المؤلفون: Ou, Feiyang, Abdullah, Fahim, Wang, Henrik, Tom, Matthew, Orkoulas, Gerassimos, Christofides, Panagiotis D

مصطلحات موضوعية: Control Engineering, Mechatronics and Robotics, Engineering, Engineering Practice and Education, Atomic layer etching, Radiative heating lamps, Sparse identification modeling, Model predictive control, Computer aided engineering, Applied Mathematics, Chemical Engineering, Maritime Engineering, Resources Engineering and Extractive Metallurgy, Strategic, Defence & Security Studies, Chemical engineering, Environmental engineering, Resources engineering and extractive metallurgy

وصف الملف: application/pdf

URL الوصول: https://escholarship.org/uc/item/0j25292c

المؤلفون: Ivan Erofeev, Antony Winata Hartanto, Muhaimin Mareum Khan, Kerong Deng, Krishna Kumar, Zainul Aabdin, Weng Weei Tjiu, Mingsheng Zhang, Antoine Pacco, Harold Philipsen, Angshuman Ray Chowdhuri, Han Vinh Huynh, Frank Holsteyns, Utkur Mirsaidov

المصدر: Advanced Materials Interfaces, Vol 12, Iss 1, Pp n/a-n/a (2025)

مصطلحات موضوعية: atomic layer etching (ALE), integrated circuits (ICs), interconnects, metal etching, plasma oxidation, Physics, QC1-999, Technology

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2196-7350

URL الوصول: https://doaj.org/article/8fbea89bece141a68a805055e826eef7

المؤلفون: Dallorto, Stefano, Goodyear, Andy, Cooke, Mike, Szornel, Julia E, Ward, Craig, Kastl, Christoph, Schwartzberg, Adam, Rangelow, Ivo W, Cabrini, Stefano

المصدر: Plasma Processes and Polymers. 16(9)

مصطلحات موضوعية: Engineering, Nanotechnology, aspect ratio independent etching, atomic layer etching, ion energy distribution, plasma etching, self-limiting process, Atomic, Molecular, Nuclear, Particle and Plasma Physics, Physical Chemistry (incl. Structural), Materials Engineering, Applied Physics, Macromolecular and materials chemistry, Materials engineering, Nuclear and plasma physics

وصف الملف: application/pdf

URL الوصول: https://escholarship.org/uc/item/4cn657t1
https://escholarship.org/content/qt4cn657t1/qt4cn657t1.pdf

المؤلفون: Michael Nolan

المساهمون: Kompetenzzentrum für nicht-textuelle Materialien

مصطلحات موضوعية: semiconductor device, alucone, Atomic Layer Deposition, simulation of plasma enhanced deposition, titanicone, atomistic simulations, thermal atomic layer etching, cobalt, Chemistry, Studienbereich Chemie, Mathematik, Naturwissenschaften

Relation: https://av.tib.eu/media/65477

الاتاحة: https://av.tib.eu/media/65477

المؤلفون: Dussart, Rémi, Tillocher, Thomas, Antoun, Gaelle, Nos, Jack, Lefaucheux, Philippe, Girard, Aurélie, Cardinaud, Christophe

المساهمون: Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux de Nantes Jean Rouxel (IMN), Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Nantes université - UFR des Sciences et des Techniques (Nantes univ - UFR ST), Nantes Université - pôle Sciences et technologie, Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ)-Nantes Université - pôle Sciences et technologie, Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ)-Nantes Université - Ecole Polytechnique de l'Université de Nantes (Nantes Univ - EPUN), Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ), Satoshi Hamaguchi

المصدر: 14th EU-Japan Joint Symposium on Plasma Processing (JSPP) 2023
https://hal.science/hal-04072312
14th EU-Japan Joint Symposium on Plasma Processing (JSPP) 2023, Satoshi Hamaguchi, Apr 2023, Okinawa, Japan, Japan

مصطلحات موضوعية: Cryogenic etching, Atomic layer etching, [SPI]Engineering Sciences [physics]

جغرافية الموضوع: Okinawa, Japan

Relation: hal-04072312; https://hal.science/hal-04072312; https://hal.science/hal-04072312/document; https://hal.science/hal-04072312/file/Remi%20DUSSART%20AbstEJ_JSPP.pdf

الاتاحة: https://hal.science/hal-04072312
https://hal.science/hal-04072312/document
https://hal.science/hal-04072312/file/Remi%20DUSSART%20AbstEJ_JSPP.pdf

المؤلفون: An-Chen Liu, Po-Tsung Tu, Hsin-Chu Chen, Yung-Yu Lai, Po-Chun Yeh, Hao-Chung Kuo

المصدر: Micromachines; Volume 14; Issue 8; Pages: 1582

مصطلحات موضوعية: atomic layer etching (ALE), MIS-HEMT, gate surface roughness

وصف الملف: application/pdf

Relation: D1: Semiconductor Devices; https://dx.doi.org/10.3390/mi14081582

الاتاحة: https://doi.org/10.3390/mi14081582

المؤلفون: Junho Jung, Kyongnam Kim

المصدر: Materials; Volume 16; Issue 10; Pages: 3611

مصطلحات موضوعية: atomic layer etching, semiconductor, EPC, plasma

وصف الملف: application/pdf

Relation: Manufacturing Processes and Systems; https://dx.doi.org/10.3390/ma16103611

الاتاحة: https://doi.org/10.3390/ma16103611

المؤلفون: Sharma, Varun, Natarajan, Suresh Kondati, Elliott, Simon D., Blomberg, Tom, Haukka, Suvi, Givens, Michael E., Tuominen, Marko, Ritala, Mikko

المساهمون: Doctoral Programme in Materials Research and Nanosciences, Department of Chemistry, Mikko Ritala / Principal Investigator, HelsinkiALD

مصطلحات موضوعية: atomic layer etching, density functional theory, thermal etching, ATOMIC LAYER DEPOSITION, THIN-FILMS, METAL, TIN, DECOMPOSITION, CHEMISTRIES, PERFORMANCE, Chemical sciences

وصف الملف: application/pdf

Relation: The authors thank Eurofins EAG Materials Science, LLC (California, USA) for the TEM analysis. S.K.N. thanks ICHEC and the Science Foundation Ireland funded computing center of Tyndall National Institute for computer time. S.K.N. thanks Rita Mullins for help with reaction free energy calculations.; Sharma , V , Natarajan , S K , Elliott , S D , Blomberg , T , Haukka , S , Givens , M E , Tuominen , M & Ritala , M 2021 , ' Combining Experimental and DFT Investigation of the Mechanism Involved in Thermal Etching of Titanium Nitride Using Alternate Exposures of NbF5 and CCl4, or CCl4 Only ' , Advanced Materials Interfaces , vol. 8 , no. 22 , 2101085 . https://doi.org/10.1002/admi.202101085; ORCID: /0000-0002-6210-2980/work/124027030; http://hdl.handle.net/10138/350070; 4220e790-b275-48c8-b7a5-0335135ece99; 000709853400001

الاتاحة: http://hdl.handle.net/10138/350070

المؤلفون: Gerritsen, Sven H., Chittock, Nicholas J., Vandalon, Vincent, Verheijen, Marcel A., Knoops, Harm C.M., Kessels, Wilhelmus M.M., Mackus, Adriaan J.M.

المصدر: Gerritsen , S H , Chittock , N J , Vandalon , V , Verheijen , M A , Knoops , H C M , Kessels , W M M & Mackus , A J M 2022 , ' Surface Smoothing by Atomic Layer Deposition and Etching for the Fabrication of Nanodevices ' , ACS Applied Nano Materials , vol. 5 , no. 12 , pp. 18116-18126 . https://doi.org/10.1021/acsanm.2c04025

مصطلحات موضوعية: atomic layer deposition, atomic layer etching, plasma processing, surface smoothing, ultrathin films

وصف الملف: application/pdf

الاتاحة: https://research.tue.nl/en/publications/dc7deea5-e156-4a57-9e53-ca8c8996ed8d
https://doi.org/10.1021/acsanm.2c04025
https://pure.tue.nl/ws/files/257972562/acsanm.2c04025.pdf
http://www.scopus.com/inward/record.url?scp=85143637025&partnerID=8YFLogxK

المؤلفون: Yu, Qihao, Lemmen, Erik, Vermulst, Bas, Mackus, Adriaan J.M., Kessels, W.M.M. (Erwin), Wijnands, Korneel

المصدر: Yu , Q , Lemmen , E , Vermulst , B , Mackus , A J M , Kessels , W M M & Wijnands , K 2022 , ' Equivalent electric circuit model of accurate ion energy control with tailored waveform biasing ' , Plasma Sources Science and Technology , vol. 31 , no. 3 , 035012 . https://doi.org/10.1088/1361-6595/ac4c27

مصطلحات موضوعية: atomic layer deposition, atomic layer etching, equivalent electric circuit, ion energy distribution, switched-mode power converter, tailored waveform biasing, /dk/atira/pure/sustainabledevelopmentgoals/affordable_and_clean_energy, name=SDG 7 - Affordable and Clean Energy

وصف الملف: application/pdf

الاتاحة: https://research.tue.nl/en/publications/2197eb50-3b1f-4ff8-8f48-b98b3e3059e8
https://doi.org/10.1088/1361-6595/ac4c27
https://pure.tue.nl/ws/files/199713685/Yu_2022_Plasma_Sources_Sci._Technol._31_035012.pdf
http://www.scopus.com/inward/record.url?scp=85128115523&partnerID=8YFLogxK

المؤلفون: Mullins, Rita, Gutiérrez Moreno, José Julio, Nolan, Michael

المساهمون: Barcelona Supercomputing Center

مصطلحات موضوعية: Àrees temàtiques de la UPC::Informàtica::Aplicacions de la informàtica::Aplicacions informàtiques a la física i l‘enginyeria, Thin films, Semiconductor devices, Atomic layer deposition, HfO2, Thermal atomic layer etching (ALE), Nanoescala (Electrònica)

وصف الملف: 11 p.; application/pdf

Relation: https://aip-prod-cdn.literatumonline.com/journals/content/jva/2022/jva.2022.40.issue-2/6.0001614/20220228/suppl/supplemental_material_ahfo2_ale_modelling.pdf?b92b4ad1b4f274c70877518511abb28bed2c6f7421a565d9f7a5b3e3f5a40bc644191f5cacfb3cc9bc55304dc1c37156f8ea51e147a9f9df7ba4490c43ba408af9a38907dbd79182611f2f4f1602f33a306c6ff205e5c2c75662c0afbda550b42623be4b1d3774d9ef69f863ffb0b397eb65eb858aa89df60194efef8d8639d42a400e803659110d15d886fd5471aa8d16d62f72c372a0de8035b68ba8a17d4ade00b52999; Mullins, R.; Gutiérrez Moreno, J.J.; Nolan, M. Origin of enhanced thermal atomic layer etching of amorphous HfO2. "Journal of Vacuum Science and Technology A (JVST A)", Febrer 2022, vol. 40, núm. 2, 022604.; http://hdl.handle.net/2117/364638

الاتاحة: http://hdl.handle.net/2117/364638
https://doi.org/10.1116/6.0001614

المؤلفون: William Chiappim, Benedito Botan Neto, Michaela Shiotani, Júlia Karnopp, Luan Gonçalves, João Pedro Chaves, Argemiro da Silva Sobrinho, Joaquim Pratas Leitão, Mariana Fraga, Rodrigo Pessoa

المصدر: Nanomaterials; Volume 12; Issue 19; Pages: 3497

مصطلحات موضوعية: plasma-enhanced atomic layer deposition, plasma-assisted atomic layer deposition, radical-enhanced atomic layer deposition, plasma-atomic layer etching, ALD, non-thermal plasma, thin-film

وصف الملف: application/pdf

Relation: Nanofabrication and Nanomanufacturing; https://dx.doi.org/10.3390/nano12193497

الاتاحة: https://doi.org/10.3390/nano12193497

المؤلفون: Fangzhou Du, Yang Jiang, Zhanxia Wu, Honghao Lu, Jiaqi He, Chuying Tang, Qiaoyu Hu, Kangyao Wen, Xinyi Tang, Haimin Hong, Hongyu Yu, Qing Wang

المصدر: Crystals; Volume 12; Issue 5; Pages: 722

مصطلحات موضوعية: InAlN/GaN heterostructure, atomic layer etching, under-etching, indium clustered, surface treatment, two-dimensional electron gas density, sheet resistance

وصف الملف: application/pdf

Relation: Inorganic Crystalline Materials; https://dx.doi.org/10.3390/cryst12050722

الاتاحة: https://doi.org/10.3390/cryst12050722

المؤلفون: Yuanlu Tsai, Zhiteng Li, Shaojie Hu

المصدر: Nanomaterials; Volume 12; Issue 4; Pages: 661

مصطلحات موضوعية: spintronics, atomic layer technology, atomic layer etching, atomic layer deposition, self-limiting, reaction mechanism, atomic scale

وصف الملف: application/pdf

Relation: Nanofabrication and Nanomanufacturing; https://dx.doi.org/10.3390/nano12040661

الاتاحة: https://doi.org/10.3390/nano12040661

المؤلفون: Tom, Matthew Cheuk-Woh

مصطلحات موضوعية: Chemical engineering, Computational Chemistry, Computational Fluid Dynamics Modeling, Kinetic Monte Carlo Modeling, Multiscale Modeling, Reactor Design, Thermal Atomic Layer Etching

وصف الملف: application/pdf

URL الوصول: https://escholarship.org/uc/item/67c3f705

المؤلفون: Yantao Xia (11286240), Philippe Sautet (1268361)

مصطلحات موضوعية: Biophysics, Physiology, Biotechnology, Computational Biology, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, removal step energies, etching, plasma activation step, First Principles Plasma-thermal, removal step, removal step energy, surface, Atomic Layer Etching Chemistry, equilibrium crystal shape method, termination, model

Relation: https://figshare.com/articles/journal_contribution/Thermodynamics_of_Atomic_Layer_Etching_Chemistry_on_Copper_and_Nickel_Surfaces_from_First_Principles/15183450

الاتاحة: https://doi.org/10.1021/acs.chemmater.1c01324.s001

المؤلفون: Suresh Kondati Natarajan (3747010), Austin M. Cano (11691521), Jonathan L. Partridge (11691524), Steven M. George (1452454), Simon D. Elliott (1609582)

مصطلحات موضوعية: Biophysics, Medicine, Infectious Diseases, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, sufficient pulse time, quadrupole mass spectrometry, kinetic activation barriers, 87 ° c, 360 k ), theoretical approach allows, reaction free energies, low computational cost, chemical vapor etch, atomic layer etch, 4 , hf → tif, cve occurs according, atomic layer etching, 2 , calculations also predicted, theoretical predictions, etch reagents, etch products, combined computational, 2 torr, reactant hf, hf gas, hf exposure, test case

Relation: https://figshare.com/articles/journal_contribution/Prediction_and_Validation_of_the_Process_Window_for_Atomic_Layer_Etching_HF_Exposure_on_TiO_sub_2_sub_/17003981

الاتاحة: https://doi.org/10.1021/acs.jpcc.1c08110.s001

المؤلفون: Mahsa Konh (8385003), Anderson Janotti (4808076), Andrew Teplyakov (3357404)

مصطلحات موضوعية: Cell Biology, Physiology, Biotechnology, Evolutionary Biology, Inorganic Chemistry, Hematology, Infectious Diseases, Environmental Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, etching, chlorine-modified iron surface, surface processes, Two-Step Atomic Layer Etching Process, acacH, temperature-programmed desorption e., Fe, Acetylacetone Controlling thickness, Thermal Dry Etching, film, mechanism, Auger electron spectroscopy, X-ray photoelectron spectroscopy, chlorinated iron samples, chlorine-containing iron species

Relation: https://figshare.com/articles/journal_contribution/Molecular_Mechanism_of_Thermal_Dry_Etching_of_Iron_in_a_Two-Step_Atomic_Layer_Etching_Process_Chlorination_Followed_by_Exposure_to_Acetylacetone/14316261

الاتاحة: https://doi.org/10.1021/acs.jpcc.0c10556.s001

المؤلفون: Varun Sharma (4971478), Simon D. Elliott (1609582), Tom Blomberg (10578407), Suvi Haukka (1534369), Michael E. Givens (10578410), Marko Tuominen (10578413), Mikko Ritala (559215)

مصطلحات موضوعية: Biophysics, Microbiology, Cell Biology, Physiology, Biotechnology, Evolutionary Biology, Ecology, Space Science, Environmental Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, Al 2 O 3 surface, bright-field transmission electron ., Al 2 O 3 layer, Al 2 O 3, surface fluorine content, NbF 5 converts part, aluminum oxyfluoride layer, postetch Al 2 O 3 surfaces, CCl 4, Thermal Atomic Layer Etching, NbF 5, Si 3 N 4, X-ray photoelectron spectroscopy, depth profile analysis, Density Functional Theory Study

Relation: https://figshare.com/articles/journal_contribution/Thermal_Atomic_Layer_Etching_of_Aluminum_Oxide_Al_sub_2_sub_O_sub_3_sub_Using_Sequential_Exposures_of_Niobium_Pentafluoride_NbF_sub_5_sub_and_Carbon_Tetrachloride_CCl_sub_4_sub_A_Combined_Experimental_and_Density_Functional_Theory_Study_of_/14394305

الاتاحة: https://doi.org/10.1021/acs.chemmater.1c00142.s001

المؤلفون: Lu Xie, Huilong Zhu, Yongkui Zhang, Xuezheng Ai, Junjie Li, Guilei Wang, Anyan Du, Zhenzhen Kong, Qi Wang, Shunshun Lu, Chen Li, Yangyang Li, Weixing Huang, Henry Radamson

المصدر: Nanomaterials; Volume 11; Issue 6; Pages: 1408

مصطلحات موضوعية: vertical Gate-all-around (vGAA), p + -Ge 0.8 Si 0.2 /Ge stack, dual-selective wet etching, atomic layer etching (ALE)

وصف الملف: application/pdf

Relation: Nanoelectronics, Nanosensors and Devices; https://dx.doi.org/10.3390/nano11061408

الاتاحة: https://doi.org/10.3390/nano11061408