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1Academic Journal
المؤلفون: Snook, M, Hearne, H, McNutt, Ty, El-Hinnawy, N, Veliadis, V, Nechay, B, Woodruff, S, Howell, R S, Giorgi, David, White, Joe
المساهمون: NORTHROP GRUMMAN SYSTEMS CORP LINTHICUM MD ELECTRONIC SYSTEMS
المصدر: DTIC
مصطلحات موضوعية: Electrical and Electronic Equipment, Mfg & Industrial Eng & Control of Product Sys, Electricity and Magnetism, ELECTRIC CONNECTORS, FABRICATION, HIGH VOLTAGE, OPTIMIZATION, PERFORMANCE(ENGINEERING), PIN DIODES, SILICON CARBIDES, WAFERS, BREAKDOWN(ELECTRONIC THRESHOLD), CURRENT DENSITY, DEFECTS(MATERIALS), ELECTRIC CURRENT, HIGH POWER, LEAKAGE(ELECTRICAL), LOW COSTS, PEAK POWER, POWER CONDITIONING, SIMPLIFICATION, 4H-SILICON CARBIDE WAFERS, WAFER INTERCONNECTIONS, FULL-WAFER DIODES, WAFER-INTERCONNECTED DIODES, POWER DENSITY, DISSIPATED ENERGY, CALCULATED ACTION, PULSED TESTING, PEAK CURRENT DENSITY
وصف الملف: text/html
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2
المؤلفون: 林炯文, Chiung-Wen Lin
المساهمون: 方維倫, Weileun Fang
مصطلحات موضوعية: 微機電封裝, 穿透晶片式導線, 電鍍, MEMS packaging, through-wafer interconnections, electroplating
Time: 29
وصف الملف: 155 bytes; text/html
Relation: [1]MCNC MUMPs Process http://www.memsrus.com/CIMSmain2ie.html [2]Pister, K.S.J, “Hinged polysilicon structures with integrated CMOS TFTs,” Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE ,pp. 136 – 139,1992 [3] L.-S. Fan, Y.-C. Tai, and R. S. Muller, “IC-processed electrostatic micro-motor,” Technical Digest, IEEE Int. Electron Devices Meeting, San Francisco, CA, U.S.A. Dec. 1988, pp. 666-669. [4] SUMMiT Process, http://www.sandia.gov/mstc/index.html [5] C. G. Keller and R. T. Howe, “HexSil tweezers for teleoperated micro-assembly,” MEMS’97, Nagoya, Japan, Jan. 1997, pp. 72-77. [6] K.A. Shaw, Z.L. Chang, and N.C. MacDonald, “SCREAM I: A single mask, single-crystal silicon, reactive ion etching process for microelectromechanical Structures”, Sensors and Actuators A, vol.40, pp. 210-213, 1994. [7] J.T. Nee, R.A. Conat, K.Y. Lau, and R.S. Muller, “Lightweight, optically flat micromirrors for fast beam steering,” 2000 IEEE/LEOS Int. Conference on Optical MEMS, Kauai, HI, 21-24 Aug. 2000, pp. 9-10. [8] U. Krishnamoorthy, O. Solgaard, “Self-aligned vertical comb-drive actuators for optical scanning micromirrors,” Optical MEMS’01, Okinawa, Japan, Sep. 2001. [9] H.D. Nguyen, D. Hah, P.R. Patterson, R. Chao, W. Piyawattanametha, E.K. Lau, and M.C. Wu, “Angular vertical comb-driven tunable capacitor with high-tuning capabilities,”J.MEMS, vol.13 , , June 2004 pp. 406 – 413. [10] H. Toshiyoshi, M. Mita, and H. Fujita, “A MEMS Piggyback Actuator for Hard-Disk Drivers,” J.MEMS, vol.11 p. 648-654. [11] A. Cao, J. B. Kim, T. Tsao, and L. Lin, “A Bi-Direectional Electrothermal Electromagnetic Actuator,” MEMS’04, Maastricht, The Netherlands, Jan. 2004, pp. 450-453. [12] L. Lin, R. T. Howe, and A. P. Pisano, “Microelectromechanical filters for signal processing,” J. MEMS, vol.7, 1998, pp. 286-294. [13] Y. C. Lee, B. Amir Parviz, J.A. Chiou, and S. Chen, “Packaging for microelectromechanical and nanoelectromechanical systems,” IEEE Transactions on Advanced Packaging, vol.26, Aug. 2003, pp. 217-226. [14] T. Coreman, “Vacuum-sealed and gas-filled micromachined devices,” Ph.D. Thesis, Royal Institute of Technology, Stockholm, 1999. [15] O. Oralkan, A. S. Ergun, C. H. Cheng, J. A. Johnson, M. Karaman, T. H. Lee, and B. T. Khuri-Yakubi, “Volumetric ultrasound imaging using 2-D CMUT arrays,” IEEE transactions on ultrasonics, ferroelectrics, and frequency control, vol.50, pp. 1581-1594, 2003. [16]”Electrical through silicon wafer interconnects for high frequency photonic devices” www.standford.edu/group/SPRC/Report/poster/cheng.pdf [17] D. W. Lee, T. Ono, T. Abe, and M. Esashi, “Microprobe array with electrical interconnection for thermal imaging and data storage,” J.MEMS, vol.11, pp. 215-221, 2002. [18] C. S. Premachandran, R. Nagarjan, C. Y. Xiolin, and C. S. Choong, “A novel electrically conductive wafer through hole filled vias interconnect for 3D MEMS packaging,” Electronic components and technology conference, 53rd, May. 2003, pp. 627-630 [19] Z. Li, Y. Hao, D. Zhang, T. Li, and G. Wu, “An SOI-MEMS technology using substrate layer and bonded glass as wafer-level package,” Sensor and Actuator A, vol.96, pp. 34-42, 2002. [20] D.F. Lemmerhirt, and K. D. Wise, “Air-isolated through-wafer intereonnects for microsystem applications,” The 12th international conference on solid state sensors, actuators and microsystems, Boston, June 8-12, 2003, pp. 1067-1070. [21] T. Sasayama, S. Suzuki, S. Tsuchitani, A. Koide, M. Suzuki, T. Nakazawa, and N. Ichikawa, “Highly reliable silicon micromachined physical sensors in mass production,” Proceeding of the IEEE Transducers ’95 and Eurosensors IX, Stockholm, Sweden, June 1995, pp. 687-690. [22] T. Corman, P. Enokssou, and G. Stemme, “Gas damping of electrostatically excited resonators,” Sensor and Actuator A, vol.61, pp. 249-255, 1997. [23] G. Stemme, “Resonant silicon sensors,” J. Micromech. Microeng., vol.1, pp. 113-125, 1991. [24] X. Zhang, and W. C. Tang, “Viscous air damping in laterally driven microstructures,” MEMS’94, Jan 25-28, 1994, pp. 199-204. [25] T. Veijola, H. Kuisma, J. Lahdenpera, and T. Ryhanen, “Equivalent-circuit model of the squeezed gas in a silicon accelerometer,” Sensor and Actuator A, vol.48, pp. 239-248, 1995. [26] T. R. Anothony, “Forming electrical interconnections through semiconductors wafers,” J. Appl. Phys., Vol.52, pp. 5340-5349, 1981. [27] R. V. W. Hofland, “The theory behind pulse plating reversal current,” http://www.circuitree.com/CDA/ArticleInformation/features/BNP__Features__Item/0,2133,66303,00.html [28] M. Despont, H. Gross, F. Arrouy, C. Stebler, and U. Staufer, “Fabrication of a silicon-Pyrex-silicon stack by a.c. anodic bonding,” Sensors and Actuators A, vol.55, pp. 219-224, 1996. [29] A. Cozma, and B. Puers, “Characterization of the electrostatic bonding of silicon and Pyrex glass,” J. Micromech. Microeng., vol.5, pp. 98-102, 1995. [30] P. C. Andricacos, C. Uzoh, J. O. Dukovic, J. Horkans, and H. Deligianni, “Damascene copper electroplating for chip interconnections,” IBM journal of research and development, vol.42, pp. 567-574, 1998. [31] N. T. Nguyen, E. Boellaard, N. P. Pham, V. G. Kutchoukov, G. Craciun, and P. M. Sarro. “Through-wafer copper electroplating for three-dimensional interconnects,” J. Micromech. Microeng., vol.12, pp. 395-399, 2002. [32] Y. Cheng, B. Y. Shew, C. Y. Lin, D. H. Wei, and M. K. Chyu, “Ultra-deep LIGA process,” J. Micromech. Microeng., vol.9, pp. 58-63, 1999. [33] L. T. Romankiw, “A path: from electroplating through lithographic masks in electronics to LIGA in MEMS,” Electrochimica. Acta., Vol.42, pp. 2985-3005, 1997.; http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/30428
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3Electronic Resource
المؤلفون: NORTHROP GRUMMAN SYSTEMS CORP LINTHICUM MD ELECTRONIC SYSTEMS, Snook, M, Hearne, H, McNutt, Ty, El-Hinnawy, N, Veliadis, V, Nechay, B, Woodruff, S, Howell, R S, Giorgi, David, White, Joe
المصدر: DTIC
مصطلحات الفهرس: Electrical and Electronic Equipment, Mfg & Industrial Eng & Control of Product Sys, Electricity and Magnetism, ELECTRIC CONNECTORS, FABRICATION, HIGH VOLTAGE, OPTIMIZATION, PERFORMANCE(ENGINEERING), PIN DIODES, SILICON CARBIDES, WAFERS, BREAKDOWN(ELECTRONIC THRESHOLD), CURRENT DENSITY, DEFECTS(MATERIALS), ELECTRIC CURRENT, HIGH POWER, LEAKAGE(ELECTRICAL), LOW COSTS, PEAK POWER, POWER CONDITIONING, SIMPLIFICATION, 4H-SILICON CARBIDE WAFERS, WAFER INTERCONNECTIONS, FULL-WAFER DIODES, WAFER-INTERCONNECTED DIODES, POWER DENSITY, DISSIPATED ENERGY, CALCULATED ACTION, PULSED TESTING, PEAK CURRENT DENSITY, Text