المؤلفون: Marek Solčanský, Jiři Vaněk, Aleš Poruba

المصدر: Acta Montanistica Slovaca, Vol 17, Iss 4, Pp 263-267 (2012)

مصطلحات موضوعية: chemical passivation, quinhydrone, carrier bulk- lifetime, Microwave Photoconductance Decay, Mining engineering. Metallurgy, TN1-997, Geology, QE1-996.5

وصف الملف: electronic resource

Relation: http://actamont.tuke.sk/pdf/2012/n4/5solcansky.pdf; https://doaj.org/toc/1335-1788

URL الوصول: https://doaj.org/article/046e0d22a82a4a8cac4696bc1b2b31d8

المؤلفون: Solčanský, Marek, Vaněk, Jiří

المساهمون: Pihera, Josef, Steiner, František

مصطلحات موضوعية: chemická pasivace, quinhydrone, životnost nosičů náboje, chemical passivation, carrier bulk lifetime

وصف الملف: 4 s.; application/pdf

Relation: Electroscope; Electroscope. 2011, č. 4, EDS 2011.; http://147.228.94.30/images/PDF/Rocnik2011/Cislo4_2011/r5c4c7.pdf; http://hdl.handle.net/11025/626

الاتاحة: http://hdl.handle.net/11025/626
http://147.228.94.30/images/PDF/Rocnik2011/Cislo4_2011/r5c4c7.pdf

المؤلفون: Cristoloveanu, S., Chovet, A., Kamarinos, G.

المصدر: ISSN: 0035-1687.

مصطلحات موضوعية: carrier lifetime, carrier mobility, electron hole recombination, Hall effect, metal insulator semiconductor structures, semiconductor thin films, silicon, thin SOS films, magnetodiode effect, surface recombination velocities, carrier bulk lifetime, Hall mobilities, Si SiO sub 2 interface, drift electron mobility, semiconductor structure, [PHYS.HIST]Physics [physics]/Physics archives

Relation: jpa-00244512; https://hal.archives-ouvertes.fr/jpa-00244512; https://hal.archives-ouvertes.fr/jpa-00244512/document; https://hal.archives-ouvertes.fr/jpa-00244512/file/ajp-rphysap_1978_13_12_615_0.pdf

الاتاحة: https://hal.archives-ouvertes.fr/jpa-00244512
https://hal.archives-ouvertes.fr/jpa-00244512/document
https://hal.archives-ouvertes.fr/jpa-00244512/file/ajp-rphysap_1978_13_12_615_0.pdf
https://doi.org/10.1051/rphysap:019780013012061500

المؤلفون: A. Chovet, S. Cristoloveanu, G. Kamarinos

المصدر: Revue de Physique Appliquée
Revue de Physique Appliquée, Société française de physique / EDP, 1978, 13 (12), pp.615-618. ⟨10.1051/rphysap:019780013012061500⟩

مصطلحات موضوعية: magnetodiode effect, semiconductor structure, Electron mobility, drift electron mobility, Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, electron hole recombination, Hall effect, 0103 physical sciences, carrier mobility, Hall mobilities, thin SOS films, 010302 applied physics, surface recombination velocities, Condensed matter physics, carrier lifetime, business.industry, silicon, Carrier lifetime, 021001 nanoscience & nanotechnology, chemistry, metal insulator semiconductor structures, carrier bulk lifetime, [PHYS.HIST]Physics [physics]/Physics archives, Sapphire, Optoelectronics, semiconductor thin films, 0210 nano-technology, Transport phenomena, business, Recombination, Order of magnitude, Si SiO sub 2 interface

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2cbd55cc426db22b1b60a20ddae34ed6
https://hal.archives-ouvertes.fr/jpa-00244512/document