المؤلفون: Roberto Guido, Haidong Lu, Patrick D. Lomenzo, Thomas Mikolajick, Alexei Gruverman, Uwe Schroeder

المصدر: Advanced Science, Vol 11, Iss 16, Pp n/a-n/a (2024)

مصطلحات موضوعية: aluminum scandium nitride, domains, ferroelectricity, piezoresponse force microscopy, switching kinetics, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2198-3844

URL الوصول: https://doaj.org/article/bac153d85d1c4f2fb1809fc2bf713d5b

المؤلفون: Kyung Do Kim, Yong Bin Lee, Suk Hyun Lee, In Soo Lee, Seung Kyu Ryoo, Seungyong Byun, Jae Hoon Lee, Hani Kim, Hyeon Woo Park, Cheol Seong Hwang

المصدر: Advanced Electronic Materials, Vol 9, Iss 5, Pp n/a-n/a (2023)

مصطلحات موضوعية: aluminum scandium nitride, electric field cycling, inhomogeneous field distribution, interfacial dielectric layers, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/77e05821247b40d29ab7837383209f98

المؤلفون: Wenzheng Jiang, Lei Zhu, Lingli Chen, Yumeng Yang, Xi Yu, Xiaolong Li, Zhiqiang Mu, Wenjie Yu

المصدر: Materials; Volume 16; Issue 5; Pages: 1781

مصطلحات موضوعية: aluminum scandium nitride, synchrotron XRD, piezoelectric coefficient, substrate clamping effect, micro-electromechanical system

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/ma16051781

الاتاحة: https://doi.org/10.3390/ma16051781

المؤلفون: Hwang, Jeong-Yeon, Wysocki, Lena, Yarar, Erdem, Wille, Gunnar, Röhr, Fin, Albers, Jörg, Gu-Stoppel, Shanshan

مصطلحات موضوعية: aluminum scandium nitride (AlScN), MEMS mirror, piezoelectric actuation, quasi-static scan, resonant scan

Relation: Micromachines; #PLACEHOLDER_PARENT_METADATA_VALUE#; https://publica.fraunhofer.de/handle/publica/464192

الاتاحة: https://publica.fraunhofer.de/handle/publica/464192
https://doi.org/10.3390/mi14091789

المؤلفون: Schönweger, Georg, Islam, Md Redwanul, Wolff, Niklas, Petraru, Adrian, Kienle, Lorenz, Kohlstedt, Hermann H., Fichtner, Simon

مصطلحات موضوعية: aluminum-scandium-nitride (Al Sc N) 1-x x, epitaxial growth, ferroelectrics, gallium nitride, ultrathin

Relation: Physica status solidi. Rapid research letters; https://publica.fraunhofer.de/handle/publica/448566

الاتاحة: https://publica.fraunhofer.de/handle/publica/448566
https://doi.org/10.1002/pssr.202200312

المؤلفون: Wentong Dou, Congquan Zhou, Ruidong Qin, Yumeng Yang, Huihui Guo, Zhiqiang Mu, Wenjie Yu

المصدر: Nanomaterials, Vol 13, Iss 2737, p 2737 (2023)

مصطلحات موضوعية: bulk acoustic wave, film bulk acoustic resonator, aluminum scandium nitride, effective electromechanical coupling coefficient, spurious modes, Chemistry, QD1-999

Relation: https://www.mdpi.com/2079-4991/13/20/2737; https://doaj.org/toc/2079-4991; https://doaj.org/article/b86437a84e644aa7a6eb6b10050a8c0b

الاتاحة: https://doi.org/10.3390/nano13202737
https://doaj.org/article/b86437a84e644aa7a6eb6b10050a8c0b

المؤلفون: Kvashnin, Gennady, Sorokin, Boris, Asafiev, Nikita, Prokhorov, Viacheslav, Sotnikov, Andrei

مصطلحات موضوعية: high overtone bulk acoustic resonator (HBAR), quality factor, microwave band, ultrasonic sensor device, thin- and ultrathin-film deposition, single-crystalline diamond, aluminum nitride, aluminum–scandium nitride

Time: 530

وصف الملف: application/pdf

الاتاحة: https://oa.tib.eu/renate/handle/123456789/8621
https://doi.org/10.34657/7659

المؤلفون: Schönweger, Georg Martin, Petraru, Adrian, Islam, Md Redwanul, Wolff, Niklas, Haas, Benedikt, Hammud, Adnan, Koch, Christoph, Kienle, Lorenz, Kohlstedt, Hermann, Fichtner, Simon

مصطلحات موضوعية: article, ScholarlyArticle, Published Version, ddc:540, aluminum-scandium-nitride (Al 1-x Sc x N), epitaxial growth, ferroelectric, gallium nitride, semiconductors

Relation: Advanced functional materials : full papers, feature articles, highlights -- Adv Funct Materials -- 1616-301X -- 1616-3028 -- 1616-301X; https://doi.org/10.1002/adfm.202109632; https://nbn-resolving.org/urn:nbn:de:gbv:8:3-2024-00549-0; https://macau.uni-kiel.de/receive/macau_mods_00004834; https://macau.uni-kiel.de/servlets/MCRFileNodeServlet/macau_derivate_00006137/Adv%20Funct%20Materials%20-%202022%20-%20Schönweger%20-%20From%20Fully%20Strained%20to%20Relaxed%20Epitaxial%20Ferroelectric%20Al1‐xScxN%20for%20III‐N.pdf

الاتاحة: https://doi.org/10.1002/adfm.202109632
https://nbn-resolving.org/urn:nbn:de:gbv:8:3-2024-00549-0
https://macau.uni-kiel.de/receive/macau_mods_00004834
https://macau.uni-kiel.de/servlets/MCRFileNodeServlet/macau_derivate_00006137/Adv%20Funct%20Materials%20-%202022%20-%20Schönweger%20-%20From%20Fully%20Strained%20to%20Relaxed%20Epitaxial%20Ferroelectric%20Al1‐xScxN%20for%20III‐N.pdf

المؤلفون: Balestra L., Gnani E., Reggiani S.

المساهمون: Balestra L., Gnani E., Reggiani S.

مصطلحات موضوعية: effective masse, Aluminum-Scandium Nitride, wide bandgap, DFT

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000894312900003; volume:132; issue:21; firstpage:1; lastpage:6; numberofpages:6; journal:JOURNAL OF APPLIED PHYSICS; https://hdl.handle.net/11585/923751; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85144254612; https://pubs.aip.org/aip/jap/article/132/21/215108/2837997/Electron-effective-masses-of-ScxAl1-xN-and-AlxGa1

الاتاحة: https://hdl.handle.net/11585/923751
https://doi.org/10.1063/5.0115512
https://pubs.aip.org/aip/jap/article/132/21/215108/2837997/Electron-effective-masses-of-ScxAl1-xN-and-AlxGa1

المؤلفون: Laixia Nian, Yang Zou, Chao Gao, Yu Zhou, Yuchen Fan, Jian Wang, Wenjuan Liu, Yan Liu, Jeffrey Bowoon Soon, Yao Cai, Chengliang Sun

المصدر: Micromachines; Volume 13; Issue 12; Pages: 2044

مصطلحات موضوعية: film bulk acoustic resonator, aluminum scandium nitride, composite film, effective electromechanical coupling coefficient

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/mi13122044

الاتاحة: https://doi.org/10.3390/mi13122044

المؤلفون: Stephan Barth, Tom Schreiber, Steffen Cornelius, Olaf Zywitzki, Thomas Modes, Hagen Bartzsch

المصدر: Micromachines; Volume 13; Issue 10; Pages: 1561

مصطلحات موضوعية: AlScN, aluminum scandium nitride, piezoelectric thin films, piezoelectric, ferroelectric

وصف الملف: application/pdf

Relation: D：Materials and Processing; https://dx.doi.org/10.3390/mi13101561

الاتاحة: https://doi.org/10.3390/mi13101561

المؤلفون: Asaf Cohen, Hagai Cohen, Sidney R. Cohen, Sergey Khodorov, Yishay Feldman, Anna Kossoy, Ifat Kaplan-Ashiri, Anatoly Frenkel, Ellen Wachtel, Igor Lubomirsky, David Ehre

المصدر: Sensors; Volume 22; Issue 18; Pages: 7041

مصطلحات موضوعية: aluminum scandium nitride, sputtering, seeding layer, texture, piezoelectric

وصف الملف: application/pdf

Relation: Physical Sensors; https://dx.doi.org/10.3390/s22187041

الاتاحة: https://doi.org/10.3390/s22187041

المؤلفون: Niklas Wolff, Md Redwanul Islam, Lutz Kirste, Simon Fichtner, Fabian Lofink, Agnė Žukauskaitė, Lorenz Kienle

المصدر: Micromachines; Volume 13; Issue 8; Pages: 1282

مصطلحات موضوعية: aluminum scandium nitride, thermal stability, structure analysis, X-ray diffraction, ferroelectrics

وصف الملف: application/pdf

Relation: D：Materials and Processing; https://dx.doi.org/10.3390/mi13081282

الاتاحة: https://doi.org/10.3390/mi13081282

المؤلفون: Rossiny Beaucejour, Michael D’Agati, Kritank Kalyan, Roy H. Olsson

المصدر: Micromachines; Volume 13; Issue 8; Pages: 1169

مصطلحات موضوعية: aluminum scandium nitride, physical vapor deposition, stress, stress gradient, fabrication, cantilever beams, MEMS

وصف الملف: application/pdf

Relation: D：Materials and Processing; https://dx.doi.org/10.3390/mi13081169

الاتاحة: https://doi.org/10.3390/mi13081169

المؤلفون: Zichen Tang, Giovanni Esteves, Jeffrey Zheng, Roy H. Olsson

المصدر: Micromachines; Volume 13; Issue 7; Pages: 1066

مصطلحات موضوعية: aluminum scandium nitride (AlScN), aluminum nitride (AlN), wet etch, potassium hydroxide (KOH), ferroelectric

وصف الملف: application/pdf

Relation: D：Materials and Processing; https://dx.doi.org/10.3390/mi13071066

الاتاحة: https://doi.org/10.3390/mi13071066

المؤلفون: Chris Stoeckel, Katja Meinel, Marcel Melzer, Agnė Žukauskaitė, Sven Zimmermann, Roman Forke, Karla Hiller, Harald Kuhn

المصدر: Micromachines; Volume 13; Issue 4; Pages: 625

مصطلحات موضوعية: AlN, AlScN, aluminum nitride, aluminum scandium nitride, micromirror, microscanner, piezoelectric

وصف الملف: application/pdf

Relation: D：Materials and Processing; https://dx.doi.org/10.3390/mi13040625

الاتاحة: https://doi.org/10.3390/mi13040625

المؤلفون: Gennady Kvashnin, Boris Sorokin, Nikita Asafiev, Viacheslav Prokhorov, Andrei Sotnikov

المصدر: Electronics; Volume 11; Issue 2; Pages: 176

مصطلحات موضوعية: high overtone bulk acoustic resonator (HBAR), quality factor, microwave band, ultrasonic sensor device, thin- and ultrathin-film deposition, single-crystalline diamond, aluminum nitride, aluminum–scandium nitride

وصف الملف: application/pdf

Relation: Microelectronics; https://dx.doi.org/10.3390/electronics11020176

الاتاحة: https://doi.org/10.3390/electronics11020176

المؤلفون: Pariasadat Musavigharavi (10681135), Andrew C. Meng (2810863), Dixiong Wang (10681126), Jeffery Zheng (11022497), Alexandre C. Foucher (6592982), Roy H. Olsson (2238781), Eric A. Stach (1269663)

مصطلحات موضوعية: Biophysics, Biochemistry, Medicine, Biotechnology, Infectious Diseases, Computational Biology, Space Science, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, chemical composition, Pt template decreases, strain map, epitaxial growth, out-of-plane component, Chemical Properties, nanoscale order, Ferroelectric Aluminum Scandium Nitride, ultrathin films, AlScN film thickness, Sc alloying concentration, microelectromechanical systems, TEM, DC co-sputtering, Nanoscale Structural, aluminum scandium nitride, nanoscale chemistry, transmission electron microscopy, strain distribution, lattice parameter, crystal structure

Relation: https://figshare.com/articles/journal_contribution/Nanoscale_Structural_and_Chemical_Properties_of_Ferroelectric_Aluminum_Scandium_Nitride_Thin_Films/14842571

الاتاحة: https://doi.org/10.1021/acs.jpcc.1c01523.s001

المؤلفون: Streicher, Isabel, Unav

مصطلحات موضوعية: aluminum scandium nitride, aluminum yttrium nitride, metal-organic chemical vapour deposition, two-dimensional electron gas, high-electron mobility transistor

الاتاحة: https://dx.doi.org/10.24406/publica-3744
https://publica.fraunhofer.de/handle/publica/480818

المؤلفون: Manz, Christian, Leone, Stefano, Kirste, Lutz, Ligl, Jana, Frei, Kathrin, Fuchs, Theodor, Prescher, Mario, Waltereit, Patrick, Verheijen, Marcel A., Graff, Andreas, Simon-Najasek, Michél, Altmann, Frank, Fiederle, Michael, Ambacher, Oliver

المصدر: Manz , C , Leone , S , Kirste , L , Ligl , J , Frei , K , Fuchs , T , Prescher , M , Waltereit , P , Verheijen , M A , Graff , A , Simon-Najasek , M , Altmann , F , Fiederle , M & Ambacher , O 2021 , ' Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition ' , Semiconductor Science and Technology , vol. 36 , no. 3 , 034003 . https://doi.org/10.1088/1361-6641/abd924

مصطلحات موضوعية: AlScN, Aluminum scandium nitride, Atom diffusion, High electron mobility transistor, MOCVD, ScAlN

الاتاحة: https://research.tue.nl/en/publications/7ccf1c09-6fd6-47c8-b1cb-6f64b0c5c171
https://doi.org/10.1088/1361-6641/abd924
http://www.scopus.com/inward/record.url?scp=85100343311&partnerID=8YFLogxK