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1Academic Journal
المؤلفون: Tarek O. Abdul Fattah, Janet Jacobs, Vladimir P. Markevich, Nikolay V. Abrosimov, Matthew P. Halsall, Iain F. Crowe, Anthony R. Peaker
المصدر: Journal of Science: Advanced Materials and Devices, Vol 8, Iss 4, Pp 100629- (2023)
مصطلحات موضوعية: Photoluminescence (PL), Silicon solar cells, Donor-acceptor pair (DAP), Ionization energy, Temperature-dependent PL, Materials of engineering and construction. Mechanics of materials, TA401-492
وصف الملف: electronic resource
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2Academic Journal
المؤلفون: Saman Jafari (10035574), Yan Zhu (112437), Fiacre Rougieux (8516856), Joyce Ann T. De Guzman (10035577), Vladimir P. Markevich (10035580), Anthony R. Peaker (10035583), Ziv Hameiri (4344415)
مصطلحات موضوعية: Biophysics, Biochemistry, Microbiology, Cell Biology, Genetics, Molecular Biology, Developmental Biology, Science Policy, Biological Sciences not elsewhere classified, Mathematical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, minority carrier lifetime measurements, photoconductance decay measurement ., trap annihilation, annealed state, light-induced degradation, photovoltaic market, doping-dependent measurements, recombination-active boron-oxygen d., Boron-Doped Czochralski Silicon Bor., photoconductance decay, minority carrier trap, Minority Carrier Traps, precursor, energy levels
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3
المؤلفون: L.I. Murin, Vladimir P. Markevich, A. A. Fadzeyeva, I. F. Medvedeva, D. N. Zhdanovich, K. A. Talkachova
المصدر: Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series. 66:227-233
مصطلحات موضوعية: 010302 applied physics, Materials science, Silicon, Dimer, Analytical chemistry, chemistry.chemical_element, Infrared spectroscopy, 02 engineering and technology, General Medicine, 021001 nanoscience & nanotechnology, 01 natural sciences, Oxygen, chemistry.chemical_compound, chemistry, Vacancy defect, 0103 physical sciences, 0210 nano-technology, Spectroscopy
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4
المؤلفون: Joyce Ann T. De Guzman, Vladimir P. Markevich, Jack Mullins, Nicholas Grant, John D. Murphy, Daniel Hiller, Matthew P. Halsall, Anthony R. Peaker
المساهمون: Brendel, Rolf, Ballif, Christophe, Dubois, Sebastien, Glunz, Stefan, Hahn, Giso, Poortmans, Jef, Verlinden, Pierre, Weeber, Arthur
المصدر: De Guzman, J A T, Markevich, V P, Mullins, J, Grant, N, Murphy, J D, Hiller, D, Halsall, M P & Peaker, A R 2022, Formation and Elimination of Electrically Active Thermally-Induced Defects in Float-Zone-Grown Silicon Crystals . in R Brendel, C Ballif, S Dubois, S Glunz, G Hahn, J Poortmans, P Verlinden & A Weeber (eds), SiliconPV 2021-11th International Conference on Crystalline Silicon Photovoltaics ., 130003, AIP Conference Proceedings, vol. 2487, American Institute of Physics, 11th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2021, Hamelin, Virtual, Germany, 19/04/21 . https://doi.org/10.1063/5.0089287
وصف الملف: application/pdf
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5
المؤلفون: L.I. Murin, Ekaterina A. Tolkacheva, Vladimir P. Markevich
المصدر: Journal of the Belarusian State University. Physics. :102-110
مصطلحات موضوعية: Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, Oxygen, Isotopic composition, 0104 chemical sciences, chemistry, Chemical physics, Molecular vibration, Vacancy defect, 0210 nano-technology
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6
المؤلفون: L.I. Murin, E. A. Tolkacheva, Vladimir P. Markevich
المصدر: Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series. 56:480-487
مصطلحات موضوعية: 010302 applied physics, Materials science, Absorption spectroscopy, General Mathematics, Analytical chemistry, General Physics and Astronomy, Infrared spectroscopy, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Full width at half maximum, Computational Theory and Mathematics, Isotopic shift, Absorption band, Molecular vibration, 0103 physical sciences, 0210 nano-technology, Absorption (electromagnetic radiation), Spectroscopy
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7
المصدر: Inorganic Materials: Applied Research. 11:1078-1082
مصطلحات موضوعية: 010302 applied physics, Materials science, Silicon, Annealing (metallurgy), General Engineering, Nucleation, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Electron, Atmospheric temperature range, 021001 nanoscience & nanotechnology, 01 natural sciences, Oxygen, chemistry, 0103 physical sciences, General Materials Science, Irradiation, 0210 nano-technology, Spectroscopy
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8
المؤلفون: Vladimir P. Markevich, Matthew P. Halsall, Lijie Sun, Iain F. Crowe, Anthony R. Peaker, Piotr Kruszewski, Jerzy Plesiewicz, Pawel Prystawko, Sylwester Bulka, Rafal Jakiela
المصدر: Markevich, V P, Halsall, M P, Sun, L, Crowe, I F, Peaker, A R, Kruszewski, P, Plesiewicz, J, Prystawko, P, Bulka, S & Jakiela, R 2022, ' Electric-Field Enhancement of Electron Emission Rates for Deep-Level Traps in n-type GaN ', Physica Status Solidi (B) Basic Research . https://doi.org/10.1002/pssb.202200545
مصطلحات موضوعية: deep levels, metal-organic vapor phase epitaxy, deep-level transient spectroscopy, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, electric field enhancement, GaN
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9
المؤلفون: Anthony R. Peaker, Hussein M. Ayedh, Robert J. Falster, Jeff Binns, Matthew P. Halsall, Vladimir P. Markevich, Nikolay V. Abrosimov, Iain F. Crowe, José Coutinho, I. D. Hawkins, Joyce Ann T. De Guzman
المساهمون: University of Manchester, Department of Electronics and Nanoengineering, University of Aveiro, Nexcel Electronic Technology, Leibniz Institute for Crystal Growth, Aalto-yliopisto, Aalto University
المصدر: De Guzman, J A T, Markevich, V P, Hawkins, I D, Ayedh, H M, Coutinho, J, Binns, J, Falster, R, Abrosimov, N V, Crowe, I F, Halsall, M P & Peaker, A R 2021, ' Indium-Doped Silicon for Solar Cells—Light-Induced Degradation and Deep-Level Traps ', Physica Status Solidi (A) Applications and Materials Science . https://doi.org/10.1002/pssa.202100108
مصطلحات موضوعية: Materials science, Silicon, Deep level, light-induced degradation, business.industry, ResearchInstitutes_Networks_Beacons/photon_science_institute, Doping, chemistry.chemical_element, Surfaces and Interfaces, Photon Science Institute, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, oxygen recombination enhanced reactions, solar cells, Materials Chemistry, Light induced, Optoelectronics, Degradation (geology), indium-doped silicon, Electrical and Electronic Engineering, business, Indium
وصف الملف: application/pdf
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10
المؤلفون: Fiacre Rougieux, Joyce Ann T. De Guzman, Ziv Hameiri, Vladimir P. Markevich, Yan Zhu, Saman Jafari, Anthony R. Peaker
المصدر: Jafari, S, Zhu, Y, Rougieux, F, De Guzman, J A T, Markevich, V P, Peaker, A R & Hameiri, Z 2021, ' On the Correlation between Light-Induced Degradation and Minority Carrier Traps in Boron-Doped Czochralski Silicon ', ACS Applied Materials and Interfaces, vol. 13, no. 5, pp. 6140–6146 . https://doi.org/10.1021/acsami.0c17549
مصطلحات موضوعية: minority carrier traps, Materials science, Silicon, ResearchInstitutes_Networks_Beacons/photon_science_institute, chemistry.chemical_element, 02 engineering and technology, Photon Science Institute, 01 natural sciences, Trap (computing), 0103 physical sciences, General Materials Science, Wafer, photoconductance decay, 010302 applied physics, Annihilation, light-induced degradation, business.industry, silicon, Carrier lifetime, 021001 nanoscience & nanotechnology, chemistry, Boron doping, Light induced, Optoelectronics, Degradation (geology), 0210 nano-technology, business, boron-oxygen degradation
وصف الملف: application/pdf
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d5419f059bf44fe1a7924dd1cb4eb83
https://www.research.manchester.ac.uk/portal/en/publications/on-the-correlation-between-lightinduced-degradation-and-minority-carrier-traps-in-borondoped-czochralski-silicon(867df400-44c2-4a47-bb78-f5d1dbcbdb81).html -
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المؤلفون: Joyce Ann T. De Guzman, José Coutinho, Vladimir P. Markevich, Anthony R. Peaker, Nikolay V. Abrosimov, Matthew P. Halsall
المصدر: De Guzman, J A T, Markevich, V P, Coutinho, J, Abrosimov, N V, Halsall, M P & Peaker, A R 2021, ' Electronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline Silicon ', Solar RRL . https://doi.org/10.1002/solr.202100459
مصطلحات موضوعية: LeTID, Materials science, DLTS, Silicon, Passivation, Hydrogen, ResearchInstitutes_Networks_Beacons/photon_science_institute, boron–hydrogen, Energy Engineering and Power Technology, chemistry.chemical_element, silicon, Photon Science Institute, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, chemistry, Chemical engineering, ab initio modeling, solar cells, Research article, Crystalline silicon, passivation, Electrical and Electronic Engineering, Boron, Electronic properties
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12
المؤلفون: Vladimir P. Markevich, John D. Murphy, Yan Zhu, Nicholas E. Grant, Anthony R. Peaker, Gianluca Coletti, Ziv Hameiri, Joyce Ann T. De Guzman, Fiacre Rougieux
المصدر: Zhu, Y, Rougieux, F, Grant, N E, De Guzman, J A T, Murphy, J D, Markevich, V P, Coletti, G, Peaker, A R & Hameiri, Z 2021, ' Electrical Characterization of Thermally Activated Defects in n-Type Float-Zone Silicon ', IEEE Journal of Photovoltaics, vol. 11, no. 1, 9244147, pp. 26-35 . https://doi.org/10.1109/JPHOTOV.2020.3031382
مصطلحات موضوعية: Materials science, Photoluminescence, Deep-level transient spectroscopy, Silicon, Passivation, Annealing (metallurgy), ResearchInstitutes_Networks_Beacons/photon_science_institute, chemistry.chemical_element, 02 engineering and technology, Photon Science Institute, 01 natural sciences, 0103 physical sciences, Wafer, Electrical and Electronic Engineering, QC, 010302 applied physics, deep level transient spectroscopy (DLTS), lifetime, business.industry, silicon, Carrier lifetime, Float-zone silicon, 021001 nanoscience & nanotechnology, Condensed Matter Physics, recombination, Electronic, Optical and Magnetic Materials, chemistry, float-zone (FZ), Optoelectronics, Defects, 0210 nano-technology, business
وصف الملف: application/pdf
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المؤلفون: Joyce Ann T. De Guzman, Saman Jafari, Yan Zhu, Vladimir P. Markevich, Ziv Hameiri, Fiacre Rougieux, Anthony R. Peaker
المصدر: 2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
مصطلحات موضوعية: Materials science, Silicon, business.industry, Annealing (metallurgy), chemistry.chemical_element, Oxygen, eye diseases, Auger, chemistry, Optoelectronics, Degradation (geology), Wafer, sense organs, business, Boron, Recombination
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المؤلفون: Joyce Ann T. De Guzman, Pietro P. Altermatt, Jeff Binns, Iain F. Crowe, Vladimir P. Markevich, Robert J. Falster, Simon Hammersley, Nikolay V. Abrosimov, I. D. Hawkins, Matthew P. Halsall, Anthony R. Peaker
المصدر: 2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
مصطلحات موضوعية: inorganic chemicals, 010302 applied physics, Materials science, Deep-level transient spectroscopy, Silicon, Doping, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Acceptor, Condensed Matter::Materials Science, chemistry, Impurity, Condensed Matter::Superconductivity, 0103 physical sciences, Atom, Gallium, 0210 nano-technology, Indium
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15
المؤلفون: L.I. Murin, Michelle Vaqueiro Contreras, Anthony R. Peaker, Paulo Sérgio Medeiros dos Santos, Vladimir P. Markevich, Iain F. Crowe, Stanislau B. Lastovskii, Matthew P. Halsall, I. D. Hawkins, José Coutinho
المصدر: Silicon Photonics XV.
مصطلحات موضوعية: inorganic chemicals, Photoluminescence, Deep-level transient spectroscopy, Materials science, Silicon, business.industry, Ab initio, Photodetector, chemistry.chemical_element, Acceptor, chemistry, Optoelectronics, Boron, business, Non-radiative recombination
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16
المؤلفون: Tarek O. Abdul Fattah, Vladimir P. Markevich, Joyce Ann T. De Guzman, José Coutinho, Stanislau B. Lastovskii, Ian D. Hawkins, Iain F. Crowe, Matthew P. Halsall, Anthony R. Peaker
المصدر: physica status solidi (a). 219:2200176
مصطلحات موضوعية: Materials Chemistry, Surfaces and Interfaces, Electrical and Electronic Engineering, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials
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17
المصدر: Doklady of the National Academy of Sciences of Belarus. 62:540-545
مصطلحات موضوعية: 010302 applied physics, Fermi level position, Materials science, Silicon, Annealing (metallurgy), chemistry.chemical_element, 02 engineering and technology, Electron, Atmospheric temperature range, 021001 nanoscience & nanotechnology, 01 natural sciences, Spectral line, chemistry, 0103 physical sciences, Irradiation, Atomic physics, 0210 nano-technology, Diode
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18
المؤلفون: Vladimir P. Markevich, E. A. Tolkacheva, L.I. Murin
المصدر: Semiconductors. 52:1097-1103
مصطلحات موضوعية: 010302 applied physics, Materials science, Absorption spectroscopy, Silicon, Physics::Instrumentation and Detectors, Annealing (metallurgy), chemistry.chemical_element, Infrared spectroscopy, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, chemistry, Vacancy defect, Molecular vibration, 0103 physical sciences, Physical chemistry, 0210 nano-technology, Absorption (electromagnetic radiation), Spectroscopy
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19
المؤلفون: Olga V. Korolik, Yu. M. Pokotilo, G. F. Stelmakh, Vladimir P. Markevich, Anis Saad, Ivan A. Svito, O. Yu. Smirnova, A. M. Petuh
المصدر: Journal of Applied Spectroscopy. 86:822-824
مصطلحات موضوعية: Materials science, Silicon, Hydrogen, Precipitation (chemistry), Scattering, Analytical chemistry, chemistry.chemical_element, Condensed Matter Physics, symbols.namesake, Scanning probe microscopy, chemistry, symbols, Charge carrier, Raman spectroscopy, Spectroscopy, Raman scattering
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20
المؤلفون: Joyce Ann T. de Guzman, Vladimir P. Markevich, Ian D. Hawkins, José Coutinho, Hussein M. Ayedh, Jeff Binns, Nikolay V. Abrosimov, Stanislau B. Lastovskii, Iain F. Crowe, Matthew P. Halsall, Anthony R. Peaker
المصدر: De Guzman, J A T, Markevich, V P, Hawkins, I D, Coutinho, J, Ayedh, H M, Binns, J, Abrosimov, N V, Lastovskii, S B, Crowe, I F, Halsall, M P & Peaker, A R 2021, ' Acceptor-oxygen defects in silicon : The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer ', Journal of Applied Physics, vol. 130, no. 24, 245703 . https://doi.org/10.1063/5.0076980
مصطلحات موضوعية: inorganic chemicals, ResearchInstitutes_Networks_Beacons/photon_science_institute, General Physics and Astronomy, Photon Science Institute
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