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1Academic Journal
المؤلفون: Tetyorkin, V., Tsybrii, Z., Slipokurov, V., Yevmenova, A., Andrieieva, K., Kosulya, O.
المصدر: Ukrainian Journal of Physics; Vol. 70 No. 1 (2025); 56 ; Український фізичний журнал; Том 70 № 1 (2025); 56 ; 2071-0194 ; 2071-0186 ; 10.15407/ujpe70.1
مصطلحات موضوعية: IЧ фотодiоди, HgCdTe, InSb, механiзми транспорту носiїв заряду, моделювання темнового струму, IR photodiodes, charge carrier transport mechanisms, dark current simulation
وصف الملف: application/pdf
Relation: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023463/3246; https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023463/3247; https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023463
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2Academic Journal
المؤلفون: Julia FEDOTOVA
المصدر: Medžiagotyra, Vol 28, Iss 2, Pp 230-235 (2022)
مصطلحات موضوعية: polyimides, kapton, carrier transport mechanisms, Mining engineering. Metallurgy, TN1-997
وصف الملف: electronic resource
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3Academic Journal
المؤلفون: FEDOTOVA, Julia
المصدر: Materials Science ; Vol. 28 No. 2 (2022); 230-235 ; 2029-7289 ; 1392-1320
مصطلحات موضوعية: polyimides, Kapton, carrier transport mechanisms
وصف الملف: application/pdf
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4Academic Journal
المؤلفون: Joeson Wong (3091938), Artur Davoyan (5100053), Bolin Liao (4030496), Andrey Krayev (1494679), Kiyoung Jo (1467685), Eli Rotenberg (2183532), Aaron Bostwick (2221105), Chris M. Jozwiak (10934413), Deep Jariwala (1298532), Ahmed H. Zewail (1561030), Harry A. Atwater (1300098)
مصطلحات موضوعية: Biophysics, Cell Biology, Neuroscience, Biotechnology, Ecology, Science Policy, Space Science, Environmental Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Physical Sciences not elsewhere classified, surface, scanning ultrafast electron microscopy, Thickness-Induced Band-Bending Junc., junction, carrier transport mechanisms, thickness, charge carriers
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5
المؤلفون: Julia Fedotova
المصدر: Medžiagotyra (2021)
مصطلحات موضوعية: carrier transport mechanisms, Materials science, Mining engineering. Metallurgy, Physics::Instrumentation and Detectors, TN1-997, chemistry.chemical_element, Dielectric, Copper, chemistry, General Materials Science, polyimides, Composite material, kapton, Polyimide
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6Academic Journal
المؤلفون: Grivickas, Paulius Vytautas, Ščajev, Patrik, Kazuchits, N., Lastovskii, S., Voss, L. F., Conway, A. M., Mazanik, A., Korolik, O., Bikbajevas, Vitalijus, Grivickas, Vytautas
المصدر: Applied physics letters, Melville : American Institute of Physics, 2020, vol.117, art. no. 242103, p. [1-6] ; ISSN 0003-6951 ; eISSN 1077-3118
مصطلحات موضوعية: diamond, carrier-transport mechanisms, pump–probe technique, defects
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7Report
المؤلفون: Peng YC, Xu GY, He YL, Liu M, Li YX, Peng YC,Hebei Univ,Coll Elect & Informat Engn,Baoding 071002,Peoples R China.
مصطلحات موضوعية: (n)NC-si : H/(p)C-si Heterojunction, Band Model, Carrier Transport Mechanisms, Temperature Properties, Crystalline, 半导体物理
Relation: ACTA PHYSICA SINICA; Peng YC; Xu GY; He YL; Liu M; Li YX .Carrier transport properties of the (n)nc-Si : H/(p)c-Si heterojunction ,ACTA PHYSICA SINICA,2000,49(12):2466-2471; http://ir.semi.ac.cn/handle/172111/12350
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8Academic Journal
المؤلفون: Lin, Gong-Ru
المساهمون: NATIONAL TAIWAN UNIV TAIPEI (TAIWAN) GRADUATE INST OF ELECTRO-OPTICAL ENGINEERING
المصدر: DTIC
مصطلحات موضوعية: Lasers and Masers, Electrooptical and Optoelectronic Devices, Crystallography, Optics, ANNEALING, ELECTROLUMINESCENCE, CARBON DIOXIDE LASERS, ABLATION, CHEMICAL VAPOR DEPOSITION, LIGHT EMITTING DIODES, NANOSTRUCTURES, TAIWAN, METAL OXIDE SEMICONDUCTORS, SILICON DIOXIDE, EXPERIMENTAL DESIGN, FOREIGN REPORTS, FOWLER-NORDHEIM TUNNELING THRESHOLD, MOSLED(METAL-OXIDE-SEMICONDUCTOR LIGHT EMITTING DIODE), CO2 LASER RTA(RAPID THERMAL ANNEALING), CARRIER-TRANSPORT MECHANISMS, SILICON NANOCRYSTALS, SILICON OXIDE MATERIALS
وصف الملف: text/html
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9Academic Journal
المؤلفون: Huang, Xiaoming, Wu, Chenfei, Lu, Hai, Ren, Fang-Fang, Chen, Dunjun, Jiang, Rong, Zhang, R., Zheng, Youdou, Xu, Qingyu
المصدر: Solid-State Electronics
مصطلحات موضوعية: Keywords: Carrier transport mechanisms, Carrier transport process, Channel conductance, Field-effect mobilities, Gate bias dependence, Indium gallium zinc oxides, Temperature increase, Transport mechanism, Carrier transport, Electric properties, Gallium, Indium, Te Indium gallium zinc oxide (IGZO), Thin film transistors (TFT), Transport mechanisms
Relation: http://hdl.handle.net/1885/62338; https://openresearch-repository.anu.edu.au/bitstream/1885/62338/5/Ren-temperature_and_gate.pdf.jpg; https://openresearch-repository.anu.edu.au/bitstream/1885/62338/7/01_Huang_Temperature_and_gate_bias_2013.pdf.jpg
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10Dissertation/ Thesis
المؤلفون: Ekinci, Huseyin
المساهمون: Grave de Peralta, Luis, Bernussi, Ayrton, Idesman, Alexander V., Kaye, Anthony B., Nikishin, Sergey A.
مصطلحات موضوعية: GaN, III-Nitrides, SiC, Tandem solar cells, EQE, Passivation, Plasma etching, Carrier transport mechanisms, HRXRD, PAMBE
وصف الملف: application/pdf
Relation: http://hdl.handle.net/2346/73673
الاتاحة: http://hdl.handle.net/2346/73673
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11Dissertation/ Thesis
المؤلفون: Tsiarapas, Christos, Τσιαράπας, Χρήστος
مصطلحات موضوعية: Υμένια ZnO, Δίοδοι Schottky, Οπτοηλεκτρονικές ιδιότητες, Υδρογόνο, Ηλεκτρικός χαρακτηρισμός, Μηχανισμοί μεταφοράς ηλεκτρικών φορέων, Βαθιές παγίδες ηλεκτρικών φορέων, ZnO films, Schottky diodes, Optoelectronic properties, Hydrogen, Electrical characterization, Carrier transport mechanisms, Deep level carrier traps, Φυσικές Επιστήμες, Φυσική, Επιστήμες Μηχανικού και Τεχνολογία, Επιστήμη Ηλεκτρολόγου Μηχανικού, Ηλεκτρονικού Μηχανικού, Μηχανικού Η/Υ, Natural Sciences, Physical Sciences, Engineering and Technology, Electrical Engineering, Electronic Engineering, Information Engineering
Relation: http://hdl.handle.net/10442/hedi/36416
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12Electronic Resource
المؤلفون: Huang, Xiaoming, Wu, Chenfei, Lu, Hai, Ren, Fang-Fang, Chen, Dunjun, Jiang, Rong, Zhang, R., Zheng, Youdou, Xu, Qingyu
المصدر: Solid-State Electronics
مصطلحات الفهرس: Keywords: Carrier transport mechanisms; Carrier transport process; Channel conductance; Field-effect mobilities; Gate bias dependence; Indium gallium zinc oxides; Temperature increase; Transport mechanism; Carrier transport; Electric properties; Gallium; Indium; Te Indium gallium zinc oxide (IGZO); Thin film transistors (TFT); Transport mechanisms, Journal article
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13Electronic Resource
المؤلفون: NATIONAL TAIWAN UNIV TAIPEI (TAIWAN) GRADUATE INST OF ELECTRO-OPTICAL ENGINEERING, Lin, Gong-Ru
المصدر: DTIC
مصطلحات الفهرس: Lasers and Masers, Electrooptical and Optoelectronic Devices, Crystallography, Optics, ANNEALING, ELECTROLUMINESCENCE, CARBON DIOXIDE LASERS, ABLATION, CHEMICAL VAPOR DEPOSITION, LIGHT EMITTING DIODES, NANOSTRUCTURES, TAIWAN, METAL OXIDE SEMICONDUCTORS, SILICON DIOXIDE, EXPERIMENTAL DESIGN, FOREIGN REPORTS, FOWLER-NORDHEIM TUNNELING THRESHOLD, MOSLED(METAL-OXIDE-SEMICONDUCTOR LIGHT EMITTING DIODE), CO2 LASER RTA(RAPID THERMAL ANNEALING), CARRIER-TRANSPORT MECHANISMS, SILICON NANOCRYSTALS, SILICON OXIDE MATERIALS, Text
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