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1Conference
المؤلفون: Nguyen, Ngoc Duy
المصدر: XXXVIII ENFMC Brazilian Physical Society Meeting, 24-28 May 2015
مصطلحات موضوعية: Atomic layer doping, Ultra shallow junction, Physical, chemical, mathematical & earth Sciences, Physics, Physique, chimie, mathématiques & sciences de la terre, Physique
URL الوصول: https://orbi.uliege.be/handle/2268/207874
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2Academic Journal
المؤلفون: Masao Sakuraba, Katsutoshi Sugawara, Takayuki Nosaka, Hisanao Akima, Shigeo Sato
المصدر: Science and Technology of Advanced Materials, Vol 18, Iss 1, Pp 294-306 (2017)
مصطلحات موضوعية: Epitaxial growth, atomic-layer doping, plasma-enhanced chemical-vapor deposition, argon, silicon, boron, carrier mobility, Hall effect, Materials of engineering and construction. Mechanics of materials, TA401-492, Biotechnology, TP248.13-248.65
وصف الملف: electronic resource
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3Conference
المؤلفون: Takeuchi, Shotaro, Yang, Lijun, Nguyen, Ngoc Duy, Loo, Roger, Conard, Thierry, Pourtois, Geoffrey, Vandervorst, Wilfried, Caymax, Matty
المصدر: 4th International Workshop on New Group IV Semiconductor Nanoelectronics, Sendai, Japan [JP], 25-27/9/2008
مصطلحات موضوعية: Atomic layer epitaxy, Atomic layer doping, Phosphorus, Arsenic, Physical, chemical, mathematical & earth Sciences, Physics, Physique, chimie, mathématiques & sciences de la terre, Physique
URL الوصول: https://orbi.uliege.be/handle/2268/68702
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4Academic Journal
المؤلفون: Park, Si-Young, Anisha, Ramesh, Berger, Paul, Loo, Roger, Nguyen, Ngoc Duy, Takeuchi, Shotaro, Caymax, Matty
المصدر: IEEE Electron Device Letters, 30, 1173 (2009)
مصطلحات موضوعية: SiGe, Resonant interband tunneling diode, Vapor phase doping, Delta-doping, Atomic layer doping, Tunnel effect, Engineering, computing & technology, Electrical & electronics engineering, Ingénierie, informatique & technologie, Ingénierie électrique & électronique
Relation: http://dx.doi.org/10.1109/LED.2009.2030989; urn:issn:0741-3106; urn:issn:1558-0563; https://orbi.uliege.be/handle/2268/68789; info:hdl:2268/68789; https://orbi.uliege.be/bitstream/2268/68789/1/Park_Nguyen_EDL_30_1173_2009_author_postprint.pdf
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5Academic Journal
المؤلفون: Kiyokazu NAKAGAWA, Masanobu MIYAO, 中川 清和, 宮尾 正信
المصدر: 応用物理 / OYOBUTURI. 1992, 61(11):1104
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6Academic Journal
المؤلفون: Yamamoto, Yuji, Nien, Li wei, Virgilio, Michele, Costina, Ioan, Schubert, Markus Andreas, Seifert, Winfried, Srinivasan, Ashwyn, Loo, Roger, Scappucci, Giordano, Sabbagh, Diego, Hesse, Anne, Murota, Junichi, Schroeder, Thomas, Tillack, Bernd, CAPELLINI, GIOVANNI
المساهمون: Yamamoto, Yuji, Nien, Li wei, Capellini, Giovanni, Virgilio, Michele, Costina, Ioan, Schubert, Markus Andrea, Seifert, Winfried, Srinivasan, Ashwyn, Loo, Roger, Scappucci, Giordano, Sabbagh, Diego, Hesse, Anne, Murota, Junichi, Schroeder, Thoma, Tillack, Bernd
مصطلحات موضوعية: atomic layer doping, chemical vapor deposition, epitaxy, gemanium, phosporu, photoluminescence, Electronic, Optical and Magnetic Material, Condensed Matter Physic, Materials Chemistry2506 Metals and Alloy, Electrical and Electronic Engineering
Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000409040500002; volume:32; issue:10; firstpage:104005; journal:SEMICONDUCTOR SCIENCE AND TECHNOLOGY; http://hdl.handle.net/11590/323890; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85030105434; http://iopscience.iop.org/article/10.1088/1361-6641/aa8499/pdf
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7
المؤلفون: Yuji Yamamoto, Bernd Tillack, Markus Andreas Schubert, Winfried Seifert, Anne Hesse, Roger Loo, Giordano Scappucci, Giovanni Capellini, D. Sabbagh, Thomas Schroeder, Michele Virgilio, Junichi Murota, Ioan Costina, Li-Wei Nien, Ashwyn Srinivasan
المساهمون: Yamamoto, Yuji, Nien, Li wei, Capellini, Giovanni, Virgilio, Michele, Costina, Ioan, Schubert, Markus Andrea, Seifert, Winfried, Srinivasan, Ashwyn, Loo, Roger, Scappucci, Giordano, Sabbagh, Diego, Hesse, Anne, Murota, Junichi, Schroeder, Thoma, Tillack, Bernd
مصطلحات موضوعية: Materials Chemistry2506 Metals and Alloys, Materials science, Photoluminescence, Annealing (metallurgy), atomic layer doping, chemical vapor deposition, epitaxy, gemanium, phosporus, photoluminescence, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Electrical and Electronic Engineering, Inorganic chemistry, Analytical chemistry, phosporu, 02 engineering and technology, Chemical vapor deposition, Condensed Matter Physic, Epitaxy, 01 natural sciences, Crystallinity, 0103 physical sciences, Materials Chemistry, Electronic, Optical and Magnetic Materials, 010302 applied physics, Materials Chemistry2506 Metals and Alloy, Electronic, Optical and Magnetic Material, Doping, 021001 nanoscience & nanotechnology, Crystallographic defect, 0210 nano-technology, Luminescence
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8Patent
المؤلفون: Nguyen, Ngoc Duy, Loo, Roger, Caymax, Matty
المساهمون: IMEC, Leuven (Belgium)
مصطلحات موضوعية: Junction, Atomic layer epitaxy, Epitaxial growth, Bipolar transistor, Vapor phase doping, Atomic layer doping, BiCMOS, Engineering, computing & technology, Electrical & electronics engineering, Ingénierie, informatique & technologie, Ingénierie électrique & électronique
URL الوصول: https://orbi.uliege.be/handle/2268/68992
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9Academic Journal
المؤلفون: Junichi Murota, Masao Sakuraba, Bernd Tillack
المساهمون: The Pennsylvania State University CiteSeerX Archives
مصطلحات موضوعية: Si-based group IV semiconductor, SiGe, ultrasmall heterodevices, chemical vapor deposition, atomic layer doping
وصف الملف: application/pdf
Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.696.1003; http://www.scientific.net/SSP.95-96.607.pdf
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10Academic Journal
المؤلفون: Junichi Murota, Masao Sakuraba, Bernd Tillack
المساهمون: The Pennsylvania State University CiteSeerX Archives
مصطلحات موضوعية: Si-based group IV semiconductor, SiGe, ultrasmall heterodevices, chemical vapor deposition, atomic layer doping, heterojunction bipolar transistor (HBT
وصف الملف: application/pdf
Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.430.5842; http://www.scientific.net/SSP.95-96.607.pdf
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11Patent
المؤلفون: Nguyen, Ngoc Duy, Loo, Roger, Caymax, Matty
المساهمون: IMEC, Leuven (Belgium)
مصطلحات موضوعية: Junction, Atomic layer epitaxy, Epitaxial growth, Bipolar transistor, Vapor phase doping, Atomic layer doping, BiCMOS, Engineering, computing & technology, Electrical & electronics engineering, Ingénierie, informatique & technologie, Ingénierie électrique & électronique
Relation: https://www.google.com/patents/US8158451?hl=fr; https://orbi.uliege.be/handle/2268/68992; info:hdl:2268/68992; patent no.:US 8158451 B2, EP 2 202 784 B1
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