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1Academic Journal
المؤلفون: Teja Nibhanupudi, S. S., Roy, Anupam, Veksler, Dmitry, Coupin, Matthew, Matthews, Kevin C., Disiena, Matthew, Ansh, Singh, Jatin V., Gearba-Dolocan, Ioana R., Warner, Jamie, Kulkarni, Jaydeep P., Bersuker, Gennadi, Banerjee, Sanjay K.
المساهمون: National Science Foundation, Semiconductor Research Corporation, DST | Science and Engineering Research Board
المصدر: Nature Communications ; volume 15, issue 1 ; ISSN 2041-1723
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2Report
المؤلفون: Dawlaty, Jahan M., Shivaraman, Shriram, Strait, Jared, George, Paul, Chandrashekhar, Mvs, Rana, Farhan, Spencer, Michael G., Veksler, Dmitry, Chen, Yunqing
مصطلحات موضوعية: Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics
URL الوصول: http://arxiv.org/abs/0801.3302
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3Conference
المؤلفون: Armendariz, Emerson, Sepulveda, David A., Espalin, David, Rome, Jacob I., Hall, Andrew J., Veksler, Dmitry
المساهمون: Helvajian, Henry, Gu, Bo, Chen, Hongqiang
المصدر: Laser 3D Manufacturing IX
الاتاحة: http://dx.doi.org/10.1117/12.2615234
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4Conference
المؤلفون: Sin, Yongkun, Veksler, Dmitry, Edwards, Patrick, Brodie, Miles, Sitzman, Scott D., Lingley, Zachary
المساهمون: Morkoç, Hadis, Fujioka, Hiroshi, Schwarz, Ulrich T.
المصدر: Gallium Nitride Materials and Devices XVII
الاتاحة: http://dx.doi.org/10.1117/12.2606276
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5Academic Journal
المؤلفون: Shrestha, Pragya R., Nminibapiel, David M., Campbell, Jason P., Ryan, Jason T., Veksler, Dmitry, Baumgart, Helmut, Cheung, Kin P.
المصدر: IEEE Transactions on Electron Devices ; volume 65, issue 1, page 108-114 ; ISSN 0018-9383 1557-9646
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6Academic Journal
المؤلفون: Nminibapiel, David M., Veksler, Dmitry, Kim, J.-H., Shrestha, Pragya R., Campbell, Jason P., Ryan, Jason T., Baumgart, Helmut, Cheung, Kin P.
المصدر: Electrical & Computer Engineering Faculty Publications
مصطلحات موضوعية: Fluctuations, Instability, Program-verify, Relaxation, RRAM, Electrical and Computer Engineering, Electrical and Electronics
وصف الملف: application/pdf
Relation: https://digitalcommons.odu.edu/ece_fac_pubs/123; https://digitalcommons.odu.edu/context/ece_fac_pubs/article/1131/viewcontent/nihms899057_Baumgart.pdf
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7Conference
المؤلفون: Sin, Yongkun, Veksler, Dmitry, Hubbard, William, Sitzman, Scott D., Brodie, Miles, Lingley, Zachary, Ives, Neil
المساهمون: Morkoç, Hadis, Fujioka, Hiroshi, Schwarz, Ulrich T.
المصدر: Gallium Nitride Materials and Devices XVI
الاتاحة: http://dx.doi.org/10.1117/12.2576910
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8Conference
المؤلفون: Sin, Yongkun, Veksler, Dmitry, Hubbard, William, Brodie, Miles, Sitzman, Scott, Lingley, Zachary
المساهمون: Morkoç, Hadis, Fujioka, Hiroshi, Schwarz, Ulrich T.
المصدر: Gallium Nitride Materials and Devices XV
الاتاحة: http://dx.doi.org/10.1117/12.2543432
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9Academic Journal
المؤلفون: Sunday, Christopher E.1, Veksler, Dmitry1, Cheung, Kin C.1, Obeng, Yaw S.1
المصدر: Journal of Applied Physics. 11/7/2017, Vol. 122 Issue 17, p174504-1-174504-7. 7p. 1 Diagram, 1 Chart, 7 Graphs.
مصطلحات موضوعية: *ELECTRODIFFUSION, *DIFFUSION, *METROLOGY, *INTEGRATED circuits, *MICROWAVES
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10Conference
المؤلفون: Sin, Yongkun, Veksler, Dmitry, Bonsall, Jeremy, Sitzman, Scott, Brodie, Miles, Lingley, Zachary, Foran, Brendan
المساهمون: Morkoç, Hadis, Fujioka, Hiroshi, Schwarz, Ulrich T.
المصدر: Gallium Nitride Materials and Devices XIV
الاتاحة: http://dx.doi.org/10.1117/12.2507016
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11
المصدر: Small Satellite Conference
مصطلحات موضوعية: redefining, craft, applications, spacecraft, brane, phase
وصف الملف: application/pdf
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12Periodical
المؤلفون: Fujioka, Hiroshi, Morkoç, Hadis, Schwarz, Ulrich T., Sin, Yongkun, Veksler, Dmitry, Edwards, Patrick, Brodie, Miles, Sitzman, Scott, Lingley, Zachary
المصدر: Proceedings of SPIE; March 2022, Vol. 12001 Issue: 1 p120010E-120010E-10, 11881001p
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13Academic Journal
المؤلفون: Anwar, Sarkar R. M., Vandenberghe, William G., Bersuker, Gennadi, Veksler, Dmitry, Galatage, Rohit V., Jha, Sumit, Buie, Creighton, Barton, Adam T., Vogel, Eric M., Hinkle, Christopher L., VERZELLESI, Giovanni, MORASSI, LUCA
المساهمون: Anwar, Sarkar R. M., Vandenberghe, William G., Bersuker, Gennadi, Veksler, Dmitry, Verzellesi, Giovanni, Morassi, Luca, Galatage, Rohit V., Jha, Sumit, Buie, Creighton, Barton, Adam T., Vogel, Eric M., Hinkle, Christopher L.
مصطلحات موضوعية: C-V Simulation, CV Alternative Channel Extraction (ACE), Dit extraction, III-V semiconductor, quantum mechanical (QM) effect, thin oxide, Electronic, Optical and Magnetic Material, Electrical and Electronic Engineering
Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000408118700040; volume:64; issue:9; firstpage:3786; lastpage:3793; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; http://hdl.handle.net/11380/1146812; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85028754325
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14Academic Journal
المؤلفون: Anwar, Sarkar R. M., Vandenberghe, William G., Bersuker, Gennadi, Veksler, Dmitry, Galatage, Rohit V., Jha, Sumit, Buie, Creighton, Barton, Adam T., Vogel, Eric M., Hinkle, Christopher L., VERZELLESI, Giovanni, MORASSI, LUCA
المساهمون: Anwar, Sarkar R. M., Vandenberghe, William G., Bersuker, Gennadi, Veksler, Dmitry, Verzellesi, Giovanni, Morassi, Luca, Galatage, Rohit V., Jha, Sumit, Buie, Creighton, Barton, Adam T., Vogel, Eric M., Hinkle, Christopher L.
مصطلحات موضوعية: C-V simulation, CV ACE, Dit extraction, III-V semiconductor, quantum mechanical (QM) effect, thin oxide, Electronic, Optical and Magnetic Material, Electrical and Electronic Engineering
Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000408118700041; volume:64; issue:9; firstpage:3794; lastpage:3801; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; http://hdl.handle.net/11380/1146814; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85028743550
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15Conference
المؤلفون: Georgiou, Vasileia, Veksler, Dmitry, Campbell, Jason P., Shrestha, Pragya R., Ryan, Jason T., Ioannou, Dimitris E., Cheung, Kin P.
المساهمون: Jurchescu, Oana D., McCulloch, Iain
المصدر: Organic Field-Effect Transistors XVI
الاتاحة: http://dx.doi.org/10.1117/12.2274201
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16Academic Journal
المؤلفون: Georgiou, Vasileia, Veksler, Dmitry, Campbell, Jason P., Shrestha, Pragya R., Ryan, Jason T., Ioannou, Dimitris E., Cheung, Kin P.
المساهمون: National Institute of Standards and Technology
المصدر: Advanced Functional Materials ; volume 28, issue 10 ; ISSN 1616-301X 1616-3028
الاتاحة: http://dx.doi.org/10.1002/adfm.201705250
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fadfm.201705250
https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201705250
https://onlinelibrary.wiley.com/doi/full-xml/10.1002/adfm.201705250
https://onlinelibrary.wiley.com/doi/am-pdf/10.1002/adfm.201705250 -
17Academic Journal
المؤلفون: Veksler, Dmitry1 Dmitry.Veksler@sematech.org, Bersuker, Gennadi1 gennadi.bersuker@sematech.org
المصدر: Journal of Applied Physics. 2014, Vol. 115 Issue 3, p1-11. 11p. 2 Diagrams, 1 Chart, 10 Graphs.
مصطلحات موضوعية: *DIELECTRICS research, *ENERGY dissipation, *PROCESS optimization, *CHARGE transfer, *LOW voltage systems
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18Academic Journal
المؤلفون: Rumyantsev, Sergey L., Dmitriev, Alexander P., Levinshtein, Michael E., Veksler, Dmitry, Shur, Michael S., Palmour, John W., Das, Mrinal K., Hull, Brett A.
المصدر: Journal of Applied Physics; 9/15/2006, Vol. 100 Issue 6, p064505, 6p, 7 Graphs
مصطلحات موضوعية: BOUNDARY layer noise, BIPOLAR transistors, BIPOLAR integrated circuits, THYRISTORS, SILICON-controlled rectifiers, SPECTRAL energy distribution, FLUCTUATIONS (Physics)
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19Academic Journal
المؤلفون: SERENI, GABRIELE, VANDELLI, LUCA, LARCHER, Luca, Veksler, Dmitry
المساهمون: Sereni, Gabriele, Vandelli, Luca, Veksler, Dmitry, Larcher, Luca
مصطلحات موضوعية: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000350332000003; volume:62; issue:3; firstpage:705; lastpage:712; numberofpages:8; journal:IEEE TRANSACTIONS ON ELECTRON DEVICES; http://hdl.handle.net/11380/1131123; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-84923917927; http://ieeexplore.ieee.org/document/7006738/
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20Academic Journal
المساهمون: Veksler, Dmitry, Bersuker, Gennadi, Madan, H., Morassi, Luca, Verzellesi, Giovanni
مصطلحات موضوعية: Electric field effect, Extraction, MOS device, Surface state, Device characteristic, Effective oxide thickne, Electric variable measurement, Field-effect device, III-V MOS, Interface state density, Interface trap density, Measurement procedures
وصف الملف: STAMPA
Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000355235400019; volume:30; issue:6; firstpage:1; lastpage:8; numberofpages:8; journal:SEMICONDUCTOR SCIENCE AND TECHNOLOGY; info:eu-repo/grantAgreement/EC/FP7/619326; http://hdl.handle.net/11380/1082020; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-84930226611; http://iopscience.iop.org/article/10.1088/0268-1242/30/6/065013/meta