المؤلفون: Pedro Fernandes Paes Pinto Rocha, Mohammed Zeghouane, Sarah Boubenia, Franck Bassani, Laura Vauche, Eugénie Martinez, William Vandendaele, Marc Veillerot, Bassem Salem

المصدر: Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)

مصطلحات موضوعية: AlON, GaN, interfaces, Metal‐Oxide‐Semiconductor capacitor, post‐deposition anneal, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/157d1d245c404fd39733d1877f0c92da

المؤلفون: Florian Rigaud-Minet, Julien Buckley, William Vandendaele, Matthew Charles, Marie-Anne Jaud, Elise Rémont, Hervé Morel, Dominique Planson, Romain Gwoziecki, Charlotte Gillot, Véronique Sousa

المصدر: Energies, Vol 15, Iss 19, p 7062 (2022)

مصطلحات موضوعية: power electronics, wide bandgap, gallium nitride, capacitance, traps, TCAD, Technology

وصف الملف: electronic resource

Relation: https://www.mdpi.com/1996-1073/15/19/7062; https://doaj.org/toc/1996-1073

URL الوصول: https://doaj.org/article/7c7b27fb43544754a03e4889af2ed11a

المؤلفون: Thomas Lorin, William Vandendaele, Romain Gwoziecki, Yannick Baines, Jerome Biscarrat, Marie-Anne Jaud, Charlotte Gillot, Matthew Charles, Marc Plissonnier, G. Ghibaudo, F. Gaillard

المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 956-964 (2018)

مصطلحات موضوعية: Power semiconductor devices, gallium nitride, AlGaN/GaN, Schottky diodes, dynamic ron, field plates, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8371232/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/984d9e63920f464baddde8de23e7191d

المؤلفون: Yannick Baines, Julien Buckley, Jérôme Biscarrat, Gennie Garnier, Matthew Charles, William Vandendaele, Charlotte Gillot, Marc Plissonnier

المصدر: Scientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)

مصطلحات موضوعية: Medicine, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2045-2322

URL الوصول: https://doaj.org/article/b934c2829f234b79a4d94ddfc114bd65

المؤلفون: A. Krakovinsky, Louis Gerrer, R. Modica, Gerard Ghibaudo, Jérôme Biscarrat, J. Cluzel, William Vandendaele, Marie-Anne Jaud, Gaudenzio Meneghesso, F. Gaillard, Steve W. Martin, Xavier Garros, A. G. Viey, R. Gwoziecki, Marc Plissonnier, Ferdinando Iucolano, Matteo Meneghini

المصدر: IEEE Transactions on Electron Devices. 68:2017-2024

مصطلحات موضوعية: 010302 applied physics, Range (particle radiation), Bias temperature instability (BTI), capture emission time (CET) map, GaN-on-Si E-mode MOS-c high-electron-mobility transistor (HEMT), power device reliability, business.industry, Gallium nitride, High-electron-mobility transistor, Activation energy, 01 natural sciences, Temperature measurement, Electronic, Optical and Magnetic Materials, Stress (mechanics), chemistry.chemical_compound, chemistry, Gate oxide, Logic gate, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b63c9aa645b49484cd7c1c7c1bdf3dba
https://doi.org/10.1109/ted.2021.3050127

المؤلفون: Bledion Rrustemi, François Triozon, Marie-Anne Jaud, William Vandendaele, Gérard Ghibaudo

المصدر: Solid-State Electronics. 198:108470

مصطلحات موضوعية: Materials Chemistry, Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ed0ba87b5e378514e14675c966f6dc3c
https://doi.org/10.1016/j.sse.2022.108470

المؤلفون: William Vandendaele, A. G. Viey, C. Le Royer, R. Modica, Erwan Morvan, Laura Vauche, Sebastien Martinie, Marie-Anne Jaud, Steve W. Martin, R. Gwoziecki, Thierry Poiroux, Ferdinando Iucolano, Marc Plissonnier, B. Rrustemi

المصدر: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, 020208 electrical & electronic engineering, Gate length, 02 engineering and technology, Integrated circuit, 01 natural sciences, Threshold voltage, law.invention, law, Logic gate, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business, Conduction band, Communication channel

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::7ceec7602716bedc3c5cc00fc7a9db9c
https://doi.org/10.23919/ispsd50666.2021.9452257

المؤلفون: Marie-Anne Jaud, A. Krakovinsky, Steve W. Martin, A. G. Viey, Ferdinando Iucolano, R. Modica, Matteo Meneghini, Jérôme Biscarrat, Gerard Ghibaudo, R. Gwoziecki, V. Sousa, J. Coignus, William Vandendaele, F. Gaillard, J. Cluzel, Gaudenzio Meneghesso

المصدر: IRPS

مصطلحات موضوعية: 010302 applied physics, Physics, Analytical chemistry, Charge (physics), 02 engineering and technology, High-electron-mobility transistor, 021001 nanoscience & nanotechnology, Gate voltage, 01 natural sciences, BTI reliability, DC pBTI, GaN-on-Si E-mode MOSc-HEMT, Gate oxide, 0103 physical sciences, 0210 nano-technology

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c27abbf611281e545d7886f8d71e545
http://hdl.handle.net/11577/3390786

المؤلفون: A. Krakovinsky, Jérôme Biscarrat, R. Gwoziecki, Ferdinando Iucolano, Matteo Meneghini, Xavier Garros, F. Gaillard, Steve W. Martin, R. Modica, Marie-Anne Jaud, William Vandendaele, A. G. Viey, Marc Plissonnier, Gaudenzio Meneghesso, Louis Gerrer, J. Cluzel, G. Ghibaudo

المصدر: 2020 IEEE International Electron Devices Meeting (IEDM).

مصطلحات موضوعية: 010302 applied physics, Arrhenius equation, High-electron-mobility transistor, Substrate (electronics), 01 natural sciences, Molecular physics, Threshold voltage, Stress (mechanics), symbols.namesake, Gate oxide, Ionization, 0103 physical sciences, symbols, Degradation (geology)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d529c934add137dad3ec81ea2a51975b
https://doi.org/10.1109/iedm13553.2020.9371938

المؤلفون: R. Gwoziecki, William Vandendaele, A. Krakovinsky, Steve W. Martin, A. G. Viey, Marie-Anne Jaud, Marc Plissonnier, Laura Vauche, R. Modica, Ferdinando Iucolano, F. Gaillard, Jérôme Biscarrat, C. Le Royer

المصدر: 2020 IEEE International Electron Devices Meeting (IEDM).

مصطلحات موضوعية: Materials science, Equivalent series resistance, business.industry, Extraction (chemistry), Doping, Gate stack, Temperature measurement, law.invention, Capacitor, High resistivity, law, Logic gate, Optoelectronics, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::86a4a8ece9879501547eae3d0647973a
https://doi.org/10.1109/iedm13553.2020.9371965

المؤلفون: T. Lorin, R. Gwoziecki, F. Gaillard, William Vandendaele, Gerard Ghibaudo, Jérôme Biscarrat, Charlotte Gillot

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), TOURS 2015

المصدر: Microelectronics Reliability
Microelectronics Reliability, 2018, 88-90, pp.641-644. ⟨10.1016/j.microrel.2018.07.103⟩
Microelectronics Reliability, Elsevier, 2018, 88-90, pp.641-644. ⟨10.1016/j.microrel.2018.07.103⟩

مصطلحات موضوعية: Materials science, Schottky barrier, Schottky diodes, 02 engineering and technology, Dielectric, 01 natural sciences, Stress (mechanics), AC stress, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, Diode, 010302 applied physics, Power devices GaN, business.industry, 020208 electrical & electronic engineering, Schottky diode, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Anode, Threshold voltage, Optoelectronics, Relaxation (physics), business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e1e1f2ea636c5959f7576d590886c8e
https://doi.org/10.1016/j.microrel.2018.07.103

المؤلفون: Maxime Legallais, Gauthier Lefevre, Simon Martin, Sébastien Labau, Franck Bassani, Bernard Pélissier, Thierry Baron, Laura Vauche, Cyrille Le Royer, Matthew Charles, William Vandendaele, Marc Plissonnier, Romain Gwoziecki, Bassem Salem

المصدر: Advanced Materials Interfaces. 9:2101731

مصطلحات موضوعية: Mechanics of Materials, Mechanical Engineering

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::79492b0cbadff2416e50eec45decc1d4
https://doi.org/10.1002/admi.202101731

المؤلفون: Jérôme Biscarrat, François Triozon, Bledion Rrustemi, Charles Leroux, William Vandendaele, Marie-Anne Jaud, Cyrille Le Royer, Gerard Ghibaudo, Clémentine Piotrowicz

المصدر: Journal of Applied Physics. 130:105704

مصطلحات موضوعية: Range (particle radiation), Materials science, business.industry, Interface (computing), General Physics and Astronomy, Optoelectronics, Heterojunction, Charge (physics), Polarization (electrochemistry), Fermi gas, business, Capacitance, Layer (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::594382ea06c0a6da0805eae17cea2567
https://doi.org/10.1063/5.0058019

المؤلفون: Rene Escoffier, Julie Widiez, Paul-Henri Haumesser, Charlotte Gillot, Anthony Cibie, William Vandendaele, Stéphane Bécu, Jean-Philippe Colonna, Matthew Charles, Lea Di Cioccio, P. Coudrain, D. Blachier, Jérôme Biscarrat, Kremena Vladimirova

المصدر: 2019 IEEE 69th Electronic Components and Technology Conference (ECTC).

مصطلحات موضوعية: 010302 applied physics, Materials science, Silicon, business.industry, Schottky barrier, Transistor, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, 01 natural sciences, Copper, law.invention, chemistry, law, 0103 physical sciences, Optoelectronics, Power semiconductor device, Wafer, 0210 nano-technology, business, Diode

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8cf026865bc59efc98b8c9db0246597c
https://doi.org/10.1109/ectc.2019.00033

المؤلفون: Abygael Viey, William Vandendaele, Marie-Anne Jaud, Romain Gwoziecki, Alphonse Torres, Marc Plissonnier, Frédéric Gaillard, gerard ghibaudo, Roberto Modica, Ferdinando Lucolano, Matteo Meneghini, Gaudenzio Meneghesso

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics, Department of Information Engineering [Padova] (DEI), Universita degli Studi di Padova, Università degli Studi di Padova = University of Padua (Unipd)

المصدر: 2019 IEEE International Reliability Physics Symposium (IRPS)
2019 IEEE International Reliability Physics Symposium (IRPS), Mar 2019, Monterey, United States. pp.7A.1 session WB GaN
HAL

مصطلحات موضوعية: [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::6369ac77316f02570e54d75be984d4cb
https://hal.archives-ouvertes.fr/hal-02052343

المؤلفون: Janina Moereke, A. Torres, Marc Plissonnier, Matthew Charles, Erwan Morvan, Fabienne Allain, William Vandendaele

المصدر: IEEE Transactions on Semiconductor Manufacturing. 29:363-369

مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Gallium nitride, Heterojunction, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Condensed Matter Physics, Thermal conduction, Epitaxy, 01 natural sciences, Industrial and Manufacturing Engineering, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, Ion implantation, chemistry, Electric field, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Ohmic contact

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0d6973d7100e4907dc9e0d67ff158309
https://doi.org/10.1109/tsm.2016.2598179

المؤلفون: William Vandendaele, A. G. Viey, Marie-Anne Jaud, Gerard Ghibaudo, F. Gaillard, A. Torres, R. Modica, Marc Plissonnier, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, R. Gwoziecki

المصدر: IRPS

مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, 020208 electrical & electronic engineering, Mode (statistics), Gate length, 02 engineering and technology, High-electron-mobility transistor, 01 natural sciences, E-mode GaN, Threshold voltage, GaN-on-Si HEMT reliability, DC pBTI, Ultrafast pBTI, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Transient (oscillation), business, Degradation (telecommunications)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bef8b121f8e2995e5ff48a0c757fa60c
http://hdl.handle.net/11577/3305182

المؤلفون: A. G. Viey, Gerard Ghibaudo, A. Krakovinsky, Steve W. Martin, Gaudenzio Meneghesso, Ferdinando Iucolano, Matteo Meneghini, F. Gaillard, J. Cluzel, Enrico Zanoni, William Vandendaele, Marc Plissonnier, R. Modica, R. Gwoziecki, Marie-Anne Jaud, J.-P. Barnes

مصطلحات موضوعية: 010302 applied physics, education.field_of_study, Materials science, business.industry, Population, 02 engineering and technology, High-electron-mobility transistor, 021001 nanoscience & nanotechnology, 01 natural sciences, Acceptor, Threshold voltage, Stress (mechanics), Gate oxide, 0103 physical sciences, Optoelectronics, Dry etching, 0210 nano-technology, education, business, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29d4b808e3ea6e98a3567c3d8b99d99f
http://hdl.handle.net/11577/3349645

المؤلفون: Matthew Charles, Marc Plissonnier, Charlotte Gillot, Jérôme Biscarrat, William Vandendaele, J. Buckley, Gennie Garnier, Yannick Baines, R. Gwoziecki

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

المصدر: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2018, Chicago, United States. pp.200-203, ⟨10.1109/ISPSD.2018.8393637⟩

مصطلحات موضوعية: Materials science, Silicon, chemistry.chemical_element, Schottky diodes, Gallium nitride, 02 engineering and technology, 01 natural sciences, III-V semiconductor materials, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], 0103 physical sciences, Heterostructures, Diode, Leakage (electronics), 010302 applied physics, HEMTs, business.industry, Wide-bandgap semiconductor, Schottky diode, Aluminum gallium nitride, 021001 nanoscience & nanotechnology, Anode, Semiconductor, chemistry, Optoelectronics, 0210 nano-technology, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::683a3e4d71983fbde2eeebd9a4df8d36
https://cea.hal.science/cea-02187888

المؤلفون: F. Gaillard, Erwan Morvan, A. Torres, Marc Plissonnier, Marie-Anne Jaud, T. Lorin, Xavier Garros, Rene Escoffier, William Vandendaele

المساهمون: Savelli, Bruno, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

المصدر: IRPS
IRPS 2018-2018 IEEE International Reliability Physics Symposium
IRPS 2018-2018 IEEE International Reliability Physics Symposium, Mar 2018, Burlingame, United States. pp.4B.2-1-4B.2-6, ⟨10.1109/IRPS.2018.8353580⟩
2018 IEEE International Reliability Physics Symposium (IRPS)
2018 IEEE International Reliability Physics Symposium (IRPS), Mar 2018, Burlingame, United States

مصطلحات موضوعية: Materials science, [SPI] Engineering Sciences [physics], 02 engineering and technology, High-electron-mobility transistor, [SPI.MAT] Engineering Sciences [physics]/Materials, 01 natural sciences, AC pBTI, [SPI.MAT]Engineering Sciences [physics]/Materials, Stress (mechanics), [SPI]Engineering Sciences [physics], Acceleration, pBTI, 0103 physical sciences, 010302 applied physics, ultrafast pBTI, business.industry, Relaxation (NMR), Mode (statistics), 021001 nanoscience & nanotechnology, Gate voltage, E-mode GaN, GaN on Si, Optoelectronics, Degradation (geology), 0210 nano-technology, business, Ultrashort pulse

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c9a23aed4db5148f7b57bbf82f90eec
https://doi.org/10.1109/irps.2018.8353580