نتائج البحث - "Witters, Liesbeth"

Relation: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings; http://dx.doi.org/10.1109/ICSICT.2016.7998903; 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, p. 300-303.; http://hdl.handle.net/11449/170090; 2-s2.0-85028684734

الاتاحة: http://hdl.handle.net/11449/170090
https://doi.org/10.1109/ICSICT.2016.7998903

View record in BASE

6

Conference

Impact of the low temperature operation on long channel strained Ge pFinFETs fabricated with STI first and last processes

المؤلفون: De Oliveira, Alberto Vinicius, Simoen, Eddy, Der Agopian, Paula Ghedini, Martino, João Antonio, Mitard, Jérôme, Witters, Liesbeth, Collaert, Nadine, Thean, Aaron, Claeys, Cor

المساهمون: Universidade Estadual Paulista (UNESP)

مصطلحات موضوعية: Ge pFinFET, long strained device, low temperature operation, STI first, STI last

Relation: 2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016; http://dx.doi.org/10.1109/S3S.2016.7804384; 2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016.; http://hdl.handle.net/11449/169422; 2-s2.0-85011317573

الاتاحة: http://hdl.handle.net/11449/169422
https://doi.org/10.1109/S3S.2016.7804384

View record in BASE

7

Conference

On the assessment of electrically active defects in high-mobility materials and devices

المؤلفون: Simoen, Eddy, Eneman, Geert, Oliveira, Alberto Vinicius de, Ni, Kai, Mitard, Jerome, Witters, Liesbeth, Der Agopian, Paula Ghedini, Martino, Joao Antonio, Fleetwood, Daniel M., Schrimpf, Ronald D., Reed, Robert A., Collaert, Nadine, Thean, Aaron, Claeys, Cor, Jiang, Y. L., Tang, T. A., Huang, R.

المساهمون: Universidade Estadual Paulista (UNESP)

وصف الملف: 300-303

Relation: 2016 13th Ieee International Conference On Solid-state And Integrated Circuit Technology (icsict); 2016 13th Ieee International Conference On Solid-state And Integrated Circuit Technology (icsict). New York: Ieee, p. 300-303, 2016.; http://hdl.handle.net/11449/184616; WOS:000478951000079

الاتاحة: http://hdl.handle.net/11449/184616

View record in BASE

8

Conference

Impact of the low temperature operation on long channel strained Ge pFinFETs fabricated with STI first and last processes

المؤلفون: Oliveira, Alberto Vinicius de, Simoen, Eddy, Agopian, Paula Ghedini Der, Martino, Joao Antonio, Mitard, Jerome, Witters, Liesbeth, Collaert, Nadine, Thean, Aaron, Claeys, Cor, IEEE

المساهمون: Universidade Estadual Paulista (UNESP)

مصطلحات موضوعية: Ge pFinFET, long strained device, low temperature operation, STI first, STI last

Relation: 2016 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s); 2016 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s). New York: Ieee, 3 p., 2016.; http://hdl.handle.net/11449/159327; WOS:000392693000014; 0496909595465696; orcid:0000-0002-0886-7798

الاتاحة: http://hdl.handle.net/11449/159327

View record in BASE

9

Academic Journal

Simulation of Cu pad expansion in wafer-to-wafer Cu/SiCN hybrid bonding

المؤلفون: Tsau, Yan Wen, De Messemaeker, Joke, Salahouelhadj, Abdellah, Gonzalez, Mario, Witters, Liesbeth, Zhang, Boyao, Seefeldt, Marc, Beyne, Eric, De Wolf, Ingrid

المصدر: Microelectronics Reliability ; volume 138, page 114716 ; ISSN 0026-2714

الاتاحة: http://dx.doi.org/10.1016/j.microrel.2022.114716
https://api.elsevier.com/content/article/PII:S0026271422002402?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0026271422002402?httpAccept=text/plain

View record in BASE

10

Academic Journal

GR-Noise Characterization of Ge pFinFETs with STI First and STI Last Processes

المؤلفون: Oliveira, Alberto V., Simoen, Eddy, Mitard, Jerome, Agopian, Paula G. D., Martino, Joao A., Langer, Robert, Witters, Liesbeth J., Collaert, Nadine, Thean, Aaron, Claeys, Cor

المساهمون: Universidade Estadual Paulista (UNESP)

مصطلحات موضوعية: Ge pFinFET, GR-noise characterization, STI first, STI last

وصف الملف: 1092-1095

Relation: IEEE Electron Device Letters; 1,361; http://dx.doi.org/10.1109/LED.2016.2595398; IEEE Electron Device Letters, v. 37, n. 9, p. 1092-1095, 2016.; http://hdl.handle.net/11449/168935; 2-s2.0-84984838208; 2-s2.0-84984838208.pdf; 0496909595465696; orcid:0000-0002-0886-7798

الاتاحة: http://hdl.handle.net/11449/168935
https://doi.org/10.1109/LED.2016.2595398

View record in BASE

11

Academic Journal

Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes

المؤلفون: Oliveira, Alberto V. de, Simoen, Eddy, Mitard, Jerome, Agopian, Paula G. D., Martino, Joao Antonio, Langer, Robert, Witters, Liesbeth, Collaert, Nadine, Thean, Aaron Voon-Yew, Claeys, Cor

المساهمون: Universidade Estadual Paulista (UNESP)

مصطلحات موضوعية: Ge pFinFET, low-frequency noise (LFN), shallow trench isolation (STI) first, STI last

وصف الملف: 4031-4037

Relation: Ieee Transactions On Electron Devices; 0,839; http://dx.doi.org/10.1109/TED.2016.2598288; Ieee Transactions On Electron Devices. Piscataway: Ieee-inst Electrical Electronics Engineers Inc, v. 63, n. 10, p. 4031-4037, 2016.; http://hdl.handle.net/11449/159109; WOS:000384575700032; WOS000384575700032.pdf; 0496909595465696; orcid:0000-0002-0886-7798

الاتاحة: http://hdl.handle.net/11449/159109
https://doi.org/10.1109/TED.2016.2598288

View record in BASE

12

Conference

EB metrology of Ge channel gate-all-around FET: buckling evaluation and EB damage assessment

المؤلفون: Ohashi, Takeyoshi, Hasumi, Kazuhisa, Ikota, Masami, Lorusso, Gian F., Witters, Liesbeth, Horiguchi, Naoto

المساهمون: Adan, Ofer, Robinson, John C.

المصدر: Metrology, Inspection, and Process Control for Microlithography XXXIV

الاتاحة: http://dx.doi.org/10.1117/12.2552193

View record in BASE

13

Patent

Methods for Manufacturing Dense Integrated Circuits

View record in USPTO Patent Applications

14

Patent

Methods for manufacturing dense integrated circuits

View record in USPTO Patent Applications

15

Academic Journal

Low temperature epitaxial growth of Ge:B and Ge 0.99 Sn 0.01 :B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment

المؤلفون: Vohra, Anurag, Porret, Clement, Kohen, David, Folkersma, Steven, Bogdanowicz, Janusz, Schaekers, Marc, Tolle, John, Hikavyy, Andriy, Capogreco, Elena, Witters, Liesbeth, Langer, Robert, Vandervorst, Wilfried, Loo, Roger

المصدر: Japanese Journal of Applied Physics ; volume 58, issue SB, page SBBA04 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.7567/1347-4065/ab027b
http://stacks.iop.org/1347-4065/58/i=SB/a=SBBA04/pdf
http://stacks.iop.org/1347-4065/58/i=SB/a=SBBA04?key=crossref.e0768ca6a3cdf4e447da4e6d6c3a6f30

View record in BASE

16

Conference

ESD ballasting of Ge FinFET ggNMOS devices

المؤلفون: Boschke, Roman, Chen, Shih-Hung, Scholz, Mirko, Hellings, Geert, Linten, Dimitri, Witters, Liesbeth, Collaert, Nadine, Groeseneken, Guido

المصدر: 2017 IEEE International Reliability Physics Symposium (IRPS)

الاتاحة: http://dx.doi.org/10.1109/irps.2017.7936300
http://xplorestaging.ieee.org/ielx7/7932684/7936242/07936300.pdf?arnumber=7936300

View record in BASE

17

Conference

Demonstration of sufficient BTI reliability for a 14-nm finFET 1.8 V I/O technology featuring a thick ALD SiO 2 IL and Ge p-channel

المؤلفون: Hellings, Geert, Subirats, Alexandre, Franco, Jacopo, Schram, Tom, Ragnarsson, Lars-Ake, Witters, Liesbeth, Roussel, Philippe, Linten, Dimitri, Horiguchi, Naoto, Boschke, Roman

المصدر: 2017 IEEE International Reliability Physics Symposium (IRPS)

الاتاحة: http://dx.doi.org/10.1109/irps.2017.7936375
http://xplorestaging.ieee.org/ielx7/7932684/7936242/07936375.pdf?arnumber=7936375

View record in BASE

18

Conference

Impact of the low temperature operation on long channel strained Ge pFinFETs fabricated with STI first and last processes

المؤلفون: de Oliveira, Alberto Vinicius, Simoen, Eddy, Der Agopian, Paula Ghedini, Martino, Joao Antonio, Mitard, Jerome, Witters, Liesbeth, Collaert, Nadine, Thean, Aaron, Claeys, Cor

المصدر: 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ; page 1-3

الاتاحة: http://dx.doi.org/10.1109/s3s.2016.7804384
http://xplorestaging.ieee.org/ielx7/7792516/7804370/07804384.pdf?arnumber=7804384

View record in BASE

19

Conference

Low temperature effect on strained and relaxed Ge pFinFETs STI last processes

المؤلفون: Oliveira, Alberto, Simoen, Eddy, Agopian, Paula G.D, Martino, Joao A, Mitard, Jerome, Witters, Liesbeth, Collaert, Nadine, Thean, Aaron, Claeys, Cor

Relation: High Purity and High Mobility Semiconductors 14 pages:213-218; High Purity and High Mobility Semiconductors 14 location:Pennington USA date:2016-10-02; https://lirias.kuleuven.be/handle/123456789/566035; C33886

الاتاحة: https://lirias.kuleuven.be/handle/123456789/566035

View record in BASE

20

Conference

Heterostructure at CMOS source/drain: contributor or alleviator to the high access resistance problem?

Relation: IEEE International Electron Devices Meeting - IEDM pages:604-607; IEEE International Electron Devices Meeting - IEDM location:San Francisco, CA USA date:2016-12-03; https://lirias.kuleuven.be/handle/123456789/566314; C34394

الاتاحة: https://lirias.kuleuven.be/handle/123456789/566314

View record in BASE

تنقيح النتائج