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1Academic Journal
المؤلفون: Felicetti, T, Di Iacovo, N, Della Fazia, MA, Piobbico, D, Pieroni, S, Pacetti, M, Yu, JL, Sun, YL, Massari, S, Barreca, ML, Sabatini, S, Tabarrini, O, Cecchetti, V, Wang, F, Pommier, Y, Morlando, M, Servillo, G, Manfroni, G
المساهمون: Felicetti, T, Di Iacovo, N, Della Fazia, Ma, Piobbico, D, Pieroni, S, Pacetti, M, Yu, Jl, Sun, Yl, Massari, S, Barreca, Ml, Sabatini, S, Tabarrini, O, Cecchetti, V, Wang, F, Pommier, Y, Morlando, M, Servillo, G, Manfroni, G
مصطلحات موضوعية: OVARIAN-CANCER6, AMINOQUINOLONES, CHEMOTHERAPY, ENOXACIN
Relation: info:eu-repo/semantics/altIdentifier/pmid/39399313; info:eu-repo/semantics/altIdentifier/wos/WOS:001329954900001; numberofpages:27; journal:RSC MEDICINAL CHEMISTRY; https://hdl.handle.net/11573/1723145
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2Academic Journal
المساهمون: Department of Applied Social Sciences
مصطلحات موضوعية: Government officials, Interpersonal communication, Disaster risk reduction, Disaster preparedness, Knowledge, Self-efficacy
Relation: http://hdl.handle.net/10397/88177; 14; 12; 13; WOS:000550189500001; 5354; OA_Scopus/WOS
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3Academic Journal
المساهمون: Institute of Textiles and Clothing
مصطلحات موضوعية: Structural color, Electrospun nanofibers, Nanoparticle assemblies, Polymer, Photonic crystal
Relation: http://hdl.handle.net/10397/80505; 14; WOS:000455068600003; 2-s2.0-85058692479; 70; OA_IR/PIRA
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4Academic Journal
المؤلفون: Yu, JL, Mansson, R, Flock, JI, Ljungh, A
المصدر: FEMS immunology and medical microbiology. 19(3):247-253
مصطلحات موضوعية: Medicin och hälsovetenskap
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5Conference
مصطلحات موضوعية: Stability, Stress effect, Threshold-voltage shift, Polymer thin-film transistors
Relation: IEEE Conference on Electron Devices and Solid-State Circuits Proceedings; http://www.scopus.com/mlt/select.url?eid=2-s2.0-63249129221&selection=ref&src=s&origin=recordpage; The 2008 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 8-10 December 2008. In Conference Proceedings, 2008, p. 1-4; 164341; eid_2-s2.0-63249129221; http://hdl.handle.net/10722/62095
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6Report
مصطلحات موضوعية: 半导体材料
Relation: CHINESE PHYSICS B; Yu, JL; Chen, YH; Lai, YF; Cheng, SY .Spin-orbit coupling effects on the in-plane optical anisotropy of semiconductor quantum wells.CHINESE PHYSICS B,2014,23(1):017806; http://ir.semi.ac.cn/handle/172111/26447
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7Report
مصطلحات موضوعية: 半导体材料
Relation: JOURNAL OF APPLIED PHYSICS; Yu, JL; Lai, YF; Wang, YZ; Cheng, SY; Chen, YH .Polarized Raman scattering of single ZnO nanorod.JOURNAL OF APPLIED PHYSICS,2014,115(3):033505; http://ir.semi.ac.cn/handle/172111/26146
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8Report
مصطلحات موضوعية: 半导体材料
Relation: CHINESE PHYSICS B; Zhang, J; Yu, JL; Cheng, SY; Lai, YF; Chen, YH. Investigation of the mode splitting induced by electro-optic birefringence in a vertical-cavity surface-emitting laser by polarized electroluminescence .CHINESE PHYSICS B,2014,23(2): 027304; http://ir.semi.ac.cn/handle/172111/26055
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9Report
مصطلحات موضوعية: 半导体材料
Relation: APPLIED PHYSICS LETTERS; Gao, HS; Liu, Y; Zhang, HY; Wu, SJ; Jiang, CY; Yu, JL; Zhu, LP; Li, Y; Huang, W; Chen, YH. Microscopic reflection difference spectroscopy for strain field of GaN induced by Berkovich nanoindentation.APPLIED PHYSICS LETTERS,2014,104(5):053106; http://ir.semi.ac.cn/handle/172111/25982
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10Report
مصطلحات موضوعية: 半导体材料
Relation: APPLIED PHYSICS LETTERS; Zhu, LP; Liu, Y; Jiang, CY; Yu, JL; Gao, HS; Ma, H; Qin, XD; Li, Y; Wu, Q; Chen, YH .Spin depolarization under low electric fields at low temperatures in undoped InGaAs/AlGaAs multiple quantum well.APPLIED PHYSICS LETTERS,2014,105(15):152103; http://ir.semi.ac.cn/handle/172111/26044
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11Report
مصطلحات موضوعية: 半导体材料
Relation: JOURNAL OF APPLIED PHYSICS; Yu, JL; Chen, YH; Jiang, CY; Ye, XL; Zhang, HY.Detecting and tuning anisotropic mode splitting induced by birefringence in an InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser.JOURNAL OF APPLIED PHYSICS,2012,111(4):43109; http://ir.semi.ac.cn/handle/172111/23709
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12Report
مصطلحات موضوعية: 半导体材料
Relation: APPLIED PHYSICS LETTERS; Yu, JL; Chen, YH; Liu, Y; Jiang, CY; Ma, H; Zhu, LP.Spectra of Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in GaAs/AlGaAs quantum wells and their behaviors under external strain.APPLIED PHYSICS LETTERS,2012,100(15):152110; http://ir.semi.ac.cn/handle/172111/23697
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13Report
المؤلفون: Jiang CY, Ma H, Yu JL, Liu Y, Chen YH, Jiang, CY (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China, cyjiang@semi.ac.cn, yhchen@semi.ac.cn
مصطلحات موضوعية: Quantum Wires, Optical-properties, Rectification, Fluctuations, 半导体材料, nanowires, optical properties, critical fluctuations, atomic wires, molecular wires, subnanoscale wires, semiconductor nanowires, semiconductor quantum wires, quantum wire lasers, nano-sized wires, nano scale wires, nano wires, nanoscale wires, optical constants, optische eigen schaften, proprietes optiques, optical props, 整流, full wave rectification, 相平衡, critical phenomena, critical opalescence, phase equilibrium, equilibrium, phase
Relation: APPLIED PHYSICS LETTERS; Jiang CY; Ma H; Yu JL; Liu Y; Chen YH.Ratchet effect induced by linearly polarized near- and mid-infrared radiation in InAs nanowires patterned quasi two-dimensional electron system,APPLIED PHYSICS LETTERS,2011,99(3):32106; http://ir.semi.ac.cn/handle/172111/22797
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14Report
مصطلحات موضوعية: Optical-properties, Dots, 半导体材料, optical properties, optical constants, optische eigen schaften, proprietes optiques, optical props
Relation: APPLIED PHYSICS LETTERS; Jiang CY; Chen YH; Ma H; Yu JL; Liu Y.Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system.APPLIED PHYSICS LETTERS,2011,98(23):Art. No. 232116; http://ir.semi.ac.cn/handle/172111/21395
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15Report
المؤلفون: Zhou GY, Chen YH, Yu JL, Zhou XL, Ye XL, Jin P, Wang ZG, Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
مصطلحات موضوعية: Spectroscopy, 半导体材料, electron paramagnetic resonance spectroscopy, alpha-particle spectra, optical spectrometers, spectrum analysis, 摄谱学, electron spin resonance spectroscopy, epr spectroscopy, esr spectroscopy, spectrography, spectrophotography, alpha spectroscopy, paramagnetic resonance spectroscopy, hot electron transistors, het, resonant hot electron tunnelling transistors, rhet, magnetic resonance spectroscopy, cimp, point contact spectroscopy, point contacts, quantum beat spectroscopy, quantum interference phenomena, quantum point contacts, resonant tunnelling, resonant tunneling, resonant tunnelling devices, resonant tunneling devices, resonant tunnelling diodes
Relation: APPLIED PHYSICS LETTERS; Zhou GY; Chen YH; Yu JL; Zhou XL; Ye XL; Jin P; Wang ZG.The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing,APPLIED PHYSICS LETTERS,2011,98(7):Article no.71914; http://ir.semi.ac.cn/handle/172111/21309
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16Report
المؤلفون: Yu JL, Chen YH, Jiang CY, Liu Y, Ma H, Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
مصطلحات موضوعية: Molecular-beam Epitaxy, Inversion Asymmetry, Heterostructures, Segregation, Interface, 半导体材料, atomic layer deposition, separation, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour
Relation: JOURNAL OF APPLIED PHYSICS; Yu JL; Chen YH; Jiang CY; Liu Y; Ma H.Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells,JOURNAL OF APPLIED PHYSICS,2011,109(5):Article no.53519; http://ir.semi.ac.cn/handle/172111/21277
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17Report
المؤلفون: Yin CM, Tang N, Zhang S, Duan JX, Xu FJ, Song J, Mei FH, Wang XQ, Shen B, Chen YH, Yu JL, Ma H, Yin, CM, Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop, Beijing 100871, Peoples R China. ntang@pku.edu.cn, bshen@pku.edu.cn
مصطلحات موضوعية: 半导体材料
Relation: APPLIED PHYSICS LETTERS; Yin CM; Tang N; Zhang S; Duan JX; Xu FJ; Song J; Mei FH; Wang XQ; Shen B; Chen YH; Yu JL; Ma H.Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures,APPLIED PHYSICS LETTERS,2011,98(12):Article no.122104; http://ir.semi.ac.cn/handle/172111/21273
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18Report
المؤلفون: Yin CM (Yin Chunming), Shen B (Shen Bo), Zhang Q (Zhang Qi), Xu FJ (Xu Fujun), Tang N (Tang Ning), Cen LB (Cen Longbin), Wang XQ (Wang Xinqiang), Chen YH (Chen Yonghai), Yu JL (Yu Jinling)
مصطلحات موضوعية: 半导体材料
Relation: APPLIED PHYSICS LETTERS; Yin CM (Yin Chunming), Shen B (Shen Bo), Zhang Q (Zhang Qi), Xu FJ (Xu Fujun), Tang N (Tang Ning), Cen LB (Cen Longbin), Wang XQ (Wang Xinqiang), Chen YH (Chen Yonghai), Yu JL (Yu Jinling).Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain.APPLIED PHYSICS LETTERS,2010,97(18):Art. No. 181904; http://ir.semi.ac.cn/handle/172111/20652
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19Report
المؤلفون: Yu JL (Yu J. L.), Chen YH (Chen Y. H.), Ye XL (Ye X. L.), Jiang CY (Jiang C. Y.), Jia CH (Jia C. H.), Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@semi.ac.cn
مصطلحات موضوعية: Molecular-beam Epitaxy, Strain Relaxation, Growth Temperature, Interface, Alloys, Gaas, Heterostructures, Microstructure, Ganxas1-x, Nitrogen, 半导体材料, atomic layer deposition, gallium arsenide, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd
Relation: JOURNAL OF APPLIED PHYSICS; Yu JL (Yu J. L.), Chen YH (Chen Y. H.), Ye XL (Ye X. L.), Jiang CY (Jiang C. Y.), Jia CH (Jia C. H.).In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy.JOURNAL OF APPLIED PHYSICS,2010,108(1):Art. No. 013516; http://ir.semi.ac.cn/handle/172111/13485
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20Academic Journal
المساهمون: Department of Electronic and Information Engineering
Relation: http://hdl.handle.net/10397/80455; 29796; 29806; 26; 23; WOS:000449972600017; OA_IR/PIRA