المؤلفون: Wang, Bixuan, Zhang, Ruizhe, Song, Qihao, Wang, Hengyu, He, Quanbo, Li, Qiang, Udrea, Florin, Zhang, Yuhao

مصطلحات موضوعية: GaN HEMT, gate, reliability, lifetime, robustness, spike, ringing, breakdown inductive power switching

وصف الملف: application/pdf

Relation: Bixuan Wang, Ruizhe Zhang, Qihao Song, Hengyu Wang, Quanbo He, Qiang Li, Florin Udrea, and Yuhao Zhang, “Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method,” in IEEE Transactions on Power Electronics (Early Access), doi:10.1109/TPEL.2024.3355042.; https://hdl.handle.net/10919/117767

الاتاحة: https://hdl.handle.net/10919/117767