Gu, Haowen Guo, Huaxing Jiang, Kei May Lau, Xinbo Zou

المصدر: IEEE Journal of the Electron Devices Society, Vol 10, Pp 540-546 (2022)

مصطلحات موضوعية: Current collapse, dynamic characteristics, gallium nitride (GaN), in-situ SiNₓ, metal insulator semiconductor high electron mobility transistors (MISHEMTs), pulsed I-V measurement, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9825733/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/ddd1e7abb61943f79eb6db1a29c14367

المؤلفون: Gao, Z, De Santi, C, Rampazzo, F, Saro, M, Fornasier, M, Meneghesso, G, Meneghini, M, Chini, A, Verzellesi, G, Zanoni, E

المساهمون: Gao, Z, De Santi, C, Rampazzo, F, Saro, M, Fornasier, M, Meneghesso, G, Meneghini, M, Chini, A, Verzellesi, G, Zanoni, E

مصطلحات موضوعية: Current collapse, deep level, GaN HEMT, GaN reliability, kink effect

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:001103666200001; volume:70; issue:12; firstpage:6256; lastpage:6261; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; https://hdl.handle.net/11380/1328286

الاتاحة: https://hdl.handle.net/11380/1328286
https://doi.org/10.1109/TED.2023.3326781

المؤلفون: Millesimo, M., Borga, M., Valentini, L., Bakeroot, Benoit, Posthuma, N., Vohra, A., Decoutere, S., Fiegna, C., Tallarico, A. N.

المصدر: IEEE TRANSACTIONS ON ELECTRON DEVICES ; ISSN: 0018-9383 ; ISSN: 1557-9646

مصطلحات موضوعية: Technology and Engineering, AlGaN/GaN HEMT, back-gating current deep-level transient spectroscopy, (I-DLTS), buffer trapping, R(ON )drift, stretched exponential, ALGAN/GAN HEMTS, NONEXPONENTIAL TRANSIENTS, CURRENT COLLAPSE, CARBON, IMPACT, MECHANISMS, BREAKDOWN, VOLTAGE, STATES, MODEL

وصف الملف: application/pdf

Relation: https://biblio.ugent.be/publication/01HTHPRNCYY2FVJ5SCQEP9Q7A6; http://doi.org/10.1109/TED.2023.3304272; https://biblio.ugent.be/publication/01HTHPRNCYY2FVJ5SCQEP9Q7A6/file/01HTHPS69NH671AR6Q6S5TYFQV

الاتاحة: https://biblio.ugent.be/publication/01HTHPRNCYY2FVJ5SCQEP9Q7A6
http://hdl.handle.net/1854/LU-01HTHPRNCYY2FVJ5SCQEP9Q7A6
https://doi.org/10.1109/TED.2023.3304272
https://biblio.ugent.be/publication/01HTHPRNCYY2FVJ5SCQEP9Q7A6/file/01HTHPS69NH671AR6Q6S5TYFQV

المؤلفون: Penghao Zhang, Luyu Wang, Kaiyue Zhu, Qiang Wang, Maolin Pan, Ziqiang Huang, Yannan Yang, Xinling Xie, Hai Huang, Xin Hu, Saisheng Xu, Min Xu, Chen Wang, Chunlei Wu, David Wei Zhang

المصدر: Micromachines; Volume 14; Issue 8; Pages: 1523

مصطلحات موضوعية: GaN, MIS-HEMTs, buffer layer, SiC substrate, current collapse

وصف الملف: application/pdf

Relation: D：Materials and Processing; https://dx.doi.org/10.3390/mi14081523

الاتاحة: https://doi.org/10.3390/mi14081523

المؤلفون: Yannan Yang, Rong Fan, Penghao Zhang, Luyu Wang, Maolin Pan, Qiang Wang, Xinling Xie, Saisheng Xu, Chen Wang, Chunlei Wu, Min Xu, Jian Jin, David Wei Zhang

المصدر: Micromachines; Volume 14; Issue 7; Pages: 1278

مصطلحات موضوعية: AlGaN/GaN, in situ H-radical treatment, C–V frequency dispersion, pulse-mode stress, interface traps, MIS-HEMTs, current collapse, dynamic on-resistance

وصف الملف: application/pdf

Relation: D1: Semiconductor Devices; https://dx.doi.org/10.3390/mi14071278

الاتاحة: https://doi.org/10.3390/mi14071278

المؤلفون: Martin Doublet, Nicolas Defrance, Etienne Okada, Loris Pace, Thierry Duquesne, Bouyssou Emilien, Arnaud Yvon, Nadir Idir, Jean-Claude De Jaeger

المصدر: Electronics; Volume 12; Issue 9; Pages: 2007

مصطلحات موضوعية: gallium nitride (GaN), diode, dynamic on-resistance (R ON ), current collapse, power electronics, Arrhenius, origins of defects

وصف الملف: application/pdf

Relation: Semiconductor Devices; https://dx.doi.org/10.3390/electronics12092007

الاتاحة: https://doi.org/10.3390/electronics12092007

المؤلفون: Censong Liu, Jie Wang, Zhanfei Chen, Jun Liu, Jiangtao Su

المصدر: Micromachines; Volume 14; Issue 2; Pages: 305

مصطلحات موضوعية: AlGaN/GaN HEMTs, threading dislocations, current collapse, gate leakage current, modeling

وصف الملف: application/pdf

Relation: D1: Semiconductor Devices; https://dx.doi.org/10.3390/mi14020305

الاتاحة: https://doi.org/10.3390/mi14020305

المؤلفون: Peiran Wang, Chenkai Deng, Hongyu Cheng, Weichih Cheng, Fangzhou Du, Chuying Tang, Chunqi Geng, Nick Tao, Qing Wang, Hongyu Yu

المصدر: Crystals; Volume 13; Issue 1; Pages: 110

مصطلحات موضوعية: AlGaN/GaN high-electron mobility transistors (HEMTs), floating field plate (FFP), breakdown voltage, current collapse, frequency response, TCAD

وصف الملف: application/pdf

Relation: Materials for Energy Applications; https://dx.doi.org/10.3390/cryst13010110

الاتاحة: https://doi.org/10.3390/cryst13010110

المؤلفون: Xuanlin Li, Jie Xu, Weijing Liu

المصدر: Materials Research Express, Vol 10, Iss 5, p 055901 (2023)

مصطلحات موضوعية: GaN HEMT, current collapse, hot electron effect, switching performance, TCAD simulation, Materials of engineering and construction. Mechanics of materials, TA401-492, Chemical technology, TP1-1185

Relation: https://doi.org/10.1088/2053-1591/acd2aa; https://doaj.org/toc/2053-1591; https://doaj.org/article/fb6e0cd1015044c2a25c9ed533827720

الاتاحة: https://doi.org/10.1088/2053-1591/acd2aa
https://doaj.org/article/fb6e0cd1015044c2a25c9ed533827720

المؤلفون: Skarolek, Pavel, Lettl, Jiří

المساهمون: Pinker, Jiří

مصطلحات موضوعية: GaN, proud-kolaps, 3-fázový měnič, PMSM, current-collapse, 3-phase inverter

وصف الملف: 5 s.; application/pdf

Relation: 2022 International Conference on Applied Electronics: Pilsen, 6th – 7th September 2022, Czech Republic, p. 147-152.; http://hdl.handle.net/11025/49870

الاتاحة: http://hdl.handle.net/11025/49870

المؤلفون: Ji-Xuan Yang, Dai-Jie Lin, Yuh-Renn Wu, Jian-Jang Huang

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 557-563 (2021)

مصطلحات موضوعية: GaN, high-electron mobility transistors (HEMTs), current collapse, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9426907/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/df95df06842e4ff19b9d891c6900f81f

المؤلفون: Saro, Marco, de Pieri, Francesco, Carlotto, Andrea, Fornasier, Mirko, Rampazzo, Fabiana, De Santi, Carlo, Meneghesso, Gaudenzio, Meneghini, Matteo, Zanoni, Enrico, Bisi, Davide, Guidry, Matthew, Keller, Stacia, Mishra, Umesh

المساهمون: Saro, Marco, de Pieri, Francesco, Carlotto, Andrea, Fornasier, Mirko, Rampazzo, Fabiana, De Santi, Carlo, Meneghesso, Gaudenzio, Meneghini, Matteo, Zanoni, Enrico, Bisi, Davide, Guidry, Matthew, Keller, Stacia, Mishra, Umesh

مصطلحات موضوعية: Current collapse, Deep level, HEMT, N-Polar-GaN, Reliability

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:001229691100155; ispartofbook:IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2024 PROCEEDINGS; IEEE International Reliability Physics Symposium (IRPS 2024); serie:IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS; https://hdl.handle.net/11577/3523189; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85194059433

الاتاحة: https://hdl.handle.net/11577/3523189
https://doi.org/10.1109/irps48228.2024.10529479