المؤلفون: Tsung-Cheng Tien, Jyun-Sheng Wu, Tsung-Eong Hsieh, Hsin-Jay Wu

المصدر: Coatings; Volume 12; Issue 8; Pages: 1217

مصطلحات موضوعية: IGZO sputtering target, Ga content, a -IGZO thin-film transistors

وصف الملف: application/pdf

Relation: Thin Films; https://dx.doi.org/10.3390/coatings12081217

الاتاحة: https://doi.org/10.3390/coatings12081217

المؤلفون: Tsung-Cheng Tien, Tsung-Eong Hsieh, Yih-Shing Lee, Yu-Hsin Wang, Ming-Ling Lee

المصدر: Coatings; Volume 12; Issue 3; Pages: 383

مصطلحات موضوعية: O 2 plasma time and annealing, hysteresis, top-gate IGZO thin-film transistors, TEOS oxide gate dielectrics

وصف الملف: application/pdf

Relation: Thin Films; https://dx.doi.org/10.3390/coatings12030383

الاتاحة: https://doi.org/10.3390/coatings12030383

المؤلفون: Yih-Shing Lee, Yu-Hsin Wang, Tsung-Cheng Tien, Tsung-Eong Hsieh, Chun-Hung Lai

المصدر: Coatings; Volume 10; Issue 12; Pages: 1146

مصطلحات موضوعية: top-gate a-IGZO thin-film transistors, gate dielectrics, electrical characteristics, stability, hysteresis

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/coatings10121146

الاتاحة: https://doi.org/10.3390/coatings10121146

المؤلفون: Jihwan Park, Do-Kyung Kim, Jun-Ik Park, In Man Kang, Jaewon Jang, Hyeok Kim, Philippe Lang, Jin-Hyuk Bae

المصدر: Electronics; Volume 9; Issue 1; Pages: 119

مصطلحات موضوعية: a-IGZO thin-film transistors, effective mass, numerical simulation, electrical characteristics, scattering

وصف الملف: application/pdf

Relation: Semiconductor Devices; https://dx.doi.org/10.3390/electronics9010119

الاتاحة: https://doi.org/10.3390/electronics9010119

المؤلفون: Wonkuk Seo, Jae-Eun Pi, Sung Cho, Seung-Youl Kang, Seong-Deok Ahn, Chi-Sun Hwang, Ho-Sik Jeon, Jong-Uk Kim, Myunghee Lee

المصدر: Sensors; Volume 18; Issue 1; Pages: 293

مصطلحات موضوعية: fingerprint, transparent, a-IGZO thin film transistors (TFTs), sensor array, readout integrated circuit (ROIC)

وصف الملف: application/pdf

Relation: Physical Sensors; https://dx.doi.org/10.3390/s18010293

الاتاحة: https://doi.org/10.3390/s18010293

المؤلفون: Kumar, A, Flewitt, AJ

مصطلحات موضوعية: Circuit simulation, flexible circuits and display, high-throughput electrical testing, IGZO thin-film transistors (TFTs)

وصف الملف: application/pdf

Relation: https://www.repository.cam.ac.uk/handle/1810/249035

الاتاحة: https://www.repository.cam.ac.uk/handle/1810/249035

المؤلفون: Chun Hung Lai, Lee Yih-Shing, Tsung Eong Hsieh, Wang Yu-Hsin, Tsung Cheng Tien

المصدر: Coatings, Vol 10, Iss 1146, p 1146 (2020)
Coatings
Volume 10
Issue 12

مصطلحات موضوعية: Materials science, Gate dielectric, Oxide, electrical characteristics, 02 engineering and technology, Dielectric, 01 natural sciences, law.invention, Stress (mechanics), chemistry.chemical_compound, law, 0103 physical sciences, Materials Chemistry, 010302 applied physics, top-gate a-IGZO thin-film transistors, business.industry, gate dielectrics, Transistor, Surfaces and Interfaces, stability, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Hysteresis, chemistry, hysteresis, Thin-film transistor, lcsh:TA1-2040, Optoelectronics, 0210 nano-technology, business, lcsh:Engineering (General). Civil engineering (General), AND gate

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c33081f09c5bcd2ce28b9863d1d64a1
https://www.mdpi.com/2079-6412/10/12/1146

المؤلفون: Eugenio Cantatore, Fabrizio Torricelli, Zsolt Miklós Kovács-Vajna, Matteo Ghittorelli, Gerwin H. Gelinck, Luigi Colalongo, Carmine Garripoli, Jan-Laurens van der Steen

المساهمون: Integrated Circuits, Molecular Materials and Nanosystems, Emerging Technologies

المصدر: IEEE Transactions on Electron Devices, 64(3):7820165, 1076-1082. Institute of Electrical and Electronics Engineers

مصطلحات موضوعية: a-IGZO thin-film transistors (TFTs), analytical model, physical model, TFT, unipolar inverter, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Materials science, Thermionic emission, 02 engineering and technology, 01 natural sciences, law.invention, law, 0103 physical sciences, Electronic, Optical and Magnetic Materials, 010302 applied physics, business.industry, Transistor, Electrical engineering, Charge (physics), 021001 nanoscience & nanotechnology, Amorphous solid, Semiconductor, Thin-film transistor, Logic gate, Optoelectronics, 0210 nano-technology, business, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3046323ae533c8e95a256389941f7217
https://doi.org/10.1109/ted.2016.2646369

المؤلفون: Ghittorelli, M., Torricelli, F., Garripoli, C., van der Steen, J.L., Gelinck, G.H., Cantatore, E., Colalongo, L., Kovács-Vajna, Z.M.

المصدر: Ghittorelli , M , Torricelli , F , Garripoli , C , van der Steen , J L , Gelinck , G H , Cantatore , E , Colalongo , L & Kovács-Vajna , Z M 2017 , ' Unified physical DC model of staggered amorphous InGaZnO transistors ' , IEEE Transactions on Electron Devices , vol. 64 , no. 3 , 7820165 , pp. 1076 - 1082 . https://doi.org/10.1109/TED.2016.2646369

مصطلحات موضوعية: TFT, a-IGZO thin-film transistors (TFTs), analytical model, physical model, unipolar inverter

الاتاحة: https://research.tue.nl/en/publications/b607d290-c910-4a45-8f3c-61b0d4691659
https://doi.org/10.1109/TED.2016.2646369
http://www.scopus.com/inward/record.url?scp=85009987979&partnerID=8YFLogxK

المؤلفون: Wu, Shih-Chieh, Feng, Hsien-Tsung, Yu, Ming-Jiue, Wang, I-Ting, Hou, Tuo-Hung

المساهمون: 電子工程學系及電子研究所, Department of Electronics Engineering and Institute of Electronics

مصطلحات موضوعية: Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs), flexible electronics, random access memory (RRAM), resistive switching, three-bit-per-cell

Relation: http://dx.doi.org/10.1109/LED.2013.2278098; http://hdl.handle.net/11536/22688; IEEE ELECTRON DEVICE LETTERS; WOS:000325186600020

الاتاحة: http://hdl.handle.net/11536/22688
https://doi.org/10.1109/LED.2013.2278098

المؤلفون: Huang, Xiaoming, Wu, Chenfei, Lu, Hai, Ren, Fang-Fang, Chen, Dunjun, Jiang, Rong, Zhang, R., Zheng, Youdou, Xu, Qingyu

المصدر: Solid-State Electronics

مصطلحات الفهرس: Keywords: Carrier transport mechanisms; Carrier transport process; Channel conductance; Field-effect mobilities; Gate bias dependence; Indium gallium zinc oxides; Temperature increase; Transport mechanism; Carrier transport; Electric properties; Gallium; Indium; Te Indium gallium zinc oxide (IGZO); Thin film transistors (TFT); Transport mechanisms, Journal article

URL: http://hdl.handle.net/1885/62338