المؤلفون: Kravchenko, Vladimir M., Malyutina-Bronskaya, Victoria V., Kuzmitskaya, Hanna S., Nestsiaronak, Anton V.

المصدر: Modern Electronic Materials, 10((2)), 85-90, (2024-07-02)

مصطلحات موضوعية: ITO, copper metallization, solar elements, contact resistivity

Relation: https://doi.org/10.1016/j.solener.2022.03.065; https://doi.org/10.1108/CW-10-2013-0038; https://doi.org/10.1016/j.egypro.2012.07.050; https://doi.org/10.1007/s13391-019-00134-x; https://doi.org/10.1155/2013/183812; https://doi.org/10.1002/pip.2221; https://doi.org/10.1016/j.solmat.2021.110993; https://doi.org/10.1016/S0026-2714(00)00227-4; https://doi.org/10.3390/ma7021318; https://doi.org/10.1002/pip.3792; https://doi.org/10.4229/28thEUPVSEC2013-2AO.2.1; https://doi.org/10.1016/S0927-0248(02)00049-1; https://doi.org/10.1134/1.1507271; https://doi.org/10.1016/j.egypro.2015.03.292; https://doi.org/10.1088/1361-6463/ab9c6a; https://doi.org/10.1063/1.4937224; https://doi.org/10.1149/1.1860511; https://doi.org/10.1016/j.apsusc.2009.04.001; https://doi.org/10.1007/s10854-020-03941-3; https://doi.org/10.1016/j.solmat.2015.09.033; https://doi.org/10.1109/JPHOTOV.2014.2321663; https://doi.org/10.1063/1.1660931; https://doi.org/10.1016/j.sna.2006.01.023; https://doi.org/10.1364/AO.35.001566; https://doi.org/10.1063/1.1923612; https://doi.org/10.1021/acsami.3c17923; https://doi.org/10.33619/2414-2948/79/48; https://doi.org/10.7567/JJAP.57.08RB13; https://doi.org/10.1007/978-3-540-75997-3_221; https://doi.org/10.3897/j.moem.10.2.129762; oai:zenodo.org:12703348

الاتاحة: https://doi.org/10.3897/j.moem.10.2.129762

المؤلفون: Lachowicz Agata, Badel Nicolas, Barrou Alexis, Barth Vincent, Harrison Samuel, Frasson Nicola, Galiazzo Marco, Cohen Natali, Cohen Eyal, Zhao Jun, Paviet-Salomon Bertrand, Ballif Christophe

المصدر: EPJ Photovoltaics, Vol 15, p 11 (2024)

مصطلحات موضوعية: heterojunction solar cells, copper metallization, plating, module stability, pattern transfer printing, electrodeposition, Renewable energy sources, TJ807-830

Relation: https://www.epj-pv.org/articles/epjpv/full_html/2024/01/pv230062/pv230062.html; https://doaj.org/toc/2105-0716; https://doaj.org/article/7e92d6ca08974380ab1d72cf56a3a5aa

الاتاحة: https://doi.org/10.1051/epjpv/2024008
https://doaj.org/article/7e92d6ca08974380ab1d72cf56a3a5aa

المؤلفون: Acharya, Sarthak, Sattar, Shahid, Chouhan, Shailesh Singh, Delsing, Jerker

المصدر: Processes. 10(4)

مصطلحات موضوعية: copper metallization, electronics fabrication, DFT analysis, fully additive method, polymerization, UV-laser, SBU-CBM process, printed electronics, characterizations, Electrotechnology, Elektroteknik alt Electrical engineering

وصف الملف: electronic

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-112729
https://doi.org/10.3390/pr10040636
https://lnu.diva-portal.org/smash/get/diva2:1656854/FULLTEXT01.pdf

المؤلفون: Orlov, Andrey A., Rezvanov, Askar A.

المصدر: Modern Electronic Materials, 8((3)), 107-111, (2022-10-20)

مصطلحات موضوعية: low-k dielectric, porosity, time dependent dielectric breakdown, copper metallization

Relation: https://doi.org/10.3897/j.moem.8.3.98145.figure6; https://doi.org/10.3897/j.moem.8.3.98145.figure5; https://doi.org/10.3897/j.moem.8.3.98145.figure1; https://doi.org/10.3897/j.moem.8.3.98145.figure2; https://doi.org/10.3897/j.moem.8.3.98145.figure3; https://doi.org/10.3897/j.moem.8.3.98145.figure4; https://doi.org/10.3897/j.moem.8.3.98145; oai:zenodo.org:7519343

الاتاحة: https://doi.org/10.3897/j.moem.8.3.98145

المؤلفون: Acharya, S. (Sarthak), Sattar, S. (Shahid), Chouhan, S. S. (Shailesh Singh), Delsing, J. (Jerker)

مصطلحات موضوعية: DFT analysis, SBU-CBM process, UV-laser, characterizations, copper metallization, electronics fabrication, fully additive method, polymerization, printed electronics

وصف الملف: application/pdf

الاتاحة: http://urn.fi/urn:nbn:fi-fe2022090557259

المؤلفون: Bruno M. C. Oliveira, Ruben F. Santos, Ana P. Piedade, Paulo J. Ferreira, Manuel F. Vieira

المصدر: Nanomaterials; Volume 12; Issue 10; Pages: 1752

مصطلحات موضوعية: barrier layers, dewetting, cobalt tungsten, copper metallization

وصف الملف: application/pdf

Relation: Nanofabrication and Nanomanufacturing; https://dx.doi.org/10.3390/nano12101752

الاتاحة: https://doi.org/10.3390/nano12101752

المساهمون: Nguyen, Son [IBM Semiconductor Research, Albany, NY (United States)]

المصدر: Applied Physics Letters; 106; 18

وصف الملف: Medium: ED; Size: Article No. 181902

URL الوصول: http://www.osti.gov/scitech/servlets/purl/1229188

المؤلفون: Agata Lachowicz

مصطلحات موضوعية: Ameliz project copper metallization heterojunction solar cells

Relation: https://doi.org/10.5281/zenodo.6563902; https://doi.org/10.5281/zenodo.6563903; oai:zenodo.org:6563903

الاتاحة: https://doi.org/10.5281/zenodo.6563903

المؤلفون: Agata Lachowicz

مصطلحات موضوعية: Ameliz project copper metallization heterojunction solar cells

Relation: https://doi.org/10.5281/zenodo.6563920; https://doi.org/10.5281/zenodo.6563921; oai:zenodo.org:6563921

الاتاحة: https://doi.org/10.5281/zenodo.6563921

المؤلفون: Agata Lachowicz

مصطلحات موضوعية: Ameliz project copper metallization solar cells

Relation: https://doi.org/10.5281/zenodo.6563874; https://doi.org/10.5281/zenodo.6563875; oai:zenodo.org:6563875

الاتاحة: https://doi.org/10.5281/zenodo.6563875

المؤلفون: V. E. Borisenko, L. M. Lynkou

المصدر: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 2, Pp 5-16 (2019)

مصطلحات موضوعية: copper metallization, micro-electro-mechanical system, nanoelectronics, solid state physics, Electronics, TK7800-8360

وصف الملف: electronic resource

Relation: https://doklady.bsuir.by/jour/article/view/1063; https://doaj.org/toc/1729-7648

URL الوصول: https://doaj.org/article/47de819f9732411db6f09b273ac1d1e0

المؤلفون: Lachowicz, Agata

مصطلحات موضوعية: heterojunction AZO copper metallization

Relation: https://doi.org/10.5281/zenodo.7158068; https://doi.org/10.5281/zenodo.7158069; oai:zenodo.org:7158069

الاتاحة: https://doi.org/10.5281/zenodo.7158069

المؤلفون: A. A. Orlov, A. A. Rezvanov, А. А. Орлов, А. А. Резванов

المصدر: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering; Том 24, № 2 (2021); 102-106 ; Известия высших учебных заведений. Материалы электронной техники; Том 24, № 2 (2021); 102-106 ; 2413-6387 ; 1609-3577 ; 10.17073/1609-3577-2021-2

مصطلحات موضوعية: медная металлизация, porosity, time dependent dielectric breakdown, copper metallization, пористость, временной пробой диэлектрика

وصف الملف: application/pdf

Relation: https://met.misis.ru/jour/article/view/427/404; International Technology Roadmap for Semiconductors (ITRS) Interconnect. 2020. https://irds.ieee.org/editions/2020; Gonella R. Key reliability issues for copper integration in damascene architecture. Microelectronic Engineering. 2001; 55(1-4): 245—255. https://doi.org/10.1016/S0167-9317(00)00454-8; Lloyd J.R., Murray C.E., Ponoth S., Cohen S., Liniger E. The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics. Microelectronics Reliability. 2006; 46(9–11): 1643—1647. https://doi.org/10.1016/j.microrel.2006.08.003; Chen F., Bravo O., Chanda K., McLaughlin P., Sullivan T., Gill J., Lloyd J., Kontra R., Aitken J. A comprehensive study of low-k SiCOH TDDB phenomena and its reliability lifetime model development. In: Proc. of the Intern. Reliability Physics Symposium. 26-30, March 2006. New York: IEEE; 2006. P. 46—53. https://doi.org/10.1109/RELPHY.2006.251190; Suzumura N., Yamamoto S., Kodama D., Makabe K., Komori J., Murakami E., Maegawa S., Kubota K. A new TDDB degradation model based on Cu ion drift in Cu interconnect dielectrics. In: Proc. of the Intern. Reliability Physics Symposium. 26–30, March 2006. New York: IEEE; 2006. P. 484—489. https://doi.org/10.1109/RELPHY.2006.251266; Tan T.L., Gan C.L., Du A.Y., Cheng C.K. Effect of Ta migration from sidewall barrier on leakage current in Cu/SiOCH low-k dielectrics. Journal of Applied Physics. 2009; 106(4): 043517. https://doi.org/10.1063/1.3202387; Huang X., Sukharev V., Qi Z.-D., Kim T.-Y., Tan S. X.-D. Physics-based full-chip TDDB assessment for BEOL interconnects. In: Proc. of the 53rd Annual Design Automation Conference 2016 – DAC ’16. 05–09, June 2016. Austin, USA: IEEE; 2016. https://doi.org/10.1145/2897937.2898062; Валеев А.С., Красников Г.Я. Технология изготовления внутрикристальных и межкристальных межсоединений современных СБИС (обзор, концепция развития). Микроэлектроника. 2015; 44(3): 180—201. https://doi.org/10.7868/S0544126915030084; Groove A.S. Physics and Technology of Semiconductor Devices. Hoboken, NJ, USA: Wiley, 1967.; Yang L.Y., Zhang D.H., Li C.Y., Liu R., Wee A.T.S., Foo P.D. Characterization of Cu/Ta/ultra low-k porous polymer structures for multilevel interconnects. Thin Solid Films. 2004; 462–463: 182—185. https://doi.org/10.1016/j.tsf.2004.05.071; Kuo Y.-L., Lee H.-H., Lee C., Lin J.-C., Shue S.-L., Liang M.-S., Daniels B.J. Diffusion of copper in titanium zirconium nitride thin films. Electrochemical and Solid-State Letters. 2004; 7(3): C35—C37. https://doi.org/10.1149/1.1644355; https://met.misis.ru/jour/article/view/427

الاتاحة: https://met.misis.ru/jour/article/view/427
https://doi.org/10.17073/1609-3577-2021-2-102-106

المؤلفون: Y. C. Lin, S. H. Chen, P. H. Lee, K. H. Lai, T. J. Huang, Edward Y. Chang, Heng-Tung Hsu

المصدر: Micromachines; Volume 11; Issue 2; Pages: 222

مصطلحات موضوعية: high-electron-mobility transistors, copper metallization, millimeter wave

وصف الملف: application/pdf

Relation: D1: Semiconductor Devices; https://dx.doi.org/10.3390/mi11020222

الاتاحة: https://doi.org/10.3390/mi11020222

المؤلفون: Andrey A. Orlov, Askar A. Rezvanov

مصطلحات موضوعية: porosity, General Medicine, time dependent dielectric breakdown, low-k dielectric, copper metallization

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56b01a84e6a3c0c9c1961e90d7c02c10
https://zenodo.org/record/7519343

المؤلفون: Lachowicz, Agata

مصطلحات موضوعية: copper metallization heterojunction solar cells

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e7996be3e025e459920de81bf7fa4c4

المؤلفون: Kazuyoshi Ueno, Ploybussara Gomasang

المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :3825

المؤلفون: Lachowicz, Agata

مصطلحات موضوعية: heterojunction solar cells copper metallization plating

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e10bffc0adc672a9eff2061e06a2d27

المؤلفون: Agata Lachowicz

مصطلحات موضوعية: Ameliz project copper metallization heterojunction solar cells

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a7303cf11817f59fcae61b608672105b

المؤلفون: Mohapatra, Bijay Kumar, Sahu, Anshuman Kumar, Mahapatra, Siba Sankar

المصدر: Indian Journal of Engineering and Materials Sciences (IJEMS); Vol 28, No 2 (2021): IJEMS- April-2021; 174-181

مصطلحات موضوعية: Mechanical Engineering, Acrylonitrile-butadiene-styrene (ABS), Fused deposition modelling (FDM), Copper metallization

وصف الملف: application/pdf

Relation: http://op.niscair.res.in/index.php/IJEMS/article/download/40106/465524596; http://op.niscair.res.in/index.php/IJEMS/article/download/40106/465524597; http://op.niscair.res.in/index.php/IJEMS/article/download/40106/465524598; http://op.niscair.res.in/index.php/IJEMS/article/view/40106

الاتاحة: http://op.niscair.res.in/index.php/IJEMS/article/view/40106
https://doi.org/10.56042/ijems.v28i2.40106