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1Academic Journal
المؤلفون: Zhang, T, Li, G, Sun, SC, Qin, N, Kang, L, Yao, SH, Weng, HM, Mo, SK, Li, L, Liu, ZK, Yang, LX, Chen, YL
المصدر: Chinese Physics B. 29(1)
مصطلحات موضوعية: Physical Sciences, Condensed Matter Physics, topological insulator, electronic structure, surface states, Mathematical Sciences, Engineering, General Physics, Mathematical sciences, Physical sciences
وصف الملف: application/pdf
URL الوصول: https://escholarship.org/uc/item/1wn5j3x9
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2Academic Journal
المؤلفون: Xu, N, Weng, HM, Lv, BQ, Matt, CE, Park, J, Bisti, F, Strocov, VN, Gawryluk, D, Pomjakushina, E, Conder, K, Plumb, NC, Radovic, M, Autès, G, Yazyev, OV, Fang, Z, Dai, X, Qian, T, Mesot, J, Ding, H, Shi, M
المصدر: Nature communications. 7(1)
وصف الملف: application/pdf
URL الوصول: https://escholarship.org/uc/item/01w3g4p5
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3Academic Journal
المؤلفون: Princep, AJ, Feng, HL, Guo, YF, Lang, F, Weng, HM, Manuel, P, Khalyavin, D, Senyshyn, A, Rahn, MC, Yuan, YH, Matsushita, Y, Blundell, SJ, Yamaura, K, Boothroyd, AT
Relation: https://ora.ox.ac.uk/objects/uuid:6f9aedd3-a1ff-4bf9-9789-2a5028edc2fc; https://doi.org/10.1103/PhysRevB.102.104410
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4Conference
Relation: Acta Physica Polonica Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics; http://www.scopus.com/mlt/select.url?eid=2-s2.0-20344368316&selection=ref&src=s&origin=recordpage; Proceedings of the 35th Polish Seminar on Positron Annihilation (PSPA), Turawa, Poland, 20-24 September 2004. In Acta Physica Polonica Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics, 2005, v. 107 n. 5, p. 874-879; 879; 100029; eid_2-s2.0-20344368316; 874; http://hdl.handle.net/10722/80878; 107
الاتاحة: http://hdl.handle.net/10722/80878
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5Conference
Relation: Materials Research Society Symposium - Proceedings; http://www.scopus.com/mlt/select.url?eid=2-s2.0-2442593916&selection=ref&src=s&origin=recordpage; Symposium R: Radiation Effects and Ion-Beam Processing of Materials, Boston, Massachusetts, USA, 1-5 December 2003, v. 792, p. 255-260; 260; 85825; 155899730X; http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=155899730X&volume=792&spage=255&epage=260&date=2004&atitle=Vacancies+in+electron+irradiated+6H+silicon+carbide+studied+by+positron+annihilation+spectroscopy; eid_2-s2.0-2442593916; 255; http://hdl.handle.net/10722/54218; 792
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6Conference
مصطلحات موضوعية: Physics engineering chemistry
وصف الملف: 291578 bytes; 1036577 bytes; application/pdf
Relation: Materials Research Society Symposium - Proceedings; http://www.scopus.com/mlt/select.url?eid=2-s2.0-3042675789&selection=ref&src=s&origin=recordpage; Progress in compound semiconductor materials III - electronic and optoelectronic applications, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 1-4 December 2003, v. 799, p. 65-70; 70; 85832; http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=799&spage=65&epage=70&date=2004&atitle=Undoped+gallium+antimonide+studied+by+positron+annihilation+spectroscopy; eid_2-s2.0-3042675789; 65; http://hdl.handle.net/10722/47041; 799
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7Academic Journal
المؤلفون: Princep AJ, Feng HL, Guo YF, Lang F, Weng HM, Manuel P, Khalyavin D, Senyshyn A, Rahn MC, Yuan YH, Matsushita Y, Blundell SJ, Yamaura K, Boothroyd AT
Relation: urn:ISSN:2469-9969; Phys Rev B; http://purl.org/net/epubs/series/1196; Science and Technology Facilities Council (2007- ); ISIS (1984- ); ISIS - WISH; http://purl.org/net/epubs/work/47352627
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8Academic Journal
Relation: Journal of Applied Physics; http://www.scopus.com/mlt/select.url?eid=2-s2.0-25144447641&selection=ref&src=s&origin=recordpage; Journal Of Applied Physics, 2005, v. 98 n. 4; 043508:6; 109268; WOS:000231551700034; eid_2-s2.0-25144447641; 043508:1; http://hdl.handle.net/10722/146196; 98
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9Academic Journal
مصطلحات موضوعية: Physics
وصف الملف: 73703 bytes; 9781 bytes; text/plain; application/pdf
Relation: Physical Review Letters; http://www.scopus.com/mlt/select.url?eid=2-s2.0-0000224753&selection=ref&src=s&origin=recordpage; Physical Review Letters, 2000, v. 84 n. 4, p. 769-772; 772; 47811; WOS:000084891700048; http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0031-9007&volume=84&issue=4&spage=769&epage=772&date=2000&atitle=Photoinduced+dehydrogenation+of+defects+in+undoped+a-Si:H+using+positron+annihilation+spectroscopy; eid_2-s2.0-0000224753; 769; http://hdl.handle.net/10722/42194; 84
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10Report
المؤلفون: Peng CX, Weng HM, Yang XJ, Ye BJ, Cheng B, Zhou XY, Han RD, Peng, CX, Univ Sci & Technol China, Dept Modern Phys, Hefei 230026, Peoples R China. E-mail: pengcx@mail.ustc.edu.cn
مصطلحات موضوعية: P-type Zno, Thin-films, Room-temperature, Photoluminescence, Deposition, Substrate, Vacancies, Layer, Beam, Gan, 半导体物理, thin films, room temperature, sedimentation, job vacancies, films, thin, solid film, dielectric thin films, epitaxial layers, high-k dielectric thin films, insulating thin films, low-k dielectric thin films, semimetallic thin films, superconducting epitaxial layers, superconducting superlattices, superconducting thin films, duennfilme, films minces, 光致发光
Relation: CHINESE PHYSICS LETTERS; Peng CX; Weng HM; Yang XJ; Ye BJ; Cheng B; Zhou XY; Han RD .Dependence of intrinsic defects in ZnO films on oxygen fraction studied by positron annihilation ,CHINESE PHYSICS LETTERS,2006,23(2):489-492; http://ir.semi.ac.cn/handle/172111/10856
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11Academic Journal
المساهمون: Wang, Zj, Sun, Y, Chen, Xq, Franchini, Cesare, Xu, G, Weng, Hm, Dai, X, Fang, Z.
Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000304394800006; volume:85; issue:19; firstpage:195320-1; lastpage:195320-5; numberofpages:5; journal:PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS; http://hdl.handle.net/11584/74661; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-84861676249
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12Conference
المؤلفون: Chen, X, Gong, M, Ge, WK, Skorupa, W, Anwand, W, Ling, FCC, Wang, HY, Fung, SHY, Weng, HM, Wang, JN, Beling, CD, Brauer, G, Yang, CL
Relation: The National Conference of Semiconductor Physics; The 15th National Conference of Semiconductor Physics, Chengdu, China, 16-19 October 2005; 128945; http://hdl.handle.net/10722/109745
الاتاحة: http://hdl.handle.net/10722/109745
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13Conference
المؤلفون: Cheung, CK, Kwan, PY, Shan, YY, Weng, HM, Naik, PS, Beling, CD, Fung, S
مصطلحات موضوعية: Positron Beam, Focussing, Hybrid Optics, Canonical Angular Momentum
Relation: Materials Science Forum; http://www.scopus.com/mlt/select.url?eid=2-s2.0-3142746263&selection=ref&src=s&origin=recordpage; Materials Science Forum, 2004, v. 445-446, p. 465-467; 467; 85723; http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0255-5476&volume=445-446&spage=465&epage=467&date=2004&atitle=Millimeter+positron+focusing+using+a+hybrid+lens+design; eid_2-s2.0-3142746263; 465; http://hdl.handle.net/10722/80921; 445-446
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14Conference
مصطلحات موضوعية: O-Ps Lifetime, Positive Temperature Coefficient (PTC), Free Volume, HDPE(CB)
Relation: Materials Science Forum; http://www.scopus.com/mlt/select.url?eid=2-s2.0-3142707515&selection=ref&src=s&origin=recordpage; Materials Science Forum, 2004, v. 445-446, p. 358-360; 360; 85709; http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0255-5476&volume=445-446&spage=358&epage=360&date=2004&atitle=Microstructure+of+carbon+filled+HDPE/EPDM+composites+studied+by+positron+annihilation+spectroscopy; eid_2-s2.0-3142707515; 358; http://hdl.handle.net/10722/80673; 445-446
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15Conference
مصطلحات موضوعية: Silicon Carbide, E 1/E 2, Positron Lifetime Spectroscopy, DLTS
Relation: Materials Science Forum; http://www.scopus.com/mlt/select.url?eid=2-s2.0-2442471806&selection=ref&src=s&origin=recordpage; Materials Science Forum, 2004, v. 445-446, p. 135-137; 137; 85710; eid_2-s2.0-2442471806; 135; http://hdl.handle.net/10722/176172; 445-446
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16Conference
المؤلفون: Hang, DS, Weng, HM, Beling, CD, Mui, WK, Li, KF, Lui, MKP, Chen, X, Ling, FCC, Cheah, KW, Lam, CH, Fung, SHY
Relation: Proceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defects; Proceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defects, p. 146-152; 152; 80031; 146; http://hdl.handle.net/10722/109801
الاتاحة: http://hdl.handle.net/10722/109801
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17Conference
مصطلحات موضوعية: Cu/SiC, EDXS, Phase transition, VEPFIT
Relation: Applied Surface Science; http://www.scopus.com/mlt/select.url?eid=2-s2.0-0037150943&selection=ref&src=s&origin=recordpage; 9th International Workshop on Slow Positron Beam Techniques, Dresden, Germany, 16-22 September 2001. In Applied Surface Science, 2002, v. 194 n. 1-4, p. 278-282; 282; 67403; 1-4; http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0169-4332&volume=194&spage=278&epage=282&date=2002&atitle=Bi-directional+phase+transition+of+Cu/6H-SiC(0+0+0+1)+system+discovered+by+positron+beam+study; eid_2-s2.0-0037150943; 278; http://hdl.handle.net/10722/80948; 194
الاتاحة: https://doi.org/10.1016/S0169-4332(02)00134-4
http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0169-4332&volume=194&spage=278&epage=282&date=2002&atitle=Bi-directional+phase+transition+of+Cu/6H-SiC(0+0+0+1)+system+discovered+by+positron+beam+study
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18Conference
مصطلحات موضوعية: Electron Beam Cured (EBC) coating, Doppler broadening, Slow positron beam, Epoxy-acrylates resin
Relation: Materials Science Forum; http://www.scopus.com/mlt/select.url?eid=2-s2.0-0035007248&selection=ref&src=s&origin=recordpage; Materials Science Forum, 2001, v. 363-365, p. 508-510; 510; 63715; http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0255-5476&volume=363-365&spage=508&epage=510&date=2001&atitle=Investigation+of+EBC+Polymer+Coating+Using+a+Monoenergetic+Positron+Beam; eid_2-s2.0-0035007248; 508; http://hdl.handle.net/10722/80511; 363-365
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19Conference
مصطلحات موضوعية: 6H-SiC, Positron lifetime technique, Positron diffusion length
Relation: Materials Science Forum; http://www.scopus.com/mlt/select.url?eid=2-s2.0-0035016812&selection=ref&src=s&origin=recordpage; Materials Science Forum, 2001, v. 363-365, p. 120-122; 122; 56854; http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0255-5476&volume=363-365&spage=120&epage=122&date=2001&atitle=Positron+Annihilation+Spectroscopic+Studies+of+6H+Silicon+Carbide; eid_2-s2.0-0035016812; 120; http://hdl.handle.net/10722/80405; 363-365
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20Academic Journal
مصطلحات موضوعية: Semiconductor, Defect, Positron annihilation
Relation: Wuli Xuebao/Acta Physica Sinica; Wuli Xuebao/Acta Physica Sinica, 2008, v. 57 n. 9, p. 5906-5910; 5910; 155098; eid_2-s2.0-53649100443; 5906; http://hdl.handle.net/10722/59649; 57
الاتاحة: http://hdl.handle.net/10722/59649