نتائج البحث - "Zhu, Hui‐Long"

1

Academic Journal

Numerical predictions of internal waves and surface thermal signatures by underwater vehicles in density-stratified water using OpenFOAM

المؤلفون: Wang, Cheng-An, Zhang, Hao, Zhu, Hui-Long

المساهمون: National Natural Science Foundation of China, Natural Science Foundation of Shandong Province

المصدر: Ocean Engineering ; volume 272, page 113847 ; ISSN 0029-8018

الاتاحة: http://dx.doi.org/10.1016/j.oceaneng.2023.113847
https://api.elsevier.com/content/article/PII:S0029801823002317?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0029801823002317?httpAccept=text/plain

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2

Academic Journal

Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET

المؤلفون: Xie, Xin, Bi, Da-Wei, Hu, Zhi-Yuan, Zhu, Hui-Long, Zhang, Meng-Ying, Zhang, Zheng-Xuan, Zou, Shi-Chang

المصدر: Chinese Physics B ; volume 27, issue 12, page 128501 ; ISSN 1674-1056

الاتاحة: http://dx.doi.org/10.1088/1674-1056/27/12/128501
https://iopscience.iop.org/article/10.1088/1674-1056/27/12/128501/pdf
https://iopscience.iop.org/article/10.1088/1674-1056/27/12/128501

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3

Academic Journal

Design, Synthesis and Biological Evaluation of Novel 2‐Phenylthiazole Derivatives for the Treatment of Alzheimer's Disease

المؤلفون: Shi, Da‐Hua, Tang, Zong‐ming, Liu, Yu‐Wei, Harjani, Jitendra R., Zhu, Hui‐Long, Ma, Xiao‐Dong, Song, Xiao‐Kai, Liu, Wei‐Wei, Lu, Chen, Yang, Wen‐Tao, Song, Meng‐Qiu

المساهمون: Jiangsu higher education institutions are gratefully acknowledged

المصدر: ChemistrySelect ; volume 2, issue 32, page 10572-10579 ; ISSN 2365-6549 2365-6549

الاتاحة: http://dx.doi.org/10.1002/slct.201702087
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fslct.201702087
http://onlinelibrary.wiley.com/wol1/doi/10.1002/slct.201702087/fullpdf

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4

Academic Journal

Synthesis and Evaluation of 5-Benzyl-1,3,4-Thiadiazole Derivatives as Acetylcholinesterase Inhibitors

المؤلفون: Shi, Da-Hua, Zhu, Hui-Long, Liu, Yu-Wei, Tang, Zong-Ming, Lu, Chen, Ma, Xiao-Dong, Song, Xiao-Kai, Liu, Wei-Wei, Dong, Tong, Song, Meng-Qiu

المصدر: Journal of Chemical Research ; volume 41, issue 11, page 664-667 ; ISSN 1747-5198 2047-6507

الاتاحة: http://dx.doi.org/10.3184/174751917x15094552081242
http://journals.sagepub.com/doi/pdf/10.3184/174751917X15094552081242

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5

Academic Journal

Hetero-Epitaxy and Self-Adaptive Stressor Based on Freestanding Fin for the 10 nm Node and Beyond

المؤلفون: Wan, Guang-Xing, Wang, Gui-Lei, Zhu, Hui-Long

المصدر: Chinese Physics Letters ; volume 34, issue 7, page 078502 ; ISSN 0256-307X 1741-3540

الاتاحة: http://dx.doi.org/10.1088/0256-307x/34/7/078502
https://iopscience.iop.org/article/10.1088/0256-307X/34/7/078502/pdf
https://iopscience.iop.org/article/10.1088/0256-307X/34/7/078502

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6

Academic Journal

Crystallization behaviors of ultrathin Al-doped HfO 2 amorphous films grown by atomic layer deposition

المؤلفون: Ma, Xue-Li, Yang, Hong, Xiang, Jin-Juan, Wang, Xiao-Lei, Wang, Wen-Wu, Zhang, Jian-Qi, Yin, Hua-Xiang, Zhu, Hui-Long, Zhao, Chao

المصدر: Chinese Physics B ; volume 26, issue 2, page 027701 ; ISSN 1674-1056

الاتاحة: http://dx.doi.org/10.1088/1674-1056/26/2/027701
https://iopscience.iop.org/article/10.1088/1674-1056/26/2/027701/pdf
https://iopscience.iop.org/article/10.1088/1674-1056/26/2/027701

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7

Academic Journal

Synthesis, Characterisation and Acetylcholinesterase-Inhibition Activities of 5-benzyl-1,3,4-thiadiazol-2-amine Derivatives

المؤلفون: Zhu, Hui-Long, Liu, Yu-Wei, Liu, Wei-Wei, Yin, Fu-Jun, Cao, Zhi-Ling, Bao, Juan, Li, Meng, Qin, Ling-Yan, Shi, Da-Hua

المصدر: Journal of Chemical Research ; volume 40, issue 1, page 16-20 ; ISSN 1747-5198 2047-6507

الاتاحة: http://dx.doi.org/10.3184/174751916x14494964318204
http://journals.sagepub.com/doi/pdf/10.3184/174751916X14494964318204

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8

Academic Journal

Synthesis, crystal structures, and biological activity of zinc(II) complexes derived from 2-amino-1,3,4-thiadiazole derivatives

المؤلفون: Zhu, Hui-Long, Liu, Yu-Wei, Tang, Zong-Ming, Yin, Fu-Jun, Liu, Wei-Wei, Cao, Zhi-Ling, Bao, Juan, Li, Meng, Qin, Ling-Yan, Shi, Da-Hua

المصدر: Inorganic and Nano-Metal Chemistry ; volume 47, issue 1, page 78-81 ; ISSN 2470-1556 2470-1564

الاتاحة: http://dx.doi.org/10.1080/15533174.2016.1149723
https://www.tandfonline.com/doi/pdf/10.1080/15533174.2016.1149723

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9

Academic Journal

High-Mobility P-Type MOSFETs with Integrated Strained-Si 0.73 Ge 0.27 Channels and High-κ/Metal Gates

المؤلفون: Mao, Shu-Juan, Zhu, Zheng-Yong, Wang, Gui-Lei, Zhu, Hui-Long, Li, Jun-Feng, Zhao, Chao

المصدر: Chinese Physics Letters ; volume 33, issue 11, page 118502 ; ISSN 0256-307X 1741-3540

الاتاحة: http://dx.doi.org/10.1088/0256-307x/33/11/118502
https://iopscience.iop.org/article/10.1088/0256-307X/33/11/118502/pdf
https://iopscience.iop.org/article/10.1088/0256-307X/33/11/118502

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10

Academic Journal

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high- k metal gate NMOSFET with kMC TDDB simulations

المؤلفون: Xu, Hao, Yang, Hong, Luo, Wei-Chun, Xu, Ye-Feng, Wang, Yan-Rong, Tang, Bo, Wang, Wen-Wu, Qi, Lu-Wei, Li, Jun-Feng, Yan, Jiang, Zhu, Hui-Long, Zhao, Chao, Chen, Da-Peng, Ye, Tian-Chun

المصدر: Chinese Physics B ; volume 25, issue 8, page 087305 ; ISSN 1674-1056

الاتاحة: http://dx.doi.org/10.1088/1674-1056/25/8/087305
https://iopscience.iop.org/article/10.1088/1674-1056/25/8/087305/pdf
https://iopscience.iop.org/article/10.1088/1674-1056/25/8/087305

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11

Conference

A new method to repair ion implantation-induced damage in the gate dielectric layer of MOSFETs

المؤلفون: Liu, Yun-Fei, Yin, Hai-Zhou, Zhu, Hui-Long

المصدر: 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology ; page 1-3

الاتاحة: http://dx.doi.org/10.1109/icsict.2012.6467960
http://xplorestaging.ieee.org/ielx7/6459619/6466666/06467960.pdf?arnumber=6467960

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12

Academic Journal

Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high- k /metal gate last process

المؤلفون: Wang, Yan-Rong, Yang, Hong, Xu, Hao, Wang, Xiao-Lei, Luo, Wei-Chun, Qi, Lu-Wei, Zhang, Shu-Xiang, Wang, Wen-Wu, Yan, Jiang, Zhu, Hui-Long, Zhao, Chao, Chen, Da-Peng, Ye, Tian-Chun

المصدر: Chinese Physics B ; volume 24, issue 11, page 117306 ; ISSN 1674-1056

الاتاحة: http://dx.doi.org/10.1088/1674-1056/24/11/117306
https://iopscience.iop.org/article/10.1088/1674-1056/24/11/117306/pdf
https://iopscience.iop.org/article/10.1088/1674-1056/24/11/117306

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13

Academic Journal

Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high- k /metal gate nMOSFETs with gate-last process

المؤلفون: Qi, Lu-Wei, Yang, Hong, Ren, Shang-Qing, Xu, Ye-Feng, Luo, Wei-Chun, Xu, Hao, Wang, Yan-Rong, Tang, Bo, Wang, Wen-Wu, Yan, Jiang, Zhu, Hui-Long, Zhao, Chao, Chen, Da-Peng, Ye, Tian-Chun

المصدر: Chinese Physics B ; volume 24, issue 12, page 127305 ; ISSN 1674-1056

الاتاحة: http://dx.doi.org/10.1088/1674-1056/24/12/127305
https://iopscience.iop.org/article/10.1088/1674-1056/24/12/127305/pdf
https://iopscience.iop.org/article/10.1088/1674-1056/24/12/127305

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14

Academic Journal

Observation of the Ambient Effect in BTI Characteristics of Back-Gated Single Layer Graphene Field Effect Transistors.

المؤلفون: Liu, Wen Jun, Sun, Xiao Wei, Tran, Xuan Anh, Fang, Zheng, Wang, Zhong Rui, Wang, Fei, Wu, Ling, Zhang, J. F., Wei, Jun, Zhu, Hui Long, Yu, Hong Yu

المصدر: IEEE Transactions on Electron Devices; Aug2013, Vol. 60 Issue 8, p2682-2686, 5p

مصطلحات موضوعية: GRAPHENE, FIELD-effect transistors, TEMPERATURE, MOLECULES, VACUUM

15

MIGRATION OF VACANCIES IN BCC METALS

المؤلفون: Zhu Hui-Long, Huang Zu-Qia

المصدر: Acta Physica Sinica. 36:1122

مصطلحات موضوعية: Materials science, Condensed matter physics, Vacancy defect, General Physics and Astronomy, Current (fluid), Critical value

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f4b1a8ea73dbc8489d3d6c26c625632a
https://doi.org/10.7498/aps.36.1122

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16

Academic Journal

Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-k/metal gate nMOSFETs with gate-last process.

المؤلفون: Qi Lu-Wei, Yang Hong, Ren Shang-Qing, Xu Ye-Feng, Luo Wei-Chun, Xu Hao, Wang Yan-Rong, Tang Bo, Wang Wen-Wu, Yan Jiang, Zhu Hui-Long, Zhao Chao, Chen Da-Peng, Ye Tian-Chun

المصدر: Chinese Physics B; Dec2015, Vol. 24 Issue 12, p1-1, 1p

مصطلحات موضوعية: METAL oxide semiconductor field-effect transistors, TITANIUM nitride, ACTIVATION energy, TEMPERATURE effect, GATE array circuits, THICKNESS measurement

17

Academic Journal

Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process.

المؤلفون: Wang Yan-Rong, Yang Hong, Xu Hao, Wang Xiao-Lei, Luo Wei-Chun, Qi Lu-Wei, Zhang Shu-Xiang, Yan Jiang, Zhu Hui-Long, Zhao Chao, Chen Da-Peng, Ye Tian-Chun, Wang Wen-Wu

المصدر: Chinese Physics B; Nov 2015, Vol. 24 Issue 11, p1-1, 1p

مصطلحات موضوعية: FIELD-effect transistors, DIELECTRIC breakdown, METAL oxide semiconductors, ATOMIC layer deposition, METAL oxide semiconductor field-effect transistors

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