المؤلفون: Kaczer, B., Degraeve, R., Franco, J., Grasser, T., Roussel, Ph. J., Bury, E., Weckx, P., Chasin, A., Tyaginov, S., Vandemaele, M., Grill, A., O’Sullivan, B., Fortuny, J. Diaz, Canflanca, P. Saraza, Waltl, M., Rinaudo, P., Zhao, Y., Kao, E., Asanovski, R., Catapano, E., Beckers, A., Vici, A., Truijen, B., Higashi, Y., Clima, S., Xiang, Y., Sangani, D., Panarella, L., Smets, Q., Knobloch, T., Waldhör, D., Van Troeye, B., Guo, Y., Kruv, A., Viswakarma, K., Gonzalez, M., Linten, D.

المصدر: 2024 IEEE Silicon Nanoelectronics Workshop (SNW) ; page 3-4

الاتاحة: http://dx.doi.org/10.1109/snw63608.2024.10639245
http://xplorestaging.ieee.org/ielx8/10638791/10638792/10639245.pdf?arnumber=10639245

المؤلفون: Grasser, T., Feil, M., Waschneck, K., Reisinger, H., Berens, J., Waldhoer, D., Vasilev, A., Waltl, M., Aichinger, T., Bockstedte, M., Gustin, W., Pobegen, G.

المصدر: 2024 IEEE International Reliability Physics Symposium (IRPS)

الاتاحة: http://dx.doi.org/10.1109/irps48228.2024.10529465
http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529465.pdf?arnumber=10529465

المؤلفون: Berens, J, Mistry, MV, Waldhör, D, Shluger, A, Pobegen, G, Grasser, T

المصدر: Microelectronics Reliability , 139 , Article 114789. (2022)

مصطلحات موضوعية: 4H-SiC, MOSFET, NO, NH3, N2, Post oxidation annealing sep trap assisted, tunnelling, Reliability, Gate oxide tunnelling, Breakdown

وصف الملف: application/pdf

Relation: https://discovery.ucl.ac.uk/id/eprint/10158872/1/1-s2.0-S0026271422003134-main.pdf; https://discovery.ucl.ac.uk/id/eprint/10158872/

الاتاحة: https://discovery.ucl.ac.uk/id/eprint/10158872/1/1-s2.0-S0026271422003134-main.pdf
https://discovery.ucl.ac.uk/id/eprint/10158872/

المؤلفون: Cvitkovich, L., Sklénard, B., Waldhör, D., Li, J., Wilhelmer, C., Veste, G., Niquet, Y.-M., Grasser, T.

المساهمون: Vienna University of Technology = Technische Universität Wien (TU Wien), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Christian Doppler Laboratory for Contextual Interfaces, University of Salzburg, Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), European Project: 871813,H2020-EU.2.1.1. - INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT) ,MUNDFAB (2020)

المصدر: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
https://hal.science/hal-04762325
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2023, Kobe, Japan. pp.341-344, ⟨10.23919/SISPAD57422.2023.10319618⟩
https://ieeexplore.ieee.org/document/10319618

مصطلحات موضوعية: [PHYS]Physics [physics]

جغرافية الموضوع: Kobe, Japan

Relation: info:eu-repo/grantAgreement//871813/EU/Modeling Unconventional Nanoscaled Device FABrication/MUNDFAB

الاتاحة: https://hal.science/hal-04762325
https://doi.org/10.23919/SISPAD57422.2023.10319618

المؤلفون: Knobloch, T., Waldhoer, D., Davoudi, M. R., Karl, A., Khakbaz, P., Matzinger, M., Zhang, Y., Smithe, K. K. H., Nazir, A., Liu, C., Illarionov, Y. Y., Pop, E., Peng, H., Kaczer, B., Grasser, T.

المساهمون: European Research Council

المصدر: 2023 International Electron Devices Meeting (IEDM)

الاتاحة: http://dx.doi.org/10.1109/iedm45741.2023.10413824
http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413824.pdf?arnumber=10413824

المؤلفون: Geenen F., Masin F., Stockman A., De Santi C., Lettens J., Waldhoer D., Meneghini M., Grasser T., Moens P.

المساهمون: Geenen, F., Masin, F., Stockman, A., De Santi, C., Lettens, J., Waldhoer, D., Meneghini, M., Grasser, T., Moens, P.

مصطلحات موضوعية: 4H-SiC MOSFET, BTI, modelling, NMP, Silicon carbide

Relation: info:eu-repo/semantics/altIdentifier/isbn/9781665422017; info:eu-repo/semantics/altIdentifier/wos/WOS:000852896800087; ispartofbook:Proceedings of 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD); 34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022; volume:2022-; firstpage:353; lastpage:356; numberofpages:4; serie:PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS; http://hdl.handle.net/11577/3455463; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85134272009; https://ieeexplore.ieee.org/document/9813614

الاتاحة: http://hdl.handle.net/11577/3455463
https://doi.org/10.1109/ISPSD49238.2022.9813614
https://ieeexplore.ieee.org/document/9813614

المؤلفون: Tselios, K., Knobloch, T., Waldhoer, D., Stampfer, B., Ioannidis, E., Enichlmair, H., Minixhofer, R., Grasser, T., Waltl, M.

المصدر: IEEE Transactions on Device and Materials Reliability; September 2023, Vol. 23 Issue: 3 p355-362, 8p

المؤلفون: Michl, J., Grill, A., Stampfer, B., Waldhoer, D., Schleich, C., Knobloch, T., Ioannidis, E., Enichlmair, H., Minixhofer, R., Kaczer, B., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M.

المساهمون: Austrian Research Promotion Agency FFG (Take off Programm), Christian Doppler Research Association

المصدر: 2021 IEEE International Electron Devices Meeting (IEDM)

الاتاحة: http://dx.doi.org/10.1109/iedm19574.2021.9720501
http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720501.pdf?arnumber=9720501