المؤلفون: Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G., Visciarelli, M.

المساهمون: Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G., Visciarelli, M.

مصطلحات موضوعية: Hardware and Architecture, Electronic, Optical and Magnetic Material, Electrical and Electronic Engineering

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/isbn/9781538648117; info:eu-repo/semantics/altIdentifier/wos/WOS:000576960300008; ispartofbook:2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018; 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018; volume:2018-; firstpage:1; lastpage:4; numberofpages:4; http://hdl.handle.net/11585/669589; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85050906641; http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=8347190

الاتاحة: http://hdl.handle.net/11585/669589
https://doi.org/10.1109/ULIS.2018.8354726
http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=8347190

المؤلفون: Gnani E., Visciarelli M., Gnudi A., Reggiani S., Baccarani G.

المساهمون: Gnani E., Visciarelli M., Gnudi A., Reggiani S., Baccarani G.

مصطلحات موضوعية: III-V material, Interface trap, Quantum transport, Strain, TFET inverter, Tunnel field-effect transistors (TFET)

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000471258000006; volume:159; firstpage:38; lastpage:42; numberofpages:5; journal:SOLID-STATE ELECTRONICS; http://hdl.handle.net/11585/728246; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85063497716; http://www.elsevier.com/wps/find/journaldescription.cws_home/103/description#description

الاتاحة: http://hdl.handle.net/11585/728246
https://doi.org/10.1016/j.sse.2019.03.051
http://www.elsevier.com/wps/find/journaldescription.cws_home/103/description#description

المؤلفون: Selmi L, Caruso E, Carapezzi S, Visciarelli M, Gnani E, Zagni N, Pavan P, Palestri P, Esseni D, Gnudi A, Reggiani S, Puglisi F. M, Verzellesi G.

المساهمون: L.Selmi, E.Caruso, S.Carapezzi, M.Visciarelli, E.Gnani, N.Zagni, P.Pavan, P.Palestri, D.Esseni, A.Gnudi, S.Reggiani, F.M.Puglisi, G.Verzellesi, Selmi, L, Caruso, E, Carapezzi, S, Visciarelli, M, Gnani, E, Zagni, N, Pavan, P, Palestri, P, Esseni, D, Gnudi, A, Reggiani, S, Puglisi, F. M., Verzellesi, G.

Relation: info:eu-repo/semantics/altIdentifier/isbn/978-1-5386-3559-9; info:eu-repo/semantics/altIdentifier/wos/WOS:000424868900078; ispartofbook:IEEE International Electron Device Meeting Technical Digest; International Electron Device Meeting; firstpage:322; lastpage:325; numberofpages:4; info:eu-repo/grantAgreement/EC/FP7/619326; http://hdl.handle.net/11390/1122269; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85045186482

الاتاحة: http://hdl.handle.net/11390/1122269

المؤلفون: Selmi, L., Caruso, E., Carapezzi, S., Visciarelli, M., Gnani, E., Zagni, N., Pavan, P., Palestri, P., Esseni, D., Gnudi, A., Reggiani, S., Puglisi, F. M., Verzellesi, G.

المساهمون: Selmi, L., Caruso, E., Carapezzi, S., Visciarelli, M., Gnani, E., Zagni, N., Pavan, P., Palestri, P., Esseni, D., Gnudi, A., Reggiani, S., Puglisi, F. M., Verzellesi, G.

Relation: info:eu-repo/semantics/altIdentifier/isbn/9781538635599; info:eu-repo/semantics/altIdentifier/wos/WOS:000424868900078; ispartofbook:Technical Digest - International Electron Devices Meeting, IEDM; 63rd IEEE International Electron Devices Meeting, IEDM 2017; volume:134366; firstpage:322; lastpage:325; numberofpages:4; info:eu-repo/grantAgreement/EC/FP7/619326; http://hdl.handle.net/11380/1160613; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85045186482

الاتاحة: http://hdl.handle.net/11380/1160613
https://doi.org/10.1109/IEDM.2017.8268384

المؤلفون: CARUSO, Enrico, ESSENI, David, PALESTRI, Pierpaolo, SELMI, Luca, Zerveas, G., Baccarani, G., Czornomaz, L., Daix, N., Gnani, E., Gnudi, A., Grassi, R., Luisier, M., Markussen, T., Schenk, A., Sousa, M., Stokbro, K., Visciarelli, M.

المساهمون: Caruso, Enrico, Zerveas, G., Baccarani, G., Czornomaz, L., Daix, N., Esseni, David, Gnani, E., Gnudi, A., Grassi, R., Luisier, M., Markussen, T., Palestri, Pierpaolo, Schenk, A., Selmi, Luca, Sousa, M., Stokbro, K., Visciarelli, M.

مصطلحات موضوعية: III-V compounds, band-structure, DFT

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/isbn/978-1-4799-6910-4; info:eu-repo/semantics/altIdentifier/wos/WOS:000380427400026; ispartofbook:Proceedings of 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon; 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon; firstpage:101; lastpage:104; numberofpages:4; http://hdl.handle.net/11390/1082996; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-84926435538

الاتاحة: http://hdl.handle.net/11390/1082996
https://doi.org/10.1109/ULIS.2015.7063783

المؤلفون: Visciarelli, M., Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.

المساهمون: Visciarelli, Michele, Gnani, Elena, Gnudi, Antonio, Reggiani, Susanna, Baccarani, Giorgio

مصطلحات موضوعية: III-V material, interface trap, quantum transport, strain, Tunnel Field-Effect Transistors (TFET), Electronic, Optical and Magnetic Material, Instrumentation, Electrical and Electronic Engineering

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/isbn/9781509053131; info:eu-repo/semantics/altIdentifier/wos/WOS:000425210900004; ispartofbook:Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings; 2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017; firstpage:13; lastpage:16; numberofpages:4; info:eu-repo/grantAgreement/EC/FP7/619509; http://hdl.handle.net/11585/610868; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85026741188

الاتاحة: http://hdl.handle.net/11585/610868
https://doi.org/10.1109/ULIS.2017.7962580

المؤلفون: Visciarelli, M., Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.

المصدر: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ; page 16-19

الاتاحة: http://dx.doi.org/10.1109/ulis.2016.7440041
http://xplorestaging.ieee.org/ielx7/7435614/7440031/7440041.pdf?arnumber=7440041

المؤلفون: Gnani, E., Visciarelli, M., Gnudi, A., Reggiani, S., Baccarani, G.

المصدر: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ; page 275-278

الاتاحة: http://dx.doi.org/10.1109/icsict.2016.7998897
http://xplorestaging.ieee.org/ielx7/7987614/7998614/07998897.pdf?arnumber=7998897

المؤلفون: Barone V., Ferretti A., Visciarelli M., CACELLI, IVO

المساهمون: Barone, V., Cacelli, Ivo, Ferretti, A., Visciarelli, M.

وصف الملف: STAMPA

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000335878000029; volume:118; firstpage:4976; lastpage:4981; numberofpages:6; journal:JOURNAL OF PHYSICAL CHEMISTRY. B, CONDENSED MATTER, MATERIALS, SURFACES, INTERFACES & BIOPHYSICAL; http://hdl.handle.net/11568/527868; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-84900323709

الاتاحة: http://hdl.handle.net/11568/527868
https://doi.org/10.1021/jp502065c

المؤلفون: Barone V, Ferretti A, Visciarelli M., CACELLI, IVO

المساهمون: Barone, V, Cacelli, Ivo, Ferretti, A, Visciarelli, M.

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000309608900001; volume:549; firstpage:1; lastpage:5; numberofpages:5; journal:CHEMICAL PHYSICS LETTERS; http://hdl.handle.net/11568/154898; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-84866670771

الاتاحة: http://hdl.handle.net/11568/154898
https://doi.org/10.1016/j.cplett.2012.08.077

المؤلفون: Caruso, E., Zerveas, G, Baccarani, G., Czornomaz, L., Daix, N., Esseni, D., Gnani, E., Gnudi, A., Grassi, R., Luisier, M., Markussen, T., Palestri, P., Schenk, A., Selmi, L., Sousa, M., Stokbro, K., Visciarelli, M.

المصدر: EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop & International Conference on Ultimate Integration on Silicon; 2015, p101-104, 4p

المؤلفون: Antonio Gnudi, Giorgio Baccarani, Susanna Reggiani, Michele Visciarelli, Elena Gnani

المساهمون: Gnani E., Visciarelli M., Gnudi A., Reggiani S., Baccarani G.

مصطلحات موضوعية: Materials science, III-V material, 02 engineering and technology, 01 natural sciences, law.invention, Strain, law, 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, 010302 applied physics, Interface trap, Strain (chemistry), business.industry, Transistor, Heterojunction, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Subthreshold slope, Electronic, Optical and Magnetic Materials, Noise margin, Quantum transport, Optoelectronics, Inverter, Transient (oscillation), 0210 nano-technology, business, Tunnel field-effect transistors (TFET), TFET inverter, Voltage

وصف الملف: ELETTRONICO

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1291fa656baa0bf9af714ef99483e54
http://hdl.handle.net/11585/728246

المؤلفون: Luca Selmi, David Esseni, Francesco Maria Puglisi, Nicolo Zagni, Stefania Carapezzi, Susanna Reggiani, Antonio Gnudi, Giovanni Verzellesi, Pierpaolo Palestri, Michele Visciarelli, Paolo Pavan, Enrico Caruso, Elena Gnani

المساهمون: Selmi, L., Caruso, E., Carapezzi, S., Visciarelli, M., Gnani, E., Zagni, N., Pavan, P., Palestri, P., Esseni, D., Gnudi, A., Reggiani, S., Puglisi, F.M., Verzellesi, G.

مصطلحات موضوعية: 010302 applied physics, Materials science, Other Engineering and Technologies not elsewhere specified, Semiclassical physics, Electrostatics, 01 natural sciences, Engineering physics, Effective mass (solid-state physics), Logic gate, 0103 physical sciences, MOSFET, III-V MOSFET, semiconductor device simulation, TCAD, band structure calculation, In0.53Ga0.47As, quasi ballistic and ballistic conduction, mobility, NEGF, k dot p, NP-EMA, effective mass, nonparabolicity coefficient, Compound semiconductor, Övrig annan teknik, 010306 general physics, Nanoscopic scale, Communication channel

وصف الملف: ELETTRONICO

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e332ebc241dddd688b648bcab1530d0
http://hdl.handle.net/11585/669632