المؤلفون: Palazzo S., Sanseverino A., Canale Parola G., Martano E., Velardi F., Busatto G.

المساهمون: Palazzo, S., Sanseverino, A., Canale Parola, G., Martano, E., Velardi, F., Busatto, G.

مصطلحات موضوعية: GaN HEMT, junction temperature, short circuit, thermal model

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:001246550600001; volume:13; issue:11; journal:ELECTRONICS; https://hdl.handle.net/11580/107325; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85195848325

الاتاحة: https://hdl.handle.net/11580/107325
https://doi.org/10.3390/electronics13112189

المؤلفون: Fiore, S., Abbate, C., Baccaro, S., Busatto, G., Citterio, M., Iannuzzo, F., Lanza, A., Latorre, S., Lazzaroni, M., Sanseverino, A., Velardi, F.

مصطلحات موضوعية: Physics - Instrumentation and Detectors, High Energy Physics - Experiment

URL الوصول: http://arxiv.org/abs/1310.1902

المؤلفون: Abbate C., Colella L., Di Folco R., Busatto G., Martano E., Palazzo S., Sanseverino A., Velardi F.

المساهمون: Abbate Carmine, Colella Leandro, Di Folco Roberto, Busatto Giovanni, Martano Emanuele, Palazzo Simone Velardi Francesco, Abbate, C., Colella, L., Di Folco, R., Busatto, G., Martano, E., Palazzo, S., Sanseverino, A., Velardi, F.

وصف الملف: ELETTRONICO

Relation: volume:11; issue:19; firstpage:9138; journal:APPLIED SCIENCES; http://hdl.handle.net/11580/91853; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85116368394

الاتاحة: http://hdl.handle.net/11580/91853
https://doi.org/10.3390/app11199138

المؤلفون: Galli, G., Di Rocco, C., Velardi, F.

المصدر: Craniosynostosis ; page 51-74 ; ISBN 9780429278938

الاتاحة: http://dx.doi.org/10.1201/9780429278938-2

المؤلفون: Di Rocco, C., Velardi, F.

المصدر: Craniosynostosis ; page 181-247 ; ISBN 9780429278938

الاتاحة: http://dx.doi.org/10.1201/9780429278938-6

المؤلفون: Di Rocco, C., Velardi, F.

المصدر: Craniosynostosis ; page 75-107 ; ISBN 9780429278938

الاتاحة: http://dx.doi.org/10.1201/9780429278938-3

المؤلفون: Marciano D., Palazzo S., Abbate C., Busatto G., Sanseverino A., Tedesco D., Velardi F.

المساهمون: D. Marciano, S. Palazzo, C. Abbate, G. Busatto, A. Sanseverino, D. Tedesco, F. Velardi, Marciano, D., Palazzo, S., Abbate, C., Busatto, G., Sanseverino, A., Tedesco, D., Velardi, F.

مصطلحات موضوعية: Modulation technique, Pulsating DC link, SiC device, ZVT

Relation: info:eu-repo/semantics/altIdentifier/isbn/978-1-7281-5135-9; ispartofbook:2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings; 13th IEEE Energy Conversion Congress and Exposition, ECCE 2021; firstpage:3289; lastpage:3294; numberofpages:6; https://hdl.handle.net/11580/96845; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85123354727

الاتاحة: https://hdl.handle.net/11580/96845
https://doi.org/10.1109/ECCE47101.2021.9595973

المؤلفون: Marciano D., Palazzo S., Busatto G., Sanseverino A., Velardi F.

المساهمون: D. Marciano, S. Palazzo, G. Busatto, A. Sanseverino, F. Velardi, Marciano, D., Palazzo, S., Busatto, G., Sanseverino, A., Velardi, F.

مصطلحات موضوعية: Active clamp, Isolated DC/AC converter, Pulsating DC link, SiC device

Relation: info:eu-repo/semantics/altIdentifier/isbn/978-1-7281-5135-9; ispartofbook:2021 IEEE Energy Conversion Congress and Exposition, ECCE 2021 - Proceedings; 13th IEEE Energy Conversion Congress and Exposition, ECCE 2021; firstpage:2704; lastpage:2709; numberofpages:6; https://hdl.handle.net/11580/96844; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85123385978

الاتاحة: https://hdl.handle.net/11580/96844
https://doi.org/10.1109/ECCE47101.2021.9595012

المؤلفون: Abbate, C., Busatto, G., Iannuzzo, F., Sanseverino, A., Velardi, F., COVA, Paolo, DELMONTE, Nicola, GIULIANI, Francesco

المساهمون: Abbate, C., Busatto, G., Cova, Paolo, Delmonte, Nicola, Giuliani, Francesco, Iannuzzo, F., Sanseverino, A., Velardi, F.

مصطلحات موضوعية: Radiation effects, Schottky diodes, silicon carbide

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000349672900003; volume:62; issue:1; firstpage:202; lastpage:209; numberofpages:8; journal:IEEE TRANSACTIONS ON NUCLEAR SCIENCE; http://hdl.handle.net/11381/2787271; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-84923282198; http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7035170

الاتاحة: http://hdl.handle.net/11381/2787271
https://doi.org/10.1109/TNS.2014.2387014
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7035170

المؤلفون: Abbate, C., Alderighi, M., Baccaro, S., Busatto, G., Citterio, M., Cova, P., Delmonte, N., Luca, V., Fiore, S., Gerardin, S., Ghisolfi, E., Giuliani, F., Francesco Iannuzzo, Lanza, A., Latorre, S., Lazzaroni, M., Meneghesso, G., Paccagnella, A., Rampazzo, F., Riva, M., Sanseverino, A., Silvestri, R., Spiazzi, G., Velardi, F., Zanoni, E.

Relation: url:https://www.openaccessrepository.it/communities/infn; url:https://www.openaccessrepository.it/communities/itmirror; https://www.openaccessrepository.it/record/55820

الاتاحة: https://www.openaccessrepository.it/record/55820
https://doi.org/10.22323/1.189.0007

المؤلفون: Conte, R., Longo, M., Marano, S., Matta, V., Velardi, F.

المصدر: 2007 15th International Conference on Digital Signal Processing ; page 159-162

الاتاحة: https://doi.org/10.1109/icdsp.2007.4288543
http://xplorestaging.ieee.org/ielx5/4288490/4288491/04288543.pdf?arnumber=4288543

المؤلفون: Busatto, G., Di Pasquale, A., Marciano, D., Palazzo, S., Sanseverino, A., Velardi, F.

المساهمون: Busatto, G., Di Pasquale, A., Marciano, D., Palazzo, S., Sanseverino, A., Velardi, F.

Relation: firstpage:113903; journal:MICROELECTRONICS RELIABILITY; https://hdl.handle.net/11580/78586; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85095435321

الاتاحة: https://hdl.handle.net/11580/78586
https://doi.org/10.1016/j.microrel.2020.113903

المؤلفون: Patti, Davide, Busatto, G., Golluccio, G., Marciano, D., Sanseverino, A., Velardi, F.

المصدر: 2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe) ; volume 34, page P.1-P.7

الاتاحة: http://dx.doi.org/10.23919/epe20ecceeurope43536.2020.9215672
http://xplorestaging.ieee.org/ielx7/9205178/9215566/09215672.pdf?arnumber=9215672

المؤلفون: Alderighi, M, Citterio, M, Riva, M, Latorre, S, Costabeber, A, Paccagnella, A, Sichirollo, F, Spiazzi, G, Stellini, M, Tenti, P, Cova, P, Delmonte, N, Lanza, A, Bernardoni, M, Menozzi, R, Baccaro, S, Iannuzzo, F, Sanseverino, A, Busatto, G, Luca, V De, Velardi, F

المصدر: Journal of Instrumentation ; volume 7, issue 03, page C03012-C03012 ; ISSN 1748-0221

الاتاحة: http://dx.doi.org/10.1088/1748-0221/7/03/c03012

المؤلفون: Vasco, G, Baranello, G, Ricci, D, Salerni, A, Tamburrini, G, Amante, R, Dickmann, A, Di Rocco, C, Velardi, F, Mercuri, E

مصطلحات موضوعية: Original articles

وصف الملف: text/html

Relation: http://adc.bmj.com/cgi/content/short/93/11/932; http://dx.doi.org/10.1136/adc.2007.128421

الاتاحة: http://adc.bmj.com/cgi/content/short/93/11/932
https://doi.org/10.1136/adc.2007.128421

المؤلفون: Abbate C., Busatto G., Sanseverino A., Tedesco D., Velardi F.

المساهمون: C. Abbate, G. Busatto, A. Sanseverino, D. Tedesco, F. Velardi, Abbate, C., Busatto, G., Sanseverino, A., Tedesco, D., Velardi, F.

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000503907900108; volume:100-101; firstpage:113454; journal:MICROELECTRONICS RELIABILITY; http://hdl.handle.net/11580/78103; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85074714044

الاتاحة: http://hdl.handle.net/11580/78103
https://doi.org/10.1016/j.microrel.2019.113454

المؤلفون: Abbate C., Busatto G., Mattiazzo S., Sanseverino A., Silvestrin L., Tedesco D., Velardi F.

المساهمون: Abbate, C., Busatto, G., Mattiazzo, S., Sanseverino, A., Silvestrin, L., Tedesco, D., Velardi, F.

مصطلحات موضوعية: Power metal-oxide semiconductor field-effect transistor (MOSFET), Silicon carbide, Single event effect (SEE)

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000448227000173; volume:88-90; firstpage:941; lastpage:945; numberofpages:5; journal:MICROELECTRONICS RELIABILITY; http://hdl.handle.net/11577/3316591; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85054842678

الاتاحة: http://hdl.handle.net/11577/3316591
https://doi.org/10.1016/j.microrel.2018.07.100

المؤلفون: Abbate C., Busatto G., Sanseverino A., Tedesco D., Velardi F.

المساهمون: C. Abbate, G. Busatto, A. Sanseverino, D. Tedesco, F. Velardi, Abbate, C., Busatto, G., Sanseverino, A., Tedesco, D., Velardi, F.

Relation: volume:88-90; firstpage:677; lastpage:683; numberofpages:7; journal:MICROELECTRONICS RELIABILITY; http://hdl.handle.net/11580/83224; https://doi.org/10.1016/j.microrel.2018.07.071; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85054800225

الاتاحة: http://hdl.handle.net/11580/83224
https://doi.org/10.1016/j.microrel.2018.07.071

المؤلفون: Abbate, C., Busatto, G., Sanseverino, A., Tedesco, D., Velardi, F.

المصدر: Microelectronics Reliability ; volume 88-90, page 540-544 ; ISSN 0026-2714

الاتاحة: http://dx.doi.org/10.1016/j.microrel.2018.07.035
https://api.elsevier.com/content/article/PII:S0026271418305833?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0026271418305833?httpAccept=text/plain

المؤلفون: Abbate, C., Busatto, G., Iannuzzo, F., Sanseverino, A., Velardi, F., COVA, Paolo, DELMONTE, Nicola, GIULIANI, Francesco

المساهمون: Abbate, C., Busatto, G., Cova, Paolo, Delmonte, Nicola, Giuliani, Francesco, Iannuzzo, F., Sanseverino, A., Velardi, F.

Relation: ispartofbook:Proceedings IEEE Nuclear and Space Radiation Effects Conference (NSREC); IEEE Nuclear and Space Radiation Effects Conference (NSREC); numberofpages:5; http://hdl.handle.net/11381/2795782; http://ieee-npss.org/wp-content/uploads/2014/03/2014-NSREC.pdf

الاتاحة: http://hdl.handle.net/11381/2795782
http://ieee-npss.org/wp-content/uploads/2014/03/2014-NSREC.pdf