المؤلفون: E. Dentoni Litta, Yun-Hyuck Ji, Cheolgyu Kim, V. Machkaoutsan, Romain Ritzenthaler, D. Linten, Alessio Spessot, Barry O'Sullivan, Naoto Horiguchi, Eddy Simoen, P. Fazan

المصدر: IEEE Transactions on Device and Materials Reliability. 20:258-268

مصطلحات موضوعية: 010302 applied physics, Negative-bias temperature instability, Materials science, business.industry, Transistor, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, Threshold voltage, CMOS, law, Logic gate, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, business, Metal gate, AND gate, Leakage (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c4e512d0117db1bca8b2d8d94ad5b931
https://doi.org/10.1109/tdmr.2020.2982660

المؤلفون: D. Linten, Yun-Hyuck Ji, Cheolgyu Kim, V. Machkaoutsan, Romain Ritzenthaler, Naoto Horiguchi, Eddy Simoen, Barry O'Sullivan, E. Dentoni Litta, P. Fazan, Alessio Spessot

المصدر: 2019 IEEE International Integrated Reliability Workshop (IIRW).

مصطلحات موضوعية: 010302 applied physics, Negative-bias temperature instability, Materials science, business.industry, Transistor, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Threshold voltage, law.invention, CMOS, law, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Metal gate, AND gate, Dram, Leakage (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::cbbae02dc4d3dfe1616ff01ea2e63544
https://doi.org/10.1109/iirw47491.2019.8989891

المؤلفون: Naoto Horiguchi, Tom Schram, Romain Ritzenthaler, Yun-Hyuck Ji, E. Dentoni Litta, Barry O'Sullivan, V. Machkaoutsan, Eddy Simoen, Adrian Chasin, D. Linten, P. Fazan

المصدر: 2017 IEEE International Reliability Physics Symposium (IRPS).

مصطلحات موضوعية: 010302 applied physics, Negative-bias temperature instability, Materials science, business.industry, Transistor, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, PMOS logic, law, Logic gate, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, 0210 nano-technology, business, Metal gate, AND gate, Dram, Hardware_LOGICDESIGN, Leakage (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::afd52ee56c31e60993f311aae6377087
https://doi.org/10.1109/irps.2017.7936365

المؤلفون: M. Ercken, A. Thiam, Romain Ritzenthaler, Farid Sebaai, Geert Mannaert, Pierre C. Fazan, V. Machkaoutsan, Alessio Spessot, Barry O'Sullivan, Naoto Horiguchi, Steven Demuynck, Tom Schram, Eugenio Dentoni Litta, C. Lorant, Yun-Hyuck Ji

المصدر: Japanese Journal of Applied Physics. 57:04FB08

مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), General Physics and Astronomy, Equivalent oxide thickness, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 01 natural sciences, law.invention, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Metal gate, 010302 applied physics, Dynamic random-access memory, business.industry, Transistor, General Engineering, 021001 nanoscience & nanotechnology, Threshold voltage, CMOS, Optoelectronics, Field-effect transistor, 0210 nano-technology, business, AND gate, Hardware_LOGICDESIGN

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::023b77139bd668603964060bc0658557
https://doi.org/10.7567/jjap.57.04fb08

المؤلفون: Seung-Jin Yeom, Jeongsoo Park, Kyung-Bo Ko, Jung-Hak Lee, Hyun-Wook Nam, Tae-Hang Ahn, Y. Son, Ki-Sik Choi, Tae-Young Jang, Keundo Ban, Tae-O Jung, Sun-Woo Lee, Hyunjin Lee, Jae-Hwan Han, Noh-Jung Kwak, Il-Sik Jang, Byungil Kwak, Dong-Kyu Lee, Su-Bum Shin, Jin-Sung Kim, Hyung-Chul Kim, Seung-Beom Baek, Eun-Hyup Doh, Yun-Hyuck Ji, Seung-Mi Lee, Yu-Jun Lee, Jae-Sang Lee, Sung-Hyuk Cho, Mun-Mo Jeong, Dong-Kyun Kang, Sung-Kye Park, Min-Chul Sung, Se-Aug Jang, Heung-Jae Cho, Jae-Il Kang, Sung-Joo Hong, Jae-Seon Yu, Ji-Hye Han

المصدر: 2015 IEEE International Electron Devices Meeting (IEDM).

مصطلحات موضوعية: Materials science, business.industry, Transistor, Electrical engineering, NAND gate, Hardware_PERFORMANCEANDRELIABILITY, law.invention, Threshold voltage, law, Logic gate, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, business, Metal gate, Dram, Gate equivalent, Hardware_LOGICDESIGN, High-κ dielectric

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::2fb2c7a273825a6674cb32d752918509
https://doi.org/10.1109/iedm.2015.7409775

المؤلفون: Bong-Seok Jeon, Beom-Yong Kim, Kee-jeung Lee, Seung-Mi Lee, Yun-Hyuck Ji, Sungki Park, Kwon Hong

المصدر: 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

مصطلحات موضوعية: inorganic chemicals, Materials science, integumentary system, Silicon, Analytical chemistry, chemistry.chemical_element, Dielectric, Ion, Secondary ion mass spectrometry, Ion implantation, chemistry, Tin, Arsenic, High-κ dielectric

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::988004fe43d2a9b8e809ecb8d3e85ec1
https://doi.org/10.1109/essderc.2011.6044230