نتائج البحث - "Xu Qiang Shen"

1

Academic Journal

Mechanism of the strain modulation of GaN grown on Si substrates by a thin AlN/GaN superlattice interlayer / 薄いAlN/GaN超格子中間層によるSi基板上に成長されたGaN歪み変調のメカニズム

المؤلفون: Mitsuaki Shimizu, Tokio Takahashi, Toshihide Ide, Xu Qiang Shen, 井手利英, 沈旭強, 清水三聡, 高橋言緒

المصدر: JSAP Annual Meetings Extended Abstracts. 2014, :3310

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2

Academic Journal

High quality semipolar (10-13) AlN hetero-epitaxial growth by ammonia-free high-temperature MOVPE (AFHT-MOVPE) / アンモニアフリー高温有機金属気相成長法による高品質(10-13)半極性面AlNヘテロエピタキシャル成長

المؤلفون: Kazutoshi Kojima, Xu-Qiang Shen, 児島一聡, 沈旭強

المصدر: JSAP Annual Meetings Extended Abstracts. 2021, :2586

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3

Heteroepitaxial AlN growth on c-plane sapphire substrates by ammonia-free high temperature metalorganic chemical vapor deposition

المؤلفون: Xu-Qiang Shen, Kazutoshi Kojima

المصدر: Journal of Crystal Growth. 581:126496

مصطلحات موضوعية: Inorganic Chemistry, Materials Chemistry, Condensed Matter Physics

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::196401f6236c2e486abdf76ca0d86668
https://doi.org/10.1016/j.jcrysgro.2021.126496

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4

Academic Journal

Growth and characterization of AlN films grown on Si(110) substrates by MOCVD / Si(110)基板上にAlN薄膜のMOCVD成長と評価

المؤلفون: Mitsuaki Shimizu, Tokio Takahashi, Toshihide Ide, Xu-Qiang Shen, 井手利英, 沈旭強, 清水三聡, 高橋言緒

المصدر: JSAP Annual Meetings Extended Abstracts. 2016, :3185

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5

Ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE): a new approach to high quality AlN growth

المؤلفون: Hajime Okumura, Kazutoshi Kojima, Xu-Qiang Shen, Mitsuaki Shimizu

المصدر: CrystEngComm. 20:7364-7370

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b7eac599f61077065bd7725f7daacce1
https://doi.org/10.1039/c8ce01473f

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6

Academic Journal

STEM observations of the self-generated micro-cracks in ultra-thin AlN/GaN super-lattice grown on Si(110) substrates / 走査透過型電子顕微鏡（STEM）によるSi(110)基板上に成長した極薄AlN/GaN超格子中の自己形成したマイクロクラックの観察

المؤلفون: Mitsuaki Shimizu, Tokio Takahashi, Toshihide Ide, Xu-Qiang Shen, 井手利英, 沈旭強, 清水三聡, 高橋言緒

المصدر: JSAP Annual Meetings Extended Abstracts. 2015, :3101

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7

Academic Journal

Effect of Drain Conductance in Equivalent Circuit Model for GIT Bi-directional Switch / GIT 双方向スイッチ等価回路モデルでのドレインコンダクタンスの効果

المؤلفون: Mitsuaki Shimizu, Nobuyuki Otsuka, Tatsuo Morita, Tetsuzo Ueda, Toshihide Ide, Xu-Qiang Shen, 上田哲三, 井手利英, 大塚信之, 森田竜夫, 沈旭強, 清水三聡

المصدر: JSAP Annual Meetings Extended Abstracts. 2015, :2825

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8

Academic Journal

Fabrication of GaN Varactor Diode / GaNバラクタダイオードの製作

المؤلفون: Hiroshi Chonan, Maki Kiuchi, Masao Shimada, Mitsuaki Shimizu, Taro Itatani, Tokio Takahashi, Toshihide Ide, Xu-Qiang Shen, Yuichi Sakamura, 井手利英, 坂村祐一, 島田雅夫, 木内真希, 板谷太郎, 沈旭強, 清水三聡, 長南紘志, 高橋言緒

المصدر: JSAP Annual Meetings Extended Abstracts. 2015, :3058

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9

Academic Journal

GIT双方向スイッチ等価回路モデルの高精度化 / High Accuracy Equivalent Circuit Model for GIT Bi-directional Switch

المؤلفون: Mitsuaki Shimizu, Nobuyuki Otsuka, Tatsuo Morita, Tetsuzo Ueda, Toshihide Ide, Xu-Qiang Shen, 上田哲三, 井手利英, 大塚信之, 森田竜夫, 沈旭強, 清水三聡

المصدر: JSAP Annual Meetings Extended Abstracts. 2015, :3009

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10

High quality thin AlN epilayers grown on Si(110) substrates by metal-organic chemical vapor deposition

المؤلفون: Toshihide Ide, Mitsuaki Shimizu, Xu-Qiang Shen, Tokio Takahashi

المصدر: CrystEngComm. 19:1204-1209

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a7cea21f9b1e4e8b1e0d0d10248c0f57
https://doi.org/10.1039/c6ce02542k

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11

High accuracy equivalent circuit model for GaN GIT bi‐directional switch

المؤلفون: Xu-Qiang Shen, Nobuyuki Otsuka, Mitsuaki Shimizu, Tetsuzo Ueda, Toshihide Ide, Tatsuo Morita

المصدر: physica status solidi c. 13:378-381

مصطلحات موضوعية: Materials science, business.industry, Simple (abstract algebra), Gate resistance, Waveform, Equivalent circuit, Optoelectronics, Condensed Matter Physics, business, Capacitance, Diode

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::04588c346ae725ae00bc443605bdfc61
https://doi.org/10.1002/pssc.201510205

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12

Academic Journal

Effect of Si-Doping and GaN-Template for GaN Initial Growth(The Role of the Substrate in Determining the Properties of Epitaxial Group III Nitrides) / GaN初期成長におけるSi-ドーピング,GaNテンプレートの効果(<小特集>ナノ構造・エピ成長分科会特集「窒化物半導体エピタキシャル成長における基板の役割」の再考)

المؤلفون: Hajime Okumura, Kulandaivel Jeganathan, Mitsuaki Shimizu, Toshihide Ide, Xu-Qiang Shen, 井手利英, 奥村元, 清水三聡

المصدر: 日本結晶成長学会誌 / Journal of the Japanese Association for Crystal Growth. 2003, 30(2):82

13

Academic Journal

Structure Analysis of GaN Thin Film with Inversion Domains by High Voltage Atomic Resolution Microscopy

المؤلفون: Chihiro Iwamoto, Hajime Okumura, Hirofumi Matsuhata, Xu-Qiang Shen, Yuuichi Ikuhara

المصدر: MATERIALS TRANSACTIONS. 2002, 43(7):1542

14

Academic Journal

GaAs分子線エピタキシにおけるGa原子の面間相互表面拡散(<特集>「核形成と成長カイネティクス」) / Inter-Surface Diffusion of Ga Atoms in Molecular Beam Epitaxy of GaAs(Nucleayion and Growth Kinetics)

المؤلفون: Tatau Nishinaga, Xu-Qiang Shen, 沈旭強, 西永碩

المصدر: 日本結晶成長学会誌 / Journal of the Japanese Association for Crystal Growth. 1994, 21(1):3

15

Single-phase high-quality semipolar (10–13) AlN epilayers on m-plane (10–10) sapphire substrates

المؤلفون: Xu-Qiang Shen, Hajime Okumura, Kazutoshi Kojima

المصدر: Applied Physics Express. 13:035502

مصطلحات موضوعية: Quality (physics), Materials science, business.industry, Plane (geometry), General Engineering, Sapphire, General Physics and Astronomy, Optoelectronics, Single phase, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::721d9346a4c578cd91b60ca25b6f17eb
https://doi.org/10.35848/1882-0786/ab7486

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16

High-quality GaN film and AlGaN/GaN HEMT grown on 4-inch Si(110) substrates by MOCVD using an ultra-thin AlN/GaN superlattice interlayer

المؤلفون: Mitsuaki Shimizu, T. Takahashi, Xu-Qiang Shen, Toshihide Ide

المصدر: physica status solidi (b). 252:1075-1078

مصطلحات موضوعية: Materials science, Silicon, business.industry, Superlattice, Transistor, chemistry.chemical_element, Heterojunction, High-electron-mobility transistor, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, law.invention, Full width at half maximum, chemistry, law, Monolayer, Optoelectronics, Metalorganic vapour phase epitaxy, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f4c8a95a32e7eb562c85a828c2a26932
https://doi.org/10.1002/pssb.201451478

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17

Strain states in GaN films grown on Si(111) and Si(110) substrates using a thin AlN/GaN superlattice interlayer

المؤلفون: Xu-Qiang Shen, T. Takahashi, Toshihide Ide, Mitsuaki Shimizu

المصدر: physica status solidi c. 11:473-476

مصطلحات موضوعية: Materials science, Modulation effect, Strain (chemistry), business.industry, Superlattice, Optoelectronics, Substrate (electronics), Condensed Matter Physics, business, Lattice symmetry

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::7897aa694d7eb2976c6ad3de9f8219b5
https://doi.org/10.1002/pssc.201300503

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18

Equivalent Circuit Model for a GaN Gate Injection Transistor Bidirectional Switch

المؤلفون: Xu-Qiang Shen, Tsuyoshi Tanaka, M. Shimizu, Toshihide Ide, Tetsuzo Ueda, Tatsuo Morita

المصدر: IEEE Transactions on Electron Devices. 59:2643-2649

مصطلحات موضوعية: Materials science, business.industry, Transistor, Electrical engineering, NAND gate, Hardware_PERFORMANCEANDRELIABILITY, Capacitance, Electronic, Optical and Magnetic Materials, law.invention, Chopper, law, Logic gate, Hardware_INTEGRATEDCIRCUITS, Equivalent circuit, Electrical and Electronic Engineering, business, AND gate, Hardware_LOGICDESIGN, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4a65f7978c9ea66e5f7d38707ebde248
https://doi.org/10.1109/ted.2012.2211020

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19

Equivalent‐circuit‐model for GaN‐GIT bi‐directional switch including influence of gate resistance

المؤلفون: Tatsuo Morita, Toshihide Ide, Tetsuzo Ueda, Tsuyoshi Tanaka, Xu-Qiang Shen, Mitsuaki Shimizu

المصدر: physica status solidi c. 9:887-890

مصطلحات موضوعية: Chopper, Materials science, EKV MOSFET Model, business.industry, Gate resistance, Equivalent circuit, Optoelectronics, Waveform, Current source, Condensed Matter Physics, business, Capacitance

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f949da951a6b84201d41ffe5a46358cc
https://doi.org/10.1002/pssc.201100353

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20

Effect of hole injection in AlGaN/GaN HEMT with GIT structure by numerical simulation

المؤلفون: Hiroshi Chonan, Xu-Qiang Shen, Mitsuaki Shimizu, Toshihide Ide

المصدر: physica status solidi c. 9:847-850

مصطلحات موضوعية: Conductivity modulation, Materials science, Computer simulation, business.industry, Transconductance, Electrode, Optoelectronics, Spontaneous emission, Electron, High-electron-mobility transistor, Condensed Matter Physics, business, Layer (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::cd6ea261532483891fc1c928d50e67c7
https://doi.org/10.1002/pssc.201100330

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