المؤلفون: Renz, Arne Benjamin, Dai, Tianxiang, Antoniou, Marina, Cao, Qinze, Melnyk, Kyrylo, Tian, Xinkai, Stokeley, Katarzyna, Newton, Andrew, Shah, Vishal, Vavasour, Oliver J., Gammon, P. M.

Relation: Renz, Arne Benjamin, Dai, Tianxiang, Antoniou, Marina, Cao, Qinze, Melnyk, Kyrylo, Tian, Xinkai, Stokeley, Katarzyna, Newton, Andrew, Shah, Vishal, Vavasour, Oliver J. and Gammon, P. M. (2023) The optimisation, fabrication and comparison of 10 kV-rated 4H-SiC IGBTs and MOSFETs. In: 2023 IEEE Energy Conversion Congress and Exposition (ECCE), Nashville, TN, USA, 29 Oct - 02 Nov 2023. Published in: 2023 IEEE Energy Conversion Congress and Exposition (ECCE) doi:10.1109/ecce53617.2023.10362455

الاتاحة: https://wrap.warwick.ac.uk/182368/
https://doi.org/10.1109/ecce53617.2023.10362455

المؤلفون: Vavasour, Oliver J, Jefferies, Richard, Walker, Marc, Roberts, Joseph W, Meakin, Naomi R, Gammon, Peter M, Chalker, Paul R, Ashley, Tim

المساهمون: Engineering and Physical Sciences Research Council

المصدر: Semiconductor Science and Technology ; volume 34, issue 3, page 035032 ; ISSN 0268-1242 1361-6641

الاتاحة: http://dx.doi.org/10.1088/1361-6641/ab0331
https://iopscience.iop.org/article/10.1088/1361-6641/ab0331
http://iopscience.iop.org/article/10.1088/1361-6641/ab0331/pdf
https://iopscience.iop.org/article/10.1088/1361-6641/ab0331/pdf
http://iopscience.iop.org/article/10.1088/1361-6641/ab0331

المؤلفون: Renz, A. B., Vavasour, Oliver J., Gammon, Peter M., Li, Fan, Dai, Tianxiang, Baker, G. W. C., Grant, Nicholas E., Murphy, John D., Mawby, Philip A., Shah, Vishal

مصطلحات موضوعية: TA

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::d185bdc642d0e314379380cc57ea2aa5
http://wrap.warwick.ac.uk/168129/1/WRAP-improved-reliability-performance-post-deposition-annealed-ALD-SiO2-2022.pdf

المؤلفون: Renz, A. B., Vavasour, Oliver J., Rommel, Mathias, Baker, G. W. C., Gammon, Peter M., Dai, Tianxiang, Li, Fan, Antoniou, Marina, Mawby, Philip A., Shah, Vishal

مصطلحات موضوعية: TA Engineering (General). Civil engineering (General), TJ Mechanical engineering and machinery

وصف الملف: application/pdf

Relation: https://wrap.warwick.ac.uk/166198/1/WRAP-study-high-resistivity-semi-insulating-4H-SiC-epilayers-formed-via-the-implantation-Germanium-Vanadium-2022.pdf; Renz, A. B., Vavasour, Oliver J., Rommel, Mathias, Baker, G. W. C., Gammon, Peter M., Dai, Tianxiang, Li, Fan, Antoniou, Marina, Mawby, Philip A. and Shah, Vishal (2022) A study of high resistivity semi-insulating 4H-SiC epilayers formed via the implantation of Germanium and Vanadium. Materials Science Forum, 1062 . pp. 523-527. doi:10.4028/p-92w3k6 ISSN 1662-9752.

الاتاحة: https://wrap.warwick.ac.uk/166198/
https://wrap.warwick.ac.uk/166198/1/WRAP-study-high-resistivity-semi-insulating-4H-SiC-epilayers-formed-via-the-implantation-Germanium-Vanadium-2022.pdf
https://doi.org/10.4028/p-92w3k6

المؤلفون: Renz, A. B., Vavasour, Oliver J., Pérez-Tomás, Amador, Cao, Qin Ze, Shah, Vishal, Bonyadi, Yeganeh, Pathirana, Vasantha, Trajkovic, Tanya, Baker, G. W. C., Mawby, Philip A., Gammon, Peter M.

مصطلحات موضوعية: QC Physics, TK Electrical engineering. Electronics Nuclear engineering

وصف الملف: application/pdf

Relation: https://wrap.warwick.ac.uk/166204/1/WRAP-engineering-Schottky-interface-3.3-kV-SiC-JBS-diodes-using-P2O5-surface-passivation-treatment-2022.pdf; Renz, A. B., Vavasour, Oliver J., Pérez-Tomás, Amador, Cao, Qin Ze, Shah, Vishal, Bonyadi, Yeganeh, Pathirana, Vasantha, Trajkovic, Tanya, Baker, G. W. C., Mawby, Philip A. and Gammon, Peter M. (2022) Engineering the Schottky interface of 3.3 kV SiC JBS diodes using a P2O5 surface passivation treatment. Materials Science Forum, 1062 . pp. 190-194. doi:10.4028/p-97jy4p ISSN 1662-9752.

الاتاحة: https://wrap.warwick.ac.uk/166204/
https://wrap.warwick.ac.uk/166204/1/WRAP-engineering-Schottky-interface-3.3-kV-SiC-JBS-diodes-using-P2O5-surface-passivation-treatment-2022.pdf
https://doi.org/10.4028/p-97jy4p

المؤلفون: Renz, Arne Benjamin, Vavasour, Oliver J., Gammon, Peter M., Li, Fan, Dai, Tianxiang, Baker, Guy, Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Shah, Vishal, Gott, James A.

Relation: Renz, Arne Benjamin, Vavasour, Oliver J., Gammon, Peter M., Li, Fan, Dai, Tianxiang, Baker, Guy, Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Shah, Vishal and Gott, James A. (2022) (Invited, Digital Presentation) Improved reliability of 4H-SiC metal-oxide-semiconductor devices utilising atomic layer deposited layers with enhanced interface quality. ECS Transactions, 108 (2). pp. 43-49. doi:10.1149/10802.0043ecst ISSN 1938-5862.

الاتاحة: https://wrap.warwick.ac.uk/167455/
https://doi.org/10.1149/10802.0043ecst

المؤلفون: Renz, A. B., Shah, Vishal, Vavasour, Oliver J., Baker, Guy, Bonyadi, Yegi, Sharma, Yogesh K., Pathirana, Vasantha, Trajkovic, Tanya, Mawby, Philip. A., Antoniou, Marina, Gammon, Peter M.

مصطلحات موضوعية: QC Physics, TK Electrical engineering. Electronics Nuclear engineering, TP Chemical technology

وصف الملف: application/pdf

Relation: https://wrap.warwick.ac.uk/161054/1/WRAP-The-optimization-3.3-kV-4H-SiC-JBS-diodes-2022.pdf; Renz, A. B., Shah, Vishal, Vavasour, Oliver J., Baker, Guy, Bonyadi, Yegi, Sharma, Yogesh K., Pathirana, Vasantha, Trajkovic, Tanya, Mawby, Philip. A., Antoniou, Marina and Gammon, Peter M. (2022) The optimization of 3.3 kV 4H-SiC JBS diodes. IEEE Transactions on Electron Devices, 69 (1). pp. 298-303. doi:10.1109/ted.2021.3129705 ISSN 1557-9646.

الاتاحة: https://wrap.warwick.ac.uk/161054/
https://wrap.warwick.ac.uk/161054/1/WRAP-The-optimization-3.3-kV-4H-SiC-JBS-diodes-2022.pdf
https://doi.org/10.1109/ted.2021.3129705

المؤلفون: Dai, Tianxiang, Zhang, L., Vavasour, Oliver J., Renz, A. B., Shah, V. A., Antoniou, M., Mawby, P. A. (Philip A.), Gammon, P. M.

مصطلحات موضوعية: TK Electrical engineering. Electronics Nuclear engineering

وصف الملف: application/pdf

Relation: https://wrap.warwick.ac.uk/148197/1/WRAP-compact%20trench-assisted-space-modulated-JTE-design-high-voltage-4H-SiC-devices-Dai-2021.pdf; Dai, Tianxiang, Zhang, L., Vavasour, Oliver J., Renz, A. B., Shah, V. A., Antoniou, M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2021) A compact trench-assisted space-modulated JTE design for high-voltage 4H-SiC devices. IEEE Transactions on Electron Devices, 68 (3). pp. 1162-1167. doi:10.1109/TED.2020.3047348 ISSN 0018-9383.

الاتاحة: https://wrap.warwick.ac.uk/148197/
https://wrap.warwick.ac.uk/148197/1/WRAP-compact%20trench-assisted-space-modulated-JTE-design-high-voltage-4H-SiC-devices-Dai-2021.pdf
https://doi.org/10.1109/TED.2020.3047348

المؤلفون: Renz, A. B., Vavasour, Oliver J., Gammon, P. M., Li, Fan, Dai, Tianxiang, Antoniou, M., Baker, G. W. C., Bashar, E., Grant, N. E, Murphy, J. D., Mawby, P. A., Shah, V. A.

مصطلحات موضوعية: QC Physics, T Technology (General), TK Electrical engineering. Electronics Nuclear engineering, TP Chemical technology

وصف الملف: application/pdf

Relation: https://wrap.warwick.ac.uk/146763/1/WRAP-improvement-atomic-layer-deposited-SiO2-4H-SiC-interfaces-high-temperature-forming-gas-anneal-Murphy-2021.pdf; Renz, A. B., Vavasour, Oliver J., Gammon, P. M., Li, Fan, Dai, Tianxiang, Antoniou, M., Baker, G. W. C., Bashar, E., Grant, N. E, Murphy, J. D., Mawby, P. A. and Shah, V. A. (2021) The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal. Materials Science in Semiconductor Processing, 122 . 105527. doi:10.1016/j.mssp.2020.105527 ISSN 1369-8001.

الاتاحة: https://wrap.warwick.ac.uk/146763/
https://wrap.warwick.ac.uk/146763/1/WRAP-improvement-atomic-layer-deposited-SiO2-4H-SiC-interfaces-high-temperature-forming-gas-anneal-Murphy-2021.pdf
https://doi.org/10.1016/j.mssp.2020.105527

المؤلفون: Renz, A. B., Li, F., Vavasour, Oliver J., Gammon, P. M., Dai, T., Baker, G. W. C., Via, F. La, Zielinski, M. (Marcin), Zhang, L., Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Jennings, M. R. (Michael R.), Shah, V. A.

مصطلحات موضوعية: TK Electrical engineering. Electronics Nuclear engineering, TP Chemical technology, TS Manufactures

وصف الملف: application/pdf

Relation: https://wrap.warwick.ac.uk/150801/7/WRAP-Initial-investigations-MOS-interface-3C-SiC-layers-device-applications-2021.pdf; Renz, A. B., Li, F., Vavasour, Oliver J., Gammon, P. M., Dai, T., Baker, G. W. C., Via, F. La, Zielinski, M. (Marcin), Zhang, L., Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Jennings, M. R. (Michael R.) and Shah, V. A. (2021) Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications. Semiconductor Science and Technology, 36 (5). 055006. doi:10.1088/1361-6641/abefa1 ISSN 1361-6641.

الاتاحة: https://wrap.warwick.ac.uk/150801/
https://wrap.warwick.ac.uk/150801/7/WRAP-Initial-investigations-MOS-interface-3C-SiC-layers-device-applications-2021.pdf
https://doi.org/10.1088/1361-6641/abefa1

المؤلفون: Renz, A. B., Shah, V. A., Vavasour, Oliver J., Bonyadi, Yeganeh, Li, Fan, Dai, Tianxiang, Baker, G. W. C., Hindmarsh, Steven A., Han, Yan, Walker, Marc, Sharma, Y., Liu, Y., Raghothamachar, B., Dudley, M., Mawby, P. A. (Philip A.), Gammon, P. M.

مصطلحات موضوعية: QC Physics, TK Electrical engineering. Electronics Nuclear engineering

وصف الملف: application/pdf

Relation: http://wrap.warwick.ac.uk/133146/1/WRAP-improvement-Mo4H-SiC-Schottky-diodes-via-P2O5-surface-passivation-treatment-Renz-2020.pdf; Renz, A. B., Shah, V. A., Vavasour, Oliver J., Bonyadi, Yeganeh, Li, Fan, Dai, Tianxiang, Baker, G. W. C., Hindmarsh, Steven A., Han, Yan, Walker, Marc, Sharma, Y., Liu, Y., Raghothamachar, B., Dudley, M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2020) The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment. Journal of Applied Physics, 127 (2). 025704. doi:10.1063/1.5133739

الاتاحة: http://wrap.warwick.ac.uk/133146/
http://wrap.warwick.ac.uk/133146/1/WRAP-improvement-Mo4H-SiC-Schottky-diodes-via-P2O5-surface-passivation-treatment-Renz-2020.pdf
https://doi.org/10.1063/1.5133739

المؤلفون: Vavasour, Oliver J., Jefferies, Richard, Walker, Marc, Roberts, Joseph W., Meakin, Naomi R., Gammon, P. M., Chalker, Paul R, Ashley, Tim

مصطلحات موضوعية: QC Physics, TK Electrical engineering. Electronics Nuclear engineering

وصف الملف: text/plain; application/zip

Relation: http://wrap.warwick.ac.uk/114894/2/readme.txt; http://wrap.warwick.ac.uk/114894/1/114894%20Data%20for%20WRAP.zip; Vavasour, Oliver J., Jefferies, Richard, Walker, Marc, Roberts, Joseph W., Meakin, Naomi R., Gammon, P. M., Chalker, Paul R and Ashley, Tim (2019) Data for Effect of HCl cleaning on InSb–Al2O3 MOS capacitors. [Dataset]

الاتاحة: http://wrap.warwick.ac.uk/114894
http://wrap.warwick.ac.uk/114894/
http://wrap.warwick.ac.uk/114894/2/readme.txt
http://wrap.warwick.ac.uk/114894/1/114894%20Data%20for%20WRAP.zip

المؤلفون: Vavasour, Oliver J, Jefferies, Richard, Walker, Marc, Roberts, Joseph W, Meakin, Naomi R, Gammon, Peter M, Chalker, Paul R, Ashley, Tim

مصطلحات موضوعية: geo, envir

Relation: http://livrepository.liverpool.ac.uk/3034855/1/Vavasour_2019_Semicond._Sci._Technol._34_035032.pdf; http://livrepository.liverpool.ac.uk/3034855/

الاتاحة: http://livrepository.liverpool.ac.uk/3034855/1/Vavasour_2019_Semicond._Sci._Technol._34_035032.pdf
http://livrepository.liverpool.ac.uk/3034855/

المؤلفون: Renz, A. Benjamin, Vavasour, Oliver J., Rommel, Mathias, Baker, G.W.C., Gammon, Peter M., Dai, Tian Xiang, Li, Fan, Antoniou, Marina, Mawby, Phillip A., Shah, Vish Al

المصدر: Materials Science Forum; May 2022, Vol. 1062 Issue: 1 p523-527, 5p

المؤلفون: Renz, A. Benjamin, Vavasour, Oliver J., Pérez-Tomás, Amador, Cao, Qin Ze, Shah, Vish Al, Bonyadi, Yeganeh, Pathirana, Vasantha, Trajkovic, Tanya, Baker, G.W.C., Mawby, Phillip A., Gammon, Peter M.

المصدر: Materials Science Forum; May 2022, Vol. 1062 Issue: 1 p190-194, 5p

المؤلفون: Gammon, Peter M, Shah, Vishal A, McMahon, Richard A, Jennings, Michael R, Padfield, Faye, Mawby, Philip A, Vavasour, Oliver J

مصطلحات موضوعية: XX

Relation: http://cds.cern.ch/record/2729600; oai:cds.cern.ch:2729600

الاتاحة: http://cds.cern.ch/record/2729600

المؤلفون: Renz, Arne Benjamin Benjamin, Vavasour, Oliver J, Gammon, Peter Michael, Li, Fan, Dai, Tianxiang, Baker, Guy W C, Grant, Nicholas E, Murphy, John D, Mawby, P. A., Shah, Vishal Ajit, Gott, James

المصدر: ECS Transactions; May 2022, Vol. 108 Issue: 2