المؤلفون: Yang, Yupeng, Khaksaran, Mohammad Hadi, An, Jong Bin, Lee, Sujin, Kim, Hyun Jae, Johansson, Ted, Lu, Xi, Sychugov, Ilya, Dev, Apurba, Zhang, Shi-Li

المصدر: ACS Applied Optical Materials. 2(10):2092-2100

مصطلحات موضوعية: a-IGZO thin film, phototransistor, upconversion nanoparticles, Förster resonance energy transfer, specific biosensing

وصف الملف: electronic

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-538766
https://doi.org/10.1021/acsaom.4c00310
https://uu.diva-portal.org/smash/get/diva2:1899531/FULLTEXT03.pdf

المؤلفون: Tsung-Cheng Tien, Jyun-Sheng Wu, Tsung-Eong Hsieh, Hsin-Jay Wu

المصدر: Coatings; Volume 12; Issue 8; Pages: 1217

مصطلحات موضوعية: IGZO sputtering target, Ga content, a -IGZO thin-film transistors

وصف الملف: application/pdf

Relation: Thin Films; https://dx.doi.org/10.3390/coatings12081217

الاتاحة: https://doi.org/10.3390/coatings12081217

المؤلفون: Tsung-Cheng Tien, Tsung-Eong Hsieh, Yih-Shing Lee, Yu-Hsin Wang, Ming-Ling Lee

المصدر: Coatings; Volume 12; Issue 3; Pages: 383

مصطلحات موضوعية: O 2 plasma time and annealing, hysteresis, top-gate IGZO thin-film transistors, TEOS oxide gate dielectrics

وصف الملف: application/pdf

Relation: Thin Films; https://dx.doi.org/10.3390/coatings12030383

الاتاحة: https://doi.org/10.3390/coatings12030383

المؤلفون: Cheng-Chao Pan, Shi-Bo Yang, Long-Long Chen, Ji-Feng Shi, Xiang Sun, Xi-Feng Li, Jian-Hua Zhang

المصدر: IEEE Journal of the Electron Devices Society, Vol 8, Pp 524-529 (2020)

مصطلحات موضوعية: a-IGZO thin film transistor, UV irradiation, stability, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9079913/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/d63cc6f1e6a447eeb47965ef94c93cc6

المؤلفون: Rauf Khan, Michitaka Ohtaki, Satoshi Hata, Koji Miyazaki, Reiji Hattori

المصدر: Nanomaterials; Volume 11; Issue 6; Pages: 1547

مصطلحات موضوعية: IGZO thin film, three-omega method, thermal conductivity, nano crystallinity, transmission electron microscopy

وصف الملف: application/pdf

Relation: Synthesis, Interfaces and Nanostructures; https://dx.doi.org/10.3390/nano11061547

الاتاحة: https://doi.org/10.3390/nano11061547

المؤلفون: Xiao Wang, Zhihua Shen, Jie Li, Shengli Wu

المصدر: Membranes; Volume 11; Issue 2; Pages: 134

مصطلحات موضوعية: indium gallium zinc oxide (IGZO) thin film, RF sputtering, c-axis aligned crystal IGZO, corrosion resistance

وصف الملف: application/pdf

Relation: Polymeric Membranes; https://dx.doi.org/10.3390/membranes11020134

الاتاحة: https://doi.org/10.3390/membranes11020134

المؤلفون: Yih-Shing Lee, Yu-Hsin Wang, Tsung-Cheng Tien, Tsung-Eong Hsieh, Chun-Hung Lai

المصدر: Coatings; Volume 10; Issue 12; Pages: 1146

مصطلحات موضوعية: top-gate a-IGZO thin-film transistors, gate dielectrics, electrical characteristics, stability, hysteresis

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/coatings10121146

الاتاحة: https://doi.org/10.3390/coatings10121146

المؤلفون: Jihwan Park, Do-Kyung Kim, Jun-Ik Park, In Man Kang, Jaewon Jang, Hyeok Kim, Philippe Lang, Jin-Hyuk Bae

المصدر: Electronics; Volume 9; Issue 1; Pages: 119

مصطلحات موضوعية: a-IGZO thin-film transistors, effective mass, numerical simulation, electrical characteristics, scattering

وصف الملف: application/pdf

Relation: Semiconductor Devices; https://dx.doi.org/10.3390/electronics9010119

الاتاحة: https://doi.org/10.3390/electronics9010119

المؤلفون: Wonkuk Seo, Jae-Eun Pi, Sung Cho, Seung-Youl Kang, Seong-Deok Ahn, Chi-Sun Hwang, Ho-Sik Jeon, Jong-Uk Kim, Myunghee Lee

المصدر: Sensors; Volume 18; Issue 1; Pages: 293

مصطلحات موضوعية: fingerprint, transparent, a-IGZO thin film transistors (TFTs), sensor array, readout integrated circuit (ROIC)

وصف الملف: application/pdf

Relation: Physical Sensors; https://dx.doi.org/10.3390/s18010293

الاتاحة: https://doi.org/10.3390/s18010293

المؤلفون: Kumar, A, Flewitt, AJ

مصطلحات موضوعية: Circuit simulation, flexible circuits and display, high-throughput electrical testing, IGZO thin-film transistors (TFTs)

وصف الملف: application/pdf

Relation: https://www.repository.cam.ac.uk/handle/1810/249035

الاتاحة: https://www.repository.cam.ac.uk/handle/1810/249035

المؤلفون: Satoshi Hata, Michitaka Ohtaki, Reiji Hattori, Koji Miyazaki, Rauf Ul Karim Khan

المصدر: Nanomaterials
Volume 11
Issue 6
Nanomaterials, Vol 11, Iss 1547, p 1547 (2021)

مصطلحات موضوعية: Materials science, General Chemical Engineering, Analytical chemistry, Oxide, IGZO thin film, 02 engineering and technology, Substrate (electronics), 01 natural sciences, Article, chemistry.chemical_compound, Thermal conductivity, transmission electron microscopy, 0103 physical sciences, thermal conductivity, General Materials Science, Thin film, QD1-999, 010302 applied physics, Indium gallium zinc oxide, Sputter deposition, 021001 nanoscience & nanotechnology, Thermal conduction, Nanocrystalline material, Chemistry, chemistry, three-omega method, nano crystallinity, 0210 nano-technology

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea91a6704a280781b1c8314ebfab6f07
https://pubmed.ncbi.nlm.nih.gov/34208185

المؤلفون: Chun Hung Lai, Lee Yih-Shing, Tsung Eong Hsieh, Wang Yu-Hsin, Tsung Cheng Tien

المصدر: Coatings, Vol 10, Iss 1146, p 1146 (2020)
Coatings
Volume 10
Issue 12

مصطلحات موضوعية: Materials science, Gate dielectric, Oxide, electrical characteristics, 02 engineering and technology, Dielectric, 01 natural sciences, law.invention, Stress (mechanics), chemistry.chemical_compound, law, 0103 physical sciences, Materials Chemistry, 010302 applied physics, top-gate a-IGZO thin-film transistors, business.industry, gate dielectrics, Transistor, Surfaces and Interfaces, stability, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Hysteresis, chemistry, hysteresis, Thin-film transistor, lcsh:TA1-2040, Optoelectronics, 0210 nano-technology, business, lcsh:Engineering (General). Civil engineering (General), AND gate

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c33081f09c5bcd2ce28b9863d1d64a1
https://www.mdpi.com/2079-6412/10/12/1146

المؤلفون: Zhang, Panpan, Samanta, Subhranu, Fong, Xuanyao

المساهمون: ELECTRICAL AND COMPUTER ENGINEERING

المصدر: Elements

مصطلحات موضوعية: Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Amorphous InGaZnO (a-IGZO) thin-film transistor (TFT), interface engineering, passivation layer (PVL), technology computer-aided design (TCAD), A-IGZO TFTS

Relation: Zhang, Panpan, Samanta, Subhranu, Fong, Xuanyao (2020-06). Physical Insights Into the Mobility Enhancement in Amorphous InGaZnO Thin-Film Transistor by SiO 2 Passivation Layer. IEEE TRANSACTIONS ON ELECTRON DEVICES 67 (6) : 2352-2358. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2020.2989105; https://scholarbank.nus.edu.sg/handle/10635/245802

الاتاحة: https://scholarbank.nus.edu.sg/handle/10635/245802

المؤلفون: Eugenio Cantatore, Fabrizio Torricelli, Zsolt Miklós Kovács-Vajna, Matteo Ghittorelli, Gerwin H. Gelinck, Luigi Colalongo, Carmine Garripoli, Jan-Laurens van der Steen

المساهمون: Integrated Circuits, Molecular Materials and Nanosystems, Emerging Technologies

المصدر: IEEE Transactions on Electron Devices, 64(3):7820165, 1076-1082. Institute of Electrical and Electronics Engineers

مصطلحات موضوعية: a-IGZO thin-film transistors (TFTs), analytical model, physical model, TFT, unipolar inverter, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Materials science, Thermionic emission, 02 engineering and technology, 01 natural sciences, law.invention, law, 0103 physical sciences, Electronic, Optical and Magnetic Materials, 010302 applied physics, business.industry, Transistor, Electrical engineering, Charge (physics), 021001 nanoscience & nanotechnology, Amorphous solid, Semiconductor, Thin-film transistor, Logic gate, Optoelectronics, 0210 nano-technology, business, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3046323ae533c8e95a256389941f7217
https://doi.org/10.1109/ted.2016.2646369

المؤلفون: Zsolt Miklós Kovács-Vajna, Matteo Ghittorelli, Fabrizio Torricelli

المصدر: IEEE Electron Device Letters. 36:1340-1343

مصطلحات موضوعية: Indium gallium zinc oxide, Materials science, Condensed matter physics, Circuit design, Transistor, Degenerate energy levels, Analytical modelling, degenerate conduction, Thermal conduction, Electronic, Optical and Magnetic Materials, law.invention, Amorphous solid, Condensed Matter::Materials Science, a-IGZO thin-film transistor, law, Thin-film transistor, Logic gate, Electronic, Electronic engineering, Optical and Magnetic Materials, Electrical and Electronic Engineering

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cda8fbef4e1f95dbe2501dbbcfdaca3
https://doi.org/10.1109/led.2015.2495326

المؤلفون: Ghittorelli, M., Torricelli, F., Garripoli, C., van der Steen, J.L., Gelinck, G.H., Cantatore, E., Colalongo, L., Kovács-Vajna, Z.M.

المصدر: Ghittorelli , M , Torricelli , F , Garripoli , C , van der Steen , J L , Gelinck , G H , Cantatore , E , Colalongo , L & Kovács-Vajna , Z M 2017 , ' Unified physical DC model of staggered amorphous InGaZnO transistors ' , IEEE Transactions on Electron Devices , vol. 64 , no. 3 , 7820165 , pp. 1076 - 1082 . https://doi.org/10.1109/TED.2016.2646369

مصطلحات موضوعية: TFT, a-IGZO thin-film transistors (TFTs), analytical model, physical model, unipolar inverter

الاتاحة: https://research.tue.nl/en/publications/b607d290-c910-4a45-8f3c-61b0d4691659
https://doi.org/10.1109/TED.2016.2646369
http://www.scopus.com/inward/record.url?scp=85009987979&partnerID=8YFLogxK

المؤلفون: Cho, Y.-J., Lee, Y.-H., Kim, W.-S., Kim, B.-K., Park, K.T., Kim, O.

المساهمون: Kim, W.-S., Kim, O.

مصطلحات موضوعية: Amorphous films, Amorphous semiconductors, Bias voltage, Indium, Oxide semiconductors, Oxygen vacancies, Semiconducting indium compounds, Thin film circuits, Thin film transistors, Thin films, Threshold voltage, Transistors, Amorphous indiumgallium-zinc oxide (a-IGZO) thin-film transistor (TFTs), Amorphous InGaZnO, InGaZnO, IV characteristics, Positive bias temperatures, Positive gate bias, Sub-threshold regions, Temperature stress, Amorphous materials, THIN-FILM TRANSISTORS, MODEL, I-V characteristics

Relation: Physica Status Solidi (A) Applications and Materials Science; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter; Materials Science; Physics; https://oasis.postech.ac.kr/handle/2014.oak/92104; 29686; Physica Status Solidi (A) Applications and Materials Science, v.214, no.5; 000402913400002; 2-s2.0-85007560075

الاتاحة: https://oasis.postech.ac.kr/handle/2014.oak/92104
https://doi.org/10.1002/pssa.201600503

المؤلفون: GHITTORELLI, MATTEO, TORRICELLI, Fabrizio, KOVACS VAJNA, Zsolt Miklos

المساهمون: Ghittorelli Matteo, Torricelli Fabrizio, KOVACS VAJNA Zsolt Miklos

مصطلحات موضوعية: a-IGZO thin-film transistor, Analytical modelling, degenerate conduction, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

وصف الملف: STAMPA

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000365295300024; volume:36; firstpage:1340; lastpage:1343; numberofpages:4; journal:IEEE ELECTRON DEVICE LETTERS; http://hdl.handle.net/11379/469948; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-84959458270

الاتاحة: http://hdl.handle.net/11379/469948
https://doi.org/10.1109/LED.2015.2495326

المؤلفون: Myny, K., Cobb, B., Steen, J.L. van der, Tripathi, A.K., Genoe, J., Gelinck, G., Heremans, P.

المصدر: Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 58, 294-295

مصطلحات موضوعية: Electronics, Amorphous films, Amorphous semiconductors, Gallium alloys, Indium, Semiconducting indium compounds, Thin film transistors, Amorphous indiumgallium-zinc oxide (a-IGZO) thin-film transistor (TFTs), Flexible thin films, Low costs, Low temperatures, Thin film circuits, Industrial Innovation, Nano Technology, HOL - Holst, TS - Technical Sciences

Relation: uuid:8db826c0-d579-40b0-a9f2-843f1ce2db53; 527975; http://resolver.tudelft.nl/uuid:8db826c0-d579-40b0-a9f2-843f1ce2db53

الاتاحة: http://resolver.tudelft.nl/uuid:8db826c0-d579-40b0-a9f2-843f1ce2db53

المؤلفون: Li, Ya, Pei, Yanli, Hu, Ruiqin, Chen, Zimin, Ni, Yiqiang, Lin, Jiayong, Chen, Yiting, Zhang, Xiaoke, Shen, Zhen, Liang, Jun, Fan, Bingfeng, Wang, Gang, Duan, He

المساهمون: Li, Y (reprint author), Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China., Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China., Peking Univ, Shenzhen Graduated Sch, Shenzhen 518055, Peoples R China., Guangdong Univ Technol, Sch Phys & Optoelect Engn, Guangzhou 510006, Guangdong, Peoples R China.

المصدر: SCI ; EI

مصطلحات موضوعية: Amorphous-indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT), Atomic layer deposited alumina (ALD), charge trapping, nonvolatile memory (NVM), DISPLAY

Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES.2015,62,(4),1184-1188.; 747724; http://hdl.handle.net/20.500.11897/206025; WOS:000351753900016

الاتاحة: https://hdl.handle.net/20.500.11897/206025
https://doi.org/10.1109/TED.2015.2402220