المؤلفون: Dong Hun Lee (533726), Honghwi Park (11706575), Michael Clevenger (11706578), Hyeonghun Kim (5946656), Chung Soo Kim (1699147), Mingyuan Liu (142151), Giyong Kim (11706581), Han Wook Song (10953784), Kwangsoo No (1866847), Sung Yeol Kim (1842613), Dong-Kyun Ko (1994188), Anne Lucietto (11706584), Hongsik Park (2210719), Sunghwan Lee (2054470)

مصطلحات موضوعية: Medicine, Evolutionary Biology, Science Policy, Space Science, Environmental Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, metallurgical junction required, low saturation current, limits complexities related, completed reaction annealing, ± 3 v, reduced trap density, simple processing route, narrow processing window, multicationic oxide materials, 3 , blocking performance across, n ‑ ingazno, blocking performance, trap densities, 5 v, performance oxide, ∼ 0, type oxides, type oxide, temperature sputter, small turn, selected due, rectification behavior, overarching goal

Relation: https://figshare.com/articles/journal_contribution/High-Performance_Oxide-Based_p_n_Heterojunctions_Integrating_p_SnO_i_sub_x_sub_i_and_n_InGaZnO/17014280

الاتاحة: https://doi.org/10.1021/acsami.1c16222.s001