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    المساهمون: Orange Labs Chatillon, Orange Labs, Avignon Université (AU), Laboratoire Informatique d'Avignon (LIA), Avignon Université (AU)-Centre d'Enseignement et de Recherche en Informatique - CERI, Network Engineering and Operations (NEO), Inria Sophia Antipolis - Méditerranée (CRISAM), Institut National de Recherche en Informatique et en Automatique (Inria)-Institut National de Recherche en Informatique et en Automatique (Inria)

    المصدر: ISSN: 1536-1276 ; IEEE Transactions on Wireless Communications ; https://hal.science/hal-04601576 ; IEEE Transactions on Wireless Communications, 2024, 23 (10), ⟨10.1109/TWC.2024.3404231⟩.

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    المؤلفون: Al-Tous, Hanan, Tirkkonen, Olav

    المساهمون: Department of Information and Communications Engineering, Communications Theory, Aalto-yliopisto, Aalto University

    وصف الملف: application/pdf

    Relation: IEEE Transactions on Wireless Communications; Volume 23, issue 8, pp. 9375-9388; PURE LINK: http://www.scopus.com/inward/record.url?scp=85187263355&partnerID=8YFLogxK; PURE FILEURL: https://research.aalto.fi/files/163156230/SRSPaper_4_.pdf; https://aaltodoc.aalto.fi/handle/123456789/131534

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    المساهمون: Department of Physics, Helsinki Institute of Physics, Materials Physics

    وصف الملف: application/pdf

    Relation: This project has received funding from the European Union's Horizon 2020 research and innovation programme under Grant Agreement No. 688072. The views and opinions expressed herein do not necessarily reflect those of the European Commission. We thank the Finnish Grid and Cloud Infrastructure (FGCI), urn:nbn:fi:research-infras-2016072533, and CSC-IT Center for Science, Finland, for computational resources. Special thanks to prof. Wolfhard Moller at Helmholtz-Zentrum Dresden-Rossendorf for the TRIDYN simulations and insightful discussions.; Djurabekova , F , Fridlund , C & Nordlund , K 2020 , ' Defect and density evolution under high-fluence ion irradiation of Si/SiO2 heterostructures ' , Physical Review Materials , vol. 4 , no. 1 , 013601 . https://doi.org/10.1103/PhysRevMaterials.4.013601; ORCID: /0000-0002-5828-200X/work/68612757; ORCID: /0000-0001-6244-1942/work/68613832; ORCID: /0000-0002-2424-1912/work/68616580; http://hdl.handle.net/10138/316257; f8cf47fc-294e-412e-a24e-032e78f08983; 000505499900001