المؤلفون: Yoshimichi Izawa, Akio Iwabuchi, Nobuo Kaneko, Masataka Yanagihara, Shinichi Iwakami, Osamu Machida, Toshihiro Ehara, Hirokazu Goto, Ryohei Baba

المصدر: Japanese Journal of Applied Physics. 46:L721-L723

مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), business.industry, Transistor, Energy conversion efficiency, General Engineering, General Physics and Astronomy, Algan gan, Heterojunction, Power factor, Heterostructure field effect transistors, law.invention, Si substrate, law, Breakdown voltage, Optoelectronics, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::5b97f327b799f0420389a768d6be7518
https://doi.org/10.1143/jjap.46.l721