المؤلفون: Yuan HR, Lu DC, Liu XL, Chen Z, Wang XH, Wang D, Han PD, Yuan HR,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Gan, Indium Doping, Initial Growth Stage, Morphology, Optical Transmission, Photoluminescence, Vapor-phase Epitaxy, Buffer Layer, Films, Sapphire, Deposition, 半导体材料, anatomy, light--transmission, vapor phase epitaxy, photography--films, finite volume method, aluminum oxide, sedimentation, animal anatomy, animals--anatomy, anatomy and morphology, morphology and anatomy, animal, human anatomy, biological form, biological structure, form in biology, structure in biology, comparative morphology

Relation: JOURNAL OF ELECTRONIC MATERIALS; Yuan HR; Lu DC; Liu XL; Chen Z; Wang XH; Wang D; Han PD .Indium doping effect on GaN in the initial growth stage ,JOURNAL OF ELECTRONIC MATERIALS,2001 ,30(8):977-979; http://ir.semi.ac.cn/handle/172111/12120

الاتاحة: http://ir.semi.ac.cn/handle/172111/12120

المؤلفون: Xu, XQ, Liu, XL, Han, XX, Yuan, HR, Wang, J, Guo, Y, Song, HP, Zheng, GL, Wei, HY, Yang, SY, Zhu, QS, Wang, ZG, Xu, XQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlliu@red.semi.ac.cn, qszhu@semi.ac.cn

مصطلحات موضوعية: Aluminium Compounds, Dislocation Density, Electron Mobility, Gallium Compounds, Iii-v Semiconductors, Interface Roughness, Semiconductor Heterojunctions, Two-dimensional Electron Gas, Wide Band Gap Semiconductors, 半导体物理, aluminum oxide, dislocations, amorphous semiconductors, semiconductors--junctions, electron gas, wide gap semiconductors, 蓝宝石, alumina, al 2 o 3, bayer process, aluminum compounds, sapphire, alumine, aluminiumoxid, oxyde d aluminium, tonerde, saphir, sapphire (francais), aluminium oxide, aluminiumverbindungen

Relation: APPLIED PHYSICS LETTERS; Xu, XQ; Liu, XL; Han, XX; Yuan, HR; Wang, J; Guo, Y; Song, HP; Zheng, GL; Wei, HY; Yang, SY; Zhu, QS; Wang, ZG .Dislocation scattering in AlxGa1-xN/GaN heterostructures ,APPLIED PHYSICS LETTERS,2008 ,93(18): Art. No. 182111; http://ir.semi.ac.cn/handle/172111/6346

الاتاحة: http://ir.semi.ac.cn/handle/172111/6346

المؤلفون: Chen, Z, Chua, SJ, Yuan, HR, Liu, XL, Lu, DC, Han, PD, Wang, ZG, Chen, Z, Singapore MIT Alliance, AMMNS, E4-04-10,NUS,4 Engn Dr,3, Singapore 117576, Singapore. 电子邮箱地址: smacz@nus.edu.sg

مصطلحات موضوعية: Metalorganic Chemical Vapor Deposition, 半导体材料, metal organic chemical vapor deposition, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition), organo-metal vapor phase epitaxy, organometallic chemical vapor deposition, organometallic vapor phase epitaxy, metalorganic vapor phase epitaxy, organometallic vapor deposition

Relation: JOURNAL OF CRYSTAL GROWTH; Chen, Z; Chua, SJ; Yuan, HR; Liu, XL; Lu, DC; Han, PD; Wang, ZG .Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures ,JOURNAL OF CRYSTAL GROWTH,AUG 1 2004,268 (3-4):504-508; http://ir.semi.ac.cn/handle/172111/8004

الاتاحة: http://ir.semi.ac.cn/handle/172111/8004

المؤلفون: Han XX, Li DB, Yuan HR, Sun XH, Liu XL, Wang XH, Zhu QS, Wang ZG, Han, XX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xxhan@red.semi.ac.cn

مصطلحات موضوعية: Field-effect Transistors, 半导体材料, unipolar transistors, metal oxide semiconductors, field effect transistor circuits, field effect transistors, fet, hemt circuits, modfet circuits, jfet circuits, junction gate field effect transistors, jfet, mesfet circuits, mosfet circuits, power field effect transistors, power fet, static induction transistors, sit, cascode mosfet, fet (transistors), igfet, mesfets, misfets, mosfet, junction field effect transistors

Relation: PHYSICA STATUS SOLIDI B-BASIC RESEARCH; Han, XX; Li, DB; Yuan, HR; Sun, XH; Liu, XL; Wang, XH; Zhu, QS; Wang, ZG .Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure ,PHYSICA STATUS SOLIDI B-BASIC RESEARCH,NOV 2004,241 (13):3000-3008; http://ir.semi.ac.cn/handle/172111/7912

الاتاحة: http://ir.semi.ac.cn/handle/172111/7912

المؤلفون: Lu YA, Liu XL, Lu DC, Yuan HR, Hu GQ, Wang XH, Wang ZG, Duan XF, Lu DC,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Si(111) Substrate, Heteroepitaxy, Metalorganic Chemical Vapor Deposition, Gan, Light-emitting-diodes, Chemical-vapor-deposition, Nucleation Layers, Buffer Layer, Silicon, Sapphire, Nitride, Epitaxy, Stress, Strain, 半导体材料, metal organic chemical vapor deposition, light emitting diodes, chemical vapor deposition, atomic layer deposition, vapor-plating, aluminum oxide, nitrides, residual stresses, stress (mechanics), photoelasticity, thermal stresses, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition)

Relation: JOURNAL OF CRYSTAL GROWTH; Lu YA; Liu XL; Lu DC; Yuan HR; Hu GQ; Wang XH; Wang ZG; Duan XF .The growth morphologies of GaN layer on Si(111) substrate ,JOURNAL OF CRYSTAL GROWTH,2003 ,247 (1-2):91-98; http://ir.semi.ac.cn/handle/172111/11686

الاتاحة: http://ir.semi.ac.cn/handle/172111/11686

المؤلفون: Chen Z, Lu DC, Liu XL, Wang XH, Han PD, Wang D, Yuan HR, Wang ZG, Li GH, Fang ZL, Chen Z,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Mg-doped Gan, Gallium Nitride, Phase Epitaxy, Substrate, Layer, 半导体物理, 底物, 层

Relation: JOURNAL OF APPLIED PHYSICS; Chen Z; Lu DC; Liu XL; Wang XH; Han PD; Wang D; Yuan HR; Wang ZG; Li GH; Fang ZL .Luminescence study of (11(2)over-bar0) GaN film grown by metalorganic chemical-vapor deposition ,JOURNAL OF APPLIED PHYSICS,2003,93 (1):316-319; http://ir.semi.ac.cn/handle/172111/11692

الاتاحة: http://ir.semi.ac.cn/handle/172111/11692

المؤلفون: Yuan HR, Lu DC, Liu XL, Chen Z, Han P, Wang XH, Wang D, Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat & Sci,POB 912,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Atomic Force Microscopy, Crystal Morphology, Organic Vapor Phase Epitaxy, Nitrides, Chemical-vapor-deposition, Ain Buffer Layer, Gan, Sapphire, Aln, Epitaxy, Movpe, 半导体材料, biological specimen preparation, chemical vapor deposition, atomic layer deposition, vapor-plating, aluminum oxide, afm (microscopy), afm, scanning force microscopy, atomic force microscope, 晶癖, crystal structure, specimen preparation, biological techniques, biophysical instrumentation, biophysical techniques, crystal faces, crystal cleavage, faces (crystal)

Relation: JOURNAL OF CRYSTAL GROWTH; Yuan HR; Lu DC; Liu XL; Chen Z; Han P; Wang XH; Wang D .Statistical investigation on morphology development of gallium nitride in initial growth stage ,JOURNAL OF CRYSTAL GROWTH,2002,234(1):77-84; http://ir.semi.ac.cn/handle/172111/12036

الاتاحة: http://ir.semi.ac.cn/handle/172111/12036

المؤلفون: Yuan HR, Chen Z, Lu DC, Liu XL, Han PD, Wang XH, Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Computer Simulation, Crystal Morphology, Atomic Force Microscopy, Nitrides, Ain Buffer Layer, Sapphire, 半导体材料, biological specimen preparation, aluminum oxide, 计算机仿真, computer imitation, 计算机模拟, computer modeling, computer models, modeling, computer, models, simulation, computer applications, mathematical models, computer aided analysis, modelling, computerised monitoring, monitoring, computerised, computerized, computerised navigation, control system analysis computing, electric machine analysis computing, computersimulierung

Relation: JOURNAL OF CRYSTAL GROWTH; Yuan HR; Chen Z; Lu DC; Liu XL; Han PD; Wang XH .A geometrical model of GaN morphology in initial growth stage ,JOURNAL OF CRYSTAL GROWTH,2002,234(1):115-120; http://ir.semi.ac.cn/handle/172111/12042

الاتاحة: http://ir.semi.ac.cn/handle/172111/12042

المؤلفون: Chen Z, Lu DH, Yuan HR, Han P, Liu XL, Li YF, Wang XH, Lu Y, Wang ZG, Lu DH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat & Sci,POB 912,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Nanostructures, Metalorganic Chemical Vapor Deposition, Nitrides, Gan Buffer Layer, Epitaxial-growth, Phase Epitaxy, Surfaces, Temperature, Dependence, Mode, Wire, 半导体材料, nanostructured materials, metal organic chemical vapor deposition, epitaxy, dependency, nanomaterials, nanometer materials, nanophase materials, nanostructure controlled materials, nanostructure materials, ultra-fine microstructure materials, nanobelts, nanocomposites, nanoporous materials, nanorods, nanocrystalline materials, nano composites, nanocomposite materials, nanostructured composite materials

Relation: JOURNAL OF CRYSTAL GROWTH; Chen Z; Lu DH; Yuan HR; Han P; Liu XL; Li YF; Wang XH; Lu Y; Wang ZG .A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition ,JOURNAL OF CRYSTAL GROWTH,2002,235 (1-4):188-194; http://ir.semi.ac.cn/handle/172111/11990

الاتاحة: http://ir.semi.ac.cn/handle/172111/11990

المؤلفون: Lu Y, Liu XL, Lu DC, Yuan HR, Chen Z, Fan TW, Li YF, Han PD, Wang XH, Wang D, Wang ZG, Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Substrates, Heteroepitaxy, Metalorganic Chemical Vapor Deposition, Gallium Compounds, Nitrides, Intermediate Layer, Epitaxial-growth, Silicon, Sapphire, Film, 半导体材料, metal organic chemical vapor deposition, epitaxy, aluminum oxide, reactively sputtered coatings, sublayers, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition), organo-metal vapor phase epitaxy, organometallic chemical vapor deposition, organometallic vapor phase epitaxy, metalorganic vapor phase epitaxy, organometallic vapor deposition, composes du gallium, gallium-verbindungen, nitride

Relation: JOURNAL OF CRYSTAL GROWTH; Lu Y; Liu XL; Lu DC; Yuan HR; Chen Z; Fan TW; Li YF; Han PD; Wang XH; Wang D; Wang ZG .Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer ,JOURNAL OF CRYSTAL GROWTH,2002,236 (1-3):77-84; http://ir.semi.ac.cn/handle/172111/11954

الاتاحة: http://ir.semi.ac.cn/handle/172111/11954

المؤلفون: Chen Z, Lu DC, Wang XH, Liu XL, Yuan HR, Han PD, Wang D, Wang ZG, Li GH, Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Photoluminescence, Excitation Transfer Mechanism, Gan, Ingan, Mocvd, Ingan Single, Emission, Polarization, 光电子学, atomic layer deposition, electromagnetic wave polarisation, 光致发光, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd

Relation: JOURNAL OF LUMINESCENCE; Chen Z; Lu DC; Wang XH; Liu XL; Yuan HR; Han PD; Wang D; Wang ZG; Li GH .The mechanism of blueshift in excitation-intensity-dependent photo luminescence spectrum of nitride multiple quantum wells ,JOURNAL OF LUMINESCENCE,2002,99 (1):35-38; http://ir.semi.ac.cn/handle/172111/11830

الاتاحة: http://ir.semi.ac.cn/handle/172111/11830

المؤلفون: Xiang XB, Du WH, Chang XL, Yuan HR, Xiang XB,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Algaas, Gaas, Solar Cell, 半导体材料, aluminum gallium arsenides, gallium arsenide, arseniures de gallium, galliumarsenid, 太阳能电池

Relation: SOLAR ENERGY MATERIALS AND SOLAR CELLS; Xiang XB; Du WH; Chang XL; Yuan HR .The study on high efficient AlxGa1-xAs/GaAs solar cells ,SOLAR ENERGY MATERIALS AND SOLAR CELLS,2001 ,68(1):97-103; http://ir.semi.ac.cn/handle/172111/12312

الاتاحة: http://ir.semi.ac.cn/handle/172111/12312

المؤلفون: Chen Z, Lu DC, Wang XH, Liu XL, Han PD, Yuan HR, Wang D, Wang ZG, He ST, Li HL, Yan L, Chen XY, Chen Z,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Thin-films, Deposition, Diodes, 半导体物理, thin films, sedimentation, films, thin, solid film, dielectric thin films, epitaxial layers, high-k dielectric thin films, insulating thin films, low-k dielectric thin films, semimetallic thin films, superconducting epitaxial layers, superconducting superlattices, superconducting thin films, duennfilme, films minces, 沉[降堆]积, electrolytic deposition, sedimentation (deutsch), sedimentation (francais), accretion, sediment, sedimentology, fresh-water sedimentation, marine sedimentation, 沉降

Relation: CHINESE PHYSICS LETTERS; Chen Z; Lu DC; Wang XH; Liu XL; Han PD; Yuan HR; Wang D; Wang ZG; He ST; Li HL; Yan L; Chen XY .Surface acoustic wave velocity and electromechanical coupling coefficient of GaN grown on (0001) sapphire by metal-organic vapour phase epitaxy ,CHINESE PHYSICS LETTERS,2001 ,18(10):1418-1419; http://ir.semi.ac.cn/handle/172111/12064

الاتاحة: http://ir.semi.ac.cn/handle/172111/12064

المؤلفون: Lu DC, Wang CX, Yuan HR, Liu XL, Wang XH, Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat & Sci,POB 912,Beijing 100083,Peoples R China.

مصطلحات موضوعية: Gan, Annealing Treatment, In-doping, Movpe, Photoluminescence, Chemical-vapor-deposition, Phase Epitaxy, Buffer Layer, Films, Sapphire, 半导体材料, atomic layer deposition, chemical vapor deposition, vapor-plating, photography--films, finite volume method, aluminum oxide, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd

Relation: JOURNAL OF CRYSTAL GROWTH; Lu DC; Wang CX; Yuan HR; Liu XL; Wang XH .In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE ,JOURNAL OF CRYSTAL GROWTH,2000,221(0 ):356-361; http://ir.semi.ac.cn/handle/172111/12316

الاتاحة: http://ir.semi.ac.cn/handle/172111/12316

المؤلفون: Chen Z, Chua SJ, Yuan HR, Liu XL, Lu DC, Han PD, Wang ZG, Chen Z Singapore MIT Alliance AMMNS E4-04-10NUS4 Engn Dr3 Singapore 117576 Singapore. 电子邮箱地址: smacz@nus.edu.sg

مصطلحات موضوعية: Metalorganic Chemical Vapor Deposition, Semiconducting Iii-v Materials, Doped Al(x)Ga1-xn/gan Heterostructures, Carrier Confinement, Effect Transistors, Photoluminescence, Mobility, Heterojunction, Interface, Hfets, 半导体材料, metal organic chemical vapor deposition, migration, internal, metal organic vapor phase epitaxy, metallorganic vapor phase epitaxy, mocvd (vapor deposition), movpe (vapor deposition), omcvd (vapor deposition), omvpe (vapor deposition), organo-metal vapor phase epitaxy, organometallic chemical vapor deposition, organometallic vapor phase epitaxy, metalorganic vapor phase epitaxy, organometallic vapor deposition, 光致发光, 迁移率, internal migration, beweglichkeit, mobilitaet

Relation: JOURNAL OF CRYSTAL GROWTH, 268 (3-4); Chen Z; Chua SJ; Yuan HR; Liu XL; Lu DC; Han PD; Wang ZG .Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures .见：ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH, 268 (3-4),PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2004,504-508; http://ir.semi.ac.cn/handle/172111/13593

الاتاحة: http://ir.semi.ac.cn/handle/172111/13593

المؤلفون: Lu DC, Wang CX, Yuan HR, Liu XL, Wang XH, Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat & Sci POB 912 Beijing 100083 Peoples R China.

مصطلحات موضوعية: Gan, Annealing Treatment, In-doping, Movpe, Photoluminescence, Chemical-vapor-deposition, Phase Epitaxy, Buffer Layer, Films, Sapphire, 半导体材料, atomic layer deposition, chemical vapor deposition, vapor-plating, photography--films, finite volume method, aluminum oxide, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd

Relation: JOURNAL OF CRYSTAL GROWTH, 221; Lu DC; Wang CX; Yuan HR; Liu XL; Wang XH .In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE .见：ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH, 221,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2000,356-361; http://ir.semi.ac.cn/handle/172111/14961

الاتاحة: http://ir.semi.ac.cn/handle/172111/14961

المؤلفون: Liu XL, Yuan HR, Lu DC, Wang XH, Liu XL Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.

مصطلحات موضوعية: Mg-doped, Algan/gan Superlattices, Resistivity, Hole Concentration, Polarization, 半导体物理, electrical resistivity, electromagnetic wave polarisation, resistivity (electrical), electrical, electrical conductivity, electroconductivity, conductivity, electric, electric conductivity, ec, 电阻率, conductivity (electrical), specific resistance, gamma ray scattering, gamma ray spectra, plane polarization, gamma spectroscopy, gamma ray transmission, polarizing, electromagnetic wave polarization, x-ray polarisation, gamma-ray polarisation, gamma-ray polarization, gamma-ray scattering

Relation: PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1; Liu XL; Yuan HR; Lu DC; Wang XH .Modulation magnesium-doping in AlGaN/GaN superlattices .见：INST PURE APPLIED PHYSICS .PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1,DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4 CHOME, TOKYO, 105-0004, JAPAN ,2000,732-735; http://ir.semi.ac.cn/handle/172111/13743

الاتاحة: http://ir.semi.ac.cn/handle/172111/13743

المؤلفون: Yuan HR, Lu DC, Liu XL, Han PD, Wang XH, Wang D, Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.

مصطلحات موضوعية: Algan/gan Heterostructures, In-doping, 2deg, Electron Sheet Density, X-ray Diffraction, Etching, Chemical-vapor-deposition, Molecular-beam Epitaxy, Phase Epitaxy, Mobility, Growth, Films, 半导体物理, electron gas, x-ray crystallography, aggressiveness, chemical vapor deposition, atomic layer deposition, vapor-plating, migration, internal, development, photography--films, finite volume method, 电子气, fermi gas, hole gas, luttinger liquid, rpa calculations, random phase approximation

Relation: PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1; Yuan HR; Lu DC; Liu XL; Han PD; Wang XH; Wang D .Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures .见：INST PURE APPLIED PHYSICS .PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1,DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4 CHOME, TOKYO, 105-0004, JAPAN ,2000,923-926; http://ir.semi.ac.cn/handle/172111/13745

الاتاحة: http://ir.semi.ac.cn/handle/172111/13745