المؤلفون: Cvitkovich, L., Sklénard, B., Waldhör, D., Li, J., Wilhelmer, C., Veste, G., Niquet, Y.-M., Grasser, T.

المساهمون: Vienna University of Technology = Technische Universität Wien (TU Wien), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Christian Doppler Laboratory for Contextual Interfaces, University of Salzburg, Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), European Project: 871813,H2020-EU.2.1.1. - INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT) ,MUNDFAB (2020)

المصدر: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
https://hal.science/hal-04762325
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2023, Kobe, Japan. pp.341-344, ⟨10.23919/SISPAD57422.2023.10319618⟩
https://ieeexplore.ieee.org/document/10319618

مصطلحات موضوعية: [PHYS]Physics [physics]

جغرافية الموضوع: Kobe, Japan

Relation: info:eu-repo/grantAgreement//871813/EU/Modeling Unconventional Nanoscaled Device FABrication/MUNDFAB

الاتاحة: https://hal.science/hal-04762325
https://doi.org/10.23919/SISPAD57422.2023.10319618